JPS5598854A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5598854A
JPS5598854A JP736379A JP736379A JPS5598854A JP S5598854 A JPS5598854 A JP S5598854A JP 736379 A JP736379 A JP 736379A JP 736379 A JP736379 A JP 736379A JP S5598854 A JPS5598854 A JP S5598854A
Authority
JP
Japan
Prior art keywords
region
layer
junction
electric field
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP736379A
Other languages
Japanese (ja)
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP736379A priority Critical patent/JPS5598854A/en
Publication of JPS5598854A publication Critical patent/JPS5598854A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To compatibly increase the high dielectric strength of and the high frequency property of a transistor by providing a gate region having higher impurity density than a base region as projected from the base region having an emitter region in a collector region.
CONSTITUTION: A layer 2 becoming a collector region is grown on a semiconductor substrate 1, a base region 3 is formed in the layer 2, and an emitter region 4 is provided in the region 3. A plurality of gate regions 31 each having higher impurity density than the region 3 are protruded from the region 3 in the layer 2. Thus, the electric field distribution along the cross section taken along the line A-A' of the substrate 1 incorporates low electric field gradient due to the existence of a region 31 between a junction J2 of the layer 2 and the region 3 and a junction J4 of the layer 2 and the region 31 as designated by a curve I. Accordingly, the dielectric strength of the region 3 becomes high. Further, the thickness of the region 3 can be reduced to improve the frequency characteristics.
COPYRIGHT: (C)1980,JPO&Japio
JP736379A 1979-01-24 1979-01-24 Semiconductor device Pending JPS5598854A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP736379A JPS5598854A (en) 1979-01-24 1979-01-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP736379A JPS5598854A (en) 1979-01-24 1979-01-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5598854A true JPS5598854A (en) 1980-07-28

Family

ID=11663874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP736379A Pending JPS5598854A (en) 1979-01-24 1979-01-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5598854A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61294856A (en) * 1985-06-21 1986-12-25 Nec Corp High withstand voltage semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129483A (en) * 1973-04-10 1974-12-11
JPS5377473A (en) * 1976-12-20 1978-07-08 Philips Nv Transistor and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129483A (en) * 1973-04-10 1974-12-11
JPS5377473A (en) * 1976-12-20 1978-07-08 Philips Nv Transistor and method of producing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61294856A (en) * 1985-06-21 1986-12-25 Nec Corp High withstand voltage semiconductor device
JPH0466103B2 (en) * 1985-06-21 1992-10-22 Nippon Electric Co

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