JPS55153322A - Molecular beam epitaxial growth - Google Patents

Molecular beam epitaxial growth

Info

Publication number
JPS55153322A
JPS55153322A JP6124479A JP6124479A JPS55153322A JP S55153322 A JPS55153322 A JP S55153322A JP 6124479 A JP6124479 A JP 6124479A JP 6124479 A JP6124479 A JP 6124479A JP S55153322 A JPS55153322 A JP S55153322A
Authority
JP
Japan
Prior art keywords
molecular beam
epitaxial growth
beam epitaxial
molecular
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6124479A
Other languages
Japanese (ja)
Inventor
Sukehisa Hiyamizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6124479A priority Critical patent/JPS55153322A/en
Publication of JPS55153322A publication Critical patent/JPS55153322A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain a molecular beam expitaxial growth without a break even at an uneven part of a semiconductor surface by a method wherein molecular beams of same components are applied to a substrate surface from two or more different directions. CONSTITUTION:Using two molecular beam sources 3 and 5 established at different positions, beams having the same components of arsenic and gallium are applied to the surface of a substrate. On the lines of irradiating direction of those two molecular beam sources, the molecular beam epitaxial growth having no break can be obtained even at an uneven part of the substrate surface.
JP6124479A 1979-05-18 1979-05-18 Molecular beam epitaxial growth Pending JPS55153322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6124479A JPS55153322A (en) 1979-05-18 1979-05-18 Molecular beam epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6124479A JPS55153322A (en) 1979-05-18 1979-05-18 Molecular beam epitaxial growth

Publications (1)

Publication Number Publication Date
JPS55153322A true JPS55153322A (en) 1980-11-29

Family

ID=13165619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6124479A Pending JPS55153322A (en) 1979-05-18 1979-05-18 Molecular beam epitaxial growth

Country Status (1)

Country Link
JP (1) JPS55153322A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63174310A (en) * 1987-01-14 1988-07-18 Agency Of Ind Science & Technol Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342675A (en) * 1976-09-30 1978-04-18 Matsushita Electric Ind Co Ltd Single crystal device and its production
JPS5386571A (en) * 1977-01-10 1978-07-31 Matsushita Electric Ind Co Ltd Production of self-alignment type crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342675A (en) * 1976-09-30 1978-04-18 Matsushita Electric Ind Co Ltd Single crystal device and its production
JPS5386571A (en) * 1977-01-10 1978-07-31 Matsushita Electric Ind Co Ltd Production of self-alignment type crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63174310A (en) * 1987-01-14 1988-07-18 Agency Of Ind Science & Technol Manufacture of semiconductor device

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