NL7713947A - Vermogenstransistor en werkwijze voor het vervaardigen ervan. - Google Patents
Vermogenstransistor en werkwijze voor het vervaardigen ervan.Info
- Publication number
- NL7713947A NL7713947A NL7713947A NL7713947A NL7713947A NL 7713947 A NL7713947 A NL 7713947A NL 7713947 A NL7713947 A NL 7713947A NL 7713947 A NL7713947 A NL 7713947A NL 7713947 A NL7713947 A NL 7713947A
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- power transistor
- transistor
- power
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7638303A FR2374742A1 (fr) | 1976-12-20 | 1976-12-20 | Transistor multicouche pour tensions elevees et son procede de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7713947A true NL7713947A (nl) | 1978-06-22 |
Family
ID=9181255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7713947A NL7713947A (nl) | 1976-12-20 | 1977-12-16 | Vermogenstransistor en werkwijze voor het vervaardigen ervan. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4315271A (nl) |
JP (1) | JPS5377473A (nl) |
CA (1) | CA1091816A (nl) |
DE (1) | DE2754412A1 (nl) |
FR (1) | FR2374742A1 (nl) |
GB (1) | GB1547125A (nl) |
NL (1) | NL7713947A (nl) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5598854A (en) * | 1979-01-24 | 1980-07-28 | Mitsubishi Electric Corp | Semiconductor device |
DE3016749A1 (de) * | 1980-04-30 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung |
DE3044341C2 (de) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor |
JPS5799771A (en) * | 1980-12-12 | 1982-06-21 | Hitachi Ltd | Semiconductor device |
JPS5818964A (ja) * | 1981-07-28 | 1983-02-03 | Fujitsu Ltd | 半導体装置 |
FR2528233A1 (fr) * | 1982-06-08 | 1983-12-09 | Thomson Csf | Structure de doigt d'emetteur dans un transistor de commutation |
FR2570879B1 (fr) * | 1984-09-21 | 1987-05-22 | Thomson Csf | Transistor bipolaire de puissance utilisable en commutation |
JPS61294856A (ja) * | 1985-06-21 | 1986-12-25 | Nec Corp | 高耐圧半導体装置 |
JPS62142356A (ja) * | 1985-12-17 | 1987-06-25 | Sanken Electric Co Ltd | トランジスタ |
US4967254A (en) * | 1987-07-16 | 1990-10-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
JPH0262048A (ja) * | 1988-08-27 | 1990-03-01 | Fuji Electric Co Ltd | トランジスタ |
JP2551152B2 (ja) * | 1989-06-29 | 1996-11-06 | 富士電機株式会社 | Mosコントロールサイリスタ |
JPH067555B2 (ja) * | 1989-07-10 | 1994-01-26 | サンケン電気株式会社 | マルチセル型トランジスタ |
CA2120261A1 (en) * | 1991-10-23 | 1993-04-29 | James A. Matthews | Bipolar junction transistor exhibiting improved beta and punch-through characteristics |
US5716859A (en) * | 1995-12-22 | 1998-02-10 | The Whitaker Corporation | Method of fabricating a silicon BJT |
EP0878848A1 (en) * | 1997-05-16 | 1998-11-18 | STMicroelectronics S.r.l. | Vertical bipolar semiconductor power transistor with an interdigitised geometry, with optimisation of the base-to-emitter potential difference |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3300694A (en) * | 1962-12-20 | 1967-01-24 | Westinghouse Electric Corp | Semiconductor controlled rectifier with firing pin portion on emitter |
US3337783A (en) * | 1964-01-16 | 1967-08-22 | Westinghouse Electric Corp | Shorted emitter controlled rectifier with improved turn-off gain |
CH436494A (de) * | 1966-04-22 | 1967-05-31 | Bbc Brown Boveri & Cie | Steuerbares Halbleiterventil |
US3617828A (en) * | 1969-09-24 | 1971-11-02 | Gen Electric | Semiconductor unijunction transistor device having a controlled cross-sectional area base contact region |
US3641403A (en) * | 1970-05-25 | 1972-02-08 | Mitsubishi Electric Corp | Thyristor with degenerate semiconductive region |
US3896477A (en) * | 1973-11-07 | 1975-07-22 | Jearld L Hutson | Multilayer semiconductor switching devices |
JPS512526U (nl) * | 1974-06-24 | 1976-01-09 | ||
US4100561A (en) * | 1976-05-24 | 1978-07-11 | Rca Corp. | Protective circuit for MOS devices |
-
1976
- 1976-12-20 FR FR7638303A patent/FR2374742A1/fr active Granted
-
1977
- 1977-12-07 DE DE19772754412 patent/DE2754412A1/de not_active Withdrawn
- 1977-12-15 CA CA293,149A patent/CA1091816A/en not_active Expired
- 1977-12-16 GB GB52439/77A patent/GB1547125A/en not_active Expired
- 1977-12-16 NL NL7713947A patent/NL7713947A/nl not_active Application Discontinuation
- 1977-12-17 JP JP15122977A patent/JPS5377473A/ja active Pending
-
1980
- 1980-03-27 US US06/134,395 patent/US4315271A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2374742A1 (fr) | 1978-07-13 |
DE2754412A1 (de) | 1978-06-22 |
JPS5377473A (en) | 1978-07-08 |
US4315271A (en) | 1982-02-09 |
GB1547125A (en) | 1979-06-06 |
CA1091816A (en) | 1980-12-16 |
FR2374742B1 (nl) | 1980-12-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BV | The patent application has lapsed |