FR2363192A1 - Procede permettant d'ameliorer l'adherence des lignes conductrices metalliques formees sur une couche de polyimide - Google Patents

Procede permettant d'ameliorer l'adherence des lignes conductrices metalliques formees sur une couche de polyimide

Info

Publication number
FR2363192A1
FR2363192A1 FR7720731A FR7720731A FR2363192A1 FR 2363192 A1 FR2363192 A1 FR 2363192A1 FR 7720731 A FR7720731 A FR 7720731A FR 7720731 A FR7720731 A FR 7720731A FR 2363192 A1 FR2363192 A1 FR 2363192A1
Authority
FR
France
Prior art keywords
adhesion
layer
polyimide layer
improving
conductive lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7720731A
Other languages
English (en)
Other versions
FR2363192B1 (fr
Inventor
Dieter Bahrle
Peter Frasch
Wilfried Konig
Friedrich Schwerdt
Ursula Thelen
Theodor Vogtmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2363192A1 publication Critical patent/FR2363192A1/fr
Application granted granted Critical
Publication of FR2363192B1 publication Critical patent/FR2363192B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

Procédé permettant d'améliorer l'adhérence des lignes conductrices métalliques formées sur une couche de polyimide. L'adhérence d'une ligne conductrice métallique 7 sur une couche de polyimide est améliorée. Cette couche 5 de polyimide est obtenue par cuisson d'une couche formée à partir d'une solution d'acide polyaminocarboxylique dans un solvant. Le procédé comprend une première étape de cuisson effectuée avant le dépôt par vaporisation du film métallique 7 et une seconde cuisson après. Dans la première étape, la cuisson est réalisée en chauffant la couche 5 à approximativement 200 degrés C et 275 degrés C pendant une période de 20 et 30 minutes respectivement. Dans la seconde étape, la cuisson finale est réalisée en chauffant la couche 5 à 350 degrés C, ce qui assure la formation du polyimide. La présente invention s'applique de façon générale à la fabrication des circuits intégrés à semi-conducteurs.
FR7720731A 1976-08-27 1977-06-30 Procede permettant d'ameliorer l'adherence des lignes conductrices metalliques formees sur une couche de polyimide Granted FR2363192A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2638799A DE2638799C3 (de) 1976-08-27 1976-08-27 Verfahren zur Verbesserung der Haftung von metallischen Leiterzügen auf Polyimidschichten in integrierten Schaltungen

Publications (2)

Publication Number Publication Date
FR2363192A1 true FR2363192A1 (fr) 1978-03-24
FR2363192B1 FR2363192B1 (fr) 1980-02-08

Family

ID=5986587

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7720731A Granted FR2363192A1 (fr) 1976-08-27 1977-06-30 Procede permettant d'ameliorer l'adherence des lignes conductrices metalliques formees sur une couche de polyimide

Country Status (4)

Country Link
US (1) US4152195A (fr)
JP (1) JPS5341190A (fr)
DE (1) DE2638799C3 (fr)
FR (1) FR2363192A1 (fr)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850417B2 (ja) * 1979-07-31 1983-11-10 富士通株式会社 半導体装置の製造方法
US4356629A (en) * 1980-04-21 1982-11-02 Exploration Logging, Inc. Method of making well logging apparatus
US4494072A (en) * 1980-04-21 1985-01-15 Exploration Logging, Inc. Well logging apparatus with replaceable sensor carrying insulating sleeve disposed in rotation restrained position around a drill string
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
JPS57139996A (en) * 1981-02-24 1982-08-30 Nippon Electric Co Hybrid multilayer circuit board
JPS57154857A (en) * 1981-03-20 1982-09-24 Hitachi Ltd Semiconductor integrated circuit device
JPS57188896A (en) * 1981-05-15 1982-11-19 Nippon Electric Co Multilayer circuit board
JPS57188897A (en) * 1981-05-15 1982-11-19 Nippon Electric Co Multilayer circuit board
JPS57193051A (en) * 1981-05-25 1982-11-27 Nec Corp Multilayer circuit board
US4423547A (en) * 1981-06-01 1984-01-03 International Business Machines Corporation Method for forming dense multilevel interconnection metallurgy for semiconductor devices
JPS57201098A (en) * 1981-06-04 1982-12-09 Nippon Electric Co Integrated circuit mounting unit
US4353778A (en) * 1981-09-04 1982-10-12 International Business Machines Corporation Method of etching polyimide
GB2119521B (en) * 1981-10-01 1986-02-05 Exploration Logging Inc Well logging apparatus and method for making same
US4656314A (en) * 1982-02-08 1987-04-07 Industrial Science Associates Printed circuit
US4401686A (en) * 1982-02-08 1983-08-30 Raymond Iannetta Printed circuit and method of forming same
US4604799A (en) * 1982-09-03 1986-08-12 John Fluke Mfg. Co., Inc. Method of making molded circuit board
FR2545535B1 (fr) * 1983-05-06 1988-04-08 Geoservices Dispositif pour transmettre en surface les signaux d'un emetteur situe a grande profondeur
US4451326A (en) * 1983-09-07 1984-05-29 Advanced Micro Devices, Inc. Method for interconnecting metallic layers
US4720401A (en) * 1985-01-11 1988-01-19 International Business Machines Corporation Enhanced adhesion between metals and polymers
JPS61168679U (fr) * 1985-04-09 1986-10-20
US4908094A (en) * 1986-04-14 1990-03-13 International Business Machines Corporation Method for laminating organic materials via surface modification
US4711791A (en) * 1986-08-04 1987-12-08 The Boc Group, Inc. Method of making a flexible microcircuit
JPH0828361B2 (ja) * 1987-05-21 1996-03-21 日本電気株式会社 半導体装置の製造方法
US4827326A (en) * 1987-11-02 1989-05-02 Motorola, Inc. Integrated circuit having polyimide/metal passivation layer and method of manufacture using metal lift-off
US5104734A (en) * 1988-06-03 1992-04-14 International Business Machines Corporation Method for improving adhesion between a polyimide layer and a metal and the article obtained
US4975327A (en) 1989-07-11 1990-12-04 Minnesota Mining And Manufacturing Company Polyimide substrate having a textured surface and metallizing such a substrate
US5137751A (en) * 1990-03-09 1992-08-11 Amoco Corporation Process for making thick multilayers of polyimide
DE69127279T2 (de) * 1990-05-04 1998-03-19 Battelle Memorial Institute Bildung eines dünnen keramischen oxidfilms durch niederschlagung auf modifizierten polymeroberflächen
US5194928A (en) * 1991-01-14 1993-03-16 International Business Machines Corporation Passivation of metal in metal/polyimide structure
US5114754A (en) * 1991-01-14 1992-05-19 International Business Machines Corporation Passivation of metal in metal/polyimide structures
US5183692A (en) * 1991-07-01 1993-02-02 Motorola, Inc. Polyimide coating having electroless metal plate
US5397741A (en) * 1993-03-29 1995-03-14 International Business Machines Corporation Process for metallized vias in polyimide
US6099939A (en) * 1995-04-13 2000-08-08 International Business Machines Corporation Enhanced adhesion between a vapor deposited metal and an organic polymer surface exhibiting tailored morphology
JPH0948864A (ja) * 1995-08-03 1997-02-18 Kanegafuchi Chem Ind Co Ltd ポリイミドフィルムの接着性改善方法及び接着性を改善したポリイミドフィルム
US6171714B1 (en) 1996-04-18 2001-01-09 Gould Electronics Inc. Adhesiveless flexible laminate and process for making adhesiveless flexible laminate
US6141870A (en) 1997-08-04 2000-11-07 Peter K. Trzyna Method for making electrical device
US6355304B1 (en) 1998-06-02 2002-03-12 Summit Coating Technologies, Llc. Adhesion promotion
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
CN100397959C (zh) * 2003-05-06 2008-06-25 三菱瓦斯化学株式会社 贴金属层合物
TW201005975A (en) * 2008-03-14 2010-02-01 Dow Corning Method of forming a photovoltaic cell module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1580665A (fr) * 1967-09-15 1969-09-05
US3801880A (en) * 1971-09-09 1974-04-02 Hitachi Ltd Multilayer interconnected structure for semiconductor integrated circuit and process for manufacturing the same
US3820994A (en) * 1972-06-07 1974-06-28 Westinghouse Electric Corp Penetration of polyimide films
FR2245422A1 (fr) * 1973-08-24 1975-04-25 Ibm

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3179634A (en) * 1962-01-26 1965-04-20 Du Pont Aromatic polyimides and the process for preparing them
JPS5173570A (ja) * 1974-12-23 1976-06-25 Kyoshi Okabayashi Purasuchitsukukizaimenjoheno kagakudometsukino mitsuchakukashorihoho
US3976810A (en) * 1975-02-26 1976-08-24 E. I. Du Pont De Nemours And Company Process for anion removal from orthophosphate coatings

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1580665A (fr) * 1967-09-15 1969-09-05
US3801880A (en) * 1971-09-09 1974-04-02 Hitachi Ltd Multilayer interconnected structure for semiconductor integrated circuit and process for manufacturing the same
US3820994A (en) * 1972-06-07 1974-06-28 Westinghouse Electric Corp Penetration of polyimide films
FR2245422A1 (fr) * 1973-08-24 1975-04-25 Ibm

Also Published As

Publication number Publication date
DE2638799C3 (de) 1981-12-03
DE2638799B2 (de) 1980-10-23
DE2638799A1 (de) 1978-03-02
FR2363192B1 (fr) 1980-02-08
US4152195A (en) 1979-05-01
JPS5341190A (en) 1978-04-14

Similar Documents

Publication Publication Date Title
FR2363192A1 (fr) Procede permettant d'ameliorer l'adherence des lignes conductrices metalliques formees sur une couche de polyimide
US2443119A (en) Process of producing predetermined metallic patterns
FR2332338A1 (fr) Procede pour revetir par depot ionique reactif un substrat isolant d'une couche d'oxyde d'au moins un metal
ES450758A1 (es) Procedimiento para la fabricacion de dispositivos de memoriade semiconductores.
KR850002172A (ko) 반도체장치 제조방법
US3708403A (en) Self-aligning electroplating mask
US3556951A (en) Method of forming leads on semiconductor devices
JPS56100451A (en) Manufacture of electrode of semiconductor device
FR2380636A1 (fr) Procede pour former une couche electriquement isolante sur un substrat
US3514379A (en) Electrodeposition of metals on selected areas of a base
US3971428A (en) Method for making beam leads
US3531340A (en) Method for mounting thin beryllium windows
US3634202A (en) Process for the production of thick film conductors and circuits incorporating such conductors
US3607148A (en) Solder preforms on a semiconductor wafer
US3702808A (en) Process for the production of star tracklng reticles
US3799793A (en) Formation of star tracking reticles
US3432922A (en) Method for producing resistances of the multi-layer type
JPS6227386B2 (fr)
JPS6318631A (ja) パタン形成法
SU360009A1 (ru) Способ получени рельефных изображений
US3759672A (en) Star tracking reticles
SU715362A1 (ru) Фотошаблон
JPS5856422A (ja) パタ−ン形成法
CH636238B (de) Verfahren zur herstellung von uhrteilen.
JPS5885547A (ja) 導電パタ−ンの形成方法

Legal Events

Date Code Title Description
ST Notification of lapse