FI885000A - Foerfarande och anordning foer att tillverka en kiselkristall. - Google Patents
Foerfarande och anordning foer att tillverka en kiselkristall. Download PDFInfo
- Publication number
- FI885000A FI885000A FI885000A FI885000A FI885000A FI 885000 A FI885000 A FI 885000A FI 885000 A FI885000 A FI 885000A FI 885000 A FI885000 A FI 885000A FI 885000 A FI885000 A FI 885000A
- Authority
- FI
- Finland
- Prior art keywords
- kiselkristall
- anordning foer
- och anordning
- foerfarande och
- foer att
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62308766A JPH0633218B2 (ja) | 1987-12-08 | 1987-12-08 | シリコン単結晶の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FI885000A0 FI885000A0 (fi) | 1988-10-31 |
FI885000A true FI885000A (fi) | 1989-06-09 |
Family
ID=17985040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI885000A FI885000A (fi) | 1987-12-08 | 1988-10-31 | Foerfarande och anordning foer att tillverka en kiselkristall. |
Country Status (7)
Country | Link |
---|---|
US (2) | US5087321A (fi) |
EP (1) | EP0320115A1 (fi) |
JP (1) | JPH0633218B2 (fi) |
KR (1) | KR930001895B1 (fi) |
CN (1) | CN1020481C (fi) |
FI (1) | FI885000A (fi) |
MY (1) | MY103936A (fi) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0388794A (ja) * | 1989-08-31 | 1991-04-15 | Nippon Steel Corp | シリコン単結晶の引上げ方法および装置 |
WO1991005891A1 (en) * | 1989-10-16 | 1991-05-02 | Nkk Corporation | Apparatus for manufacturing silicon single crystals |
JPH0825830B1 (fi) * | 1989-10-16 | 1996-03-13 | Toshiba Ceramics Co | |
FI901415A0 (fi) * | 1989-10-26 | 1990-03-21 | Nippon Kokan Kk | Anordning foer framstaellning av kiselenkristaller. |
JP2547352B2 (ja) * | 1990-03-20 | 1996-10-23 | 東芝セラミックス株式会社 | シリコン単結晶の製造装置 |
JP2557003B2 (ja) * | 1990-04-18 | 1996-11-27 | 東芝セラミックス株式会社 | シリコン単結晶の製造装置 |
JP2633057B2 (ja) * | 1990-04-27 | 1997-07-23 | 東芝セラミックス株式会社 | シリコン単結晶の製造装置 |
JP2670548B2 (ja) * | 1990-04-27 | 1997-10-29 | 東芝セラミックス株式会社 | シリコン単結晶の製造装置 |
JPH0825836B2 (ja) * | 1990-04-27 | 1996-03-13 | 東芝セラミックス株式会社 | シリコン単結晶の製造装置 |
US5314667A (en) * | 1991-03-04 | 1994-05-24 | Lim John C | Method and apparatus for single crystal silicon production |
JP2613498B2 (ja) * | 1991-03-15 | 1997-05-28 | 信越半導体株式会社 | Si単結晶ウエーハの熱処理方法 |
JPH04317493A (ja) * | 1991-04-15 | 1992-11-09 | Nkk Corp | シリコン単結晶の製造装置 |
JP2506525B2 (ja) * | 1992-01-30 | 1996-06-12 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
US5288366A (en) * | 1992-04-24 | 1994-02-22 | Memc Electronic Materials, Inc. | Method for growing multiple single crystals and apparatus for use therein |
JP2807609B2 (ja) * | 1993-01-28 | 1998-10-08 | 三菱マテリアルシリコン株式会社 | 単結晶の引上装置 |
US5488924A (en) * | 1993-12-06 | 1996-02-06 | Memc Electronic Materials | Hopper for use in charging semiconductor source material |
JP3129236B2 (ja) * | 1996-07-15 | 2001-01-29 | 住友電気工業株式会社 | 円筒形容器内流体の対流抑制方法 |
DE60013451T2 (de) * | 1999-05-22 | 2005-10-13 | Japan Science And Technology Agency, Kawaguchi | Verfahren und vorrichtung zur herstellung von hochqualitativen einkristallen |
US6984263B2 (en) * | 2001-11-01 | 2006-01-10 | Midwest Research Institute | Shallow melt apparatus for semicontinuous czochralski crystal growth |
US20030101924A1 (en) * | 2001-11-15 | 2003-06-05 | Memc Electronic Materials, Inc. | Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
KR100423753B1 (ko) * | 2001-11-30 | 2004-03-22 | 주식회사 실트론 | 실리콘 잉곳 성장을 위한 실리콘 융액 형성방법 |
US7635414B2 (en) | 2003-11-03 | 2009-12-22 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
US7344594B2 (en) * | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
EP1806437B1 (en) * | 2004-09-03 | 2016-08-17 | Nippon Steel & Sumitomo Metal Corporation | Method for preparing silicon carbide single crystal |
US7225473B2 (en) * | 2005-01-14 | 2007-06-05 | Morning Pride Manufacturing, L.L.C. | Protective glove having leather face, leather back, and heat-resistant cover covering leather back, for firefighter, emergency rescue worker, or other worker in high-heat area |
CN100371506C (zh) * | 2005-03-28 | 2008-02-27 | 荀建华 | 单晶炉的保温装置 |
US8152921B2 (en) | 2006-09-01 | 2012-04-10 | Okmetic Oyj | Crystal manufacturing |
US8652257B2 (en) | 2010-02-22 | 2014-02-18 | Lev George Eidelman | Controlled gravity feeding czochralski apparatus with on the way melting raw material |
WO2014100487A2 (en) * | 2012-12-21 | 2014-06-26 | Sunedison, Inc. | Methods to bond silica parts |
US9863062B2 (en) | 2013-03-14 | 2018-01-09 | Corner Star Limited | Czochralski crucible for controlling oxygen and related methods |
KR101467103B1 (ko) | 2013-06-21 | 2014-11-28 | 주식회사 엘지실트론 | 실리콘 단결정 성장 장치 및 그 성장 방법 |
KR20150106204A (ko) | 2014-03-11 | 2015-09-21 | (주)기술과가치 | 잉곳 제조 장치 |
KR20150107540A (ko) | 2014-03-14 | 2015-09-23 | (주)기술과가치 | 잉곳 제조 장치 |
US20160024686A1 (en) * | 2014-07-25 | 2016-01-28 | Sunedison, Inc. | Method of designing a passage through a weir for allowing dilutions of impurities |
US10358740B2 (en) | 2014-07-25 | 2019-07-23 | Corner Star Limited | Crystal growing systems and methods including a passive heater |
CN104651934B (zh) * | 2014-10-17 | 2017-12-01 | 洛阳西格马炉业股份有限公司 | 一种节能型蓝宝石晶体生长炉 |
WO2017019453A1 (en) * | 2015-07-27 | 2017-02-02 | Sunedison, Inc. | Systems and methods for low-oxygen crystal growth using a double-layer continuous czochralski process |
CN107604430A (zh) * | 2016-07-11 | 2018-01-19 | 上海超硅半导体有限公司 | 低氧含量单晶硅生长方法 |
WO2020210129A1 (en) | 2019-04-11 | 2020-10-15 | Globalwafers Co., Ltd. | Process for preparing ingot having reduced distortion at late body length |
JP2022529451A (ja) | 2019-04-18 | 2022-06-22 | グローバルウェーハズ カンパニー リミテッド | 連続チョクラルスキー法を用いる単結晶シリコンインゴットの成長方法 |
US11111596B2 (en) | 2019-09-13 | 2021-09-07 | Globalwafers Co., Ltd. | Single crystal silicon ingot having axial uniformity |
US11111597B2 (en) | 2019-09-13 | 2021-09-07 | Globalwafers Co., Ltd. | Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method |
DE102020128225A1 (de) * | 2019-10-28 | 2021-04-29 | Pva Tepla Ag | Kristallziehanlage |
CN116356421A (zh) * | 2023-04-12 | 2023-06-30 | 纳狮新材料有限公司 | 单晶炉及其操作方法 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2892739A (en) * | 1954-10-01 | 1959-06-30 | Honeywell Regulator Co | Crystal growing procedure |
NL121446C (fi) * | 1958-11-17 | |||
US3265469A (en) * | 1964-09-21 | 1966-08-09 | Gen Electric | Crystal growing apparatus |
US3582287A (en) * | 1968-01-09 | 1971-06-01 | Emil R Capita | Seed pulling apparatus having diagonal feed and gas doping |
DE2245250A1 (de) * | 1972-09-15 | 1974-03-21 | Philips Patentverwaltung | Vorrichtung zum ziehen von kristallen, vorzugsweise einkristallen aus der schmelze |
US4036595A (en) * | 1975-11-06 | 1977-07-19 | Siltec Corporation | Continuous crystal growing furnace |
SU661966A1 (ru) * | 1976-11-23 | 1980-04-05 | Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" | Устройство дл выт гивани монокристаллов из расплава |
CH632300A5 (en) * | 1978-01-04 | 1982-09-30 | Vnii Monokristallov | System for growing single crystals from a melt |
DE2821481C2 (de) * | 1978-05-17 | 1985-12-05 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze |
JPS5611675A (en) * | 1979-07-04 | 1981-02-05 | Marantz Japan Inc | Key-touch strength changing circuit for automatic playing piano |
JPS5684397A (en) * | 1979-12-05 | 1981-07-09 | Nec Corp | Single crystal growing method |
JPS5688896A (en) * | 1979-12-22 | 1981-07-18 | Fujitsu Ltd | Growth of single crystal |
DE3005492C2 (de) * | 1980-02-14 | 1983-10-27 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski |
JPS56164097A (en) * | 1980-05-23 | 1981-12-16 | Ricoh Co Ltd | Device for pulling up single crystal |
US4330363A (en) * | 1980-08-28 | 1982-05-18 | Xerox Corporation | Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas |
US4436577A (en) * | 1980-12-29 | 1984-03-13 | Monsanto Company | Method of regulating concentration and distribution of oxygen in Czochralski grown silicon |
JPS57170892A (en) * | 1981-04-10 | 1982-10-21 | Toshiba Ceramics Co Ltd | Crucible holder made of graphite for manufacture of silicon single crystal |
DE3126694A1 (de) * | 1981-07-07 | 1983-01-20 | LuK Lamellen und Kupplungsbau GmbH, 7580 Bühl | Kupplungsscheibe, insbesondere fuer kraftfahrzeuge |
US4389377A (en) * | 1981-07-10 | 1983-06-21 | The United States Of America As Represented By The United States Department Of Energy | Apparatus for growing a dendritic web |
JPS5836997A (ja) * | 1981-08-28 | 1983-03-04 | Fujitsu Ltd | 単結晶製造装置 |
US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
JPS58130195A (ja) * | 1982-01-27 | 1983-08-03 | Toshiba Ceramics Co Ltd | 単結晶シリコン引上装置 |
JPS58223689A (ja) * | 1982-06-15 | 1983-12-26 | Toshiba Ceramics Co Ltd | 石英ルツボ支持部材 |
JPS6027684A (ja) * | 1983-07-26 | 1985-02-12 | Fujitsu Ltd | 単結晶製造装置 |
CA1261715A (en) * | 1984-07-06 | 1989-09-26 | General Signal Corporation | Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique |
JPS62501497A (ja) * | 1984-12-04 | 1987-06-18 | ダイアモンド・キュ−ビック・コ−ポレ−ション | 連続して引き出される単結晶シリコンインゴット |
JPS61146786A (ja) * | 1984-12-18 | 1986-07-04 | Toshiba Corp | 半導体単結晶製造装置 |
JPH07110798B2 (ja) * | 1986-04-12 | 1995-11-29 | 三菱マテリアル株式会社 | 単結晶製造装置 |
JPS62278188A (ja) * | 1986-05-24 | 1987-12-03 | Mitsubishi Metal Corp | 単結晶製造用ルツボ |
CA1306407C (en) * | 1987-06-08 | 1992-08-18 | Michio Kida | Apparatus for growing crystals of semiconductor materials |
JP2588716B2 (ja) * | 1987-07-10 | 1997-03-12 | 日本電信電話株式会社 | 複数の光源の周波数安定化方法 |
US4786479A (en) * | 1987-09-02 | 1988-11-22 | The United States Of America As Represented By The United States Department Of Energy | Apparatus for dendritic web growth systems |
DE3733487C2 (de) * | 1987-10-03 | 1997-08-14 | Leybold Ag | Vorrichtung zum Ziehen von Einkristallen |
JPH01122988A (ja) * | 1987-11-06 | 1989-05-16 | Kawasaki Steel Corp | 単結晶を成長させる方法および単結晶製造装置 |
JPH01234388A (ja) * | 1988-03-16 | 1989-09-19 | Toshiba Corp | 半導体単結晶の成長方法 |
-
1987
- 1987-12-08 JP JP62308766A patent/JPH0633218B2/ja not_active Expired - Lifetime
-
1988
- 1988-10-31 FI FI885000A patent/FI885000A/fi not_active Application Discontinuation
- 1988-11-04 EP EP88310393A patent/EP0320115A1/en not_active Withdrawn
- 1988-11-22 KR KR1019880015351A patent/KR930001895B1/ko not_active IP Right Cessation
- 1988-12-06 MY MYPI88001408A patent/MY103936A/en unknown
- 1988-12-08 CN CN88108387A patent/CN1020481C/zh not_active Expired - Fee Related
-
1990
- 1990-01-03 US US07/460,581 patent/US5087321A/en not_active Expired - Fee Related
- 1990-01-03 US US07/460,563 patent/US5126114A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
MY103936A (en) | 1993-10-30 |
KR930001895B1 (ko) | 1993-03-19 |
JPH0633218B2 (ja) | 1994-05-02 |
CN1020481C (zh) | 1993-05-05 |
US5087321A (en) | 1992-02-11 |
EP0320115A1 (en) | 1989-06-14 |
KR890011010A (ko) | 1989-08-12 |
FI885000A0 (fi) | 1988-10-31 |
US5126114A (en) | 1992-06-30 |
CN1034400A (zh) | 1989-08-02 |
JPH01153589A (ja) | 1989-06-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD | Application lapsed | ||
FD | Application lapsed |
Owner name: NKK CORPORATION |