DK157584C - Fotoelektromotorisk detektor samt fremgangsmaade til fremstilling af samme - Google Patents
Fotoelektromotorisk detektor samt fremgangsmaade til fremstilling af sammeInfo
- Publication number
- DK157584C DK157584C DK077181A DK77181A DK157584C DK 157584 C DK157584 C DK 157584C DK 077181 A DK077181 A DK 077181A DK 77181 A DK77181 A DK 77181A DK 157584 C DK157584 C DK 157584C
- Authority
- DK
- Denmark
- Prior art keywords
- electromotoric
- photo
- detector
- producing same
- producing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12832580 | 1980-03-07 | ||
| US06/128,325 US4319258A (en) | 1980-03-07 | 1980-03-07 | Schottky barrier photovoltaic detector |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DK77181A DK77181A (da) | 1981-09-08 |
| DK157584B DK157584B (da) | 1990-01-22 |
| DK157584C true DK157584C (da) | 1990-07-02 |
Family
ID=22434786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK077181A DK157584C (da) | 1980-03-07 | 1981-02-20 | Fotoelektromotorisk detektor samt fremgangsmaade til fremstilling af samme |
Country Status (18)
| Country | Link |
|---|---|
| US (1) | US4319258A (da) |
| JP (2) | JPS56135983A (da) |
| KR (1) | KR840001796B1 (da) |
| AU (1) | AU519933B2 (da) |
| BE (1) | BE887599A (da) |
| CA (1) | CA1159133A (da) |
| CH (1) | CH641913A5 (da) |
| DE (2) | DE3106215C2 (da) |
| DK (1) | DK157584C (da) |
| ES (1) | ES499645A0 (da) |
| FR (1) | FR2477779B1 (da) |
| IL (1) | IL62119A (da) |
| IT (1) | IT1170735B (da) |
| MY (1) | MY8500875A (da) |
| NL (1) | NL189790C (da) |
| NO (1) | NO159627C (da) |
| PT (1) | PT72551B (da) |
| SE (1) | SE459055B (da) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4533933A (en) * | 1982-12-07 | 1985-08-06 | The United States Of America As Represented By The Secretary Of The Air Force | Schottky barrier infrared detector and process |
| JPS59161083A (ja) * | 1983-02-28 | 1984-09-11 | Yokogawa Hewlett Packard Ltd | フオト・ダイオ−ド |
| FR2557371B1 (fr) * | 1983-12-27 | 1987-01-16 | Thomson Csf | Dispositif photosensible comportant entre les detecteurs des zones opaques au rayonnement a detecter, et procede de fabrication |
| JPS60253958A (ja) * | 1984-05-31 | 1985-12-14 | Sharp Corp | センサ |
| US4942442A (en) * | 1986-04-11 | 1990-07-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Device including a radiation sensor |
| US4789645A (en) * | 1987-04-20 | 1988-12-06 | Eaton Corporation | Method for fabrication of monolithic integrated circuits |
| JPS63183128U (da) * | 1987-05-18 | 1988-11-25 | ||
| EP0296371B1 (de) * | 1987-06-22 | 1992-12-23 | Landis & Gyr Business Support AG | Photodetektor für Ultraviolett und Verfahren zur Herstellung |
| JPH02149632U (da) * | 1989-05-22 | 1990-12-20 | ||
| US4990988A (en) * | 1989-06-09 | 1991-02-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Laterally stacked Schottky diodes for infrared sensor applications |
| US5557148A (en) * | 1993-03-30 | 1996-09-17 | Tribotech | Hermetically sealed semiconductor device |
| US5406122A (en) * | 1993-10-27 | 1995-04-11 | Hughes Aircraft Company | Microelectronic circuit structure including conductor bridges encapsulated in inorganic dielectric passivation layer |
| KR100211070B1 (ko) * | 1994-08-19 | 1999-07-15 | 아끼구사 나오유끼 | 반도체 장치 및 그 제조방법 |
| DE102005027220A1 (de) * | 2005-06-13 | 2006-12-14 | Siemens Ag | Festkörperdetektor zur Aufnahme von Röntgenabbildungen |
| US9985058B2 (en) | 2016-09-28 | 2018-05-29 | Raytheon Company | Dual band ultraviolet (UV) and infrared radiation detector |
| US9929192B1 (en) | 2016-09-28 | 2018-03-27 | Raytheon Company | Ultraviolet (UV) schottky diode detector having single crystal UV radiation detector material bonded directly to a support structure with proper c-axis orientation |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2688564A (en) * | 1950-11-22 | 1954-09-07 | Rca Corp | Method of forming cadmium sulfide photoconductive cells |
| US2820841A (en) * | 1956-05-10 | 1958-01-21 | Clevite Corp | Photovoltaic cells and methods of fabricating same |
| US2844640A (en) * | 1956-05-11 | 1958-07-22 | Donald C Reynolds | Cadmium sulfide barrier layer cell |
| DE1223472B (de) * | 1957-10-07 | 1966-08-25 | Lab Fuer Strahlungstechnik G M | Lichtempfindlicher Gleichrichter |
| NL280579A (da) * | 1961-07-10 | |||
| BE630443A (da) * | 1962-04-03 | |||
| US3386894A (en) * | 1964-09-28 | 1968-06-04 | Northern Electric Co | Formation of metallic contacts |
| US3571915A (en) * | 1967-02-17 | 1971-03-23 | Clevite Corp | Method of making an integrated solar cell array |
| US3577631A (en) * | 1967-05-16 | 1971-05-04 | Texas Instruments Inc | Process for fabricating infrared detector arrays and resulting article of manufacture |
| US3560812A (en) * | 1968-07-05 | 1971-02-02 | Gen Electric | High selectively electromagnetic radiation detecting devices |
| US3597270A (en) * | 1968-08-15 | 1971-08-03 | Trw Inc | Inverted solid state diode |
| US3806779A (en) * | 1969-10-02 | 1974-04-23 | Omron Tateisi Electronics Co | Semiconductor device and method of making same |
| NL7007171A (da) * | 1970-05-16 | 1971-11-18 | ||
| DE2112812C2 (de) * | 1971-03-17 | 1984-02-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterbauelement mit gitterförmiger Metallelektrode und Verfahren zu dessen Herstellung |
| US3888697A (en) * | 1971-10-23 | 1975-06-10 | Licentia Gmbh | Photocell |
| GB1384028A (en) * | 1972-08-21 | 1974-02-12 | Hughes Aircraft Co | Method of making a semiconductor device |
| US4000502A (en) * | 1973-11-05 | 1976-12-28 | General Dynamics Corporation | Solid state radiation detector and process |
| US3980915A (en) * | 1974-02-27 | 1976-09-14 | Texas Instruments Incorporated | Metal-semiconductor diode infrared detector having semi-transparent electrode |
| JPS50151487A (da) * | 1974-05-24 | 1975-12-05 | ||
| US4001858A (en) * | 1974-08-28 | 1977-01-04 | Bell Telephone Laboratories, Incorporated | Simultaneous molecular beam deposition of monocrystalline and polycrystalline iii(a)-v(a) compounds to produce semiconductor devices |
| DE2445548A1 (de) * | 1974-09-24 | 1976-04-01 | Baldwin Co D H | Photoelement |
| US4016643A (en) * | 1974-10-29 | 1977-04-12 | Raytheon Company | Overlay metallization field effect transistor |
| US3969751A (en) * | 1974-12-18 | 1976-07-13 | Rca Corporation | Light shield for a semiconductor device comprising blackened photoresist |
| US4035197A (en) * | 1976-03-30 | 1977-07-12 | Eastman Kodak Company | Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture |
| DE2732933C2 (de) * | 1977-07-21 | 1984-11-15 | Bloss, Werner H., Prof. Dr.-Ing., 7065 Winterbach | Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang |
| JPS6244825A (ja) * | 1985-08-22 | 1987-02-26 | Nec Corp | 端末装置 |
-
1980
- 1980-03-07 US US06/128,325 patent/US4319258A/en not_active Expired - Lifetime
-
1981
- 1981-02-04 CA CA000370052A patent/CA1159133A/en not_active Expired
- 1981-02-09 SE SE8100885A patent/SE459055B/sv not_active IP Right Cessation
- 1981-02-12 IL IL62119A patent/IL62119A/xx not_active IP Right Cessation
- 1981-02-17 AU AU67374/81A patent/AU519933B2/en not_active Ceased
- 1981-02-19 DE DE3106215A patent/DE3106215C2/de not_active Expired
- 1981-02-19 IT IT47840/81A patent/IT1170735B/it active
- 1981-02-19 CH CH111581A patent/CH641913A5/fr not_active IP Right Cessation
- 1981-02-19 KR KR1019810000528A patent/KR840001796B1/ko active
- 1981-02-19 NO NO810570A patent/NO159627C/no unknown
- 1981-02-19 DE DE3153186A patent/DE3153186C2/de not_active Expired
- 1981-02-20 BE BE1/10145A patent/BE887599A/fr not_active IP Right Cessation
- 1981-02-20 DK DK077181A patent/DK157584C/da active
- 1981-02-20 NL NLAANVRAGE8100868,A patent/NL189790C/xx not_active IP Right Cessation
- 1981-02-20 ES ES499645A patent/ES499645A0/es active Granted
- 1981-02-20 FR FR8103476A patent/FR2477779B1/fr not_active Expired
- 1981-02-20 PT PT72551A patent/PT72551B/pt active IP Right Revival
- 1981-03-03 JP JP3043581A patent/JPS56135983A/ja active Granted
-
1985
- 1985-12-30 MY MY875/85A patent/MY8500875A/xx unknown
-
1986
- 1986-12-25 JP JP61315933A patent/JPS62216276A/ja active Granted
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