KR970054535A - 화합물 반도체 장치의 제조 방법 - Google Patents

화합물 반도체 장치의 제조 방법 Download PDF

Info

Publication number
KR970054535A
KR970054535A KR1019960073952A KR19960073952A KR970054535A KR 970054535 A KR970054535 A KR 970054535A KR 1019960073952 A KR1019960073952 A KR 1019960073952A KR 19960073952 A KR19960073952 A KR 19960073952A KR 970054535 A KR970054535 A KR 970054535A
Authority
KR
South Korea
Prior art keywords
substrate
manufacturing
semiconductor device
compound semiconductor
gaas
Prior art date
Application number
KR1019960073952A
Other languages
English (en)
Other versions
KR100244002B1 (ko
Inventor
데쯔로 아사노
Original Assignee
다까노 야스아끼
상요덴기 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다까노 야스아끼, 상요덴기 가부시기가이샤 filed Critical 다까노 야스아끼
Publication of KR970054535A publication Critical patent/KR970054535A/ko
Application granted granted Critical
Publication of KR100244002B1 publication Critical patent/KR100244002B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

GaAs 디바이스의 특성, 품질을 유지하면서 낮은 제조 코스트로 제조할 수 있는 화합물 반도체 장치의 제조방법을 제공한다. 이를 위해 본 발명의 화합물 반도체 장치의 제조 방법은 반절연성 GaAs 기판(10)을 준비하는 공정, 상기 기판에 이온 주입에 의해 불순물을 도입하여 채널 영역(11)을 형성하는 공정, 상기 기판의 채널 영역상에 패시베이션막으로서 언도프 GaAs 층 또는 GaInP층(20)을 에피택셜 성장하는 공정, 및 상기 기판상에 소스. 드레인 전극(14,15) 및 게이트 전극(13)을 형성하는 공정으로 이루어진다.

Description

화합물 반도체 장치의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시 형태의 화합물 반도체 장치의 단면도.

Claims (1)

  1. 반절연성 GaAs기판을 준비하는 공정, 상기 기판에 이온 주입에 의해 불순물을 도입하여 채널 영역을 형성하는 공정, 상기 기판의 채널 영역상에 패시베이션막으로서 언도프 GaAs 층 또는 GaInP층을 에피택셜 성장하는 공정, 및 상기 기판상에 소스. 드레인 전극 및 게이트 전극을 형성하는 공정으로 이루어지는 것을 특징으로 하는 화합물 반도체 장치의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960073952A 1995-12-28 1996-12-27 화합물 반도체 장치의 제조 방법 KR100244002B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7343400A JPH09186176A (ja) 1995-12-28 1995-12-28 化合物半導体装置の製造方法
JP95-343400 1995-12-28

Publications (2)

Publication Number Publication Date
KR970054535A true KR970054535A (ko) 1997-07-31
KR100244002B1 KR100244002B1 (ko) 2000-02-01

Family

ID=18361224

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960073952A KR100244002B1 (ko) 1995-12-28 1996-12-27 화합물 반도체 장치의 제조 방법

Country Status (2)

Country Link
JP (1) JPH09186176A (ko)
KR (1) KR100244002B1 (ko)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS628575A (ja) * 1985-07-04 1987-01-16 Nec Corp 半導体装置
JPH01268071A (ja) * 1988-04-20 1989-10-25 Hitachi Ltd 化合物半導体素子

Also Published As

Publication number Publication date
JPH09186176A (ja) 1997-07-15
KR100244002B1 (ko) 2000-02-01

Similar Documents

Publication Publication Date Title
EP0085916A3 (en) Method of fabricating field effect transistors
KR860000705A (ko) N-채널 및 p-채널 트랜지스터들을 포함하는 반도체 장치 및 그의 제조방법
KR950030282A (ko) 박막 트랜지스터의 제조방법
KR970004083A (ko) N형 헤테로구조 절연 게이트 전계효과 트랜지스터와 그 제조 방법
US5900641A (en) Field effect semiconductor device having a reduced leakage current
KR920010955A (ko) Soimos트랜지스터
KR970054535A (ko) 화합물 반도체 장치의 제조 방법
KR960012302A (ko) Soi형 반도체장치 및 그 제조방법
JPS57193069A (en) Semiconductor device
KR920013776A (ko) 전계효과 트랜지스터
KR930001485A (ko) Gldd 모스패트 제조방법
KR950024300A (ko) 트렌치형 소자분리구조를 갖는 반도체 장치 및 그 제조방법
KR100249194B1 (ko) 자기 정렬형 메스에프이티 제조방법
KR940020599A (ko) 전계효과트랜지스터(field effect transistor)
KR940003096A (ko) 고전자 이동도 트랜지스터 및 그의 제조방법
KR970077366A (ko) 고전압 트랜지스터의 제조방법
JPS6482569A (en) Field-effect transistor and manufacture thereof
KR950034623A (ko) 반도체소자 제조방법
KR920018973A (ko) 리세스드 채널 모오스 fet 제조방법 및 구조
KR970018688A (ko) 모스 트랜지스터 및 그 제조방법
KR910001930A (ko) 자기정렬된 저도핑된 접합형성방법
KR970053101A (ko) 화합물 반도체 장치 및 그 제조 방법
KR970008582A (ko) 반도체 장치의 제조방법
KR930001496A (ko) 화합물 반도체 소자의 제조방법
JPS6490566A (en) Field-effect transistor and manufacture thereof

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee