FR2363201A1 - Procede epitaxique de realisation d'un dispositif semi-conducteur ou ga al as et dispositif ainsi obtenu - Google Patents
Procede epitaxique de realisation d'un dispositif semi-conducteur ou ga al as et dispositif ainsi obtenuInfo
- Publication number
- FR2363201A1 FR2363201A1 FR7726191A FR7726191A FR2363201A1 FR 2363201 A1 FR2363201 A1 FR 2363201A1 FR 7726191 A FR7726191 A FR 7726191A FR 7726191 A FR7726191 A FR 7726191A FR 2363201 A1 FR2363201 A1 FR 2363201A1
- Authority
- FR
- France
- Prior art keywords
- layer
- gallium
- epitaxical
- realization
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 238000000407 epitaxy Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Semiconductor Lasers (AREA)
- Weting (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Un système de couches présentant une couche de contact en arséniure de gallium est formée par voie épitaxiale, après quoi, au cours d'un second processus d'épitaxie, une couche en arséiniure de gallium-aluminium est formée sélectivement. Pour eviter que cette dernière couche ne se forme sur la couche en arséniure de gallium, celle-ci est recouverte d'une couche de masquage en arséniure de gallium-aluminium, dont la composition diffère de celle de la couche à appliquer sélectivement, après quoi la couche de masquage peut être enlevée sélectivement. Application : photodiodes.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7609607A NL7609607A (nl) | 1976-08-30 | 1976-08-30 | Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2363201A1 true FR2363201A1 (fr) | 1978-03-24 |
FR2363201B1 FR2363201B1 (fr) | 1983-02-04 |
Family
ID=19826814
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7726191A Granted FR2363201A1 (fr) | 1976-08-30 | 1977-08-29 | Procede epitaxique de realisation d'un dispositif semi-conducteur ou ga al as et dispositif ainsi obtenu |
Country Status (12)
Country | Link |
---|---|
US (1) | US4137107A (fr) |
JP (1) | JPS5329666A (fr) |
AR (1) | AR210970A1 (fr) |
AU (1) | AU504549B2 (fr) |
BR (1) | BR7705750A (fr) |
CA (1) | CA1090458A (fr) |
DE (1) | DE2737150A1 (fr) |
FR (1) | FR2363201A1 (fr) |
GB (1) | GB1530085A (fr) |
IT (1) | IT1086123B (fr) |
NL (1) | NL7609607A (fr) |
SE (1) | SE7709678L (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7712315A (nl) * | 1977-11-09 | 1979-05-11 | Philips Nv | Werkwijze voor het epitaxiaal neerslaan van verscheidene lagen. |
JPS5563887A (en) * | 1978-11-06 | 1980-05-14 | Nec Corp | Light-emitting diode |
NL7903197A (nl) * | 1979-04-24 | 1980-10-28 | Philips Nv | Werkwijze voor het vervaardigen van een elektrolumines- cerende halfgeleiderinrichting en elektroluminescerende halfgeleiderinrichting vervaardigd volgens de werkwijze |
US4233090A (en) * | 1979-06-28 | 1980-11-11 | Rca Corporation | Method of making a laser diode |
GB2070859B (en) * | 1980-02-07 | 1984-03-21 | Stanley Electric Co Ltd | Hetero-junction light-emitting diode |
US4439910A (en) * | 1980-09-29 | 1984-04-03 | Hughes Aircraft Company | Process for fabrication of monolithic transistor coupled electroluminescent diode |
US4578127A (en) * | 1982-08-13 | 1986-03-25 | At&T Bell Laboratories | Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer |
US4661961A (en) * | 1983-06-20 | 1987-04-28 | American Telephone And Telegraph Company, At&T Bell Laboratories | Buried heterostructure devices with unique contact-facilitating layers |
US4566171A (en) * | 1983-06-20 | 1986-01-28 | At&T Bell Laboratories | Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices |
JPS61107758A (ja) * | 1984-10-31 | 1986-05-26 | Fujitsu Ltd | GaAs集積回路及びその製造方法 |
US4788159A (en) * | 1986-09-18 | 1988-11-29 | Eastman Kodak Company | Process for forming a positive index waveguide |
US4818722A (en) * | 1986-09-29 | 1989-04-04 | Siemens Aktiengesellschaft | Method for generating a strip waveguide |
EP0287793A3 (fr) * | 1987-04-23 | 1991-03-06 | International Business Machines Corporation | Produit de substrat pour circuit intégré |
US4897361A (en) * | 1987-12-14 | 1990-01-30 | American Telephone & Telegraph Company, At&T Bell Laboratories | Patterning method in the manufacture of miniaturized devices |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2509585A1 (de) * | 1974-03-05 | 1975-09-11 | Matsushita Electric Ind Co Ltd | Halbleiterelement und verfahren zu dessen herstellung |
FR2263624A1 (fr) * | 1974-03-04 | 1975-10-03 | Hitachi Ltd | |
US3936855A (en) * | 1974-08-08 | 1976-02-03 | International Telephone And Telegraph Corporation | Light-emitting diode fabrication process |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT963303B (it) * | 1971-07-29 | 1974-01-10 | Licentia Gmbh | Laser a semiconduttore |
US3824493A (en) * | 1972-09-05 | 1974-07-16 | Bell Telephone Labor Inc | Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror |
US3833435A (en) * | 1972-09-25 | 1974-09-03 | Bell Telephone Labor Inc | Dielectric optical waveguides and technique for fabricating same |
US3893044A (en) * | 1973-04-12 | 1975-07-01 | Ibm | Laser device having enclosed laser cavity |
US3915765A (en) * | 1973-06-25 | 1975-10-28 | Bell Telephone Labor Inc | MBE technique for fabricating semiconductor devices having low series resistance |
JPS5751276B2 (fr) * | 1973-10-23 | 1982-11-01 | ||
US3938172A (en) * | 1974-05-22 | 1976-02-10 | Rca Corporation | Semiconductor injection laser |
GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
-
1976
- 1976-08-30 NL NL7609607A patent/NL7609607A/xx not_active Application Discontinuation
-
1977
- 1977-07-20 AR AR268509A patent/AR210970A1/es active
- 1977-07-25 US US05/818,312 patent/US4137107A/en not_active Expired - Lifetime
- 1977-08-17 DE DE19772737150 patent/DE2737150A1/de active Granted
- 1977-08-18 CA CA285,165A patent/CA1090458A/fr not_active Expired
- 1977-08-26 GB GB35937/77A patent/GB1530085A/en not_active Expired
- 1977-08-26 IT IT27017/77A patent/IT1086123B/it active
- 1977-08-27 JP JP10221177A patent/JPS5329666A/ja active Granted
- 1977-08-29 FR FR7726191A patent/FR2363201A1/fr active Granted
- 1977-08-29 SE SE7709678A patent/SE7709678L/xx not_active Application Discontinuation
- 1977-08-29 AU AU28315/77A patent/AU504549B2/en not_active Expired
- 1977-08-29 BR BR7705750A patent/BR7705750A/pt unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2263624A1 (fr) * | 1974-03-04 | 1975-10-03 | Hitachi Ltd | |
DE2509585A1 (de) * | 1974-03-05 | 1975-09-11 | Matsushita Electric Ind Co Ltd | Halbleiterelement und verfahren zu dessen herstellung |
US3936855A (en) * | 1974-08-08 | 1976-02-03 | International Telephone And Telegraph Corporation | Light-emitting diode fabrication process |
Non-Patent Citations (1)
Title |
---|
EXBK/76 * |
Also Published As
Publication number | Publication date |
---|---|
DE2737150A1 (de) | 1978-03-09 |
AR210970A1 (es) | 1977-09-30 |
DE2737150C2 (fr) | 1989-10-12 |
IT1086123B (it) | 1985-05-28 |
FR2363201B1 (fr) | 1983-02-04 |
JPS5329666A (en) | 1978-03-20 |
US4137107A (en) | 1979-01-30 |
CA1090458A (fr) | 1980-11-25 |
AU504549B2 (en) | 1979-10-18 |
GB1530085A (en) | 1978-10-25 |
BR7705750A (pt) | 1978-07-04 |
SE7709678L (sv) | 1978-03-01 |
JPS567290B2 (fr) | 1981-02-17 |
AU2831577A (en) | 1979-03-08 |
NL7609607A (nl) | 1978-03-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |