SE8003729L - Vmos/bipoler effektomkopplingsanordning - Google Patents

Vmos/bipoler effektomkopplingsanordning

Info

Publication number
SE8003729L
SE8003729L SE8003729A SE8003729A SE8003729L SE 8003729 L SE8003729 L SE 8003729L SE 8003729 A SE8003729 A SE 8003729A SE 8003729 A SE8003729 A SE 8003729A SE 8003729 L SE8003729 L SE 8003729L
Authority
SE
Sweden
Prior art keywords
vmos
bipoler
connection device
power connection
collector
Prior art date
Application number
SE8003729A
Other languages
Unknown language ( )
English (en)
Inventor
R H Baker
Original Assignee
Exxon Research Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research Engineering Co filed Critical Exxon Research Engineering Co
Publication of SE8003729L publication Critical patent/SE8003729L/sv

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Bipolar Transistors (AREA)
SE8003729A 1979-05-21 1980-05-19 Vmos/bipoler effektomkopplingsanordning SE8003729L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/040,991 US4329705A (en) 1979-05-21 1979-05-21 VMOS/Bipolar power switching device

Publications (1)

Publication Number Publication Date
SE8003729L true SE8003729L (sv) 1980-11-22

Family

ID=21914119

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8003729A SE8003729L (sv) 1979-05-21 1980-05-19 Vmos/bipoler effektomkopplingsanordning

Country Status (6)

Country Link
US (1) US4329705A (sv)
JP (1) JPS55156360A (sv)
CA (1) CA1141867A (sv)
FR (1) FR2457566A1 (sv)
GB (1) GB2050054B (sv)
SE (1) SE8003729L (sv)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8001560A (nl) * 1980-03-17 1981-10-16 Philips Nv Stroomstabilisator opgebouwd met veldeffekttransistor van het verrijkingstype.
DD154049A1 (de) * 1980-10-30 1982-02-17 Siegfried Wagner Steuerbares halbleiterbauelement
FR2505102B1 (fr) * 1981-04-29 1986-01-24 Radiotechnique Compelec Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree
FR2513016A1 (fr) * 1981-09-14 1983-03-18 Radiotechnique Compelec Transistor v mos haute tension, et son procede de fabrication
JPS58212173A (ja) * 1982-04-01 1983-12-09 株式会社東芝 制御装置を備えたバイポ−ラ・トランジスタ装置
JPS59231862A (ja) * 1983-06-13 1984-12-26 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
JPS6097669A (ja) * 1983-11-02 1985-05-31 Hitachi Ltd 半導体集積回路装置
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain
US5038051A (en) * 1984-05-08 1991-08-06 The United States Of America As Represented By The Secretary Of The Navy Solid state modulator for microwave transmitters
US5162877A (en) * 1987-01-27 1992-11-10 Fujitsu Limited Semiconductor integrated circuit device and method of producing same
JPS63213370A (ja) * 1987-02-28 1988-09-06 Nippon Denso Co Ltd 電力用トランジスタの保護回路
KR930008899B1 (ko) * 1987-12-31 1993-09-16 금성일렉트론 주식회사 트랜칭(trenching)에 의한 바이-씨모스(Bi-CMOS)제조방법
DE3838355A1 (de) * 1988-11-11 1990-05-17 Fraunhofer Ges Forschung Vertikaltransistoranordnung
FR2725307B1 (fr) * 1994-09-30 1996-12-20 Sgs Thomson Microelectronics Composant semiconducteur d'alimentation, de recirculation et de demagnetisation d'une charge selfique
EP0709962B1 (en) * 1994-10-31 2002-10-02 Hewlett-Packard Company, A Delaware Corporation System for suppressing power transients when connecting a disk drive in an operating RAID system
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
US5969378A (en) * 1997-06-12 1999-10-19 Cree Research, Inc. Latch-up free power UMOS-bipolar transistor
US6429481B1 (en) 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
GB2354879B (en) * 1999-08-11 2004-05-12 Mitel Semiconductor Ltd A semiconductor device
US6597210B2 (en) * 2001-10-03 2003-07-22 Bruce W. Carsten Apparatus and method for control and driving BJT used as controlled rectifier
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
EP2230684B1 (de) * 2003-07-08 2013-10-30 Infineon Technologies AG Herstellungsverfahren für integrierte Schaltungsanordnung mit niederohmigen Kontakten
JP2010118548A (ja) * 2008-11-13 2010-05-27 Mitsubishi Electric Corp 半導体装置
US9634664B2 (en) * 2013-04-05 2017-04-25 Applied Wireless Identifications Group, Inc. Over-current and/or over-voltage protection circuit
US9935628B2 (en) * 2015-11-10 2018-04-03 Analog Devices Global FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3512012A (en) * 1965-11-16 1970-05-12 United Aircraft Corp Field effect transistor circuit
NL152708B (nl) * 1967-02-28 1977-03-15 Philips Nv Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode.
US3609479A (en) * 1968-02-29 1971-09-28 Westinghouse Electric Corp Semiconductor integrated circuit having mis and bipolar transistor elements
US3553541A (en) * 1969-04-17 1971-01-05 Bell Telephone Labor Inc Bilateral switch using combination of field effect transistors and bipolar transistors
US3877059A (en) * 1973-01-02 1975-04-08 Motorola Inc Single diffused monolithic darlington circuit and method of manufacture thereof
DE2311340C2 (de) * 1973-03-07 1974-04-04 Claude 8000 Muenchen Frantz Schaltung zur Verkürzung der Einschaltzeit von induktiven Verbrauchern
US3879619A (en) * 1973-06-26 1975-04-22 Ibm Mosbip switching circuit
JPS5140887A (sv) * 1974-10-04 1976-04-06 Hitachi Ltd
FR2302594A1 (fr) * 1975-02-28 1976-09-24 Radiotechnique Compelec Dispositif semi-conducteur integre
US4072981A (en) * 1975-03-25 1978-02-07 Texas Instruments Incorporated Fast switching Darlington circuit
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
US4095252A (en) * 1976-12-27 1978-06-13 National Semiconductor Corporation Composite jfet-bipolar transistor structure
US4145703A (en) * 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor
US4119996A (en) * 1977-07-20 1978-10-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Complementary DMOS-VMOS integrated circuit structure
FR2422258A1 (fr) * 1978-01-19 1979-11-02 Radiotechnique Compelec Dispositif semiconducteur monolithique a transistors de types mos et bipolaire
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device

Also Published As

Publication number Publication date
GB2050054B (en) 1983-08-03
JPS55156360A (en) 1980-12-05
GB2050054A (en) 1980-12-31
CA1141867A (en) 1983-02-22
FR2457566A1 (fr) 1980-12-19
US4329705A (en) 1982-05-11

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