FR2374742A1 - Transistor multicouche pour tensions elevees et son procede de fabrication - Google Patents
Transistor multicouche pour tensions elevees et son procede de fabricationInfo
- Publication number
- FR2374742A1 FR2374742A1 FR7638303A FR7638303A FR2374742A1 FR 2374742 A1 FR2374742 A1 FR 2374742A1 FR 7638303 A FR7638303 A FR 7638303A FR 7638303 A FR7638303 A FR 7638303A FR 2374742 A1 FR2374742 A1 FR 2374742A1
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- high voltages
- layer transistor
- emitter
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
Abstract
Transistor à structure multicouche et émetteur composé de deux régions de dopages différents. Une région superficielle fortement dopée de l'émetteur 26 localisée à distance d'une zone de contact de base 28 encadre une région 25 fortement dopée, du type de conductivité de la base 23. Application aux transistors haute tension, avec amélioration du comportement au second claquage.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7638303A FR2374742A1 (fr) | 1976-12-20 | 1976-12-20 | Transistor multicouche pour tensions elevees et son procede de fabrication |
DE19772754412 DE2754412A1 (de) | 1976-12-20 | 1977-12-07 | Leistungstransistor und verfahren zu dessen herstellung |
CA293,149A CA1091816A (fr) | 1976-12-20 | 1977-12-15 | Transistor de puissance et mode de fabrication |
GB52439/77A GB1547125A (en) | 1976-12-20 | 1977-12-16 | Transistor and their manufacture |
NL7713947A NL7713947A (nl) | 1976-12-20 | 1977-12-16 | Vermogenstransistor en werkwijze voor het vervaardigen ervan. |
JP15122977A JPS5377473A (en) | 1976-12-20 | 1977-12-17 | Transistor and method of producing same |
US06/134,395 US4315271A (en) | 1976-12-20 | 1980-03-27 | Power transistor and method of manufacturing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7638303A FR2374742A1 (fr) | 1976-12-20 | 1976-12-20 | Transistor multicouche pour tensions elevees et son procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2374742A1 true FR2374742A1 (fr) | 1978-07-13 |
FR2374742B1 FR2374742B1 (fr) | 1980-12-05 |
Family
ID=9181255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7638303A Granted FR2374742A1 (fr) | 1976-12-20 | 1976-12-20 | Transistor multicouche pour tensions elevees et son procede de fabrication |
Country Status (7)
Country | Link |
---|---|
US (1) | US4315271A (fr) |
JP (1) | JPS5377473A (fr) |
CA (1) | CA1091816A (fr) |
DE (1) | DE2754412A1 (fr) |
FR (1) | FR2374742A1 (fr) |
GB (1) | GB1547125A (fr) |
NL (1) | NL7713947A (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0071161A2 (fr) * | 1981-07-28 | 1983-02-09 | Fujitsu Limited | Transistor à structure émetteur en forme de peigne |
EP0096625A1 (fr) * | 1982-06-08 | 1983-12-21 | Thomson-Csf | Structure de doigt d'émetteur dans un transistor de commutation et procédé de fabrication |
FR2570879A1 (fr) * | 1984-09-21 | 1986-03-28 | Thomson Csf | Transistor bipolaire de puissance utilisable en commutation |
EP0609351A1 (fr) * | 1991-10-23 | 1994-08-10 | MicroUnity Systems Engineering, Inc. | Transistor bipolaire presentant des caracteristiques ameliorees de gain en courant et de claquage |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5598854A (en) * | 1979-01-24 | 1980-07-28 | Mitsubishi Electric Corp | Semiconductor device |
DE3016749A1 (de) * | 1980-04-30 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung |
DE3044341C2 (de) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor |
JPS5799771A (en) * | 1980-12-12 | 1982-06-21 | Hitachi Ltd | Semiconductor device |
JPS61294856A (ja) * | 1985-06-21 | 1986-12-25 | Nec Corp | 高耐圧半導体装置 |
JPS62142356A (ja) * | 1985-12-17 | 1987-06-25 | Sanken Electric Co Ltd | トランジスタ |
US4967254A (en) * | 1987-07-16 | 1990-10-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
JPH0262048A (ja) * | 1988-08-27 | 1990-03-01 | Fuji Electric Co Ltd | トランジスタ |
JP2551152B2 (ja) * | 1989-06-29 | 1996-11-06 | 富士電機株式会社 | Mosコントロールサイリスタ |
JPH067555B2 (ja) * | 1989-07-10 | 1994-01-26 | サンケン電気株式会社 | マルチセル型トランジスタ |
US5716859A (en) * | 1995-12-22 | 1998-02-10 | The Whitaker Corporation | Method of fabricating a silicon BJT |
EP0878848A1 (fr) * | 1997-05-16 | 1998-11-18 | STMicroelectronics S.r.l. | Transistor bipolaire vertical de puissance à géométrie interdigitée et optimisation de la différence de potentiel base-émetteur |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3300694A (en) * | 1962-12-20 | 1967-01-24 | Westinghouse Electric Corp | Semiconductor controlled rectifier with firing pin portion on emitter |
US3337783A (en) * | 1964-01-16 | 1967-08-22 | Westinghouse Electric Corp | Shorted emitter controlled rectifier with improved turn-off gain |
CH436494A (de) * | 1966-04-22 | 1967-05-31 | Bbc Brown Boveri & Cie | Steuerbares Halbleiterventil |
US3617828A (en) * | 1969-09-24 | 1971-11-02 | Gen Electric | Semiconductor unijunction transistor device having a controlled cross-sectional area base contact region |
US3641403A (en) * | 1970-05-25 | 1972-02-08 | Mitsubishi Electric Corp | Thyristor with degenerate semiconductive region |
US3896477A (en) * | 1973-11-07 | 1975-07-22 | Jearld L Hutson | Multilayer semiconductor switching devices |
JPS512526U (fr) * | 1974-06-24 | 1976-01-09 | ||
US4100561A (en) * | 1976-05-24 | 1978-07-11 | Rca Corp. | Protective circuit for MOS devices |
-
1976
- 1976-12-20 FR FR7638303A patent/FR2374742A1/fr active Granted
-
1977
- 1977-12-07 DE DE19772754412 patent/DE2754412A1/de not_active Withdrawn
- 1977-12-15 CA CA293,149A patent/CA1091816A/fr not_active Expired
- 1977-12-16 NL NL7713947A patent/NL7713947A/xx not_active Application Discontinuation
- 1977-12-16 GB GB52439/77A patent/GB1547125A/en not_active Expired
- 1977-12-17 JP JP15122977A patent/JPS5377473A/ja active Pending
-
1980
- 1980-03-27 US US06/134,395 patent/US4315271A/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0071161A2 (fr) * | 1981-07-28 | 1983-02-09 | Fujitsu Limited | Transistor à structure émetteur en forme de peigne |
EP0071161A3 (en) * | 1981-07-28 | 1983-11-16 | Fujitsu Limited | A transistor having the mesh emitter structure |
EP0096625A1 (fr) * | 1982-06-08 | 1983-12-21 | Thomson-Csf | Structure de doigt d'émetteur dans un transistor de commutation et procédé de fabrication |
FR2570879A1 (fr) * | 1984-09-21 | 1986-03-28 | Thomson Csf | Transistor bipolaire de puissance utilisable en commutation |
EP0609351A1 (fr) * | 1991-10-23 | 1994-08-10 | MicroUnity Systems Engineering, Inc. | Transistor bipolaire presentant des caracteristiques ameliorees de gain en courant et de claquage |
EP0609351A4 (fr) * | 1991-10-23 | 1995-01-04 | Microunity Systems Eng | Transistor bipolaire presentant des caracteristiques ameliorees de gain en courant et de claquage. |
Also Published As
Publication number | Publication date |
---|---|
DE2754412A1 (de) | 1978-06-22 |
JPS5377473A (en) | 1978-07-08 |
US4315271A (en) | 1982-02-09 |
CA1091816A (fr) | 1980-12-16 |
GB1547125A (en) | 1979-06-06 |
FR2374742B1 (fr) | 1980-12-05 |
NL7713947A (nl) | 1978-06-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name | ||
ST | Notification of lapse |