EP3504728A4 - CAPACITIVE-COUPLING NON-VOLATILE THIN-LAYER TRANSISTOR CHAIN IN THREE-DIMENSIONAL NETWORKS - Google Patents

CAPACITIVE-COUPLING NON-VOLATILE THIN-LAYER TRANSISTOR CHAIN IN THREE-DIMENSIONAL NETWORKS Download PDF

Info

Publication number
EP3504728A4
EP3504728A4 EP17844550.8A EP17844550A EP3504728A4 EP 3504728 A4 EP3504728 A4 EP 3504728A4 EP 17844550 A EP17844550 A EP 17844550A EP 3504728 A4 EP3504728 A4 EP 3504728A4
Authority
EP
European Patent Office
Prior art keywords
capacitive
film transistor
dimensional arrays
coupled non
transistor strings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17844550.8A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3504728A1 (en
Inventor
Eli Harari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sunrise Memory Corp
Original Assignee
Sunrise Memory Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/248,420 external-priority patent/US10121553B2/en
Application filed by Sunrise Memory Corp filed Critical Sunrise Memory Corp
Publication of EP3504728A1 publication Critical patent/EP3504728A1/en
Publication of EP3504728A4 publication Critical patent/EP3504728A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1434—Memory
    • H01L2924/1435—Random access memory [RAM]
    • H01L2924/1443—Non-volatile random-access memory [NVRAM]
EP17844550.8A 2016-08-26 2017-08-25 CAPACITIVE-COUPLING NON-VOLATILE THIN-LAYER TRANSISTOR CHAIN IN THREE-DIMENSIONAL NETWORKS Pending EP3504728A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/248,420 US10121553B2 (en) 2015-09-30 2016-08-26 Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays
PCT/US2017/048768 WO2018039654A1 (en) 2016-08-26 2017-08-25 Capacitive-coupled non-volatile thin-film transistor strings in three dimensional arrays

Publications (2)

Publication Number Publication Date
EP3504728A1 EP3504728A1 (en) 2019-07-03
EP3504728A4 true EP3504728A4 (en) 2020-09-09

Family

ID=61246301

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17844550.8A Pending EP3504728A4 (en) 2016-08-26 2017-08-25 CAPACITIVE-COUPLING NON-VOLATILE THIN-LAYER TRANSISTOR CHAIN IN THREE-DIMENSIONAL NETWORKS

Country Status (5)

Country Link
EP (1) EP3504728A4 (ja)
JP (2) JP7089505B2 (ja)
KR (2) KR102513489B1 (ja)
CN (1) CN109863575B (ja)
WO (1) WO2018039654A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7203054B2 (ja) * 2017-06-20 2023-01-12 サンライズ メモリー コーポレイション ３次元ｎｏｒ型メモリアレイアーキテクチャ及びその製造方法
EP3891801A4 (en) * 2018-12-04 2022-08-24 Sunrise Memory Corporation PROCESS FOR FABRICATION OF MULTILAYERY HORIZONTAL NOR THIN FILM MEMORY STRINGS
WO2020210390A1 (en) 2019-04-09 2020-10-15 Sunrise Memory Corporation Quasi-volatile memory device with a back-channel usage
TWI747369B (zh) * 2019-07-09 2021-11-21 美商森恩萊斯記憶體公司 水平反或閘記憶體串之三維陣列製程
WO2021048928A1 (ja) * 2019-09-10 2021-03-18 キオクシア株式会社 メモリデバイス
KR20210036535A (ko) * 2019-09-26 2021-04-05 에스케이하이닉스 주식회사 반도체 장치
CN115362436A (zh) * 2020-02-07 2022-11-18 日升存储公司 准易失性系统级存储器
CN111326864B (zh) * 2020-03-13 2021-06-18 天津大学 耦合差分馈电双压缩模式贴片天线与太阳能电池一体化
JP2021150486A (ja) 2020-03-19 2021-09-27 キオクシア株式会社 半導体記憶装置
US11653500B2 (en) * 2020-06-25 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array contact structures
CN112909015B (zh) * 2021-03-08 2023-10-17 中国科学院微电子研究所 Nor型存储器件及其制造方法及包括存储器件的电子设备
KR102429142B1 (ko) * 2021-07-22 2022-08-03 란데몬 에스피. 제트 오.오. 베타 붕괴를 이용한 고도로 효과적인 온칩 진성 난수 생성기를 위한 방법 및 장치
CN113782070A (zh) * 2021-09-02 2021-12-10 西安紫光国芯半导体有限公司 自供电的非易失可编程芯片及存储装置
WO2023112236A1 (ja) * 2021-12-16 2023-06-22 キオクシア株式会社 半導体記憶装置
WO2024060021A1 (zh) * 2022-09-20 2024-03-28 华为技术有限公司 一种三维存储阵列、存储器及电子设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120085591A (ko) * 2011-01-24 2012-08-01 김진선 3차원 비휘발성 메모리 소자, 그 동작 방법 및 그 제조 방법
US20160086970A1 (en) * 2014-09-23 2016-03-24 Haibing Peng Three-dimensional non-volatile nor-type flash memory

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525529A (en) * 1994-11-16 1996-06-11 Texas Instruments Incorporated Method for reducing dopant diffusion
JP3543905B2 (ja) * 1997-03-19 2004-07-21 シャープ株式会社 半導体記憶装置
US6363389B1 (en) * 1998-09-24 2002-03-26 International Business Machines Corporation Technique for creating a unique quasi-random row identifier
JP2000285016A (ja) 1999-03-30 2000-10-13 Sanyo Electric Co Ltd メモリ制御回路
JP2000339978A (ja) * 1999-05-24 2000-12-08 Sony Corp 不揮発性半導体記憶装置およびその読み出し方法
US7312505B2 (en) * 2004-03-31 2007-12-25 Intel Corporation Semiconductor substrate with interconnections and embedded circuit elements
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7450433B2 (en) * 2004-12-29 2008-11-11 Sandisk Corporation Word line compensation in non-volatile memory erase operations
JP2006252624A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体記憶装置
JP2007280505A (ja) * 2006-04-06 2007-10-25 Toshiba Corp 半導体記憶装置
JP2008276858A (ja) 2007-04-27 2008-11-13 Spansion Llc 不揮発性記憶装置及びそのバイアス制御方法
KR101391881B1 (ko) * 2007-10-23 2014-05-07 삼성전자주식회사 멀티-비트 플래시 메모리 장치 및 그것의 프로그램 및 읽기방법
JP2009206451A (ja) * 2008-02-29 2009-09-10 Toshiba Corp 不揮発性半導体記憶装置、及びその製造方法
KR101559868B1 (ko) * 2008-02-29 2015-10-14 삼성전자주식회사 수직형 반도체 소자 및 이의 제조 방법.
US7898857B2 (en) * 2008-03-20 2011-03-01 Micron Technology, Inc. Memory structure having volatile and non-volatile memory portions
JP6006911B2 (ja) 2008-10-30 2016-10-12 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置
KR20100059655A (ko) * 2008-11-25 2010-06-04 삼성전자주식회사 3차원 반도체 장치 및 그 동작 방법
US8148763B2 (en) * 2008-11-25 2012-04-03 Samsung Electronics Co., Ltd. Three-dimensional semiconductor devices
KR101532366B1 (ko) * 2009-02-25 2015-07-01 삼성전자주식회사 반도체 기억 소자
JP2010251572A (ja) * 2009-04-16 2010-11-04 Toshiba Corp 不揮発性半導体記憶装置
JP2011028540A (ja) 2009-07-27 2011-02-10 Renesas Electronics Corp 情報処理システム、キャッシュメモリの制御方法、プログラム及びコンパイラ
KR101137929B1 (ko) * 2010-05-31 2012-05-09 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조 방법
US8603890B2 (en) * 2010-06-19 2013-12-10 Sandisk Technologies Inc. Air gap isolation in non-volatile memory
US8527695B2 (en) * 2011-07-29 2013-09-03 The Boeing Company System for updating an associative memory
KR102072449B1 (ko) * 2012-06-01 2020-02-04 삼성전자주식회사 불휘발성 메모리 장치를 포함하는 저장 장치 및 그것의 리페어 방법
WO2015025357A1 (ja) * 2013-08-19 2015-02-26 株式会社 東芝 メモリシステム
KR102432754B1 (ko) 2013-10-21 2022-08-16 에프엘씨 글로벌 리미티드 최종 레벨 캐시 시스템 및 이에 대응하는 방법
CN105870121B (zh) * 2014-12-28 2018-09-21 苏州诺存微电子有限公司 三维非易失性nor型闪存
US9356105B1 (en) * 2014-12-29 2016-05-31 Macronix International Co., Ltd. Ring gate transistor design for flash memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120085591A (ko) * 2011-01-24 2012-08-01 김진선 3차원 비휘발성 메모리 소자, 그 동작 방법 및 그 제조 방법
US20160086970A1 (en) * 2014-09-23 2016-03-24 Haibing Peng Three-dimensional non-volatile nor-type flash memory

Also Published As

Publication number Publication date
KR20190057065A (ko) 2019-05-27
JP7379593B2 (ja) 2023-11-14
WO2018039654A4 (en) 2018-04-19
CN109863575B (zh) 2024-01-30
WO2018039654A1 (en) 2018-03-01
KR102626193B1 (ko) 2024-01-18
KR20230042417A (ko) 2023-03-28
JP2019526934A (ja) 2019-09-19
EP3504728A1 (en) 2019-07-03
KR102513489B1 (ko) 2023-03-23
JP7089505B2 (ja) 2022-06-22
CN109863575A (zh) 2019-06-07
JP2022123017A (ja) 2022-08-23

Similar Documents

Publication Publication Date Title
EP3504728A4 (en) CAPACITIVE-COUPLING NON-VOLATILE THIN-LAYER TRANSISTOR CHAIN IN THREE-DIMENSIONAL NETWORKS
EP3635782A4 (en) STORAGE ARRAYS
EP3635783A4 (en) STORAGE ARRAYS
EP3161832A4 (en) Reference architecture in a cross-point memory
EP3392655A4 (en) Immunochromatographic kit
EP3152663A4 (en) Transparent array migration
GB2548721B (en) Thin-film transistor array substrate
EP3109942A4 (en) Array antenna
EP3468667A4 (en) TRAJECTOR OPTIMIZATION IN RADIATION THERAPY THROUGH SECTIONING
EP2943959A4 (en) Nonvolatile memory array logic
EP3563166A4 (en) ANTENNA ARRAYS
EP3172765A4 (en) Through array routing for non-volatile memory
EP3458678A4 (en) MULTIPLE INTERVALS MATRIX TOOL
EP3546337A4 (en) FLOATING STRUCTURE
EP3066571A4 (en) Cache memory budgeted by ways on memory access type
EP3465291A4 (en) MICRO LENS GROUP DIFFUSORS
EP3507808A4 (en) MEMORY NETWORKS
EP3265848A4 (en) Three dimensional antenna with floating fence
EP3268864A4 (en) HIGH-PERFORMANCE NON-VOLATILE MEMORY MODULE
EP3685439A4 (en) THREE-DIMENSIONAL MEMORY MATRICES
EP3545623A4 (en) TRANSISTOR CELL
EP3676871A4 (en) THREE-DIMENSIONAL MEMORY ARRAYS
EP3367943A4 (en) FOLDABLE 2-D CMUT-ON CMOS ARRAYS
DK3298668T3 (da) På jorden anbragt kanal
EP3544073A4 (en) ORGANIC ELECTROLUMINESCENT ELEMENT

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20190325

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Free format text: PREVIOUS MAIN CLASS: H01L0021020000

Ipc: H01L0027115780

A4 Supplementary search report drawn up and despatched

Effective date: 20200812

RIC1 Information provided on ipc code assigned before grant

Ipc: G11C 11/34 20060101ALI20200806BHEP

Ipc: H01L 27/11568 20170101ALI20200806BHEP

Ipc: H01L 29/792 20060101ALI20200806BHEP

Ipc: H01L 27/11578 20170101AFI20200806BHEP

Ipc: G11C 16/04 20060101ALI20200806BHEP

Ipc: G11C 16/06 20060101ALI20200806BHEP

RAP3 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SUNRISE MEMORY CORPORATION

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230426