NL7804878A - Laterale stroombegrenzing in lichtemitterende junctie- diodes in het bijzonder lasers. - Google Patents
Laterale stroombegrenzing in lichtemitterende junctie- diodes in het bijzonder lasers.Info
- Publication number
- NL7804878A NL7804878A NL7804878A NL7804878A NL7804878A NL 7804878 A NL7804878 A NL 7804878A NL 7804878 A NL7804878 A NL 7804878A NL 7804878 A NL7804878 A NL 7804878A NL 7804878 A NL7804878 A NL 7804878A
- Authority
- NL
- Netherlands
- Prior art keywords
- light
- current limitation
- junction diodes
- lateral current
- emitting junction
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/794,466 US4169997A (en) | 1977-05-06 | 1977-05-06 | Lateral current confinement in junction lasers |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7804878A true NL7804878A (nl) | 1978-11-08 |
Family
ID=25162697
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7804878A NL7804878A (nl) | 1977-05-06 | 1978-05-05 | Laterale stroombegrenzing in lichtemitterende junctie- diodes in het bijzonder lasers. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4169997A (fr) |
JP (2) | JPS53138689A (fr) |
CA (1) | CA1093197A (fr) |
DE (1) | DE2819843A1 (fr) |
FR (1) | FR2390829A1 (fr) |
GB (1) | GB1596820A (fr) |
NL (1) | NL7804878A (fr) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE33671E (en) * | 1978-04-24 | 1991-08-20 | At&T Bell Laboratories | Method of making high mobility multilayered heterojunction device employing modulated doping |
DE2856507A1 (de) * | 1978-12-28 | 1980-07-17 | Amann Markus Christian Dipl In | Halbleiter-laserdiode |
DE3065856D1 (en) * | 1979-02-13 | 1984-01-19 | Fujitsu Ltd | A semiconductor light emitting device |
FR2458158A1 (fr) * | 1979-06-01 | 1980-12-26 | Thomson Csf | Diode laser a emission localisee et emetteur opto-electronique utilisant une telle diode |
US4317085A (en) * | 1979-09-12 | 1982-02-23 | Xerox Corporation | Channeled mesa laser |
US4323859A (en) * | 1980-02-04 | 1982-04-06 | Northern Telecom Limited | Chanelled substrate double heterostructure lasers |
US4329189A (en) * | 1980-02-04 | 1982-05-11 | Northern Telecom Limited | Channelled substrate double heterostructure lasers |
JPS5735391A (en) * | 1980-06-26 | 1982-02-25 | Nec Corp | Manufacture of semiconductor laser |
DE3105786A1 (de) * | 1981-02-17 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Herstellung von lumineszenz- oder laserdioden mit intern begrenzter leuchtflaeche |
JPS5833885A (ja) * | 1981-08-24 | 1983-02-28 | Hitachi Ltd | レ−ザ−ダイオ−ド |
US4445218A (en) * | 1981-09-28 | 1984-04-24 | Bell Telephone Laboratories, Incorporated | Semiconductor laser with conductive current mask |
JPS5864085A (ja) * | 1981-10-13 | 1983-04-16 | Nec Corp | 半導体レ−ザおよびその製造方法 |
JPS61500754A (ja) * | 1983-12-14 | 1986-04-17 | ハネウエル・インコ−ポレ−テツド | 広帯域で高輝度の表面放射ledおよびそれの製造方法 |
US4675058A (en) * | 1983-12-14 | 1987-06-23 | Honeywell Inc. | Method of manufacturing a high-bandwidth, high radiance, surface emitting LED |
DE3435148A1 (de) * | 1984-09-25 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Laserdiode mit vergrabener aktiver schicht und mit seitlicher strombegrezung durch selbstjustierten pn-uebergang sowie verfahren zur herstellung einer solchen laserdiode |
JPS61135184A (ja) * | 1984-12-05 | 1986-06-23 | Sharp Corp | 半導体レ−ザ装置 |
DE3604293A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdiode |
US4751707A (en) * | 1986-07-03 | 1988-06-14 | Mcdonnell Douglas Corporation | Laser diode array exhibiting transverse lasing |
JPS63140591A (ja) * | 1986-12-02 | 1988-06-13 | Mitsubishi Electric Corp | 半導体レ−ザ装置の製造方法 |
JP2681352B2 (ja) * | 1987-07-31 | 1997-11-26 | 信越半導体 株式会社 | 発光半導体素子 |
JPS63195769U (fr) * | 1988-06-15 | 1988-12-16 | ||
JPH0590633A (ja) * | 1991-09-25 | 1993-04-09 | Hitachi Cable Ltd | 発光ダイオード及びその製造方法 |
US5383214A (en) * | 1992-07-16 | 1995-01-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and a method for producing the same |
DE19837221A1 (de) * | 1998-08-17 | 2000-03-02 | Siemens Ag | Kantenemitter und Verfahren zur Herstellung desselben |
DE10008584A1 (de) * | 2000-02-24 | 2001-09-13 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement für die Emission elektromagnetischer Strahlung und Verfahren zu dessen Herstellung |
US6526082B1 (en) * | 2000-06-02 | 2003-02-25 | Lumileds Lighting U.S., Llc | P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction |
US6822991B2 (en) | 2002-09-30 | 2004-11-23 | Lumileds Lighting U.S., Llc | Light emitting devices including tunnel junctions |
US6847057B1 (en) | 2003-08-01 | 2005-01-25 | Lumileds Lighting U.S., Llc | Semiconductor light emitting devices |
US12095232B2 (en) * | 2021-10-06 | 2024-09-17 | Ii-Vi Delaware, Inc. | Control of current spread in semiconductor laser devices |
JP7103552B1 (ja) * | 2022-01-27 | 2022-07-20 | 三菱電機株式会社 | 光半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT963303B (it) * | 1971-07-29 | 1974-01-10 | Licentia Gmbh | Laser a semiconduttore |
JPS5248066B2 (fr) * | 1974-03-04 | 1977-12-07 | ||
JPS5248065B2 (fr) * | 1973-10-27 | 1977-12-07 | ||
US3984262A (en) * | 1974-12-09 | 1976-10-05 | Xerox Corporation | Method of making a substrate striped planar laser |
JPS5811111B2 (ja) * | 1975-06-20 | 1983-03-01 | 松下電器産業株式会社 | 半導体レ−ザ装置の製造方法 |
US4048627A (en) * | 1975-11-17 | 1977-09-13 | Rca Corporation | Electroluminescent semiconductor device having a restricted current flow |
-
1977
- 1977-05-06 US US05/794,466 patent/US4169997A/en not_active Expired - Lifetime
-
1978
- 1978-04-24 GB GB16031/78A patent/GB1596820A/en not_active Expired
- 1978-04-26 CA CA301,990A patent/CA1093197A/fr not_active Expired
- 1978-05-05 DE DE19782819843 patent/DE2819843A1/de not_active Ceased
- 1978-05-05 FR FR7813411A patent/FR2390829A1/fr active Granted
- 1978-05-05 NL NL7804878A patent/NL7804878A/xx not_active Application Discontinuation
- 1978-05-06 JP JP5400678A patent/JPS53138689A/ja active Pending
-
1983
- 1983-07-07 JP JP58122501A patent/JPS5963781A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5963781A (ja) | 1984-04-11 |
CA1093197A (fr) | 1981-01-06 |
GB1596820A (en) | 1981-09-03 |
JPS53138689A (en) | 1978-12-04 |
DE2819843A1 (de) | 1978-11-09 |
US4169997A (en) | 1979-10-02 |
FR2390829A1 (fr) | 1978-12-08 |
FR2390829B1 (fr) | 1982-06-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |