SE7608839L - Halvledareanordning - Google Patents
HalvledareanordningInfo
- Publication number
- SE7608839L SE7608839L SE7608839A SE7608839A SE7608839L SE 7608839 L SE7608839 L SE 7608839L SE 7608839 A SE7608839 A SE 7608839A SE 7608839 A SE7608839 A SE 7608839A SE 7608839 L SE7608839 L SE 7608839L
- Authority
- SE
- Sweden
- Prior art keywords
- dopant
- fabricating
- oxide
- tungsten
- molybdenum
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000002019 doping agent Substances 0.000 abstract 3
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 abstract 2
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/605,312 US3964085A (en) | 1975-08-18 | 1975-08-18 | Method for fabricating multilayer insulator-semiconductor memory apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7608839L true SE7608839L (sv) | 1977-02-19 |
| SE412818B SE412818B (sv) | 1980-03-17 |
Family
ID=24423144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7608839A SE412818B (sv) | 1975-08-18 | 1976-08-06 | Sett att framstella en halvdedarminnesanordning |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3964085A (sv) |
| JP (1) | JPS6032973B2 (sv) |
| BE (1) | BE845154A (sv) |
| CA (1) | CA1052009A (sv) |
| DE (1) | DE2636961C2 (sv) |
| ES (1) | ES450758A1 (sv) |
| FR (1) | FR2321768A2 (sv) |
| GB (1) | GB1552161A (sv) |
| IT (1) | IT1071194B (sv) |
| NL (1) | NL7608923A (sv) |
| SE (1) | SE412818B (sv) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4329016A (en) * | 1978-06-01 | 1982-05-11 | Hughes Aircraft Company | Optical waveguide formed by diffusing metal into substrate |
| US4206251A (en) * | 1978-06-01 | 1980-06-03 | Hughes Aircraft Company | Method for diffusing metals into substrates |
| US6391801B1 (en) | 1999-09-01 | 2002-05-21 | Micron Technology, Inc. | Method of forming a layer comprising tungsten oxide |
| DE19955602A1 (de) * | 1999-11-18 | 2001-05-31 | Infineon Technologies Ag | Nichtflüchtige Halbleiter- Speicherzelle sowie Verfahren zu deren Herstellung |
| US6953730B2 (en) | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
| US6804136B2 (en) * | 2002-06-21 | 2004-10-12 | Micron Technology, Inc. | Write once read only memory employing charge trapping in insulators |
| US6996009B2 (en) * | 2002-06-21 | 2006-02-07 | Micron Technology, Inc. | NOR flash memory cell with high storage density |
| US6888739B2 (en) * | 2002-06-21 | 2005-05-03 | Micron Technology Inc. | Nanocrystal write once read only memory for archival storage |
| US6970370B2 (en) * | 2002-06-21 | 2005-11-29 | Micron Technology, Inc. | Ferroelectric write once read only memory for archival storage |
| US7154140B2 (en) * | 2002-06-21 | 2006-12-26 | Micron Technology, Inc. | Write once read only memory with large work function floating gates |
| US7193893B2 (en) | 2002-06-21 | 2007-03-20 | Micron Technology, Inc. | Write once read only memory employing floating gates |
| US7221586B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
| US7221017B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
| US7847344B2 (en) * | 2002-07-08 | 2010-12-07 | Micron Technology, Inc. | Memory utilizing oxide-nitride nanolaminates |
| US6865407B2 (en) * | 2002-07-11 | 2005-03-08 | Optical Sensors, Inc. | Calibration technique for non-invasive medical devices |
| US6917078B2 (en) * | 2002-08-30 | 2005-07-12 | Micron Technology Inc. | One transistor SOI non-volatile random access memory cell |
| US6888200B2 (en) * | 2002-08-30 | 2005-05-03 | Micron Technology Inc. | One transistor SOI non-volatile random access memory cell |
| US6903969B2 (en) * | 2002-08-30 | 2005-06-07 | Micron Technology Inc. | One-device non-volatile random access memory cell |
| US8125003B2 (en) * | 2003-07-02 | 2012-02-28 | Micron Technology, Inc. | High-performance one-transistor memory cell |
| US7145186B2 (en) | 2004-08-24 | 2006-12-05 | Micron Technology, Inc. | Memory cell with trenched gated thyristor |
| US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
| US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
| JP2013197121A (ja) * | 2012-03-15 | 2013-09-30 | Toshiba Corp | 半導体装置及びその製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4844581B1 (sv) * | 1969-03-15 | 1973-12-25 | ||
| US3877054A (en) * | 1973-03-01 | 1975-04-08 | Bell Telephone Labor Inc | Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor |
-
1975
- 1975-08-18 US US05/605,312 patent/US3964085A/en not_active Expired - Lifetime
-
1976
- 1976-08-06 SE SE7608839A patent/SE412818B/sv not_active IP Right Cessation
- 1976-08-10 CA CA258,791A patent/CA1052009A/en not_active Expired
- 1976-08-11 NL NL7608923A patent/NL7608923A/xx not_active Application Discontinuation
- 1976-08-13 BE BE169778A patent/BE845154A/xx not_active IP Right Cessation
- 1976-08-16 JP JP51097145A patent/JPS6032973B2/ja not_active Expired
- 1976-08-16 FR FR7624909A patent/FR2321768A2/fr active Granted
- 1976-08-17 DE DE2636961A patent/DE2636961C2/de not_active Expired
- 1976-08-17 ES ES450758A patent/ES450758A1/es not_active Expired
- 1976-08-17 IT IT69038/76A patent/IT1071194B/it active
- 1976-08-17 GB GB34143/76A patent/GB1552161A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE412818B (sv) | 1980-03-17 |
| FR2321768A2 (fr) | 1977-03-18 |
| JPS6032973B2 (ja) | 1985-07-31 |
| NL7608923A (nl) | 1977-02-22 |
| BE845154A (fr) | 1976-12-01 |
| CA1052009A (en) | 1979-04-03 |
| FR2321768B2 (sv) | 1980-04-30 |
| JPS5224473A (en) | 1977-02-23 |
| ES450758A1 (es) | 1977-08-16 |
| GB1552161A (en) | 1979-09-12 |
| DE2636961A1 (de) | 1977-03-03 |
| US3964085A (en) | 1976-06-15 |
| DE2636961C2 (de) | 1984-09-13 |
| IT1071194B (it) | 1985-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SE7608839L (sv) | Halvledareanordning | |
| GB889729A (en) | Improvements in and relating to thin film superconductors | |
| JPS5380966A (en) | Manufacture of electrode fdr semiconductor device | |
| JPS5328382A (en) | Production method of semiconductor devi ce | |
| JPS5331964A (en) | Production of semiconductor substrates | |
| GB1513640A (en) | Process for manufacturing a hybrid oxide | |
| JPS5649554A (en) | Manufacture of semiconductor memory | |
| GB1125157A (en) | Improvements in or relating to materials for use as ohmic contacts | |
| JPS5211787A (en) | Method of manufacturing schottky barrier solar battery | |
| JPS531471A (en) | Manufacture for semiconductor device | |
| JPS52109369A (en) | Manufacture of semiconductor device | |
| JPS52124860A (en) | Electrode formation method for semiconductor devices | |
| JPS5321571A (en) | Glass covered semiconductor device and its production | |
| JPS5211765A (en) | Method of manufacturing semiconductor device | |
| GB1133403A (en) | Deposition of metal layers on insulators | |
| JPS5329668A (en) | Production of semiconductor device | |
| JPS5373976A (en) | Manufacture for schottky barrier type semiconductor device | |
| JPS52141183A (en) | Production of semiconductor devices | |
| JPS5376752A (en) | Production of semionductor device | |
| JPS5248467A (en) | Process for production of semiconductor device | |
| JPS5287373A (en) | Production of semiconductor device | |
| JPS536582A (en) | Production of constant voltage semiconductor device | |
| JPS5351964A (en) | Selective growth method for semiconductor crystal | |
| JPS52123880A (en) | Semiconductor device and is production | |
| JPS543470A (en) | Etching method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
Ref document number: 7608839-2 Effective date: 19890911 Format of ref document f/p: F |