KR940020599A - 전계효과트랜지스터(field effect transistor) - Google Patents

전계효과트랜지스터(field effect transistor) Download PDF

Info

Publication number
KR940020599A
KR940020599A KR1019940003425A KR19940003425A KR940020599A KR 940020599 A KR940020599 A KR 940020599A KR 1019940003425 A KR1019940003425 A KR 1019940003425A KR 19940003425 A KR19940003425 A KR 19940003425A KR 940020599 A KR940020599 A KR 940020599A
Authority
KR
South Korea
Prior art keywords
effect transistor
field effect
fet
channel layer
layer
Prior art date
Application number
KR1019940003425A
Other languages
English (en)
Inventor
켄이치로 마츠자키
시게루 나카지마
노부히로 쿠와타
켄지 오토베
노부오 시가
Original Assignee
쿠라우찌 노리타카
스미도모덴기 고오교오 가부시기가이샤(Sumitomo Electric Industries, Ltd.)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쿠라우찌 노리타카, 스미도모덴기 고오교오 가부시기가이샤(Sumitomo Electric Industries, Ltd.) filed Critical 쿠라우찌 노리타카
Publication of KR940020599A publication Critical patent/KR940020599A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

본 발명은 초고속동작을 하는 전계효과트랜지스터(FET)의 구조에 관한 것으로서, 채널전자의 이동도가 높고, 포화전자속도가 높은 FET를 제공하는 것을 목적으로 한 것이며, 그 구성에 있어서, 반절연성 GaAs 반도체기판(11)위에 언도우프의 버퍼층(12), 고농도의 채널층(13), 언도우프의 캡층(14)이 형성된다. 다음에, 선택이온주입에 의해 n+형의 드레인영역(15) 및 소스영역(16)이 형성된다.
다음에 게이트전극(17), 드레인전극(18) 및 소스전극(19)이 형성된다. 채널층(13)은 SiH4가스의 공급량이 서서히 높아져서 형성되기 때문에, 그 불순물농도는 기판 표면으로부터 떨어짐에 따라서 낮게되어 있는 것을 특징으로 한 것이다.

Description

전계효과트랜지스터(FIELD EFFECT TRANSISTOR)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 의한 FET의 구조를 표시한 단면도,
제2도는 본 실시예에 의한 FET의 게이트전극 아래의 불순물프로파일을 표시한 그래프,
제3도는 캐리어가 되는 전자가 채널공핍층으로부터 받는 영향을 표시한 FET 단면도.

Claims (1)

  1. 불순물을 고농도로 함유해서 박층화된 반도체층을 채널층으로 하는 전계효과트랜지스터에 있어서, 상기 채널층은, 기판표면으로부터 기판심부를 향해서 불순물농도가 낮게 형성되어 있는 것을 특징으로 하느 전계효과트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
KR1019940003425A 1993-02-26 1994-02-25 전계효과트랜지스터(field effect transistor) KR940020599A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-38287 1993-02-26
JP3828793 1993-02-26

Publications (1)

Publication Number Publication Date
KR940020599A true KR940020599A (ko) 1994-09-16

Family

ID=12521099

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940003425A KR940020599A (ko) 1993-02-26 1994-02-25 전계효과트랜지스터(field effect transistor)

Country Status (3)

Country Link
EP (1) EP0613191A3 (ko)
KR (1) KR940020599A (ko)
CA (1) CA2116266A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086767A (ja) * 2001-09-14 2003-03-20 Matsushita Electric Ind Co Ltd 半導体装置
JP2008288365A (ja) 2007-05-17 2008-11-27 Mitsubishi Electric Corp 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61252665A (ja) * 1985-05-01 1986-11-10 Fujitsu Ltd 電荷転送装置
JPH04206736A (ja) * 1990-11-30 1992-07-28 Sanyo Electric Co Ltd 電界効果型半導体装置
JP2549206B2 (ja) * 1990-12-27 1996-10-30 住友電気工業株式会社 電界効果トランジスタ

Also Published As

Publication number Publication date
EP0613191A2 (en) 1994-08-31
CA2116266A1 (en) 1994-08-27
EP0613191A3 (en) 1995-01-25

Similar Documents

Publication Publication Date Title
KR850005154A (ko) 화합물 반도체 집적회로 장치
JPS55148464A (en) Mos semiconductor device and its manufacture
KR860000705A (ko) N-채널 및 p-채널 트랜지스터들을 포함하는 반도체 장치 및 그의 제조방법
KR950030282A (ko) 박막 트랜지스터의 제조방법
KR920018972A (ko) 모오스 fet 제조방법 및 구조
KR940020599A (ko) 전계효과트랜지스터(field effect transistor)
KR920010955A (ko) Soimos트랜지스터
KR920013776A (ko) 전계효과 트랜지스터
KR970008621A (ko) 반도체집적회로장치의 제조방법
KR930018757A (ko) 화합물 반도체장치
KR860007745A (ko) 화합물 반도체장치
JPS6427272A (en) Semiconductor device
KR940016927A (ko) 트렌치(Trench) 구조를 이용한 수직 채널을 갖는 모스트랜지스터(MOS-FET) 제조방법
KR970077366A (ko) 고전압 트랜지스터의 제조방법
KR960015325B1 (ko) 쌍극자 전위 장벽을 갖는 전계효과 트랜지스터
KR950012646A (ko) 트랜지스터의 제조방법
KR920008963A (ko) Mos트랜지스터의 채널도핑방법
JPS63169065A (ja) 絶縁ゲ−ト電界効果トランジスタ
JPS642371A (en) Field-effect transistor
JPS6490566A (en) Field-effect transistor and manufacture thereof
KR970054387A (ko) 모스트랜지스터 제조 방법
KR970054535A (ko) 화합물 반도체 장치의 제조 방법
GB2069754A (en) Field effect transistor
JPS5643765A (en) Field-effect transistor
KR950030383A (ko) 펀치스루 현상을 방지하기 위한 소스/드레인 구조

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application