NO159627B - Fotodetektor med schottky-barriere for detektering av ultrafiolett straaling. - Google Patents
Fotodetektor med schottky-barriere for detektering av ultrafiolett straaling. Download PDFInfo
- Publication number
- NO159627B NO159627B NO810570A NO810570A NO159627B NO 159627 B NO159627 B NO 159627B NO 810570 A NO810570 A NO 810570A NO 810570 A NO810570 A NO 810570A NO 159627 B NO159627 B NO 159627B
- Authority
- NO
- Norway
- Prior art keywords
- engine
- crankshaft
- cranks
- ultraphiolet
- radiation
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title 1
- 238000002485 combustion reaction Methods 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims 1
- 239000000446 fuel Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Photovoltaic Devices (AREA)
Description
Enkeltvirkende totakts forbrenningsmotor med ti sylindre.
Ved bestemmelse av tenningsrekkeføl-gen i motorer har man tidligere søkt å få mest mulig gunstige forhold når det gjel-der belastning i rammelagrene mellom veivene, utbalansering, dvs. hensyntagen til frie krefter og momenter samt indre bøy-ningsmomenter av første og annen orden, torsj onssvingningsforhold for former med en og to knutepunkter og i en viss grad og-så spylingsforholdene, samt ved oppladede motorer avgassenes fordeling til turboag-gregater. Ved høyt belastede motorer, spe-sielt store fartøysmotorer, kommer der til to ytterligere faktorer, nemlig aksialsving-ninger i veivakselen og vibrasjoner i motorens topparti, faktorer som begge er av-hengige av tenningsrekkefølgen. Tilbørlig hensyntagen til de sistnevnte faktorer kan medføre at man i noen grad må jenke på de tidligere krav om at nærliggende sylindre skal tenne med store tidsintervaller, for at man derved skal kunne minske belast-ningsintensiteten i rammelagrene.
Den foreliggende oppfinnelse angår en enkeltvirkende totakts forbrenningsmotor
med ti sylindre anordnet på rad, og forsynt med et mellomstativ som har dobbelte veivaksellagre og deler motoren i to halvdeler.
Ifølge oppfinnelsen oppnås tilfredsstillende resultater med hensyn til alle de ovenfor berørte forhold ved at motorens veivaksel er sammensatt av to like halvdeler regnet fra mellomstativets midtplan, samtidig som de veiver som sitter i hver halvdel, er forsynt med motvekter. Vinkelen mellom en vilkårlig av de nevnte ytre veiver og den tilgrensende veiv i samme veivakselhalvdel utgjør høyst 72°, og veivene er forøvrig anordnet slik at motorens tenningsrekkefølge blir 1-9-4-5-8-3-6-7-2-10, hvorved veivakselen blir sammensatt av to symmetrisk speilvendte deler. Takket være denne konstruksjon av samvirkende forholdsregler fås en tilfredsstillende fordeling av lagerbelastningen, samtidig som utbalanseringen blir god og man, foruten at der blir tatt tilbørlig hensyn til frie krefter og momenter, også kan unngå toppstag-ning av motoren og unnvære såvel aksial-svingnings- og torsj onssvingningsdempere.
Oppfinnelsen vil bli belyst i det følg-ende under henvisning til tegningen.
Fig. 1 viser et tenningsdiagram for en
ti-sylindrisk motor, og
fig. 2 er et skjematisk perspektivriss av
veivakselen.
Veivakselen består av to halvdeler 11 og 12 med veivene for de forskjellige sylindre nummerert 1—10. Halvdelene er forbun-det med hverandre ved flenser 13 i mellom-stativet og bærer der et tannhjul 14. Fra dette drives en aksel som påvirker motorens brenselpumper og eventuelt også dis-ses omkastningsmekanisme. Veivakselen hviler i rammelagre 15, av hvilke der på vanlig måte finnes ett på hver side av hver veiv, dog slik at der i tilslutning til mellom-stativet vil finnes to rammelagre uten noen mellomliggende veiv. Veivene tilhørende sylindrene 1, 5, 6 og 10 er forsynt med motvekter 16.
Av fig. 1 fremgår at vinkelen mellom sylindrene 4 og 5, resp. 6 og 7, er 36°, mens vinkelen mellom veivene 1 og 2, resp. 9 og 10, er 72°. Ved rammelagrene for de med motvekter forsynte veiver for sylindrene 1, 5, 6 og 10 finnes der ikke noen veiv på «yt-tersiden», og mellom veivene 5 og 6 sitter kjedehj ulets transmisjon til akselen for brenselpumpene, resp. omkastningsmeka-nismen, noe som innebærer en økning av svingmassen. Ved de øvrige rammelagre, som således hvert ligger mellom to veiver, er vinkelen mellom veivene 108°. Herved får man mulighet for å velge tenningsrek-kefølgen 1-9-4-5-8-3-6-7-2-10, hvilket gir de ønskede utbalanseringsforhold som eli-minerer de ulemper som hittil har forekom-met.
Claims (1)
- Enkeltvirkende totakts forbrenningsmotor med ti sylindre anordnet på rad, og forsynt med et mellomstativ som har dobbelte veivaksellagre og deler motoren 1 to halvdeler, karakterisert ved den kombinasjon at motorens veivaksel er sammensatt av to symmetrisk speilvendte deler regnet fra mellomstativets midtplan, at de veiver (1, 5 henholdsvis 6, 10) som sitter ytterst i hver veivakselhalvdel, er forsynt med motvekter, at vinkelen mellom en av de nevnte ytre veiver (1 henholdsvis 10) og den tilgrensende veiv i samme veivakselhalvdel utgjør høyst 71°, samt at veivene forøvrig er anordnet slik at motorens ten-nlngs-rekkefølge blir 1-9-4-5-8-3-6-7-2-10.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/128,325 US4319258A (en) | 1980-03-07 | 1980-03-07 | Schottky barrier photovoltaic detector |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO810570L NO810570L (no) | 1981-09-08 |
| NO159627B true NO159627B (no) | 1988-10-10 |
| NO159627C NO159627C (no) | 1989-01-18 |
Family
ID=22434786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO810570A NO159627C (no) | 1980-03-07 | 1981-02-19 | Fotodetektor med schottky-barriere for detektering av ultrafiolett straaling. |
Country Status (18)
| Country | Link |
|---|---|
| US (1) | US4319258A (no) |
| JP (2) | JPS56135983A (no) |
| KR (1) | KR840001796B1 (no) |
| AU (1) | AU519933B2 (no) |
| BE (1) | BE887599A (no) |
| CA (1) | CA1159133A (no) |
| CH (1) | CH641913A5 (no) |
| DE (2) | DE3153186C2 (no) |
| DK (1) | DK157584C (no) |
| ES (1) | ES8206849A1 (no) |
| FR (1) | FR2477779B1 (no) |
| IL (1) | IL62119A (no) |
| IT (1) | IT1170735B (no) |
| MY (1) | MY8500875A (no) |
| NL (1) | NL189790C (no) |
| NO (1) | NO159627C (no) |
| PT (1) | PT72551B (no) |
| SE (1) | SE459055B (no) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4533933A (en) * | 1982-12-07 | 1985-08-06 | The United States Of America As Represented By The Secretary Of The Air Force | Schottky barrier infrared detector and process |
| JPS59161083A (ja) * | 1983-02-28 | 1984-09-11 | Yokogawa Hewlett Packard Ltd | フオト・ダイオ−ド |
| FR2557371B1 (fr) * | 1983-12-27 | 1987-01-16 | Thomson Csf | Dispositif photosensible comportant entre les detecteurs des zones opaques au rayonnement a detecter, et procede de fabrication |
| JPS60253958A (ja) * | 1984-05-31 | 1985-12-14 | Sharp Corp | センサ |
| US4942442A (en) * | 1986-04-11 | 1990-07-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Device including a radiation sensor |
| US4789645A (en) * | 1987-04-20 | 1988-12-06 | Eaton Corporation | Method for fabrication of monolithic integrated circuits |
| JPS63183128U (no) * | 1987-05-18 | 1988-11-25 | ||
| DE3876869D1 (de) * | 1987-06-22 | 1993-02-04 | Landis & Gyr Betriebs Ag | Photodetektor fuer ultraviolett und verfahren zur herstellung. |
| JPH02149632U (no) * | 1989-05-22 | 1990-12-20 | ||
| US4990988A (en) * | 1989-06-09 | 1991-02-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Laterally stacked Schottky diodes for infrared sensor applications |
| US5557148A (en) * | 1993-03-30 | 1996-09-17 | Tribotech | Hermetically sealed semiconductor device |
| US5406122A (en) * | 1993-10-27 | 1995-04-11 | Hughes Aircraft Company | Microelectronic circuit structure including conductor bridges encapsulated in inorganic dielectric passivation layer |
| KR100211070B1 (ko) * | 1994-08-19 | 1999-07-15 | 아끼구사 나오유끼 | 반도체 장치 및 그 제조방법 |
| DE102005027220A1 (de) * | 2005-06-13 | 2006-12-14 | Siemens Ag | Festkörperdetektor zur Aufnahme von Röntgenabbildungen |
| US9929192B1 (en) * | 2016-09-28 | 2018-03-27 | Raytheon Company | Ultraviolet (UV) schottky diode detector having single crystal UV radiation detector material bonded directly to a support structure with proper c-axis orientation |
| US9985058B2 (en) | 2016-09-28 | 2018-05-29 | Raytheon Company | Dual band ultraviolet (UV) and infrared radiation detector |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2688564A (en) * | 1950-11-22 | 1954-09-07 | Rca Corp | Method of forming cadmium sulfide photoconductive cells |
| US2820841A (en) * | 1956-05-10 | 1958-01-21 | Clevite Corp | Photovoltaic cells and methods of fabricating same |
| US2844640A (en) * | 1956-05-11 | 1958-07-22 | Donald C Reynolds | Cadmium sulfide barrier layer cell |
| DE1223472B (de) * | 1957-10-07 | 1966-08-25 | Lab Fuer Strahlungstechnik G M | Lichtempfindlicher Gleichrichter |
| NL280579A (no) * | 1961-07-10 | |||
| BE630443A (no) * | 1962-04-03 | |||
| US3386894A (en) * | 1964-09-28 | 1968-06-04 | Northern Electric Co | Formation of metallic contacts |
| US3571915A (en) * | 1967-02-17 | 1971-03-23 | Clevite Corp | Method of making an integrated solar cell array |
| US3577631A (en) * | 1967-05-16 | 1971-05-04 | Texas Instruments Inc | Process for fabricating infrared detector arrays and resulting article of manufacture |
| US3560812A (en) * | 1968-07-05 | 1971-02-02 | Gen Electric | High selectively electromagnetic radiation detecting devices |
| US3597270A (en) * | 1968-08-15 | 1971-08-03 | Trw Inc | Inverted solid state diode |
| US3806779A (en) * | 1969-10-02 | 1974-04-23 | Omron Tateisi Electronics Co | Semiconductor device and method of making same |
| NL7007171A (no) * | 1970-05-16 | 1971-11-18 | ||
| DE2112812C2 (de) * | 1971-03-17 | 1984-02-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterbauelement mit gitterförmiger Metallelektrode und Verfahren zu dessen Herstellung |
| US3888697A (en) * | 1971-10-23 | 1975-06-10 | Licentia Gmbh | Photocell |
| GB1384028A (en) * | 1972-08-21 | 1974-02-12 | Hughes Aircraft Co | Method of making a semiconductor device |
| US4000502A (en) * | 1973-11-05 | 1976-12-28 | General Dynamics Corporation | Solid state radiation detector and process |
| US3980915A (en) * | 1974-02-27 | 1976-09-14 | Texas Instruments Incorporated | Metal-semiconductor diode infrared detector having semi-transparent electrode |
| JPS50151487A (no) * | 1974-05-24 | 1975-12-05 | ||
| US4001858A (en) * | 1974-08-28 | 1977-01-04 | Bell Telephone Laboratories, Incorporated | Simultaneous molecular beam deposition of monocrystalline and polycrystalline iii(a)-v(a) compounds to produce semiconductor devices |
| DE2445548A1 (de) * | 1974-09-24 | 1976-04-01 | Baldwin Co D H | Photoelement |
| US4016643A (en) * | 1974-10-29 | 1977-04-12 | Raytheon Company | Overlay metallization field effect transistor |
| US3969751A (en) * | 1974-12-18 | 1976-07-13 | Rca Corporation | Light shield for a semiconductor device comprising blackened photoresist |
| US4035197A (en) * | 1976-03-30 | 1977-07-12 | Eastman Kodak Company | Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture |
| DE2732933C2 (de) * | 1977-07-21 | 1984-11-15 | Bloss, Werner H., Prof. Dr.-Ing., 7065 Winterbach | Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang |
| JPS6244825A (ja) * | 1985-08-22 | 1987-02-26 | Nec Corp | 端末装置 |
-
1980
- 1980-03-07 US US06/128,325 patent/US4319258A/en not_active Expired - Lifetime
-
1981
- 1981-02-04 CA CA000370052A patent/CA1159133A/en not_active Expired
- 1981-02-09 SE SE8100885A patent/SE459055B/sv not_active IP Right Cessation
- 1981-02-12 IL IL62119A patent/IL62119A/xx not_active IP Right Cessation
- 1981-02-17 AU AU67374/81A patent/AU519933B2/en not_active Ceased
- 1981-02-19 CH CH111581A patent/CH641913A5/fr not_active IP Right Cessation
- 1981-02-19 DE DE3153186A patent/DE3153186C2/de not_active Expired
- 1981-02-19 KR KR1019810000528A patent/KR840001796B1/ko active
- 1981-02-19 NO NO810570A patent/NO159627C/no unknown
- 1981-02-19 IT IT47840/81A patent/IT1170735B/it active
- 1981-02-19 DE DE3106215A patent/DE3106215C2/de not_active Expired
- 1981-02-20 DK DK077181A patent/DK157584C/da active
- 1981-02-20 NL NLAANVRAGE8100868,A patent/NL189790C/xx not_active IP Right Cessation
- 1981-02-20 FR FR8103476A patent/FR2477779B1/fr not_active Expired
- 1981-02-20 ES ES499645A patent/ES8206849A1/es not_active Expired
- 1981-02-20 PT PT72551A patent/PT72551B/pt active IP Right Revival
- 1981-02-20 BE BE1/10145A patent/BE887599A/fr not_active IP Right Cessation
- 1981-03-03 JP JP3043581A patent/JPS56135983A/ja active Granted
-
1985
- 1985-12-30 MY MY875/85A patent/MY8500875A/xx unknown
-
1986
- 1986-12-25 JP JP61315933A patent/JPS62216276A/ja active Granted
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