ES2038987T3 - Dispositivo semiconductor metalizado que incluye una capa interfacial. - Google Patents

Dispositivo semiconductor metalizado que incluye una capa interfacial.

Info

Publication number
ES2038987T3
ES2038987T3 ES198787302913T ES87302913T ES2038987T3 ES 2038987 T3 ES2038987 T3 ES 2038987T3 ES 198787302913 T ES198787302913 T ES 198787302913T ES 87302913 T ES87302913 T ES 87302913T ES 2038987 T3 ES2038987 T3 ES 2038987T3
Authority
ES
Spain
Prior art keywords
semiconductor device
device including
interface layer
metallic semiconductor
semiconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES198787302913T
Other languages
English (en)
Inventor
Daniel Brasen
Ronald Howard Willens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of ES2038987T3 publication Critical patent/ES2038987T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

ESTRUCTURAS DE CAPAS AMORFAS ALTERNATIVAS DE TITANIO Y UN MATERIAL SEMICONDUCTOR SIRVEN COMO CAPAS INTERFACIALES EFECTIVAS ENTRE UN MATERIAL AISLANTE O SEMICONDUCTOR Y UN MATERIAL DE METALIZACION DE ALUMINIO EN DISPOSITIVOS SEMICONDUCTORES. TALES ESTRUCTURAS SIRVEN EFICAZMENTE PARA MINIMIZAR LA INTERDIFUSION DURANTE LA FABRICACION DEL DISPOSITIVO SIN AUMENTO INDEBIDO DE LA RESISTENCIA DE CONTACTO ELECTRICO DURANTE LA OPERACION DEL DISPOSITIVO.
ES198787302913T 1986-04-11 1987-04-03 Dispositivo semiconductor metalizado que incluye una capa interfacial. Expired - Lifetime ES2038987T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/850,978 US4725877A (en) 1986-04-11 1986-04-11 Metallized semiconductor device including an interface layer

Publications (1)

Publication Number Publication Date
ES2038987T3 true ES2038987T3 (es) 1993-08-16

Family

ID=25309619

Family Applications (1)

Application Number Title Priority Date Filing Date
ES198787302913T Expired - Lifetime ES2038987T3 (es) 1986-04-11 1987-04-03 Dispositivo semiconductor metalizado que incluye una capa interfacial.

Country Status (7)

Country Link
US (1) US4725877A (es)
EP (1) EP0243024B1 (es)
JP (1) JP2608283B2 (es)
KR (1) KR950007351B1 (es)
CA (1) CA1258718A (es)
DE (1) DE3784757T2 (es)
ES (1) ES2038987T3 (es)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2552159B2 (ja) * 1987-02-02 1996-11-06 セイコーエプソン株式会社 半導体装置及びその製造方法
US4963510A (en) * 1987-11-02 1990-10-16 Texas Instruments Incorporated Method and apparatus for providing interconnection between metallization layers on semiconductors devices
US4873565A (en) * 1987-11-02 1989-10-10 Texas Instruments Incorporated Method and apparatus for providing interconnection between metallization layers on semiconductor devices
KR920008886B1 (ko) * 1989-05-10 1992-10-10 삼성전자 주식회사 디램셀 및 그 제조방법
US5252382A (en) * 1991-09-03 1993-10-12 Cornell Research Foundation, Inc. Interconnect structures having patterned interfaces to minimize stress migration and related electromigration damages
US6081034A (en) * 1992-06-12 2000-06-27 Micron Technology, Inc. Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer
JP3159561B2 (ja) * 1993-03-29 2001-04-23 ローム株式会社 結晶性薄膜用電極
US5439731A (en) * 1994-03-11 1995-08-08 Cornell Research Goundation, Inc. Interconnect structures containing blocked segments to minimize stress migration and electromigration damage
US5935462A (en) * 1994-10-24 1999-08-10 Matsushita Electric Industrial Co., Ltd. Repair of metal lines by electrostatically assisted laser ablative deposition
US5683601A (en) * 1994-10-24 1997-11-04 Panasonic Technologies, Inc. Laser ablation forward metal deposition with electrostatic assisted bonding
US6060127A (en) * 1998-03-31 2000-05-09 Matsushita Electric Industrial Co., Ltd. Mechanically restricted laser deposition
US6180912B1 (en) 1998-03-31 2001-01-30 Matsushita Electric Industrial Co., Ltd. Fan-out beams for repairing an open defect
US7554829B2 (en) 1999-07-30 2009-06-30 Micron Technology, Inc. Transmission lines for CMOS integrated circuits
JP2002026134A (ja) * 2000-07-12 2002-01-25 Seiko Epson Corp 半導体集積回路の製造方法及びこの方法により製造した半導体集積回路
US7082838B2 (en) * 2000-08-31 2006-08-01 Tdk Corporation Extraordinary piezoconductance in inhomogeneous semiconductors
US8026161B2 (en) 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US6767795B2 (en) * 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6893984B2 (en) * 2002-02-20 2005-05-17 Micron Technology Inc. Evaporated LaA1O3 films for gate dielectrics
US7045430B2 (en) * 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US7589029B2 (en) * 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7205218B2 (en) 2002-06-05 2007-04-17 Micron Technology, Inc. Method including forming gate dielectrics having multiple lanthanide oxide layers
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US7101813B2 (en) * 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
EP1684352B1 (en) * 2005-01-21 2008-09-17 STMicroelectronics S.r.l. Phase-change memory device and manufacturing process thereof
US7662729B2 (en) * 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3657029A (en) * 1968-12-31 1972-04-18 Texas Instruments Inc Platinum thin-film metallization method
US3881884A (en) * 1973-10-12 1975-05-06 Ibm Method for the formation of corrosion resistant electronic interconnections
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance
US4135292A (en) * 1976-07-06 1979-01-23 Intersil, Inc. Integrated circuit contact and method for fabricating the same
JPS5679450A (en) * 1979-11-30 1981-06-30 Mitsubishi Electric Corp Electrode and wiring of semiconductor device
JPS56165354A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS5745228A (en) * 1980-08-29 1982-03-15 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5771175A (en) * 1980-10-22 1982-05-01 Nec Corp Semiconductor device
JPS584924A (ja) * 1981-07-01 1983-01-12 Hitachi Ltd 半導体装置の電極形成方法
JPS58132962A (ja) * 1982-02-01 1983-08-08 Toshiba Corp 半導体装置
JPH0691257B2 (ja) * 1984-04-20 1994-11-14 富士通株式会社 アモルファスシリコン薄膜トランジスタ

Also Published As

Publication number Publication date
EP0243024A3 (en) 1988-04-20
US4725877A (en) 1988-02-16
CA1258718A (en) 1989-08-22
EP0243024A2 (en) 1987-10-28
KR870010625A (ko) 1987-11-30
EP0243024B1 (en) 1993-03-17
JPS62295453A (ja) 1987-12-22
KR950007351B1 (ko) 1995-07-10
JP2608283B2 (ja) 1997-05-07
DE3784757T2 (de) 1993-09-30
DE3784757D1 (de) 1993-04-22

Similar Documents

Publication Publication Date Title
ES2038987T3 (es) Dispositivo semiconductor metalizado que incluye una capa interfacial.
ES2069530T3 (es) Contactos ohmicos estables para peliculas delgadas de semiconductores ii-vi de tipo p que contengan telurio.
MX167950B (es) Metodo mejorado para separar un dispositivo conductor de menor area a partir de un area mayor de un semiconductor recubierto
KR920007199A (ko) 반도체기억장치
ATE43936T1 (de) Integrierte halbleiterschaltung mit einer aus aluminium oder einer aluminiumlegierung bestehenden kontaktleiterbahnebene und einer als diffusionsbarriere wirkenden tantalsilizidzwischenschicht.
DE3572424D1 (en) Thyristor device and process for producing it
BR8005483A (pt) Dispositivo semicondutor e tiristor semicondutor
JPS56162864A (en) Semiconductor device
IT995781B (it) Dispositivi semiconduttori
JPS52146574A (en) Semiconductor device
TW348322B (en) Power semiconductor device
IT1113687B (it) Dispositivo semiconduttore con strato policristallino munito di contatto elettrico
JPS5312281A (en) Semiconductor control rectifying element
EP0304929A3 (en) Semiconductor device having an electrode covered with a protective film
JPS55138859A (en) Multilayer wiring type semiconductor device
JPS57102069A (en) Semiconductor device
JPS57201048A (en) Semiconductor device
IT979053B (it) Circuito integrato con strati di materiale semiconduttore su un substrato isolante
JPS5541730A (en) Semiconductor device
JPS55151359A (en) Semiconductor device
JPS5468162A (en) Semiconductor device
JPS54141578A (en) Semiconductor device
JPS6428855A (en) Package for semiconductor device
JPS6417475A (en) Manufacture of mos semiconductor device
JPS5618457A (en) Semiconductor device

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 243024

Country of ref document: ES