FR2436829A1 - Procede pour la formation par croissance de couches en gaas de type n par epitaxie a faisceau moleculaire - Google Patents

Procede pour la formation par croissance de couches en gaas de type n par epitaxie a faisceau moleculaire

Info

Publication number
FR2436829A1
FR2436829A1 FR7923577A FR7923577A FR2436829A1 FR 2436829 A1 FR2436829 A1 FR 2436829A1 FR 7923577 A FR7923577 A FR 7923577A FR 7923577 A FR7923577 A FR 7923577A FR 2436829 A1 FR2436829 A1 FR 2436829A1
Authority
FR
France
Prior art keywords
type gaas
molecular beam
beam epitaxy
gaas layers
growth formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7923577A
Other languages
English (en)
Other versions
FR2436829B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2436829A1 publication Critical patent/FR2436829A1/fr
Application granted granted Critical
Publication of FR2436829B1 publication Critical patent/FR2436829B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PROCEDE POUR LA FORMATION PAR CROISSANCE D'UNE COUCHE EN GAAS DE TYPE N SUR UN SUBSTRAT PAR EPITAXIE A FAISCEAU MOLECULAIRE, L'AGENT DE DOPAGE ETANT CONSTITUE PAR S, SE OU TE. LA COUCHE S'OBTIENT A L'AIDE DE FAISCEAUX MOLECULAIRES DE GALLIUM, D'ARSENIC ET DE PBX QUI SONT DIRIGES SUR UN SUBSTRAT CHAUFFE, X REPRESENTANT S, SE OU TE. APPLICATION: DISPOSITIF SEMI-CONDUCTEUR.
FR7923577A 1978-09-22 1979-09-21 Procede pour la formation par croissance de couches en gaas de type n par epitaxie a faisceau moleculaire Granted FR2436829A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7837800A GB2030551B (en) 1978-09-22 1978-09-22 Growing a gaas layer doped with s se or te

Publications (2)

Publication Number Publication Date
FR2436829A1 true FR2436829A1 (fr) 1980-04-18
FR2436829B1 FR2436829B1 (fr) 1984-05-04

Family

ID=10499848

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7923577A Granted FR2436829A1 (fr) 1978-09-22 1979-09-21 Procede pour la formation par croissance de couches en gaas de type n par epitaxie a faisceau moleculaire

Country Status (6)

Country Link
US (1) US4233092A (fr)
JP (1) JPS5542300A (fr)
CA (1) CA1150602A (fr)
DE (1) DE2937425A1 (fr)
FR (1) FR2436829A1 (fr)
GB (1) GB2030551B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0031180A3 (fr) * 1979-12-19 1983-07-20 Philips Electronics Uk Limited Procédé de croissance d'une couche d'un composé III-V dopé par épitaxie par faisceau moléculaire et dispositif semiconducteur comportant un substrat semiconducteur muni d'une couche épitaxiale d'un composé III-V dopé déposé par ce procédé
US4398963A (en) * 1980-11-19 1983-08-16 The United States Of America As Represented By The Secretary Of The Navy Method for making non-alloyed heterojunction ohmic contacts
US4469144A (en) * 1982-05-21 1984-09-04 Becton Dickinson And Company Automatic powder dispensing methods and apparatus
GB2130716A (en) * 1982-11-26 1984-06-06 Philips Electronic Associated Method of determining the composition of an alloy film grown by a layer-by layer process
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon
US4622083A (en) * 1985-03-11 1986-11-11 Texas Instruments Incorporated Molecular beam epitaxial process
JPS61275191A (ja) * 1985-05-29 1986-12-05 Furukawa Electric Co Ltd:The ＧａＡｓ薄膜の気相成長法
JPS63117821A (ja) * 1986-11-07 1988-05-21 Tsumura & Co 粉粒体の計量充填装置
JPH0647515B2 (ja) * 1988-12-08 1994-06-22 シャープ株式会社 化合物半導体エピタキシャル成長法
JPH0831409B2 (ja) * 1990-02-14 1996-03-27 株式会社東芝 化合物半導体装置およびその製造方法
US6508960B1 (en) 1999-07-26 2003-01-21 The United States Of America As Represented By The Secretary Of The Air Force Telluride quaternary nonlinear optic materials
US6304583B1 (en) 1999-07-26 2001-10-16 The United States Of America As Represented By The Secretary Of The Air Force Utilization of telluride quaternary nonlinear optic materials

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1315269A (fr) * 1961-01-03 1963-01-18 Siemens Ag Procédé pour l'application épitactique de minces couches monocristallines à partir de composés semi-conducteurs
FR2027188A1 (fr) * 1968-12-27 1970-09-25 Western Electric Co

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2994621A (en) * 1956-03-29 1961-08-01 Baldwin Piano Co Semi-conductive films and methods of producing them
US3716424A (en) * 1970-04-02 1973-02-13 Us Navy Method of preparation of lead sulfide pn junction diodes
US3751310A (en) * 1971-03-25 1973-08-07 Bell Telephone Labor Inc Germanium doped epitaxial films by the molecular beam method
US3839084A (en) * 1972-11-29 1974-10-01 Bell Telephone Labor Inc Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds
US3915765A (en) * 1973-06-25 1975-10-28 Bell Telephone Labor Inc MBE technique for fabricating semiconductor devices having low series resistance
US3941624A (en) * 1975-03-28 1976-03-02 Bell Telephone Laboratories, Incorporated Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecular beam epitaxy

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1315269A (fr) * 1961-01-03 1963-01-18 Siemens Ag Procédé pour l'application épitactique de minces couches monocristallines à partir de composés semi-conducteurs
FR2027188A1 (fr) * 1968-12-27 1970-09-25 Western Electric Co

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/62 *
EXBK/78 *

Also Published As

Publication number Publication date
CA1150602A (fr) 1983-07-26
US4233092A (en) 1980-11-11
JPS5542300A (en) 1980-03-25
FR2436829B1 (fr) 1984-05-04
GB2030551B (en) 1982-08-04
DE2937425A1 (de) 1980-04-10
GB2030551A (en) 1980-04-10
JPS5747160B2 (fr) 1982-10-07

Similar Documents

Publication Publication Date Title
FR2436829A1 (fr) Procede pour la formation par croissance de couches en gaas de type n par epitaxie a faisceau moleculaire
EP0083716A3 (en) Process for forming iii-v semiconductor mesfet devices, having self-aligned raised source and drain regions
GB1530801A (en) Double heterostructure semiconductor optical devices
FR2387514A1 (fr) Dispositif semi-conducteur et son procede de fabrication
FR2363201A1 (fr) Procede epitaxique de realisation d'un dispositif semi-conducteur ou ga al as et dispositif ainsi obtenu
EP0286428A3 (fr) Procédé pour la fabrication d'un transistor à effet de champ à jonction
FR2408914A1 (fr) Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
GB1439822A (en) Gallium arsenide photocathodes
JPS5728375A (en) Manufacture of semiconductor device
JPS5412261A (en) Semiconductor wafer
GB1467145A (en) Method of forming a wafer of semiconductor material and the wafer so formed
ES2004276A6 (es) Un dispositivo semiconducir que incluye una capa epitaxial sobre un sustrato monocristalino de red desequilibrada
JPS54863A (en) High-concentration n-type layer formation method into gallium arsenide
JPS6459956A (en) Heterostructure bipolar transistor and manufacture thereof
JPS55153322A (en) Molecular beam epitaxial growth
JPS5723280A (en) Field effect type light detector
JPS5737891A (en) Semiconductor laser device
JPS52115678A (en) Double hetero type laser element
JPS5312267A (en) Growth method of semiconductor crystal
JPS54114089A (en) Hall element using gallium arsenide crystal
GB1193416A (en) Improvements in or Relating to Transistors
JPS6450591A (en) Semiconductor device and manufacture thereof
JPS544580A (en) Production of semiconductor devices
JPS5780789A (en) Semiconductor laser device
JPS53104598A (en) Growing method of gallium nitride

Legal Events

Date Code Title Description
ST Notification of lapse