DE2732933C2 - Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang - Google Patents
Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-HeteroübergangInfo
- Publication number
- DE2732933C2 DE2732933C2 DE2732933A DE2732933A DE2732933C2 DE 2732933 C2 DE2732933 C2 DE 2732933C2 DE 2732933 A DE2732933 A DE 2732933A DE 2732933 A DE2732933 A DE 2732933A DE 2732933 C2 DE2732933 C2 DE 2732933C2
- Authority
- DE
- Germany
- Prior art keywords
- solar cells
- layer
- adhesive
- grid
- cadmium sulfide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010409 thin film Substances 0.000 title claims description 3
- 239000000853 adhesive Substances 0.000 claims abstract description 23
- 230000001070 adhesive effect Effects 0.000 claims abstract description 23
- 239000006059 cover glass Substances 0.000 claims abstract description 15
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 13
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 239000011889 copper foil Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 2
- 239000012945 sealing adhesive Substances 0.000 claims description 2
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 39
- 239000010949 copper Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/04—Detergent materials or soaps characterised by their shape or physical properties combined with or containing other objects
- C11D17/041—Compositions releasably affixed on a substrate or incorporated into a dispensing means
- C11D17/047—Arrangements specially adapted for dry cleaning or laundry dryer related applications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
- H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Claims (4)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2732933A DE2732933C2 (de) | 1977-07-21 | 1977-07-21 | Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang |
AU38108/78A AU519312B2 (en) | 1977-07-21 | 1978-07-18 | Encapsulated solar cells |
US05/926,433 US4283590A (en) | 1977-07-21 | 1978-07-20 | Method for production of solar cells and solar cells produced thereby |
EP78100452A EP0000715B1 (de) | 1977-07-21 | 1978-07-20 | Verfahren zur Herstellung von Cadmiumsulfid-Kupfersulfid-Solarzellen und nach diesem Verfahren hergestellte Solarzellen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2732933A DE2732933C2 (de) | 1977-07-21 | 1977-07-21 | Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2732933A1 DE2732933A1 (de) | 1979-02-08 |
DE2732933C2 true DE2732933C2 (de) | 1984-11-15 |
Family
ID=6014494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2732933A Expired DE2732933C2 (de) | 1977-07-21 | 1977-07-21 | Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang |
Country Status (4)
Country | Link |
---|---|
US (1) | US4283590A (de) |
EP (1) | EP0000715B1 (de) |
AU (1) | AU519312B2 (de) |
DE (1) | DE2732933C2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014019560A1 (de) | 2012-08-02 | 2014-02-06 | Dynamic Solar Systems Inc. | Verbesserte schichtsolarzelle |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2926754A1 (de) * | 1979-07-03 | 1981-01-15 | Licentia Gmbh | Solarzellen-anordnung |
IN152505B (de) * | 1979-08-22 | 1984-01-28 | Ses Inc | |
US4319258A (en) * | 1980-03-07 | 1982-03-09 | General Dynamics, Pomona Division | Schottky barrier photovoltaic detector |
US4400577A (en) * | 1981-07-16 | 1983-08-23 | Spear Reginald G | Thin solar cells |
EP0091998A1 (de) * | 1982-03-08 | 1983-10-26 | Prutec Limited | Cadmium-Sulfid-Solarzellen |
DE3312053C2 (de) * | 1983-04-02 | 1985-03-28 | Nukem Gmbh, 6450 Hanau | Verfahren zum Verhindern von Kurz- oder Nebenschlüssen in einer großflächigen Dünnschicht-Solarzelle |
DE3328899C2 (de) * | 1983-08-10 | 1985-07-11 | Nukem Gmbh, 6450 Hanau | Photovoltaische Zelle |
DE3328869A1 (de) * | 1983-08-10 | 1985-02-28 | Nukem Gmbh, 6450 Hanau | Photovoltaische zelle und verfahren zum herstellen dieser |
US4616403A (en) * | 1984-08-31 | 1986-10-14 | Texas Instruments Incorporated | Configuration of a metal insulator semiconductor with a processor based gate |
US4753683A (en) * | 1985-09-09 | 1988-06-28 | Hughes Aircraft Company | Gallium arsenide solar cell system |
US4673770A (en) * | 1985-10-21 | 1987-06-16 | Joseph Mandelkorn | Glass sealed silicon membrane solar cell |
IT1272665B (it) * | 1993-09-23 | 1997-06-26 | Eurosolare Spa | Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino |
JP3516156B2 (ja) * | 1997-12-16 | 2004-04-05 | シャープ株式会社 | 太陽電池の製造方法および保護カバー用素材板 |
US5972732A (en) * | 1997-12-19 | 1999-10-26 | Sandia Corporation | Method of monolithic module assembly |
US7507903B2 (en) * | 1999-03-30 | 2009-03-24 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8664030B2 (en) | 1999-03-30 | 2014-03-04 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8138413B2 (en) | 2006-04-13 | 2012-03-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8222513B2 (en) | 2006-04-13 | 2012-07-17 | Daniel Luch | Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture |
US8076568B2 (en) | 2006-04-13 | 2011-12-13 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US20090111206A1 (en) | 1999-03-30 | 2009-04-30 | Daniel Luch | Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture |
US7898054B2 (en) | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8198696B2 (en) | 2000-02-04 | 2012-06-12 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7898053B2 (en) | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US9236512B2 (en) | 2006-04-13 | 2016-01-12 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9006563B2 (en) | 2006-04-13 | 2015-04-14 | Solannex, Inc. | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8884155B2 (en) | 2006-04-13 | 2014-11-11 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8822810B2 (en) | 2006-04-13 | 2014-09-02 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9865758B2 (en) | 2006-04-13 | 2018-01-09 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8729385B2 (en) | 2006-04-13 | 2014-05-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3346419A (en) * | 1963-11-29 | 1967-10-10 | James E Webb | Solar cell mounting |
FR1446911A (fr) * | 1964-09-18 | 1966-07-22 | Ass Elect Ind | Perfectionnements aux procédés de production d'une couche de sulfure de cadmium |
US3480473A (en) * | 1966-06-24 | 1969-11-25 | Kewanee Oil Co | Method of producing polycrystalline photovoltaic cells |
US3472690A (en) * | 1967-02-09 | 1969-10-14 | Kewanee Oil Co | Process of preparing a flexible rear wall photovoltaic cell |
FR1562163A (de) * | 1968-02-16 | 1969-04-04 | ||
DE2112812C2 (de) * | 1971-03-17 | 1984-02-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterbauelement mit gitterförmiger Metallelektrode und Verfahren zu dessen Herstellung |
JPS5014116Y2 (de) * | 1971-06-04 | 1975-05-01 | ||
BE789331A (fr) * | 1971-09-28 | 1973-01-15 | Communications Satellite Corp | Cellule solaire a geometrie fine |
US3888697A (en) * | 1971-10-23 | 1975-06-10 | Licentia Gmbh | Photocell |
FR2156924B3 (de) * | 1971-10-23 | 1975-11-28 | Licentia Gmbh | |
GB1504854A (en) * | 1974-03-21 | 1978-03-22 | Int Research & Dev Co Ltd | Photodetectors and thin film photovoltaic arrays |
US4083097A (en) * | 1976-11-30 | 1978-04-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of making encapsulated solar cell modules |
US4127424A (en) * | 1976-12-06 | 1978-11-28 | Ses, Incorporated | Photovoltaic cell array |
US4084985A (en) * | 1977-04-25 | 1978-04-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for producing solar energy panels by automation |
-
1977
- 1977-07-21 DE DE2732933A patent/DE2732933C2/de not_active Expired
-
1978
- 1978-07-18 AU AU38108/78A patent/AU519312B2/en not_active Expired
- 1978-07-20 EP EP78100452A patent/EP0000715B1/de not_active Expired
- 1978-07-20 US US05/926,433 patent/US4283590A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014019560A1 (de) | 2012-08-02 | 2014-02-06 | Dynamic Solar Systems Inc. | Verbesserte schichtsolarzelle |
Also Published As
Publication number | Publication date |
---|---|
AU3810878A (en) | 1980-01-24 |
EP0000715B1 (de) | 1981-09-02 |
US4283590A (en) | 1981-08-11 |
AU519312B2 (en) | 1981-11-26 |
EP0000715A1 (de) | 1979-02-21 |
DE2732933A1 (de) | 1979-02-08 |
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D2 | Grant after examination | ||
8381 | Inventor (new situation) |
Free format text: BILGER, GERHARD, DIPL.-ING., 7000 STUTTGART, DE HEWIG, GERT, DR.-ING., 7031 STEINENBRONN, DE PFISTERER, FRITZ, DIPL.-PHYS., 7128 LAUFFEN, DE SCHOCK, HANS-WERNER, DIPL.-ING., 7033 HERRENBERG, DE |
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8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |