FR2356739A1 - Procede de decapage a l'aide d'un plasma et dispositif obtenu - Google Patents
Procede de decapage a l'aide d'un plasma et dispositif obtenuInfo
- Publication number
- FR2356739A1 FR2356739A1 FR7720247A FR7720247A FR2356739A1 FR 2356739 A1 FR2356739 A1 FR 2356739A1 FR 7720247 A FR7720247 A FR 7720247A FR 7720247 A FR7720247 A FR 7720247A FR 2356739 A1 FR2356739 A1 FR 2356739A1
- Authority
- FR
- France
- Prior art keywords
- plasma
- stripping process
- device obtained
- photosensitive varnish
- pickled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000002966 varnish Substances 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
- H01L21/32132—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
L'invention concerne un procédé pour le décapage à plasma d'un corps, selon lequel une surface du corps est recouverte d'un masque en vernis photosensible. Conformément à l'invention, le masque en vernis photosensible appliqué dépasse les dimensions requises de la configuration décapée à former puis, le procédé est effectué de façon que le masque en vernis photosensible soit plus rapidement décapé que le corps. Il se forme un profil de décapage présentant des bords inclinés. Application : réalisation de dispositifs semiconducteurs.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7607298A NL7607298A (nl) | 1976-07-02 | 1976-07-02 | Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2356739A1 true FR2356739A1 (fr) | 1978-01-27 |
FR2356739B1 FR2356739B1 (fr) | 1982-06-18 |
Family
ID=19826508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7720247A Granted FR2356739A1 (fr) | 1976-07-02 | 1977-07-01 | Procede de decapage a l'aide d'un plasma et dispositif obtenu |
Country Status (9)
Country | Link |
---|---|
US (1) | US4293375A (fr) |
JP (1) | JPS6031100B2 (fr) |
CA (1) | CA1097434A (fr) |
CH (1) | CH630961A5 (fr) |
DE (1) | DE2727788C2 (fr) |
FR (1) | FR2356739A1 (fr) |
GB (1) | GB1571034A (fr) |
IT (1) | IT1081122B (fr) |
NL (1) | NL7607298A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0057738A2 (fr) * | 1981-02-07 | 1982-08-18 | Ibm Deutschland Gmbh | Procédé pour la réalisation et le remplissage de trous dans une couche appliquée sur un substrat |
EP0436387A2 (fr) * | 1990-01-03 | 1991-07-10 | Hewlett-Packard Company | Gravure de trous de contacts dans un diélectrique bicouche utilisant une unique chambre d'attaque |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4183780A (en) * | 1978-08-21 | 1980-01-15 | International Business Machines Corporation | Photon enhanced reactive ion etching |
EP0050973B1 (fr) * | 1980-10-28 | 1986-01-22 | Kabushiki Kaisha Toshiba | Procédé de masquage pour dispositif semiconducteurs utilisant une couche de polymère |
JPS5775429A (en) * | 1980-10-28 | 1982-05-12 | Toshiba Corp | Manufacture of semiconductor device |
JPS57170535A (en) * | 1981-04-15 | 1982-10-20 | Toshiba Corp | Etching method for thin silicon film |
DE3215410A1 (de) * | 1982-04-24 | 1983-10-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen von oeffnungen mit hilfe einer maske in einer auf einer unterlage befindlichen schicht |
US4461672A (en) * | 1982-11-18 | 1984-07-24 | Texas Instruments, Inc. | Process for etching tapered vias in silicon dioxide |
US4522681A (en) * | 1984-04-23 | 1985-06-11 | General Electric Company | Method for tapered dry etching |
DE3903699A1 (de) * | 1988-02-08 | 1989-08-17 | Ricoh Kk | Bildsensor |
JPH0964366A (ja) * | 1995-08-23 | 1997-03-07 | Toshiba Corp | 薄膜トランジスタ |
JP2016219452A (ja) * | 2015-05-14 | 2016-12-22 | 富士通株式会社 | 多層基板及び多層基板の製造方法 |
CN111725063B (zh) * | 2020-06-19 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 半导体衬底的刻蚀方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1570763A (fr) * | 1967-05-29 | 1969-06-13 | ||
FR2132745A1 (fr) * | 1971-04-08 | 1972-11-24 | Philips Nv | |
FR2282722A1 (fr) * | 1974-08-21 | 1976-03-19 | Rca Corp | Procede pour profiler des plaquettes semi-conductrices et dispositif ainsi obtenu |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3767490A (en) * | 1971-06-29 | 1973-10-23 | Ibm | Process for etching organic coating layers |
US3795557A (en) * | 1972-05-12 | 1974-03-05 | Lfe Corp | Process and material for manufacturing semiconductor devices |
NL7213625A (fr) * | 1972-10-07 | 1974-04-09 | ||
US3880684A (en) * | 1973-08-03 | 1975-04-29 | Mitsubishi Electric Corp | Process for preparing semiconductor |
US3839111A (en) * | 1973-08-20 | 1974-10-01 | Rca Corp | Method of etching silicon oxide to produce a tapered edge thereon |
JPS51117136A (en) * | 1975-04-09 | 1976-10-15 | Tokyo Shibaura Electric Co | Plasma etching process |
US3986912A (en) * | 1975-09-04 | 1976-10-19 | International Business Machines Corporation | Process for controlling the wall inclination of a plasma etched via hole |
-
1976
- 1976-07-02 NL NL7607298A patent/NL7607298A/xx not_active Application Discontinuation
-
1977
- 1977-06-21 DE DE2727788A patent/DE2727788C2/de not_active Expired
- 1977-06-29 GB GB27194/77A patent/GB1571034A/en not_active Expired
- 1977-06-29 CA CA281,727A patent/CA1097434A/fr not_active Expired
- 1977-06-29 CH CH800477A patent/CH630961A5/de not_active IP Right Cessation
- 1977-06-29 JP JP52076682A patent/JPS6031100B2/ja not_active Expired
- 1977-06-29 IT IT25218/77A patent/IT1081122B/it active
- 1977-07-01 FR FR7720247A patent/FR2356739A1/fr active Granted
-
1979
- 1979-06-13 US US06/047,979 patent/US4293375A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1570763A (fr) * | 1967-05-29 | 1969-06-13 | ||
FR2132745A1 (fr) * | 1971-04-08 | 1972-11-24 | Philips Nv | |
FR2282722A1 (fr) * | 1974-08-21 | 1976-03-19 | Rca Corp | Procede pour profiler des plaquettes semi-conductrices et dispositif ainsi obtenu |
Non-Patent Citations (2)
Title |
---|
EXBK/67 * |
EXBK/72 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0057738A2 (fr) * | 1981-02-07 | 1982-08-18 | Ibm Deutschland Gmbh | Procédé pour la réalisation et le remplissage de trous dans une couche appliquée sur un substrat |
EP0057738A3 (en) * | 1981-02-07 | 1984-06-13 | Ibm Deutschland Gmbh | Process for the formation and the filling of holes in a layer applied to a substrate |
EP0436387A2 (fr) * | 1990-01-03 | 1991-07-10 | Hewlett-Packard Company | Gravure de trous de contacts dans un diélectrique bicouche utilisant une unique chambre d'attaque |
EP0436387A3 (en) * | 1990-01-03 | 1991-10-16 | Hewlett-Packard Company | Single chamber via etch through a dual-layer dielectric |
Also Published As
Publication number | Publication date |
---|---|
CA1097434A (fr) | 1981-03-10 |
DE2727788A1 (de) | 1978-01-05 |
CH630961A5 (de) | 1982-07-15 |
IT1081122B (it) | 1985-05-16 |
US4293375A (en) | 1981-10-06 |
JPS6031100B2 (ja) | 1985-07-20 |
GB1571034A (en) | 1980-07-09 |
DE2727788C2 (de) | 1982-08-19 |
NL7607298A (nl) | 1978-01-04 |
JPS535974A (en) | 1978-01-19 |
FR2356739B1 (fr) | 1982-06-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2356739A1 (fr) | Procede de decapage a l'aide d'un plasma et dispositif obtenu | |
ES482960A1 (es) | Procedimiento para la fabricacion de dispositivos mediante mordentado con plasma, con reduccion del efecto de carga | |
ES485605A1 (es) | Un metodo para formar una region de dimension estrecha en uncuerpo de silicio | |
DE3789999D1 (de) | Photoresistverfahren zum reaktiven Ionenätzen von Metallmustern für Halbleiterbauelemente. | |
JPS5730376A (en) | Manufacture of schottky barrier fet | |
GB1527106A (en) | Method of etching multilayered articles | |
JPS5248468A (en) | Process for production of semiconductor device | |
JPS546570A (en) | Production of optical guides | |
JPS57120672A (en) | Plasma etching method | |
JPS55145344A (en) | Mthod for surface profile processing of 3-5 group compound semiconductor | |
JPS57177525A (en) | Etching method for silicon oxide | |
JPS57137472A (en) | Etching method for polycrystalline silicon | |
JPS5326575A (en) | Ion etching method | |
JPS53135582A (en) | Semiconductor device and its manufacture | |
JPS6473087A (en) | Formation of metallic pattern | |
JPS6459963A (en) | Manufacture of field-effect transistor | |
JPS5752130A (en) | Forming method for electrode | |
JPS5787175A (en) | Semiconductor device and manufacture thereof | |
JPS56162839A (en) | Silicon etchant and etching method for silicon single crystal using the same | |
JPS57187966A (en) | Manufacture of semiconductor device | |
JPS6420624A (en) | Manufacture of semiconductor device | |
JPS57118641A (en) | Lifting-off method | |
JPS56104441A (en) | Directional dry etching method | |
JPS5693320A (en) | Method for pattern formation | |
JPS57145329A (en) | Treatment of compound semiconductor epitaxial wafer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |