JPS5342675A - Single crystal device and its production - Google Patents
Single crystal device and its productionInfo
- Publication number
- JPS5342675A JPS5342675A JP11812676A JP11812676A JPS5342675A JP S5342675 A JPS5342675 A JP S5342675A JP 11812676 A JP11812676 A JP 11812676A JP 11812676 A JP11812676 A JP 11812676A JP S5342675 A JPS5342675 A JP S5342675A
- Authority
- JP
- Japan
- Prior art keywords
- production
- single crystal
- crystal device
- submicrons
- masks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To eliminate the need for masks at all and readily control and grow crystal of a multidimensional structure at accuracy of submicrons without using any fine beams in supplying material substances onto wafers.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11812676A JPS5342675A (en) | 1976-09-30 | 1976-09-30 | Single crystal device and its production |
US05/815,303 US4171234A (en) | 1976-07-20 | 1977-07-13 | Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles |
GB29739/77A GB1589455A (en) | 1976-07-20 | 1977-07-15 | Crystals and the manufacture thereof |
DE2732807A DE2732807C2 (en) | 1976-07-20 | 1977-07-20 | Process for the production of a semiconductor component with a single crystal structure |
FR7722251A FR2358921A1 (en) | 1976-07-20 | 1977-07-20 | MONOCRISTAL DEVICE AND PROCESS FOR ITS MANUFACTURING |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11812676A JPS5342675A (en) | 1976-09-30 | 1976-09-30 | Single crystal device and its production |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5342675A true JPS5342675A (en) | 1978-04-18 |
JPS5625015B2 JPS5625015B2 (en) | 1981-06-10 |
Family
ID=14728671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11812676A Granted JPS5342675A (en) | 1976-07-20 | 1976-09-30 | Single crystal device and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5342675A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55153322A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Molecular beam epitaxial growth |
JPH01235324A (en) * | 1988-03-16 | 1989-09-20 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Growth of compound semiconductor thin-film crystal and compound semiconductor device |
-
1976
- 1976-09-30 JP JP11812676A patent/JPS5342675A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55153322A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Molecular beam epitaxial growth |
JPH01235324A (en) * | 1988-03-16 | 1989-09-20 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Growth of compound semiconductor thin-film crystal and compound semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5625015B2 (en) | 1981-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5346523A (en) | Controlling method and apparatus for air-fuel ratio | |
JPS5320767A (en) | X-ray mask supporting underlayer and its production | |
JPS5342675A (en) | Single crystal device and its production | |
JPS5421862A (en) | Production of liquid crystal elements | |
JPS5211860A (en) | Liquid phase epitaxial device | |
JPS5384750A (en) | Orientation method of liquid crystal panel | |
JPS5374386A (en) | Semiconductor device | |
JPS53137495A (en) | Grinding device | |
JPS52117557A (en) | Soft x-ray exposure mask and its manufacturing method | |
JPS5353867A (en) | Apparatus for handling long articles and sleepers | |
JPS5317278A (en) | Ion implantation apparatus for semiconductor single crystal wafers | |
JPS5342682A (en) | Junction type field effect transistor and its production | |
JPS5335386A (en) | Production of semiconductor device | |
JPS5261475A (en) | Production of silicon crystal film | |
JPS53136484A (en) | Wafer continuous machining method and unit used for the same | |
JPS5261958A (en) | Method and device for liquid phase crystal crowth | |
JPS51120042A (en) | Apparatus for moistening general granular material | |
JPS52119862A (en) | Semi-conductor device and its manufacture | |
JPS53119281A (en) | Manufacturing apparatus for semiconductor crystal | |
JPS51142795A (en) | Grinding device | |
JPS51140561A (en) | Liquid phase epitaxial growing method | |
JPS5421861A (en) | Production of liquid crystal elements | |
JPS5372567A (en) | Semiconductor device | |
JPS524498A (en) | Method for the production of chromium oxide | |
JPS53129586A (en) | Semiconductor production unit |