JPS5598854A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5598854A JPS5598854A JP736379A JP736379A JPS5598854A JP S5598854 A JPS5598854 A JP S5598854A JP 736379 A JP736379 A JP 736379A JP 736379 A JP736379 A JP 736379A JP S5598854 A JPS5598854 A JP S5598854A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- junction
- electric field
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To compatibly increase the high dielectric strength of and the high frequency property of a transistor by providing a gate region having higher impurity density than a base region as projected from the base region having an emitter region in a collector region.
CONSTITUTION: A layer 2 becoming a collector region is grown on a semiconductor substrate 1, a base region 3 is formed in the layer 2, and an emitter region 4 is provided in the region 3. A plurality of gate regions 31 each having higher impurity density than the region 3 are protruded from the region 3 in the layer 2. Thus, the electric field distribution along the cross section taken along the line A-A' of the substrate 1 incorporates low electric field gradient due to the existence of a region 31 between a junction J2 of the layer 2 and the region 3 and a junction J4 of the layer 2 and the region 31 as designated by a curve I. Accordingly, the dielectric strength of the region 3 becomes high. Further, the thickness of the region 3 can be reduced to improve the frequency characteristics.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP736379A JPS5598854A (en) | 1979-01-24 | 1979-01-24 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP736379A JPS5598854A (en) | 1979-01-24 | 1979-01-24 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5598854A true JPS5598854A (en) | 1980-07-28 |
Family
ID=11663874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP736379A Pending JPS5598854A (en) | 1979-01-24 | 1979-01-24 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5598854A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61294856A (en) * | 1985-06-21 | 1986-12-25 | Nec Corp | High withstand voltage semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49129483A (en) * | 1973-04-10 | 1974-12-11 | ||
JPS5377473A (en) * | 1976-12-20 | 1978-07-08 | Philips Nv | Transistor and method of producing same |
-
1979
- 1979-01-24 JP JP736379A patent/JPS5598854A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49129483A (en) * | 1973-04-10 | 1974-12-11 | ||
JPS5377473A (en) * | 1976-12-20 | 1978-07-08 | Philips Nv | Transistor and method of producing same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61294856A (en) * | 1985-06-21 | 1986-12-25 | Nec Corp | High withstand voltage semiconductor device |
JPH0466103B2 (en) * | 1985-06-21 | 1992-10-22 | Nippon Electric Co |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5586151A (en) | Manufacture of semiconductor integrated circuit | |
JPS55160444A (en) | Manufacture of semiconductor device | |
JPS5598854A (en) | Semiconductor device | |
JPS5473585A (en) | Gate turn-off thyristor | |
JPS642360A (en) | Hetero-junction bipolar transistor | |
JPS5627942A (en) | Semiconductor device and its manufacturing method | |
JPS5778171A (en) | Thyristor | |
GB1325082A (en) | Semiconductor devices | |
JPS5649575A (en) | Junction type field effect semiconductor | |
JPS55118665A (en) | Semiconductor device | |
JPS5496975A (en) | Semiconductor device | |
JPS5522874A (en) | Semiconductor integrated circuit device with lateral transistor | |
JPS5522875A (en) | Manufacturing method of semiconductor integrated circuit device with lateral transistor | |
JPS5368990A (en) | Production of semiconductor integrated circuit | |
JPS5645046A (en) | Semiconductor integrated circuit device and manufacture thereof | |
JPS55133564A (en) | Semiconductor logic element | |
JPS5413281A (en) | Longitudinal pnp transistor assembled in semiconductor integrated circuit | |
JPS52100881A (en) | Production of semiconductor device | |
JPS6421964A (en) | Hetero-bipolar transistor | |
JPS54158886A (en) | Semiconductor device and its manufacture | |
JPS5496976A (en) | Transistor for power | |
JPS54154978A (en) | Manufacture of semiconductor device | |
JPS5417680A (en) | Manufacture of electrostatic induction type transistor | |
JPS5630752A (en) | Semiconductor device | |
JPS5787170A (en) | Semiconductor device |