ES2044838T3 - Dispositivo de conversion fotoelectrica. - Google Patents

Dispositivo de conversion fotoelectrica.

Info

Publication number
ES2044838T3
ES2044838T3 ES86308864T ES86308864T ES2044838T3 ES 2044838 T3 ES2044838 T3 ES 2044838T3 ES 86308864 T ES86308864 T ES 86308864T ES 86308864 T ES86308864 T ES 86308864T ES 2044838 T3 ES2044838 T3 ES 2044838T3
Authority
ES
Spain
Prior art keywords
electrode region
control electrode
emitter
stored
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES86308864T
Other languages
English (en)
Inventor
Shigetoshi Sugawa
Nobuyoshi Tanaka
Toshiji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2044838T3 publication Critical patent/ES2044838T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers

Abstract

EL DISPOSITIVO DE CONVERSION FOTOELECTRICO COMPRENDE UNA PLURALIDAD DE CELULAS FOTOELECTRICAS. CADA CELULA PUEDE REALIZAR UNA OPERACION DE ALMACENAJE, OTRA DE LECTURA Y OTRA DE RENOVACION. EN LA OPERACION DE ALMACENAJE, UN POTENCIAL DE UNA REGION DE ELECTRODOS DE CONTROL (BASE 4) DE UN TRANSMISOR SEMICONDUCTOR SE CONTROLA MEDIANTE UN CAPACITADOR (7) Y PORTADORES QUE HAN SIDO GENERADOS POR ESCITACION DE LA LUZ SE ALMACENAN EN LA REGION DE ELECTRODOS DE CONTROL. EN LA OPERACION DE LECTURA, UNA SEÑAL DEPENDIENTE DE UN VOLTAJER GENERADO POR LOS PORTADORES ALMACENADOS ES LEIDO A PARTIR DE UN AREA PRINCIPAL DE ELECTRODOS (EMISOR 8) DEL TRANSISTOR. EN LA OPERACION DE RENOVACION, LOS PORTADORES ALMACENADOS EN LA REGION DE CONTROL DE ELECTRODOS (4) SON ELIMINADOS. UNA REGION SEMICONDUCTORA (EMISOR 8'') DEL MISMO TIPO DE CONDUCTIVIDAD QUE LA REGION PRINCIPAL DE ELECTRODO (EMISOR 8), SE CONSTITUYE EN LA REGION DE CONTROL DE ELECTRODOS (8) POR SEPARADO DE LA REGION PRINCIPAL DE ELCTRODOS (8).
ES86308864T 1985-11-13 1986-11-13 Dispositivo de conversion fotoelectrica. Expired - Lifetime ES2044838T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60252653A JPH0654957B2 (ja) 1985-11-13 1985-11-13 光電変換装置

Publications (1)

Publication Number Publication Date
ES2044838T3 true ES2044838T3 (es) 1994-01-16

Family

ID=17240346

Family Applications (1)

Application Number Title Priority Date Filing Date
ES86308864T Expired - Lifetime ES2044838T3 (es) 1985-11-13 1986-11-13 Dispositivo de conversion fotoelectrica.

Country Status (7)

Country Link
US (1) US4751559A (es)
EP (1) EP0226338B1 (es)
JP (1) JPH0654957B2 (es)
AT (1) ATE93653T1 (es)
CA (1) CA1282172C (es)
DE (1) DE3688928T2 (es)
ES (1) ES2044838T3 (es)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07120767B2 (ja) * 1986-09-19 1995-12-20 キヤノン株式会社 光電変換装置
US4866293A (en) * 1986-12-09 1989-09-12 Canon Kabushiki Kaisha Photoelectric converting apparatus to prevent the outflow of excess carriers
US4879470A (en) * 1987-01-16 1989-11-07 Canon Kabushiki Kaisha Photoelectric converting apparatus having carrier eliminating means
JPH07120770B2 (ja) * 1987-07-03 1995-12-20 キヤノン株式会社 光電変換装置
JPS6442992A (en) * 1987-08-08 1989-02-15 Olympus Optical Co Solid-state image pickup device
US5040041A (en) * 1988-10-20 1991-08-13 Canon Kabushiki Kaisha Semiconductor device and signal processing device having said device provided therein
US5262870A (en) * 1989-02-10 1993-11-16 Canon Kabushiki Kaisha Image sensor in which reading and resetting are simultaneously performed
EP0433007B1 (en) * 1989-12-14 1997-03-12 Canon Kabushiki Kaisha Photoelectric converting device with improved resetting transistor and information processing apparatus utilizing the same
JP2878376B2 (ja) * 1990-02-28 1999-04-05 キヤノン株式会社 光電変換装置
US5260560A (en) * 1990-03-02 1993-11-09 Canon Kabushiki Kaisha Photoelectric transfer device
JPH0421281A (ja) * 1990-05-16 1992-01-24 Olympus Optical Co Ltd 固体撮像装置
JP2557750B2 (ja) * 1991-02-27 1996-11-27 三洋電機株式会社 光半導体装置
JP3135283B2 (ja) * 1991-06-27 2001-02-13 キヤノン株式会社 絶対値検出用信号処理回路装置
JPH05335615A (ja) * 1992-05-27 1993-12-17 Canon Inc 光電変換装置
US5453611A (en) * 1993-01-01 1995-09-26 Canon Kabushiki Kaisha Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip
EP0627847B1 (en) 1993-05-28 2001-04-11 Canon Kabushiki Kaisha Photoelectric conversion device
JPH0818093A (ja) * 1994-06-30 1996-01-19 Sony Corp 半導体受光素子及び半導体装置並びにそれらの作製方法
JP2696676B2 (ja) * 1994-12-26 1998-01-14 京セラ株式会社 イメージセンサーの出力装置
JPH09129864A (ja) 1995-10-30 1997-05-16 Canon Inc 半導体装置及びそれを用いた半導体回路、相関演算装置、信号処理システム
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
TW421962B (en) 1997-09-29 2001-02-11 Canon Kk Image sensing device using mos type image sensing elements
JP3467013B2 (ja) * 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
WO2002027763A2 (en) 2000-09-25 2002-04-04 Foveon, Inc. Active pixel sensor with noise cancellation
JP5818455B2 (ja) 2011-02-17 2015-11-18 キヤノン株式会社 固体撮像装置およびその製造方法
JP5893550B2 (ja) 2012-04-12 2016-03-23 キヤノン株式会社 撮像装置及び撮像システム

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660667A (en) * 1970-06-22 1972-05-02 Rca Corp Image sensor array in which each element employs two phototransistors one of which stores charge
US3911269A (en) * 1971-03-20 1975-10-07 Philips Corp Circuit arrangement having at least one circuit element which is energised by means of radiation and semiconductor device suitable for use in such a circuit arrangement
JPS56163585A (en) * 1980-05-17 1981-12-16 Semiconductor Res Found Semiconductor memory
FR2494044A1 (fr) * 1980-11-12 1982-05-14 Thomson Csf Phototransistor a heterojonction en technologie planar et procede de fabrication d'un tel phototransistor
JPS5795771A (en) * 1980-12-05 1982-06-14 Fuji Photo Film Co Ltd Solid-state image pickup device
JPS59108344A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像素子
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter

Also Published As

Publication number Publication date
CA1282172C (en) 1991-03-26
JPS62113468A (ja) 1987-05-25
US4751559A (en) 1988-06-14
DE3688928D1 (de) 1993-09-30
DE3688928T2 (de) 1994-01-05
JPH0654957B2 (ja) 1994-07-20
EP0226338A1 (en) 1987-06-24
EP0226338B1 (en) 1993-08-25
ATE93653T1 (de) 1993-09-15

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