Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
  • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
  • H01L29/401—Multistep manufacturing processes
  • H01L29/4011—Multistep manufacturing processes for data storage electrodes
  • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching

Applications Claiming Priority (1)

Publications (1)

Family

ID=24423144

Family Applications (1)

Country Status (11)

Families Citing this family (23)

Family Cites Families (2)

• 1975
  • 1975-08-18 US US05/605,312 patent/US3964085A/en not_active Expired - Lifetime
• 1976
  • 1976-08-06 SE SE7608839A patent/SE412818B/xx not_active IP Right Cessation
  • 1976-08-10 CA CA258,791A patent/CA1052009A/en not_active Expired
  • 1976-08-11 NL NL7608923A patent/NL7608923A/nl not_active Application Discontinuation
  • 1976-08-13 BE BE169778A patent/BE845154A/xx not_active IP Right Cessation
  • 1976-08-16 JP JP51097145A patent/JPS6032973B2/ja not_active Expired
  • 1976-08-16 FR FR7624909A patent/FR2321768A2/fr active Granted
  • 1976-08-17 ES ES450758A patent/ES450758A1/es not_active Expired
  • 1976-08-17 GB GB34143/76A patent/GB1552161A/en not_active Expired
  • 1976-08-17 DE DE2636961A patent/DE2636961C2/de not_active Expired
  • 1976-08-17 IT IT69038/76A patent/IT1071194B/it active

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