ATE127651T1 - Vorrichtung und verfahren zur behandlung von materialien. - Google Patents

Vorrichtung und verfahren zur behandlung von materialien.

Info

Publication number
ATE127651T1
ATE127651T1 AT90908390T AT90908390T ATE127651T1 AT E127651 T1 ATE127651 T1 AT E127651T1 AT 90908390 T AT90908390 T AT 90908390T AT 90908390 T AT90908390 T AT 90908390T AT E127651 T1 ATE127651 T1 AT E127651T1
Authority
AT
Austria
Prior art keywords
ultraviolet light
high intensity
intensity ultraviolet
temperature
pinch unit
Prior art date
Application number
AT90908390T
Other languages
English (en)
Inventor
F Asmus John
H Lovberg Ralph
Original Assignee
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/347,422 external-priority patent/US5079187A/en
Priority claimed from US07/425,865 external-priority patent/US5204506A/en
Application filed by Univ California filed Critical Univ California
Application granted granted Critical
Publication of ATE127651T1 publication Critical patent/ATE127651T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/04—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using magnetic fields substantially generated by the discharge in the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/52—Generating plasma using exploding wires or spark gaps

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Mathematical Physics (AREA)
  • Electromagnetism (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Forging (AREA)
  • Threshing Machine Elements (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Weting (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
AT90908390T 1989-05-04 1990-05-04 Vorrichtung und verfahren zur behandlung von materialien. ATE127651T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/347,422 US5079187A (en) 1987-12-07 1989-05-04 Method for processing semiconductor materials
US07/425,865 US5204506A (en) 1987-12-07 1989-10-24 Plasma pinch surface treating apparatus and method of using same

Publications (1)

Publication Number Publication Date
ATE127651T1 true ATE127651T1 (de) 1995-09-15

Family

ID=26995261

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90908390T ATE127651T1 (de) 1989-05-04 1990-05-04 Vorrichtung und verfahren zur behandlung von materialien.

Country Status (5)

Country Link
EP (1) EP0441905B1 (de)
AT (1) ATE127651T1 (de)
AU (1) AU5725690A (de)
DE (1) DE69022212D1 (de)
WO (1) WO1990013910A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7025831B1 (en) 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US6165273A (en) 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6465374B1 (en) 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
KR20010107966A (ko) * 1998-11-16 2001-12-07 에프 에스 아이 인터내셔날,인코포레이티드 자외선 웨이퍼 가열처리 및 광화학적 프로세스 장비
US10415552B2 (en) * 2017-02-07 2019-09-17 The Boeing Company Injection system and method for injecting a cylindrical array of liquid jets

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946332A (en) * 1974-06-13 1976-03-23 Samis Michael A High power density continuous wave plasma glow jet laser system
US4369514A (en) * 1980-10-30 1983-01-18 Bell Telephone Laboratories, Incorporated Recombination laser
US4450568A (en) * 1981-11-13 1984-05-22 Maxwell Laboratories, Inc. Pumping a photolytic laser utilizing a plasma pinch
US4454835A (en) * 1982-09-13 1984-06-19 The United States Of America As Represented By The Secretary Of The Navy Internal photolysis reactor
JPS59129772A (ja) * 1983-01-18 1984-07-26 Ushio Inc 光化学蒸着装置
US4522657A (en) * 1983-10-20 1985-06-11 Westinghouse Electric Corp. Low temperature process for annealing shallow implanted N+/P junctions
JPS60175351A (ja) * 1984-02-14 1985-09-09 Nippon Telegr & Teleph Corp <Ntt> Ｘ線発生装置およびｘ線露光法
US4624736A (en) * 1984-07-24 1986-11-25 The United States Of America As Represented By The United States Department Of Energy Laser/plasma chemical processing of substrates
US4718974A (en) * 1987-01-09 1988-01-12 Ultraphase Equipment, Inc. Photoresist stripping apparatus using microwave pumped ultraviolet lamp
US4889605A (en) * 1987-12-07 1989-12-26 The Regents Of The University Of California Plasma pinch system

Also Published As

Publication number Publication date
WO1990013910A1 (en) 1990-11-15
DE69022212D1 (de) 1995-10-12
EP0441905A4 (en) 1991-12-18
EP0441905B1 (de) 1995-09-06
EP0441905A1 (de) 1991-08-21
AU5725690A (en) 1990-11-29

Similar Documents

Publication Publication Date Title
ATE200829T1 (de) Photolithographisches verarbeitungsverfahren und vorrichtung
DE69408441D1 (de) Vorrichtung und verfahren zur behandlung mit flüssigkeit
HU9502907D0 (en) Process for removing surface contaminants by irradiation
BR8907529A (pt) Remocao de contaminantes de superficie atraves de irradiacao de uma fonte de elevada energia
DE69718321D1 (de) Verfahren und vorrichtung zur temperaturregelung in einer plasma-behandlungskammer
KR970030443A (ko) 반도체재료의 가공방법 및 그 장치
KR910007110B1 (ko) 표면처리장치
ATE180703T1 (de) Entfernung von oberflächen-verseuchungen durch ausstrahlung
ATE299954T1 (de) Verfahren zur erzeugung verschleissbeständiger randschichten an bauteilen aus ausscheidungshärtbaren metallischem werkstoff
ATE127651T1 (de) Vorrichtung und verfahren zur behandlung von materialien.
ATE292842T1 (de) Verfahren und vorrichtung zur oberflächenbehandlung von substraten
ATE256757T1 (de) Verfahren und vorrichtung zur erzeugung einer atmosphere für die wärmebehandlung von werkstoffen
DE69017677D1 (de) Verfahren zur behandlung von granitoberflächen mittels eines hochtemperatur-plasmastrahls.
ATE120984T1 (de) Verfahren und vorrichtung zum auslösen und/oder fördern chemischer prozesse.
DE59708409D1 (de) Verfahren zum Desinfizieren und Reinigen von Kleinteilen und dafür geeignete Vorrichtung
DE69112474D1 (de) Verfahren zur oberflächlichen Entionisierung von Glasbändern, Vorrichtung dafür und erhaltene entionisierte Produkte.
ATE200036T1 (de) Verfahren zur behandlung von molekülen und vorrichtung dafür
DE3578562D1 (de) Plasmareaktorgefaess und verfahren.
DE69005550D1 (de) Verfahren und Vorrichtung zum Herstellen von gebogenen oder/und emaillierten Glasscheiben.
DE59904014D1 (de) Verfahren und Vorrichtung zur Durchführung der Glühung eines Galvannealing-Prozesses
JPS63166233A (ja) 光励起エツチング方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties