NL7601576A - Werkwijze voor het maken van een halfgeleider- -inrichting. - Google Patents
Werkwijze voor het maken van een halfgeleider- -inrichting.Info
- Publication number
- NL7601576A NL7601576A NL7601576A NL7601576A NL7601576A NL 7601576 A NL7601576 A NL 7601576A NL 7601576 A NL7601576 A NL 7601576A NL 7601576 A NL7601576 A NL 7601576A NL 7601576 A NL7601576 A NL 7601576A
- Authority
- NL
- Netherlands
- Prior art keywords
- making
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/945—Special, e.g. metal
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50019353A JPS5193874A (en) | 1975-02-15 | 1975-02-15 | Handotaisochino seizohoho |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7601576A true NL7601576A (nl) | 1976-08-17 |
NL186048B NL186048B (nl) | 1990-04-02 |
NL186048C NL186048C (nl) | 1990-09-03 |
Family
ID=11997006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7601576,A NL186048C (nl) | 1975-02-15 | 1976-02-16 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met twee passiveringslagen. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4062707A (nl) |
JP (1) | JPS5193874A (nl) |
AU (1) | AU499549B2 (nl) |
CA (1) | CA1059243A (nl) |
DE (1) | DE2605830C3 (nl) |
FR (1) | FR2301092A1 (nl) |
GB (1) | GB1513332A (nl) |
NL (1) | NL186048C (nl) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4161744A (en) * | 1977-05-23 | 1979-07-17 | Varo Semiconductor, Inc. | Passivated semiconductor device and method of making same |
US4134125A (en) * | 1977-07-20 | 1979-01-09 | Bell Telephone Laboratories, Incorporated | Passivation of metallized semiconductor substrates |
US4149307A (en) * | 1977-12-28 | 1979-04-17 | Hughes Aircraft Company | Process for fabricating insulated-gate field-effect transistors with self-aligned contacts |
US4148133A (en) * | 1978-05-08 | 1979-04-10 | Sperry Rand Corporation | Polysilicon mask for etching thick insulator |
US4174252A (en) * | 1978-07-26 | 1979-11-13 | Rca Corporation | Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes |
US4219379A (en) * | 1978-09-25 | 1980-08-26 | Mostek Corporation | Method for making a semiconductor device |
US4242697A (en) * | 1979-03-14 | 1980-12-30 | Bell Telephone Laboratories, Incorporated | Dielectrically isolated high voltage semiconductor devices |
JPS5640269A (en) * | 1979-09-11 | 1981-04-16 | Toshiba Corp | Preparation of semiconductor device |
US4317690A (en) * | 1980-06-18 | 1982-03-02 | Signetics Corporation | Self-aligned double polysilicon MOS fabrication |
JPS58100441A (ja) * | 1981-12-10 | 1983-06-15 | Toshiba Corp | 半導体装置の製造方法 |
US4894703A (en) * | 1982-03-19 | 1990-01-16 | American Telephone And Telegraph Company, At&T Bell Laboratories | Restricted contact, planar photodiode |
US4990989A (en) * | 1982-03-19 | 1991-02-05 | At&T Bell Laboratories | Restricted contact planar photodiode |
US4634474A (en) * | 1984-10-09 | 1987-01-06 | At&T Bell Laboratories | Coating of III-V and II-VI compound semiconductors |
JPS61222172A (ja) * | 1985-03-15 | 1986-10-02 | Sharp Corp | Mosfetのゲ−ト絶縁膜形成方法 |
US4714518A (en) * | 1987-01-14 | 1987-12-22 | Polaroid Corporation | Dual layer encapsulation coating for III-V semiconductor compounds |
US5460983A (en) * | 1993-07-30 | 1995-10-24 | Sgs-Thomson Microelectronics, Inc. | Method for forming isolated intra-polycrystalline silicon structures |
DE4424420A1 (de) * | 1994-07-12 | 1996-01-18 | Telefunken Microelectron | Kontaktierungsprozeß |
US6068928A (en) * | 1998-02-25 | 2000-05-30 | Siemens Aktiengesellschaft | Method for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the method |
DE69923436T2 (de) * | 1998-03-06 | 2006-01-05 | Asm America Inc., Phoenix | Verfahren zum beschichten von silizium mit hoher kantenabdeckung |
DE60005541T2 (de) * | 2000-12-20 | 2004-07-01 | Stmicroelectronics S.R.L., Agrate Brianza | Verfahren zur Kontrollierung von Zwischenoxyd bei einer monokristallinischen/polykristallinischen Silizium-Zwischenschicht |
US9443730B2 (en) | 2014-07-18 | 2016-09-13 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US9837271B2 (en) | 2014-07-18 | 2017-12-05 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US10460932B2 (en) | 2017-03-31 | 2019-10-29 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
KR102591247B1 (ko) * | 2023-04-13 | 2023-10-19 | 삼성엔지니어링 주식회사 | 한쌍의 마스트를 이용한 대용량 건설용 리프트와 로드 셀을 이용한 건설용 리프트 장치 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2789258A (en) * | 1955-06-29 | 1957-04-16 | Raytheon Mfg Co | Intrinsic coatings for semiconductor junctions |
NL251064A (nl) * | 1955-11-04 | |||
GB1053046A (nl) * | 1963-02-25 | 1900-01-01 | ||
NL6504750A (nl) * | 1964-04-15 | 1965-10-18 | ||
GB1104935A (en) * | 1964-05-08 | 1968-03-06 | Standard Telephones Cables Ltd | Improvements in or relating to a method of forming a layer of an inorganic compound |
SE300472B (nl) * | 1965-03-31 | 1968-04-29 | Asea Ab | |
US3479237A (en) * | 1966-04-08 | 1969-11-18 | Bell Telephone Labor Inc | Etch masks on semiconductor surfaces |
US3422321A (en) * | 1966-06-20 | 1969-01-14 | Sperry Rand Corp | Oxygenated silicon nitride semiconductor devices and silane method for making same |
US3463715A (en) * | 1966-07-07 | 1969-08-26 | Trw Inc | Method of cathodically sputtering a layer of silicon having a reduced resistivity |
US3455020A (en) * | 1966-10-13 | 1969-07-15 | Rca Corp | Method of fabricating insulated-gate field-effect devices |
US3472689A (en) * | 1967-01-19 | 1969-10-14 | Rca Corp | Vapor deposition of silicon-nitrogen insulating coatings |
US3537921A (en) * | 1967-02-28 | 1970-11-03 | Motorola Inc | Selective hydrofluoric acid etching and subsequent processing |
DE1614455C3 (de) * | 1967-03-16 | 1979-07-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen einer teils aus Siliciumoxid, teils aus Siliciumnitrid bestehenden Schutzschicht an der Oberfläche eines Halbleiterkörpers |
US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
US3549411A (en) * | 1967-06-27 | 1970-12-22 | Texas Instruments Inc | Method of preparing silicon nitride films |
GB1244013A (en) * | 1967-10-13 | 1971-08-25 | Gen Electric | Fabrication of semiconductor devices |
GB1239852A (en) * | 1969-01-09 | 1971-07-21 | Ferranti Ltd | Improvements relating to semiconductor devices |
JPS497870B1 (nl) * | 1969-06-06 | 1974-02-22 | ||
JPS5314420B2 (nl) * | 1973-05-14 | 1978-05-17 | ||
JPS523277B2 (nl) * | 1973-05-19 | 1977-01-27 | ||
US3862852A (en) * | 1973-06-01 | 1975-01-28 | Fairchild Camera Instr Co | Method of obtaining high-quality thick films of polycrystalline silicone from dielectric isolation |
JPS532552B2 (nl) | 1974-03-30 | 1978-01-28 |
-
1975
- 1975-02-15 JP JP50019353A patent/JPS5193874A/ja active Pending
-
1976
- 1976-02-02 US US05/654,598 patent/US4062707A/en not_active Expired - Lifetime
- 1976-02-03 CA CA244,949A patent/CA1059243A/en not_active Expired
- 1976-02-05 GB GB4619/76A patent/GB1513332A/en not_active Expired
- 1976-02-05 AU AU10840/76A patent/AU499549B2/en not_active Expired
- 1976-02-13 DE DE2605830A patent/DE2605830C3/de not_active Expired
- 1976-02-13 FR FR7604063A patent/FR2301092A1/fr active Granted
- 1976-02-16 NL NLAANVRAGE7601576,A patent/NL186048C/nl not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2301092B1 (nl) | 1982-06-18 |
JPS5193874A (en) | 1976-08-17 |
DE2605830B2 (de) | 1980-11-06 |
DE2605830A1 (de) | 1976-09-02 |
AU1084076A (en) | 1977-08-11 |
NL186048B (nl) | 1990-04-02 |
NL186048C (nl) | 1990-09-03 |
US4062707A (en) | 1977-12-13 |
FR2301092A1 (fr) | 1976-09-10 |
DE2605830C3 (de) | 1983-01-05 |
AU499549B2 (en) | 1979-04-26 |
CA1059243A (en) | 1979-07-24 |
GB1513332A (en) | 1978-06-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 19950901 |