ES8602300A1 - Un metodo de producir un semiconductor de silicio que ha sido impurificado por implantacion ionica - Google Patents

Un metodo de producir un semiconductor de silicio que ha sido impurificado por implantacion ionica

Info

Publication number
ES8602300A1
ES8602300A1 ES536898A ES536898A ES8602300A1 ES 8602300 A1 ES8602300 A1 ES 8602300A1 ES 536898 A ES536898 A ES 536898A ES 536898 A ES536898 A ES 536898A ES 8602300 A1 ES8602300 A1 ES 8602300A1
Authority
ES
Spain
Prior art keywords
annealing
junctions
low temperature
temperature process
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES536898A
Other languages
English (en)
Other versions
ES536898A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of ES8602300A1 publication Critical patent/ES8602300A1/es
Publication of ES536898A0 publication Critical patent/ES536898A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)

Abstract

METODO PARA PRODUCIR UN SEMICONDUCTOR DE SILICIO QUE HA SIDO DOPADO POR IMPLANTACION DE IONES, CON UN ELEMENTO SELECCIONADO ENTRE ARSENICO Y FOSFORO. CONSISTE EN IMPLANTAR IONES HIDROGENO CON UN HAZ DE IONES, DESPUES DE HABER IMPLANTADO EL ELEMENTO SELECCIONADO ENTRE ARSENICO Y FOSFORO, Y EN LA MISMA ZONA Y SUBSIGUIENTEMENTE EN RECOCER EL SEMICONDUCTOR A UNA TEMPERATURA COMPRENDIDA ENTRE 500 Y 600 GRADOS, DURANTE UN TIEMPO DE APROXIMDAMENTE UNA HORA, EN UNA ATMOSFERA INERTE. PARA LA IMPLANTACION DE IONES DE HIDROGENO SE UTILIZA UNA FUENTE DE IONES KAUFMAN QUE PERMITE IMPLANTAR GRANDES DOSIS, EN UN TIEMPO MUY BREVE.
ES536898A 1983-10-20 1984-10-19 Un metodo de producir un semiconductor de silicio que ha sido impurificado por implantacion ionica Granted ES536898A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/543,745 US4522657A (en) 1983-10-20 1983-10-20 Low temperature process for annealing shallow implanted N+/P junctions

Publications (2)

Publication Number Publication Date
ES8602300A1 true ES8602300A1 (es) 1985-11-01
ES536898A0 ES536898A0 (es) 1985-11-01

Family

ID=24169404

Family Applications (1)

Application Number Title Priority Date Filing Date
ES536898A Granted ES536898A0 (es) 1983-10-20 1984-10-19 Un metodo de producir un semiconductor de silicio que ha sido impurificado por implantacion ionica

Country Status (6)

Country Link
US (1) US4522657A (es)
EP (1) EP0146233B1 (es)
JP (1) JPS60102732A (es)
AU (1) AU567190B2 (es)
DE (1) DE3471826D1 (es)
ES (1) ES536898A0 (es)

Families Citing this family (236)

* Cited by examiner, † Cited by third party
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US5453153A (en) * 1987-11-13 1995-09-26 Kopin Corporation Zone-melting recrystallization process
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US5079187A (en) * 1987-12-07 1992-01-07 The Regents Of The University Of California Method for processing semiconductor materials
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US5023458A (en) * 1989-01-04 1991-06-11 Eaton Corporation Ion beam control system
ATE127651T1 (de) * 1989-05-04 1995-09-15 Univ California Vorrichtung und verfahren zur behandlung von materialien.
US5198881A (en) * 1989-12-28 1993-03-30 Massachusetts Institute Of Technology Barrier layer device processing
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JP3450163B2 (ja) 1997-09-12 2003-09-22 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6319784B1 (en) 1999-05-26 2001-11-20 Taiwan Semiconductor Manufacturing Company Using high temperature H2 anneal to recrystallize S/D and remove native oxide simultaneously
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DE3471826D1 (en) 1988-07-07
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AU3387084A (en) 1985-04-26
JPS60102732A (ja) 1985-06-06
EP0146233B1 (en) 1988-06-01
US4522657A (en) 1985-06-11
JPH0582750B2 (es) 1993-11-22
ES536898A0 (es) 1985-11-01

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