JPS54154978A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54154978A JPS54154978A JP6455678A JP6455678A JPS54154978A JP S54154978 A JPS54154978 A JP S54154978A JP 6455678 A JP6455678 A JP 6455678A JP 6455678 A JP6455678 A JP 6455678A JP S54154978 A JPS54154978 A JP S54154978A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- channel region
- drain
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To increase the dielectric strength as well as to decrease the noise by securing a high impurity at the both ends and a low density at the center respectively for the channel region to be provided between the source and the drain of the J-FET and then forming covering over the low-density region and the high-density region of the drain side.
CONSTITUTION: SiO2 film 21 is coated on P-type Si substrate 20, and this film is removed on the channel region to form SiO2 film 22 there. Then Si3N4 film 23 and SiO2 film 24 are coated in lamination over the entire surface. Photo resist film 25 is provided at the concave part caused on the channel region, and film 23 and 24 exposed at the concave part are removed by etching with film 25 used as the mask. After this, film 25 is removed to form by ion injection within the concave part N+ source-side channel region 28, central channel region 27 and drain-side channel region 28' featuring a high, low and high impurity density respectively. These regions are then converted to deep regions 31, 30 and 31' each through the heat treatment, and gate region 35 is formed covering over region 30 and 31' with N+- type source and drain region 32 and 33 formed by diffusion at both sides of region 35.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6455678A JPS54154978A (en) | 1978-05-29 | 1978-05-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6455678A JPS54154978A (en) | 1978-05-29 | 1978-05-29 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54154978A true JPS54154978A (en) | 1979-12-06 |
Family
ID=13261612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6455678A Pending JPS54154978A (en) | 1978-05-29 | 1978-05-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54154978A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6396962A (en) * | 1986-10-13 | 1988-04-27 | Nec Corp | Fieid-effect transistor and manufacture thereof |
-
1978
- 1978-05-29 JP JP6455678A patent/JPS54154978A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6396962A (en) * | 1986-10-13 | 1988-04-27 | Nec Corp | Fieid-effect transistor and manufacture thereof |
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