ES536898A0 - Un metodo de producir un semiconductor de silicio que ha sido impurificado por implantacion ionica - Google Patents

Un metodo de producir un semiconductor de silicio que ha sido impurificado por implantacion ionica

Info

Publication number
ES536898A0
ES536898A0 ES536898A ES536898A ES536898A0 ES 536898 A0 ES536898 A0 ES 536898A0 ES 536898 A ES536898 A ES 536898A ES 536898 A ES536898 A ES 536898A ES 536898 A0 ES536898 A0 ES 536898A0
Authority
ES
Spain
Prior art keywords
impurified
producing
silicon semiconductor
ionic implantation
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES536898A
Other languages
English (en)
Other versions
ES8602300A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of ES8602300A1 publication Critical patent/ES8602300A1/es
Publication of ES536898A0 publication Critical patent/ES536898A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
ES536898A 1983-10-20 1984-10-19 Un metodo de producir un semiconductor de silicio que ha sido impurificado por implantacion ionica Granted ES536898A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/543,745 US4522657A (en) 1983-10-20 1983-10-20 Low temperature process for annealing shallow implanted N+/P junctions

Publications (2)

Publication Number Publication Date
ES8602300A1 ES8602300A1 (es) 1985-11-01
ES536898A0 true ES536898A0 (es) 1985-11-01

Family

ID=24169404

Family Applications (1)

Application Number Title Priority Date Filing Date
ES536898A Granted ES536898A0 (es) 1983-10-20 1984-10-19 Un metodo de producir un semiconductor de silicio que ha sido impurificado por implantacion ionica

Country Status (6)

Country Link
US (1) US4522657A (es)
EP (1) EP0146233B1 (es)
JP (1) JPS60102732A (es)
AU (1) AU567190B2 (es)
DE (1) DE3471826D1 (es)
ES (1) ES536898A0 (es)

Families Citing this family (236)

* Cited by examiner, † Cited by third party
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US4610731A (en) * 1985-04-03 1986-09-09 At&T Bell Laboratories Shallow impurity neutralization
JP2516951B2 (ja) * 1987-02-06 1996-07-24 松下電器産業株式会社 半導体装置の製造方法
US5021119A (en) * 1987-11-13 1991-06-04 Kopin Corporation Zone-melting recrystallization process
US5453153A (en) * 1987-11-13 1995-09-26 Kopin Corporation Zone-melting recrystallization process
US5048163A (en) * 1987-12-07 1991-09-17 Asmus John F System for processing semiconductor materials
US5079187A (en) * 1987-12-07 1992-01-07 The Regents Of The University Of California Method for processing semiconductor materials
US4912062A (en) * 1988-05-20 1990-03-27 Motorola, Inc. Method of eliminating bird's beaks when forming field oxide without nitride mask
US4914305A (en) * 1989-01-04 1990-04-03 Eaton Corporation Uniform cross section ion beam system
US5023458A (en) * 1989-01-04 1991-06-11 Eaton Corporation Ion beam control system
ATE127651T1 (de) * 1989-05-04 1995-09-15 Univ California Vorrichtung und verfahren zur behandlung von materialien.
US5198881A (en) * 1989-12-28 1993-03-30 Massachusetts Institute Of Technology Barrier layer device processing
ATE216802T1 (de) * 1994-12-12 2002-05-15 Advanced Micro Devices Inc Verfahren zur herstellung vergrabener oxidschichten
JPH10209168A (ja) * 1997-01-24 1998-08-07 Nec Corp 半導体装置の製造方法
JP3123465B2 (ja) * 1997-06-09 2001-01-09 日本電気株式会社 Ｍｉｓトランジスタの製造方法
JP3450163B2 (ja) 1997-09-12 2003-09-22 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6319784B1 (en) 1999-05-26 2001-11-20 Taiwan Semiconductor Manufacturing Company Using high temperature H2 anneal to recrystallize S/D and remove native oxide simultaneously
WO2002070142A1 (en) * 2000-12-06 2002-09-12 Angstron Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
US7026229B2 (en) * 2001-11-28 2006-04-11 Vartan Semiconductor Equipment Associates, Inc. Athermal annealing with rapid thermal annealing system and method
DE10260644B3 (de) * 2002-12-23 2004-03-18 Infineon Technologies Ag Verfahren zum Dotieren eines Halbleiterkörpers
DE102005063462B4 (de) * 2004-09-22 2017-10-12 Infineon Technologies Ag Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper
JP2009533549A (ja) * 2006-04-07 2009-09-17 インスティテュート オブ ジオロジカル アンド ニュークリア サイエンシズ リミティド 酸化亜鉛材料及びそれらの調製方法
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AU567190B2 (en) 1987-11-12
DE3471826D1 (en) 1988-07-07
EP0146233A1 (en) 1985-06-26
AU3387084A (en) 1985-04-26
JPS60102732A (ja) 1985-06-06
EP0146233B1 (en) 1988-06-01
US4522657A (en) 1985-06-11
JPH0582750B2 (es) 1993-11-22

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