ES8206849A1 - Perfeccionamientos en detectores fotovoltaicos de barrera schottky - Google Patents

Perfeccionamientos en detectores fotovoltaicos de barrera schottky

Info

Publication number
ES8206849A1
ES8206849A1 ES499645A ES499645A ES8206849A1 ES 8206849 A1 ES8206849 A1 ES 8206849A1 ES 499645 A ES499645 A ES 499645A ES 499645 A ES499645 A ES 499645A ES 8206849 A1 ES8206849 A1 ES 8206849A1
Authority
ES
Spain
Prior art keywords
layer
substrate
shield structure
barrier
platinum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES499645A
Other languages
English (en)
Other versions
ES499645A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Dynamics Corp
Original Assignee
General Dynamics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Dynamics Corp filed Critical General Dynamics Corp
Publication of ES499645A0 publication Critical patent/ES499645A0/es
Publication of ES8206849A1 publication Critical patent/ES8206849A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PROCEDIMIENTO DE FABRICACION DE DETECTOR FOTOVOLTAICO. CONSTITUIDO POR UN SUSTRATO (30) DE SULFURO DE CADMIO QUE TIENE UNA ESTRUCTURA PROTECTORA DE RADIACION INFRARROJA (32). UNA CAPA METALICA DE BARRERA SCHOTTKY SE DESPOSITA DIRECTAMENTE SOBRE EL SUSTRATO (30). UN CONTACTO OHMICO (38) Y OTRO DE BARRERA (40) TOCAN LA ESTRUCTURA PROTECTORA (32) Y UNA CAPA ANULAR LIMITROFE (42A). ESTA CAPA (42A) SE SUPERPONE A LA PERIFERIA DE LA CAPA METALICA (36) A TRAVES DE VENTANAS SEPARADAS EN UNA CAPA AISLANTE DE DIOXIDO DE SILICIO. EL CONTACTO DE BARRERA (40) SE EXTIENDE DENTRO DE LA VENTANA CENTRAL. UNOS HILOS CONDUCTORES DE ORO (46 Y 48) SE UNEN A LOS CONTACTOS OHMICO (38) Y DE BARRERA (40).
ES499645A 1980-03-07 1981-02-20 Perfeccionamientos en detectores fotovoltaicos de barrera schottky Expired ES8206849A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/128,325 US4319258A (en) 1980-03-07 1980-03-07 Schottky barrier photovoltaic detector

Publications (2)

Publication Number Publication Date
ES499645A0 ES499645A0 (es) 1982-08-16
ES8206849A1 true ES8206849A1 (es) 1982-08-16

Family

ID=22434786

Family Applications (1)

Application Number Title Priority Date Filing Date
ES499645A Expired ES8206849A1 (es) 1980-03-07 1981-02-20 Perfeccionamientos en detectores fotovoltaicos de barrera schottky

Country Status (18)

Country Link
US (1) US4319258A (es)
JP (2) JPS56135983A (es)
KR (1) KR840001796B1 (es)
AU (1) AU519933B2 (es)
BE (1) BE887599A (es)
CA (1) CA1159133A (es)
CH (1) CH641913A5 (es)
DE (2) DE3106215C2 (es)
DK (1) DK157584C (es)
ES (1) ES8206849A1 (es)
FR (1) FR2477779B1 (es)
IL (1) IL62119A (es)
IT (1) IT1170735B (es)
MY (1) MY8500875A (es)
NL (1) NL189790C (es)
NO (1) NO159627C (es)
PT (1) PT72551B (es)
SE (1) SE459055B (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533933A (en) * 1982-12-07 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Schottky barrier infrared detector and process
JPS59161083A (ja) * 1983-02-28 1984-09-11 Yokogawa Hewlett Packard Ltd フオト・ダイオ−ド
FR2557371B1 (fr) * 1983-12-27 1987-01-16 Thomson Csf Dispositif photosensible comportant entre les detecteurs des zones opaques au rayonnement a detecter, et procede de fabrication
JPS60253958A (ja) * 1984-05-31 1985-12-14 Sharp Corp センサ
US4942442A (en) * 1986-04-11 1990-07-17 American Telephone And Telegraph Company, At&T Bell Laboratories Device including a radiation sensor
US4789645A (en) * 1987-04-20 1988-12-06 Eaton Corporation Method for fabrication of monolithic integrated circuits
JPS63183128U (es) * 1987-05-18 1988-11-25
EP0296371B1 (de) * 1987-06-22 1992-12-23 Landis & Gyr Business Support AG Photodetektor für Ultraviolett und Verfahren zur Herstellung
JPH02149632U (es) * 1989-05-22 1990-12-20
US4990988A (en) * 1989-06-09 1991-02-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Laterally stacked Schottky diodes for infrared sensor applications
US5557148A (en) * 1993-03-30 1996-09-17 Tribotech Hermetically sealed semiconductor device
US5406122A (en) * 1993-10-27 1995-04-11 Hughes Aircraft Company Microelectronic circuit structure including conductor bridges encapsulated in inorganic dielectric passivation layer
KR100211070B1 (ko) * 1994-08-19 1999-07-15 아끼구사 나오유끼 반도체 장치 및 그 제조방법
DE102005027220A1 (de) * 2005-06-13 2006-12-14 Siemens Ag Festkörperdetektor zur Aufnahme von Röntgenabbildungen
US9929192B1 (en) 2016-09-28 2018-03-27 Raytheon Company Ultraviolet (UV) schottky diode detector having single crystal UV radiation detector material bonded directly to a support structure with proper c-axis orientation
US9985058B2 (en) 2016-09-28 2018-05-29 Raytheon Company Dual band ultraviolet (UV) and infrared radiation detector

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2688564A (en) * 1950-11-22 1954-09-07 Rca Corp Method of forming cadmium sulfide photoconductive cells
US2820841A (en) * 1956-05-10 1958-01-21 Clevite Corp Photovoltaic cells and methods of fabricating same
US2844640A (en) * 1956-05-11 1958-07-22 Donald C Reynolds Cadmium sulfide barrier layer cell
DE1223472B (de) * 1957-10-07 1966-08-25 Lab Fuer Strahlungstechnik G M Lichtempfindlicher Gleichrichter
NL280579A (es) * 1961-07-10
BE630443A (es) * 1962-04-03
US3386894A (en) * 1964-09-28 1968-06-04 Northern Electric Co Formation of metallic contacts
US3571915A (en) * 1967-02-17 1971-03-23 Clevite Corp Method of making an integrated solar cell array
US3577631A (en) * 1967-05-16 1971-05-04 Texas Instruments Inc Process for fabricating infrared detector arrays and resulting article of manufacture
US3560812A (en) * 1968-07-05 1971-02-02 Gen Electric High selectively electromagnetic radiation detecting devices
US3597270A (en) * 1968-08-15 1971-08-03 Trw Inc Inverted solid state diode
US3806779A (en) * 1969-10-02 1974-04-23 Omron Tateisi Electronics Co Semiconductor device and method of making same
NL7007171A (es) * 1970-05-16 1971-11-18
DE2112812C2 (de) * 1971-03-17 1984-02-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterbauelement mit gitterförmiger Metallelektrode und Verfahren zu dessen Herstellung
US3888697A (en) * 1971-10-23 1975-06-10 Licentia Gmbh Photocell
GB1384028A (en) * 1972-08-21 1974-02-12 Hughes Aircraft Co Method of making a semiconductor device
US4000502A (en) * 1973-11-05 1976-12-28 General Dynamics Corporation Solid state radiation detector and process
US3980915A (en) * 1974-02-27 1976-09-14 Texas Instruments Incorporated Metal-semiconductor diode infrared detector having semi-transparent electrode
JPS50151487A (es) * 1974-05-24 1975-12-05
US4001858A (en) * 1974-08-28 1977-01-04 Bell Telephone Laboratories, Incorporated Simultaneous molecular beam deposition of monocrystalline and polycrystalline iii(a)-v(a) compounds to produce semiconductor devices
DE2445548A1 (de) * 1974-09-24 1976-04-01 Baldwin Co D H Photoelement
US4016643A (en) * 1974-10-29 1977-04-12 Raytheon Company Overlay metallization field effect transistor
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
US4035197A (en) * 1976-03-30 1977-07-12 Eastman Kodak Company Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
DE2732933C2 (de) * 1977-07-21 1984-11-15 Bloss, Werner H., Prof. Dr.-Ing., 7065 Winterbach Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang
JPS6244825A (ja) * 1985-08-22 1987-02-26 Nec Corp 端末装置

Also Published As

Publication number Publication date
CA1159133A (en) 1983-12-20
IT8147840A0 (it) 1981-02-19
DK157584C (da) 1990-07-02
AU6737481A (en) 1981-09-24
DE3106215C2 (de) 1985-06-27
JPS6244825B2 (es) 1987-09-22
JPS56135983A (en) 1981-10-23
NL189790C (nl) 1993-07-16
PT72551A (en) 1981-03-01
ES499645A0 (es) 1982-08-16
KR840001796B1 (ko) 1984-10-20
NL8100868A (nl) 1981-10-01
JPH0421353B2 (es) 1992-04-09
NL189790B (nl) 1993-02-16
IL62119A (en) 1983-11-30
CH641913A5 (fr) 1984-03-15
IL62119A0 (en) 1981-03-31
BE887599A (fr) 1981-08-20
IT1170735B (it) 1987-06-03
JPS62216276A (ja) 1987-09-22
DE3153186C2 (de) 1985-10-10
NO810570L (no) 1981-09-08
NO159627C (no) 1989-01-18
KR830005727A (ko) 1983-09-09
SE8100885L (sv) 1981-09-08
FR2477779A1 (fr) 1981-09-11
MY8500875A (en) 1985-12-31
US4319258A (en) 1982-03-09
FR2477779B1 (fr) 1986-04-25
DE3106215A1 (de) 1982-01-21
SE459055B (sv) 1989-05-29
NO159627B (no) 1988-10-10
AU519933B2 (en) 1982-01-07
DK77181A (da) 1981-09-08
PT72551B (en) 1982-03-12
DK157584B (da) 1990-01-22

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20000201