ES459671A1 - Procedimiento y aparato para producir una capa depositada por sublimacion catodica sobre un substrato tubular alarga- do. - Google Patents

Procedimiento y aparato para producir una capa depositada por sublimacion catodica sobre un substrato tubular alarga- do.

Info

Publication number
ES459671A1
ES459671A1 ES459671A ES459671A ES459671A1 ES 459671 A1 ES459671 A1 ES 459671A1 ES 459671 A ES459671 A ES 459671A ES 459671 A ES459671 A ES 459671A ES 459671 A1 ES459671 A1 ES 459671A1
Authority
ES
Spain
Prior art keywords
sputtering
zone
reactive
sputtered
reactive gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES459671A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Sydney
Original Assignee
University of Sydney
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Sydney filed Critical University of Sydney
Publication of ES459671A1 publication Critical patent/ES459671A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Procedimiento y aparato para producir una capa depositada para sublimación catódica sobre un substrato tubular alargado de composición y espesor relativamente uniformes, sublimando reactivamente átomos de un impureza gaseosa y desde un electrodo mecánico simultáneamente sobre la superficie del substrato procedimiento, caracterizado porque el electrodo se dispone con su superficie paralela a la superficie del substrato y se produce un movimiento de rotación relativo entre las dos superficies de modo que el substrato se revista progresivamente alrededor de su circunferencia con material de sublimación catódica, mientras que el flujo de impurezas gaseosa se controla en la zona de sublimación catódica de modos que su flujo entre regiones diferentes a lo largo de la longitud de la zona de sublimación catódica se reduzca al mínimo o se evite.
ES459671A 1976-06-10 1977-06-10 Procedimiento y aparato para producir una capa depositada por sublimacion catodica sobre un substrato tubular alarga- do. Expired ES459671A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AU622876 1976-06-10

Publications (1)

Publication Number Publication Date
ES459671A1 true ES459671A1 (es) 1978-05-01

Family

ID=3696752

Family Applications (1)

Application Number Title Priority Date Filing Date
ES459671A Expired ES459671A1 (es) 1976-06-10 1977-06-10 Procedimiento y aparato para producir una capa depositada por sublimacion catodica sobre un substrato tubular alarga- do.

Country Status (13)

Country Link
US (1) US4128466A (es)
JP (1) JPS52150790A (es)
AU (1) AU507748B2 (es)
CA (1) CA1076521A (es)
CH (1) CH622828A5 (es)
DE (1) DE2725885A1 (es)
ES (1) ES459671A1 (es)
FR (1) FR2354393A1 (es)
GB (1) GB1570044A (es)
IL (1) IL52212A (es)
IT (1) IT1083425B (es)
NL (1) NL7706230A (es)
SE (1) SE440369B (es)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2010676B (en) * 1977-12-27 1982-05-19 Alza Corp Diffusional drug delivery device with block copolymer as drug carrier
US4151064A (en) * 1977-12-27 1979-04-24 Coulter Stork U.S.A., Inc. Apparatus for sputtering cylinders
JPS5594479A (en) * 1979-01-06 1980-07-17 Coulter Systems Corp Spattering method and apparatus
DE3002194A1 (de) * 1980-01-22 1981-07-23 Berna AG Olten, Olten Vorrichtung zur (teil) beschichtung eines substrates durch kathodenzerstaeubung, vefahren zur beschichtung und deren anwendung
US4309261A (en) * 1980-07-03 1982-01-05 University Of Sydney Method of and apparatus for reactively sputtering a graded surface coating onto a substrate
US4290877A (en) * 1980-09-08 1981-09-22 The United States Of America As Represented By The Secretary Of The Interior Sputtering apparatus for coating elongated tubes and strips
FR2490246A1 (fr) * 1980-09-17 1982-03-19 Cit Alcatel Dispositif de deposition chimique activee sous plasma
JPS57111031A (en) * 1980-12-27 1982-07-10 Clarion Co Ltd Sputtering device
CA1155798A (en) * 1981-03-30 1983-10-25 Shmuel Maniv Reactive deposition method and apparatus
JPS6037188B2 (ja) * 1981-08-27 1985-08-24 三菱マテリアル株式会社 スパツタリング装置
FR2524618B1 (fr) * 1982-03-31 1987-11-20 Commissariat Energie Atomique Revetement pour la conversion photothermique
JPS599166U (ja) * 1982-07-08 1984-01-20 日産自動車株式会社 内燃機関の点火制御装置
EP0106638A1 (en) * 1982-10-12 1984-04-25 National Research Development Corporation Method and apparatus for growing material in a glow discharge
US4704339A (en) * 1982-10-12 1987-11-03 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Infra-red transparent optical components
JPS6016755U (ja) * 1982-12-12 1985-02-04 白木金属工業株式会社 被膜蒸着装置
JPS5991361U (ja) * 1982-12-12 1984-06-21 日東工器株式会社 被膜蒸着装置
JPS5991360U (ja) * 1982-12-12 1984-06-21 シロキ工業株式会社 反応性蒸着膜形成装置
DE3306738A1 (de) * 1983-02-25 1984-08-30 Berna AG Olten, Olten Vorrichtung und verfahren zur beschichtung von substraten mittels glimmentladung, sowie deren anwendung
US4420385A (en) * 1983-04-15 1983-12-13 Gryphon Products Apparatus and process for sputter deposition of reacted thin films
CH659346A5 (de) * 1983-05-10 1987-01-15 Balzers Hochvakuum Vorrichtung zum behandeln der innenwand eines rohres.
US4491509A (en) * 1984-03-09 1985-01-01 At&T Technologies, Inc. Methods of and apparatus for sputtering material onto a substrate
DE3726731A1 (de) * 1987-08-11 1989-02-23 Hartec Ges Fuer Hartstoffe Und Verfahren zum aufbringen von ueberzuegen auf gegenstaende mittels magnetfeldunterstuetzter kathodenzerstaeubung im vakuum
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
US4851095A (en) * 1988-02-08 1989-07-25 Optical Coating Laboratory, Inc. Magnetron sputtering apparatus and process
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
US5225057A (en) * 1988-02-08 1993-07-06 Optical Coating Laboratory, Inc. Process for depositing optical films on both planar and non-planar substrates
US5798027A (en) * 1988-02-08 1998-08-25 Optical Coating Laboratory, Inc. Process for depositing optical thin films on both planar and non-planar substrates
DE4402883A1 (de) * 1994-02-01 1995-08-03 Henkel Kgaa Optimiertes Verfahren zur Aufarbeitung von wasserdampfbasierten Brüdenströmen
JPH07316810A (ja) * 1994-05-27 1995-12-05 Fuji Xerox Co Ltd スパッタリング装置
WO1999023274A1 (de) * 1997-11-03 1999-05-14 Siemens Aktiengesellschaft GASSTRAHL-PVD-VERFAHREN ZUR HERSTELLUNG EINER SCHICHT MIT MoSi¿2?
US6436252B1 (en) 2000-04-07 2002-08-20 Surface Engineered Products Corp. Method and apparatus for magnetron sputtering
US6669824B2 (en) 2000-07-10 2003-12-30 Unaxis Usa, Inc. Dual-scan thin film processing system
US6495010B2 (en) 2000-07-10 2002-12-17 Unaxis Usa, Inc. Differentially-pumped material processing system
ITFI20020042A1 (it) * 2002-03-08 2002-06-06 Galileo Vacuum Systems S R L Impianto per la metallizzazione sotto vuoto di oggetti trattati in lotti
CN102598286A (zh) * 2009-09-06 2012-07-18 张晗钟 管状光伏器件和制造方法
US9392678B2 (en) * 2012-10-16 2016-07-12 Asml Netherlands B.V. Target material supply apparatus for an extreme ultraviolet light source

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2476592A (en) * 1944-12-13 1949-07-19 Fruth Hal Frederick Cathodic deposition apparatus
US3324825A (en) * 1964-11-25 1967-06-13 Mhd Res Inc Glow discharge reactor
FR1415251A (fr) * 1964-11-27 1965-10-22 Fuji Photo Film Co Ltd Procédé et appareil d'application de revêtements sous vide
NL130959C (es) * 1965-12-17
FR1492429A (fr) * 1966-08-31 1967-08-18 Libbey Owens Ford Glass Co Procédé et appareil pour éliminer les éléments contaminants de la surface d'un substrat
US3501393A (en) * 1967-05-05 1970-03-17 Litton Systems Inc Apparatus for sputtering wherein the plasma is confined by the target structure
GB1147318A (en) * 1968-02-22 1969-04-02 Standard Telephones Cables Ltd Improvements in r.f. cathodic sputtering systems
IL34931A (en) * 1969-07-28 1973-04-30 Gillette Co Metal articles with protective metal layers and methods and apparatus for their manufacture
US3725238A (en) * 1969-07-28 1973-04-03 Gillette Co Target element
DE2109061A1 (en) * 1970-02-27 1971-09-09 Varian Associates Vacuum coating of multiface substrate
FR2088659A5 (es) * 1970-04-21 1972-01-07 Progil
JPS473154U (es) * 1971-01-29 1972-09-02
GB1365492A (en) * 1971-02-05 1974-09-04 Triplex Safety Glass Co Metal oxide films
US3856654A (en) * 1971-08-26 1974-12-24 Western Electric Co Apparatus for feeding and coating masses of workpieces in a controlled atmosphere
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor
US3897325A (en) * 1972-10-20 1975-07-29 Nippon Electric Varian Ltd Low temperature sputtering device
JPS49125285A (es) * 1973-04-06 1974-11-30
US3976555A (en) * 1975-03-20 1976-08-24 Coulter Information Systems, Inc. Method and apparatus for supplying background gas in a sputtering chamber
US3979273A (en) * 1975-05-27 1976-09-07 United Technologies Corporation Method of forming aluminide coatings on nickel-, cobalt-, and iron-base alloys

Also Published As

Publication number Publication date
JPS572272B2 (es) 1982-01-14
CH622828A5 (es) 1981-04-30
DE2725885C2 (es) 1987-07-09
IL52212A0 (en) 1977-08-31
NL7706230A (nl) 1977-12-13
FR2354393A1 (fr) 1978-01-06
CA1076521A (en) 1980-04-29
GB1570044A (en) 1980-06-25
DE2725885A1 (de) 1977-12-22
AU2514177A (en) 1978-11-16
SE7706649L (sv) 1977-12-11
US4128466A (en) 1978-12-05
FR2354393B1 (es) 1982-03-19
SE440369B (sv) 1985-07-29
JPS52150790A (en) 1977-12-14
AU507748B2 (en) 1980-02-28
IT1083425B (it) 1985-05-21
IL52212A (en) 1979-10-31

Similar Documents

Publication Publication Date Title
ES459671A1 (es) Procedimiento y aparato para producir una capa depositada por sublimacion catodica sobre un substrato tubular alarga- do.
JPS52140267A (en) Vapor epitaxial crystal growing device
JPS5210869A (en) Thin film forming method
JPS5437077A (en) Chemical evaporation method and apparatus for same
JPS5358490A (en) Forming method for film
JPS5320767A (en) X-ray mask supporting underlayer and its production
JPS5352356A (en) Deposition prevention method in hot wall type reaction furnace
JPS5358487A (en) Decompressive gas phase reaction apparatus
JPS5541825A (en) Reactor with varying device for passage of gas
JPS5790933A (en) Manufacture of amorphous semiconductor film
JPS52140274A (en) Pressure-reduction vapor growth method
ES344947A1 (es) Metodo y aparato para producir y mantener un plasma gaseo- so.
JPS52124859A (en) Continuous vapor phase growth apparatus
JPS5351964A (en) Selective growth method for semiconductor crystal
AU556652B2 (en) Glow discharge deposition apparatus
JPS5420971A (en) Vapor phase growing device
JPS5727018A (en) Vapor growth device of compound semiconductor
FR2443137A1 (fr) Procede pour ameliorer l'uniformite des couches epitaxiales, dispositif et produits obtenus
JPS53148278A (en) Method and apparatus of vapor phase growth of compound semiconductor crystals
JPS5381488A (en) Gas phase growth apparatus
JPS5727020A (en) Vapor phase crystal growth device
JPS6439363A (en) Method and device for forming thin film of conductive and transparent metal oxide by reactive sputtering
JPS5421264A (en) Forming method of semiconductor surface magnetization
JPS5421274A (en) Chromium plate
JPS55162221A (en) Apparatus for vapor growth

Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19990601