ES450758A1 - Procedimiento para la fabricacion de dispositivos de memoriade semiconductores. - Google Patents
Procedimiento para la fabricacion de dispositivos de memoriade semiconductores.Info
- Publication number
- ES450758A1 ES450758A1 ES450758A ES450758A ES450758A1 ES 450758 A1 ES450758 A1 ES 450758A1 ES 450758 A ES450758 A ES 450758A ES 450758 A ES450758 A ES 450758A ES 450758 A1 ES450758 A1 ES 450758A1
- Authority
- ES
- Spain
- Prior art keywords
- layer
- semiconductor memory
- insulator
- memory apparatus
- molecules
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 4
- 239000012212 insulator Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/605,312 US3964085A (en) | 1975-08-18 | 1975-08-18 | Method for fabricating multilayer insulator-semiconductor memory apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES450758A1 true ES450758A1 (es) | 1977-08-16 |
Family
ID=24423144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES450758A Expired ES450758A1 (es) | 1975-08-18 | 1976-08-17 | Procedimiento para la fabricacion de dispositivos de memoriade semiconductores. |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3964085A (es) |
| JP (1) | JPS6032973B2 (es) |
| BE (1) | BE845154A (es) |
| CA (1) | CA1052009A (es) |
| DE (1) | DE2636961C2 (es) |
| ES (1) | ES450758A1 (es) |
| FR (1) | FR2321768A2 (es) |
| GB (1) | GB1552161A (es) |
| IT (1) | IT1071194B (es) |
| NL (1) | NL7608923A (es) |
| SE (1) | SE412818B (es) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4329016A (en) * | 1978-06-01 | 1982-05-11 | Hughes Aircraft Company | Optical waveguide formed by diffusing metal into substrate |
| US4206251A (en) * | 1978-06-01 | 1980-06-03 | Hughes Aircraft Company | Method for diffusing metals into substrates |
| US6391801B1 (en) | 1999-09-01 | 2002-05-21 | Micron Technology, Inc. | Method of forming a layer comprising tungsten oxide |
| DE19955602A1 (de) * | 1999-11-18 | 2001-05-31 | Infineon Technologies Ag | Nichtflüchtige Halbleiter- Speicherzelle sowie Verfahren zu deren Herstellung |
| US6953730B2 (en) | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
| US6804136B2 (en) * | 2002-06-21 | 2004-10-12 | Micron Technology, Inc. | Write once read only memory employing charge trapping in insulators |
| US6996009B2 (en) * | 2002-06-21 | 2006-02-07 | Micron Technology, Inc. | NOR flash memory cell with high storage density |
| US6970370B2 (en) * | 2002-06-21 | 2005-11-29 | Micron Technology, Inc. | Ferroelectric write once read only memory for archival storage |
| US7193893B2 (en) | 2002-06-21 | 2007-03-20 | Micron Technology, Inc. | Write once read only memory employing floating gates |
| US7154140B2 (en) * | 2002-06-21 | 2006-12-26 | Micron Technology, Inc. | Write once read only memory with large work function floating gates |
| US6888739B2 (en) * | 2002-06-21 | 2005-05-03 | Micron Technology Inc. | Nanocrystal write once read only memory for archival storage |
| US7847344B2 (en) * | 2002-07-08 | 2010-12-07 | Micron Technology, Inc. | Memory utilizing oxide-nitride nanolaminates |
| US7221017B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
| US7221586B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
| US6865407B2 (en) * | 2002-07-11 | 2005-03-08 | Optical Sensors, Inc. | Calibration technique for non-invasive medical devices |
| US6917078B2 (en) * | 2002-08-30 | 2005-07-12 | Micron Technology Inc. | One transistor SOI non-volatile random access memory cell |
| US6888200B2 (en) * | 2002-08-30 | 2005-05-03 | Micron Technology Inc. | One transistor SOI non-volatile random access memory cell |
| US6903969B2 (en) * | 2002-08-30 | 2005-06-07 | Micron Technology Inc. | One-device non-volatile random access memory cell |
| US8125003B2 (en) * | 2003-07-02 | 2012-02-28 | Micron Technology, Inc. | High-performance one-transistor memory cell |
| US7145186B2 (en) | 2004-08-24 | 2006-12-05 | Micron Technology, Inc. | Memory cell with trenched gated thyristor |
| US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
| US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
| JP2013197121A (ja) * | 2012-03-15 | 2013-09-30 | Toshiba Corp | 半導体装置及びその製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4844581B1 (es) * | 1969-03-15 | 1973-12-25 | ||
| US3877054A (en) * | 1973-03-01 | 1975-04-08 | Bell Telephone Labor Inc | Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor |
-
1975
- 1975-08-18 US US05/605,312 patent/US3964085A/en not_active Expired - Lifetime
-
1976
- 1976-08-06 SE SE7608839A patent/SE412818B/xx not_active IP Right Cessation
- 1976-08-10 CA CA258,791A patent/CA1052009A/en not_active Expired
- 1976-08-11 NL NL7608923A patent/NL7608923A/xx not_active Application Discontinuation
- 1976-08-13 BE BE169778A patent/BE845154A/xx not_active IP Right Cessation
- 1976-08-16 FR FR7624909A patent/FR2321768A2/fr active Granted
- 1976-08-16 JP JP51097145A patent/JPS6032973B2/ja not_active Expired
- 1976-08-17 DE DE2636961A patent/DE2636961C2/de not_active Expired
- 1976-08-17 ES ES450758A patent/ES450758A1/es not_active Expired
- 1976-08-17 IT IT69038/76A patent/IT1071194B/it active
- 1976-08-17 GB GB34143/76A patent/GB1552161A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2321768B2 (es) | 1980-04-30 |
| CA1052009A (en) | 1979-04-03 |
| SE7608839L (sv) | 1977-02-19 |
| SE412818B (sv) | 1980-03-17 |
| DE2636961C2 (de) | 1984-09-13 |
| NL7608923A (nl) | 1977-02-22 |
| US3964085A (en) | 1976-06-15 |
| GB1552161A (en) | 1979-09-12 |
| DE2636961A1 (de) | 1977-03-03 |
| JPS5224473A (en) | 1977-02-23 |
| BE845154A (fr) | 1976-12-01 |
| IT1071194B (it) | 1985-04-02 |
| JPS6032973B2 (ja) | 1985-07-31 |
| FR2321768A2 (fr) | 1977-03-18 |
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