CH436494A - Steuerbares Halbleiterventil - Google Patents

Steuerbares Halbleiterventil

Info

Publication number
CH436494A
CH436494A CH589466A CH589466A CH436494A CH 436494 A CH436494 A CH 436494A CH 589466 A CH589466 A CH 589466A CH 589466 A CH589466 A CH 589466A CH 436494 A CH436494 A CH 436494A
Authority
CH
Switzerland
Prior art keywords
controllable semiconductor
semiconductor valve
valve
controllable
semiconductor
Prior art date
Application number
CH589466A
Other languages
English (en)
Inventor
Edouard Dipl Ing Eugster
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH589466A priority Critical patent/CH436494A/de
Priority to DE19661539644 priority patent/DE1539644B1/de
Priority to DE6607598U priority patent/DE6607598U/de
Priority to NL676702749A priority patent/NL154624B/xx
Priority to US630927A priority patent/US3432733A/en
Priority to FR103262A priority patent/FR1526332A/fr
Priority to SE05595/67A priority patent/SE325645B/xx
Priority to GB18203/67A priority patent/GB1106637A/en
Publication of CH436494A publication Critical patent/CH436494A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
CH589466A 1966-04-22 1966-04-22 Steuerbares Halbleiterventil CH436494A (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
CH589466A CH436494A (de) 1966-04-22 1966-04-22 Steuerbares Halbleiterventil
DE19661539644 DE1539644B1 (de) 1966-04-22 1966-05-13 Thyristor mit einer Halbleiterscheibe mit vier schichtfoermigen Zonen
DE6607598U DE6607598U (de) 1966-04-22 1966-05-13 Steuerbares halbleiterventil.
NL676702749A NL154624B (nl) 1966-04-22 1967-02-23 Bestuurbare halfgeleidergelijkrichter.
US630927A US3432733A (en) 1966-04-22 1967-04-14 Controllable semi-conductor element
FR103262A FR1526332A (fr) 1966-04-22 1967-04-19 Soupape commandée à semi-conducteurs
SE05595/67A SE325645B (de) 1966-04-22 1967-04-20
GB18203/67A GB1106637A (en) 1966-04-22 1967-04-20 Controllable semi-conductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH589466A CH436494A (de) 1966-04-22 1966-04-22 Steuerbares Halbleiterventil

Publications (1)

Publication Number Publication Date
CH436494A true CH436494A (de) 1967-05-31

Family

ID=4301121

Family Applications (1)

Application Number Title Priority Date Filing Date
CH589466A CH436494A (de) 1966-04-22 1966-04-22 Steuerbares Halbleiterventil

Country Status (6)

Country Link
US (1) US3432733A (de)
CH (1) CH436494A (de)
DE (2) DE6607598U (de)
GB (1) GB1106637A (de)
NL (1) NL154624B (de)
SE (1) SE325645B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2300754A1 (de) * 1973-01-08 1974-07-11 Siemens Ag Thyristor
FR2374742A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche pour tensions elevees et son procede de fabrication

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3280392A (en) * 1961-05-09 1966-10-18 Siemens Ag Electronic semiconductor device of the four-layer junction type
US3277352A (en) * 1963-03-14 1966-10-04 Itt Four layer semiconductor device
US3337783A (en) * 1964-01-16 1967-08-22 Westinghouse Electric Corp Shorted emitter controlled rectifier with improved turn-off gain
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3337782A (en) * 1964-04-01 1967-08-22 Westinghouse Electric Corp Semiconductor controlled rectifier having a shorted emitter at a plurality of points

Also Published As

Publication number Publication date
DE1539644B1 (de) 1970-07-02
DE6607598U (de) 1971-03-25
US3432733A (en) 1969-03-11
SE325645B (de) 1970-07-06
GB1106637A (en) 1968-03-20
NL6702749A (de) 1967-10-23
NL154624B (nl) 1977-09-15

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