ES2699223T3 - Composición acuosa alcalina de grabado y de limpieza y procedimiento de tratamiento de la superficie de sustratos de silicio - Google Patents

Composición acuosa alcalina de grabado y de limpieza y procedimiento de tratamiento de la superficie de sustratos de silicio Download PDF

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Publication number
ES2699223T3
ES2699223T3 ES11792023T ES11792023T ES2699223T3 ES 2699223 T3 ES2699223 T3 ES 2699223T3 ES 11792023 T ES11792023 T ES 11792023T ES 11792023 T ES11792023 T ES 11792023T ES 2699223 T3 ES2699223 T3 ES 2699223T3
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Spain
Prior art keywords
water
soluble
silicon substrate
general formula
silicon
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ES11792023T
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English (en)
Spanish (es)
Inventor
Berthold Ferstl
Simon Braun
Achim Fessenbecker
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BASF SE
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BASF SE
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
  • Photovoltaic Devices (AREA)
ES11792023T 2010-06-09 2011-06-01 Composición acuosa alcalina de grabado y de limpieza y procedimiento de tratamiento de la superficie de sustratos de silicio Active ES2699223T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35283110P 2010-06-09 2010-06-09
PCT/IB2011/052418 WO2011154875A1 (en) 2010-06-09 2011-06-01 Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates

Publications (1)

Publication Number Publication Date
ES2699223T3 true ES2699223T3 (es) 2019-02-08

Family

ID=45097599

Family Applications (1)

Application Number Title Priority Date Filing Date
ES11792023T Active ES2699223T3 (es) 2010-06-09 2011-06-01 Composición acuosa alcalina de grabado y de limpieza y procedimiento de tratamiento de la superficie de sustratos de silicio

Country Status (11)

Country Link
US (1) US9076920B2 (OSRAM)
EP (1) EP2580303B1 (OSRAM)
JP (1) JP2013534547A (OSRAM)
KR (1) KR101894603B1 (OSRAM)
CN (1) CN103038311B (OSRAM)
ES (1) ES2699223T3 (OSRAM)
MY (1) MY160091A (OSRAM)
PH (1) PH12012502385A1 (OSRAM)
SG (1) SG186108A1 (OSRAM)
TW (1) TWI498421B (OSRAM)
WO (1) WO2011154875A1 (OSRAM)

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CN104584232B (zh) * 2012-08-10 2017-03-08 第一工业制药株式会社 纹理形成用蚀刻液及使用其的纹理形成方法
KR102118964B1 (ko) * 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
CA2917252A1 (en) * 2013-07-16 2015-01-22 Axel Carstens New salts, crystals, complexes, and derivatives of threonine diacetic acid, a process to prepare threonine diacetic acid, and the use thereof
JP6462572B2 (ja) 2013-09-05 2019-01-30 小林　光 水素製造装置、水素製造方法、水素製造用シリコン微細粒子、及び水素製造用シリコン微細粒子の製造方法
JP6373029B2 (ja) * 2014-03-27 2018-08-15 株式会社フジミインコーポレーテッド 研磨用組成物
JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
DE102014206675A1 (de) * 2014-04-07 2015-10-08 Gebr. Schmid Gmbh Verfahren und Lösung zur Herstellung und Nachbehandlung von Wafern
JP6417612B2 (ja) * 2014-12-01 2018-11-07 メック株式会社 エッチング剤およびその補給液、マグネシウム部品の表面粗化方法、ならびにマグネシウム−樹脂複合体の製造方法
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KR102457249B1 (ko) * 2015-09-18 2022-10-21 주식회사 이엔에프테크놀로지 식각 조성물
CN105118898A (zh) * 2015-09-23 2015-12-02 中利腾晖光伏科技有限公司 一种硅片表面钝化方法及基于其的n型双面电池的制作方法
KR102549285B1 (ko) * 2015-11-14 2023-06-28 도쿄엘렉트론가부시키가이샤 묽은 tmah을 사용하여 마이크로전자 기판을 처리하는 방법
CN107164109A (zh) * 2017-03-31 2017-09-15 吴江创源新材料科技有限公司 一种蓝宝石晶片退火前清洗液及其制备方法和清洗工艺
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Also Published As

Publication number Publication date
US9076920B2 (en) 2015-07-07
KR101894603B1 (ko) 2018-09-03
EP2580303A4 (en) 2016-01-06
WO2011154875A1 (en) 2011-12-15
CN103038311A (zh) 2013-04-10
SG186108A1 (en) 2013-01-30
PH12012502385A1 (en) 2022-03-21
CN103038311B (zh) 2015-10-07
KR20130093070A (ko) 2013-08-21
TW201209157A (en) 2012-03-01
EP2580303A1 (en) 2013-04-17
JP2013534547A (ja) 2013-09-05
EP2580303B1 (en) 2018-08-29
US20130078756A1 (en) 2013-03-28
TWI498421B (zh) 2015-09-01
MY160091A (en) 2017-02-28

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