NL7609420A - Werkwijze voor de vervaardiging van een half-geleiderinrichting. - Google Patents

Werkwijze voor de vervaardiging van een half-geleiderinrichting.

Info

Publication number
NL7609420A
NL7609420A NL7609420A NL7609420A NL7609420A NL 7609420 A NL7609420 A NL 7609420A NL 7609420 A NL7609420 A NL 7609420A NL 7609420 A NL7609420 A NL 7609420A NL 7609420 A NL7609420 A NL 7609420A
Authority
NL
Netherlands
Prior art keywords
semi
procedure
manufacture
conductor device
conductor
Prior art date
Application number
NL7609420A
Other languages
English (en)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7609420A publication Critical patent/NL7609420A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
NL7609420A 1975-08-25 1976-08-24 Werkwijze voor de vervaardiging van een half-geleiderinrichting. NL7609420A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50102181A JPS5226182A (en) 1975-08-25 1975-08-25 Manufacturing method of semi-conductor unit

Publications (1)

Publication Number Publication Date
NL7609420A true NL7609420A (nl) 1977-03-01

Family

ID=14320497

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7609420A NL7609420A (nl) 1975-08-25 1976-08-24 Werkwijze voor de vervaardiging van een half-geleiderinrichting.

Country Status (3)

Country Link
US (1) US4073054A (nl)
JP (1) JPS5226182A (nl)
NL (1) NL7609420A (nl)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53148988A (en) * 1977-05-31 1978-12-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor substrate
JPS5541715A (en) * 1978-09-19 1980-03-24 Oki Electric Ind Co Ltd Production of semiconductor device
DE3072040D1 (en) * 1979-07-23 1987-11-05 Fujitsu Ltd Method of manufacturing a semiconductor device wherein first and second layers are formed
JPS5630737A (en) * 1979-08-21 1981-03-27 Seiko Epson Corp Semiconductor ic circuit
US4307180A (en) * 1980-08-22 1981-12-22 International Business Machines Corp. Process of forming recessed dielectric regions in a monocrystalline silicon substrate
EP0049400B1 (en) * 1980-09-22 1984-07-11 Kabushiki Kaisha Toshiba Method of smoothing an insulating layer formed on a semiconductor body
JPS57204135A (en) * 1981-06-10 1982-12-14 Toshiba Corp Manufacture of semiconductor device
US4389294A (en) * 1981-06-30 1983-06-21 International Business Machines Corporation Method for avoiding residue on a vertical walled mesa
US4385975A (en) * 1981-12-30 1983-05-31 International Business Machines Corp. Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate
JPS58210634A (ja) * 1982-05-31 1983-12-07 Toshiba Corp 半導体装置の製造方法
JPS58216436A (ja) * 1982-06-09 1983-12-16 Nec Corp 半導体装置の製造方法
JPS589337A (ja) * 1982-06-25 1983-01-19 Hitachi Ltd 半導体装置の製造方法
JPS598353A (ja) * 1982-07-07 1984-01-17 Nec Corp 半導体集積回路装置
JPS59124723A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 半導体装置の製造方法
US4539744A (en) * 1984-02-03 1985-09-10 Fairchild Camera & Instrument Corporation Semiconductor planarization process and structures made thereby
US4708767A (en) * 1984-10-05 1987-11-24 Signetics Corporation Method for providing a semiconductor device with planarized contacts
JPS61234046A (ja) * 1986-04-25 1986-10-18 Toshiba Corp 半導体装置の製造方法
US5049522A (en) * 1990-02-09 1991-09-17 Hughes Aircraft Company Semiconductive arrangement having dissimilar, laterally spaced layer structures, and process for fabricating the same
JPH07106412A (ja) * 1993-10-07 1995-04-21 Toshiba Corp 半導体装置およびその製造方法
US5719085A (en) * 1995-09-29 1998-02-17 Intel Corporation Shallow trench isolation technique
FR2829288A1 (fr) * 2001-09-06 2003-03-07 St Microelectronics Sa Structure de contact sur une region profonde formee dans un substrat semiconducteur
CN103855070A (zh) * 2012-11-29 2014-06-11 上海华虹宏力半导体制造有限公司 超低密度有源区的浅沟槽隔离平坦化的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3400309A (en) * 1965-10-18 1968-09-03 Ibm Monolithic silicon device containing dielectrically isolatng film of silicon carbide
US3892608A (en) * 1974-02-28 1975-07-01 Motorola Inc Method for filling grooves and moats used on semiconductor devices
US3998673A (en) * 1974-08-16 1976-12-21 Pel Chow Method for forming electrically-isolated regions in integrated circuits utilizing selective epitaxial growth

Also Published As

Publication number Publication date
US4073054A (en) 1978-02-14
JPS5226182A (en) 1977-02-26

Similar Documents

Publication Publication Date Title
NL7602960A (nl) Werkwijze ter vervaardiging van een halfgeleider- inrichting.
NL7601438A (nl) Werkwijze voor de vervaardiging van een rekbare film.
NL7609420A (nl) Werkwijze voor de vervaardiging van een half-geleiderinrichting.
NL7506594A (nl) Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
NL7807983A (nl) Werkwijze voor de vervaardiging van een halfgeleiderin- richting.
NL7610068A (nl) Werkwijze voor de bereiding van een vinylideen- fluoridepolymeerhars.
NL7603906A (nl) Werkwijze voor het vervaardigen van een steri- liteitsindicator.
NL7613440A (nl) Werkwijze en inrichting voor het vervaardigen van een halfgeleiderinrichting.
NL7604632A (nl) Werkwijze voor de vervaardiging van een half- geleiderinrichting en een halfgeleiderinrich- ting volgens deze werkwijze verkregen.
NL7513161A (nl) Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze.
NL7601830A (nl) Werkwijze voor de vervaardiging van een siliciumhalfgeleider.
NL7610283A (nl) Werkwijze voor het vervaardigen van een veldeffekttransistor.
NL7601576A (nl) Werkwijze voor het maken van een halfgeleider- -inrichting.
NL7608923A (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL7610947A (nl) Werkwijze ter vervaardiging van een halfge- leiderinrichting.
NL7510293A (nl) Werkwijze voor de vervaardiging van een multichip- bedrading.
NL7611057A (nl) Werkwijze voor de vervaardiging van een halfgeleiderinrichting.
NL182476C (nl) Werkwijze voor de bereiding van een 4-halogeen-beta-pyron.
NL7610851A (nl) Werkwijze voor de vervaardiging van geinte- greerde schakelingen.
NL7603732A (nl) Vervaardiging van een halfgeleiderinrichting.
NL7611928A (nl) Werkwijze voor de vervaardiging van een halfge- leiderinrichting.
NL7515250A (nl) Inrichting voor de vervaardiging van kunststof- foelies.
NL7614594A (nl) Werkwijze voor de vervaardiging van een halfge- leiderinrichting en een halfgeleiderinrichting op deze wijze verkregen.
NL7604652A (nl) Werkwijze voor de vervaardiging van halfgelei- ders.
NL7605091A (nl) Werkwijze voor de vervaardiging van een electro- -mechanische omzetter.

Legal Events

Date Code Title Description
BV The patent application has lapsed