SE412818B - Sett att framstella en halvdedarminnesanordning - Google Patents
Sett att framstella en halvdedarminnesanordningInfo
- Publication number
- SE412818B SE412818B SE7608839A SE7608839A SE412818B SE 412818 B SE412818 B SE 412818B SE 7608839 A SE7608839 A SE 7608839A SE 7608839 A SE7608839 A SE 7608839A SE 412818 B SE412818 B SE 412818B
- Authority
- SE
- Sweden
- Prior art keywords
- semi
- make
- installation device
- installation
- Prior art date
Links
- 238000009434 installation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/605,312 US3964085A (en) | 1975-08-18 | 1975-08-18 | Method for fabricating multilayer insulator-semiconductor memory apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7608839L SE7608839L (sv) | 1977-02-19 |
SE412818B true SE412818B (sv) | 1980-03-17 |
Family
ID=24423144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7608839A SE412818B (sv) | 1975-08-18 | 1976-08-06 | Sett att framstella en halvdedarminnesanordning |
Country Status (11)
Country | Link |
---|---|
US (1) | US3964085A (sv) |
JP (1) | JPS6032973B2 (sv) |
BE (1) | BE845154A (sv) |
CA (1) | CA1052009A (sv) |
DE (1) | DE2636961C2 (sv) |
ES (1) | ES450758A1 (sv) |
FR (1) | FR2321768A2 (sv) |
GB (1) | GB1552161A (sv) |
IT (1) | IT1071194B (sv) |
NL (1) | NL7608923A (sv) |
SE (1) | SE412818B (sv) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4206251A (en) * | 1978-06-01 | 1980-06-03 | Hughes Aircraft Company | Method for diffusing metals into substrates |
US4329016A (en) * | 1978-06-01 | 1982-05-11 | Hughes Aircraft Company | Optical waveguide formed by diffusing metal into substrate |
US6391801B1 (en) | 1999-09-01 | 2002-05-21 | Micron Technology, Inc. | Method of forming a layer comprising tungsten oxide |
DE19955602A1 (de) * | 1999-11-18 | 2001-05-31 | Infineon Technologies Ag | Nichtflüchtige Halbleiter- Speicherzelle sowie Verfahren zu deren Herstellung |
US6953730B2 (en) | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
US6888739B2 (en) | 2002-06-21 | 2005-05-03 | Micron Technology Inc. | Nanocrystal write once read only memory for archival storage |
US7193893B2 (en) | 2002-06-21 | 2007-03-20 | Micron Technology, Inc. | Write once read only memory employing floating gates |
US6996009B2 (en) * | 2002-06-21 | 2006-02-07 | Micron Technology, Inc. | NOR flash memory cell with high storage density |
US6804136B2 (en) * | 2002-06-21 | 2004-10-12 | Micron Technology, Inc. | Write once read only memory employing charge trapping in insulators |
US6970370B2 (en) * | 2002-06-21 | 2005-11-29 | Micron Technology, Inc. | Ferroelectric write once read only memory for archival storage |
US7154140B2 (en) * | 2002-06-21 | 2006-12-26 | Micron Technology, Inc. | Write once read only memory with large work function floating gates |
US7847344B2 (en) * | 2002-07-08 | 2010-12-07 | Micron Technology, Inc. | Memory utilizing oxide-nitride nanolaminates |
US7221586B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US7221017B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
US6865407B2 (en) * | 2002-07-11 | 2005-03-08 | Optical Sensors, Inc. | Calibration technique for non-invasive medical devices |
US6903969B2 (en) * | 2002-08-30 | 2005-06-07 | Micron Technology Inc. | One-device non-volatile random access memory cell |
US6917078B2 (en) * | 2002-08-30 | 2005-07-12 | Micron Technology Inc. | One transistor SOI non-volatile random access memory cell |
US6888200B2 (en) * | 2002-08-30 | 2005-05-03 | Micron Technology Inc. | One transistor SOI non-volatile random access memory cell |
US8125003B2 (en) * | 2003-07-02 | 2012-02-28 | Micron Technology, Inc. | High-performance one-transistor memory cell |
US7145186B2 (en) | 2004-08-24 | 2006-12-05 | Micron Technology, Inc. | Memory cell with trenched gated thyristor |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
JP2013197121A (ja) * | 2012-03-15 | 2013-09-30 | Toshiba Corp | 半導体装置及びその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4844581B1 (sv) * | 1969-03-15 | 1973-12-25 | ||
US3877054A (en) * | 1973-03-01 | 1975-04-08 | Bell Telephone Labor Inc | Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor |
-
1975
- 1975-08-18 US US05/605,312 patent/US3964085A/en not_active Expired - Lifetime
-
1976
- 1976-08-06 SE SE7608839A patent/SE412818B/sv not_active IP Right Cessation
- 1976-08-10 CA CA258,791A patent/CA1052009A/en not_active Expired
- 1976-08-11 NL NL7608923A patent/NL7608923A/xx not_active Application Discontinuation
- 1976-08-13 BE BE169778A patent/BE845154A/xx not_active IP Right Cessation
- 1976-08-16 JP JP51097145A patent/JPS6032973B2/ja not_active Expired
- 1976-08-16 FR FR7624909A patent/FR2321768A2/fr active Granted
- 1976-08-17 GB GB34143/76A patent/GB1552161A/en not_active Expired
- 1976-08-17 ES ES450758A patent/ES450758A1/es not_active Expired
- 1976-08-17 IT IT69038/76A patent/IT1071194B/it active
- 1976-08-17 DE DE2636961A patent/DE2636961C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1552161A (en) | 1979-09-12 |
CA1052009A (en) | 1979-04-03 |
FR2321768B2 (sv) | 1980-04-30 |
BE845154A (fr) | 1976-12-01 |
JPS6032973B2 (ja) | 1985-07-31 |
IT1071194B (it) | 1985-04-02 |
NL7608923A (nl) | 1977-02-22 |
FR2321768A2 (fr) | 1977-03-18 |
DE2636961C2 (de) | 1984-09-13 |
ES450758A1 (es) | 1977-08-16 |
JPS5224473A (en) | 1977-02-23 |
DE2636961A1 (de) | 1977-03-03 |
US3964085A (en) | 1976-06-15 |
SE7608839L (sv) | 1977-02-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |
Ref document number: 7608839-2 Effective date: 19890911 Format of ref document f/p: F |