FR2390829A1 - Laser a jonction a double heterostructure - Google Patents

Laser a jonction a double heterostructure

Info

Publication number
FR2390829A1
FR2390829A1 FR7813411A FR7813411A FR2390829A1 FR 2390829 A1 FR2390829 A1 FR 2390829A1 FR 7813411 A FR7813411 A FR 7813411A FR 7813411 A FR7813411 A FR 7813411A FR 2390829 A1 FR2390829 A1 FR 2390829A1
Authority
FR
France
Prior art keywords
double heterostructure
laser
junction laser
active region
heterostructure junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7813411A
Other languages
English (en)
Other versions
FR2390829B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2390829A1 publication Critical patent/FR2390829A1/fr
Application granted granted Critical
Publication of FR2390829B1 publication Critical patent/FR2390829B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne les lasers à semi-conducteurs. Le laser de l'invention comporte en particulier deux paires de jonctions de blocage p-n, 21.1, 21.2 et 13.1, 13.2. Ces jonctions sont polarisées en sens inverse, par la tension de polarisation de sens direct qui est appliquée à la région active 16.1 pour produire l'émission laser, et elles limitent circulation du courant 19 à un canal qui traverse la région active 16.1 et une structure mesa 10.1 formées sur le substrat 10. Application aux télécommunications optiques.
FR7813411A 1977-05-06 1978-05-05 Laser a jonction a double heterostructure Granted FR2390829A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/794,466 US4169997A (en) 1977-05-06 1977-05-06 Lateral current confinement in junction lasers

Publications (2)

Publication Number Publication Date
FR2390829A1 true FR2390829A1 (fr) 1978-12-08
FR2390829B1 FR2390829B1 (fr) 1982-06-04

Family

ID=25162697

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7813411A Granted FR2390829A1 (fr) 1977-05-06 1978-05-05 Laser a jonction a double heterostructure

Country Status (7)

Country Link
US (1) US4169997A (fr)
JP (2) JPS53138689A (fr)
CA (1) CA1093197A (fr)
DE (1) DE2819843A1 (fr)
FR (1) FR2390829A1 (fr)
GB (1) GB1596820A (fr)
NL (1) NL7804878A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020254B1 (fr) * 1979-06-01 1983-03-02 Thomson-Csf Diode laser à émission localisée

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE33671E (en) * 1978-04-24 1991-08-20 At&T Bell Laboratories Method of making high mobility multilayered heterojunction device employing modulated doping
DE2856507A1 (de) * 1978-12-28 1980-07-17 Amann Markus Christian Dipl In Halbleiter-laserdiode
DE3065856D1 (en) * 1979-02-13 1984-01-19 Fujitsu Ltd A semiconductor light emitting device
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
US4323859A (en) * 1980-02-04 1982-04-06 Northern Telecom Limited Chanelled substrate double heterostructure lasers
US4329189A (en) * 1980-02-04 1982-05-11 Northern Telecom Limited Channelled substrate double heterostructure lasers
JPS5735391A (en) * 1980-06-26 1982-02-25 Nec Corp Manufacture of semiconductor laser
DE3105786A1 (de) * 1981-02-17 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Herstellung von lumineszenz- oder laserdioden mit intern begrenzter leuchtflaeche
JPS5833885A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd レ−ザ−ダイオ−ド
US4445218A (en) * 1981-09-28 1984-04-24 Bell Telephone Laboratories, Incorporated Semiconductor laser with conductive current mask
JPS5864085A (ja) * 1981-10-13 1983-04-16 Nec Corp 半導体レ−ザおよびその製造方法
JPS61500754A (ja) * 1983-12-14 1986-04-17 ハネウエル・インコ−ポレ−テツド 広帯域で高輝度の表面放射ｌｅｄおよびそれの製造方法
US4675058A (en) * 1983-12-14 1987-06-23 Honeywell Inc. Method of manufacturing a high-bandwidth, high radiance, surface emitting LED
DE3435148A1 (de) * 1984-09-25 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Laserdiode mit vergrabener aktiver schicht und mit seitlicher strombegrezung durch selbstjustierten pn-uebergang sowie verfahren zur herstellung einer solchen laserdiode
JPS61135184A (ja) * 1984-12-05 1986-06-23 Sharp Corp 半導体レ−ザ装置
DE3604293A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdiode
US4751707A (en) * 1986-07-03 1988-06-14 Mcdonnell Douglas Corporation Laser diode array exhibiting transverse lasing
JPS63140591A (ja) * 1986-12-02 1988-06-13 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
JP2681352B2 (ja) * 1987-07-31 1997-11-26 信越半導体 株式会社 発光半導体素子
JPS63195769U (fr) * 1988-06-15 1988-12-16
JPH0590633A (ja) * 1991-09-25 1993-04-09 Hitachi Cable Ltd 発光ダイオード及びその製造方法
US5383214A (en) * 1992-07-16 1995-01-17 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and a method for producing the same
DE19837221A1 (de) * 1998-08-17 2000-03-02 Siemens Ag Kantenemitter und Verfahren zur Herstellung desselben
DE10008584A1 (de) * 2000-02-24 2001-09-13 Osram Opto Semiconductors Gmbh Halbleiterbauelement für die Emission elektromagnetischer Strahlung und Verfahren zu dessen Herstellung
US6526082B1 (en) * 2000-06-02 2003-02-25 Lumileds Lighting U.S., Llc P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction
US6822991B2 (en) 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
US6847057B1 (en) 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
US12095232B2 (en) * 2021-10-06 2024-09-17 Ii-Vi Delaware, Inc. Control of current spread in semiconductor laser devices
JP7103552B1 (ja) * 2022-01-27 2022-07-20 三菱電機株式会社 光半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2147322A1 (fr) * 1971-07-29 1973-03-09 Licentia Gmbh
FR2316747A1 (fr) * 1975-06-20 1977-01-28 Matsushita Electric Ind Co Ltd Dispositif photo-emetteur a etat solide et son procede de fabrication
US4048627A (en) * 1975-11-17 1977-09-13 Rca Corporation Electroluminescent semiconductor device having a restricted current flow

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248066B2 (fr) * 1974-03-04 1977-12-07
JPS5248065B2 (fr) * 1973-10-27 1977-12-07
US3984262A (en) * 1974-12-09 1976-10-05 Xerox Corporation Method of making a substrate striped planar laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2147322A1 (fr) * 1971-07-29 1973-03-09 Licentia Gmbh
FR2316747A1 (fr) * 1975-06-20 1977-01-28 Matsushita Electric Ind Co Ltd Dispositif photo-emetteur a etat solide et son procede de fabrication
US4048627A (en) * 1975-11-17 1977-09-13 Rca Corporation Electroluminescent semiconductor device having a restricted current flow

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020254B1 (fr) * 1979-06-01 1983-03-02 Thomson-Csf Diode laser à émission localisée

Also Published As

Publication number Publication date
JPS5963781A (ja) 1984-04-11
CA1093197A (fr) 1981-01-06
GB1596820A (en) 1981-09-03
JPS53138689A (en) 1978-12-04
DE2819843A1 (de) 1978-11-09
US4169997A (en) 1979-10-02
FR2390829B1 (fr) 1982-06-04
NL7804878A (nl) 1978-11-08

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