EP3391390A1 - Céramique à ctn, composant électronique de limitation du courant de mise sous tension et procédé de fabrication d'un composant électronique - Google Patents

Céramique à ctn, composant électronique de limitation du courant de mise sous tension et procédé de fabrication d'un composant électronique

Info

Publication number
EP3391390A1
EP3391390A1 EP16822388.1A EP16822388A EP3391390A1 EP 3391390 A1 EP3391390 A1 EP 3391390A1 EP 16822388 A EP16822388 A EP 16822388A EP 3391390 A1 EP3391390 A1 EP 3391390A1
Authority
EP
European Patent Office
Prior art keywords
electronic component
component
functional layer
inrush current
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP16822388.1A
Other languages
German (de)
English (en)
Inventor
Hermann GRÜNBICHLER
Manfred Schweinzger
Franz Rinner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Publication of EP3391390A1 publication Critical patent/EP3391390A1/fr
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H01C7/046—Iron oxides or ferrites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H01C7/045—Perovskites, e.g. titanates
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/016—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on manganites
    • C—CHEMISTRY; METALLURGY
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
    • C04B35/62675—Thermal treatment of powders or mixtures thereof other than sintering characterised by the treatment temperature
    • C—CHEMISTRY; METALLURGY
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62695—Granulation or pelletising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1413—Terminals or electrodes formed on resistive elements having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/13—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material current responsive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3213—Strontium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
    • C04B2235/3263—Mn3O4
    • C—CHEMISTRY; METALLURGY
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
    • C04B2235/602—Making the green bodies or pre-forms by moulding
    • C—CHEMISTRY; METALLURGY
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C—CHEMISTRY; METALLURGY
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density

Definitions

  • the invention relates to an NTC ceramic, an electronic component for inrush current limiting and a method for producing an electronic component.
  • ABS Applications
  • the DC / DC converter on the one hand requires a lot of space and on the other hand contains expensive semiconductors (relays or MOSFETs).
  • An object to be solved is to provide an improved NTC ceramic and an improved electronic component and a method for producing the component.
  • an NTC ceramic is specified.
  • the NTC ceramic is designed for use in an electronic component, for example in a multilayer NTC component and / or in a monolithic NTC component.
  • the device is preferably an inrush current limiter (ICL).
  • the NTC ceramic has an electrical resistance in the mQ range at a temperature of 25 ° C. Alternatively or additionally, the NTC ceramic has an electrical resistance in the mQ range at room temperature. Room temperature is the temperature usually used in
  • Resistor preferably describes the electrical
  • Temperature has an electrical resistance of less than or equal to 30 mQ, preferably less than 20 mQ, for example 14 mQ, 15 mQ, 16 mQ or 17 mQ.
  • the NTC ceramic exhibits
  • the NTC ceramic is particularly well suited for use in a current-limiting device with a high current load.
  • the NTC ceramic has the composition La (i- X ) EA ( X ) Mn ⁇ iabc) Fe ( a ) CO ( b ) Ni (c) O (3 ⁇ 6).
  • EA denotes an alkaline earth element.
  • the alkaline earth element is magnesium, calcium, strontium or barium
  • ⁇ denotes the deviation from the stoichiometric oxygen ratio (oxygen excess or
  • an electronic device In one aspect, an electronic device
  • the electronic component is preferably an inrush current limiter.
  • the component has at least one functional layer or active layer.
  • Functional layer has the NTC ceramic described above.
  • the functional layer preferably consists of the NTC ceramic.
  • the component is characterized by its high electrical conductivity and sufficient NTC effect (B value) due to the NTC ceramic. This will be a simple and
  • Due to the low electrical resistance in the mQ range can be achieved in particular that a sufficiently high inrush current of an electrical load, which is connected for example in a corresponding application in series with the electronic component is provided, but is limited so far that, for example the electrical voltage during the switch-on for the electrical supply of other important electrical
  • Component is the voltage dip during startup of the consumer compared to a consumer without
  • Component preferably reduced by about I V. This can in the application of the electronic component in the automotive field, especially when used as
  • Inrush current limiters for electric starter motors in motor vehicles may be advantageous or essential If the inrush current is not sufficiently or adequately limited, a vehicle electrical system voltage may decrease to such an extent that further safety-related
  • ABS and ESP can no longer be supplied with the intended electrical voltage. In this sense the electronic component contributes directly to safety and / or energy efficiency
  • the specific electrical resistance of the at least one functional layer in a ground state of the electronic component is between 0.1 and 2.0 ⁇ cm.
  • the specific electrical resistance of the at least one functional layer in a ground state of the electronic component is preferably between 0.1 .mu.m and 1.0 .mu.m, for example 0.3 .mu.cm.
  • the ground state describes a temperature of
  • the ground state may be an unloaded state in which, for example, no electrical power is applied to the
  • Component is created, act.
  • the component has a thickness of less than or equal to 1.0 mm, for example 0.5 mm. This becomes a compact and small component
  • the device is a monolithic device.
  • the device is disc-shaped or platelet-shaped.
  • Component may be formed in the form of a substrate.
  • the device has exactly one functional layer.
  • the functional layer has a thickness of less than or equal to 1.0 mm, for example 0.3 mm.
  • the Functional layer is arranged a metallization.
  • the metallization preferably has silver.
  • the metallization may also include copper or gold.
  • a contacting of the device via a metallic element such as a tongue done.
  • the tongue may be soldered to an outside of the device. This can be a Einschaltstrombegrenzer in the form of a compact and inexpensive monolithic
  • the device is a
  • the component has a multiplicity of functional layers arranged one above the other in a stack, for example 10, 30 or 50
  • the device has a plurality of first inner electrodes and second
  • the first internal electrodes are electrically conductively connected to a first external contact and the second internal electrodes are connected to a second external contact.
  • the external contacts have silver.
  • External contacts can also have copper or gold.
  • the functional layers are arranged and designed, in particular, the functional layers have such a small resistivity that the first and the second external contact are electrically conductively connected to each other in a ground state as well as in a hot state of the electronic component via the functional layers.
  • the hot state indicates a state of the device at a temperature higher than that of the device electronic component in the ground state.
  • the temperature range between the ground state and the hot state may span or extend over any temperature range between -55 ° C and + 180 ° C.
  • the temperature range may preferably be
  • the electronic component is an NTC component, that is, a heat-conducting component with a negative
  • the hot state of the electronic component preferably describes a state of the electronic component that has been heated, for example, by an applied electrical power.
  • the hot state is preferably still a stationary temperature state of the component.
  • Component can be compared to conventional NTC devices, which have an electrical resistance in the ⁇ or kQ range in a ground state at 25 ° C, that an inrush of an electrical load, which, for example in a corresponding application in series with the electronic component is switched, as far as is limited, that the electrical voltage during
  • the component is thermally connected at least to a heat sink. This can be for
  • the heat sink has, for example, copper.
  • the first heat sink has, for example, copper.
  • Heat sink a copper sheet.
  • Component and / or the NTC ceramic are also applicable to the process and vice versa.
  • the method comprises the following steps:
  • Ceramic powder For example, La 2 Ü 3, SrCC> 3 and Mn 3Ü 4 are provided and weighed in stoichiometric amounts. But also other materials for that
  • Ceramic powders are conceivable.
  • the powder is heated to 900 ° C for six hours.
  • the CO 2 can escape and the individual raw materials react to the desired chemical compound.
  • a binder is preferably added to produce the granules.
  • cylindrical components are produced by dry pressing. Burnout of the binder (decarburization).
  • the binder is preferably burned out at 400 to 500 ° C.
  • Inrush current can be used. Due to the very high electrical conductivity of the functional layer of the
  • the inrush current limiter can be designed as a cost-effective, monolithic device (slices, plates, etc.).
  • the method produces the device described above. All features described in connection with the component and / or the NTC ceramic also apply to the method and vice versa.
  • the method comprises the following steps:
  • the green sheets preferably have the above-described NTC ceramic material.
  • the green sheets are foils for an NTC ceramic or NTC ceramic layer to be produced.
  • the green sheets are preferably layers of a raw material which, for example, is not sintered.
  • the green sheets are preferably each with at least one
  • the inner electrodes can be printed by screen printing on the green sheets, for example.
  • the stacking is preferably carried out such that the internal electrodes are each arranged between two adjacent green sheets.
  • the stack is pressed into a block.
  • the method includes, for example
  • the block becomes to singulate the block
  • the stack or the pressed block is then treated thermally.
  • thermal treatment includes decarburizing the stack or block.
  • Treat sintered The sintering is expediently carried out after decarburization.
  • - Provide the stack or block with external contacts.
  • the external contacts preferably have silver, copper or gold.
  • the method produces a component which can be used to limit the inrush current. Due to the very high electrical conductivity of the functional ⁇ layers of the device (NTC ceramic), a particularly efficient inrush current limiter can be provided.
  • a system with at least one electronic component is described.
  • the component preferably corresponds to the component described above. All the features associated with the device
  • the system can also have more than one component, for example three electronic components.
  • the plurality or the predominant components are connected in parallel with each other.
  • the system also has a
  • the system can
  • the system is configured such that a heating time, that is, the time in which an inrush current of the
  • Consumer device heats the electronic component to a stationary temperature, to an electrical
  • Start time of the consumer device is tuned.
  • the electrical starting time determines when the inrush current has dropped to the rated current of the consumer device.
  • the stationary temperature preferably represents the temperature of the above-mentioned hot state of the electronic
  • Temperature preferably alternatively or additionally one
  • the stationary temperature is preferably
  • the heating time By adjusting the heating time to the start-up time or vice versa, for example, compared to the situation in which the heating time is too short compared to the electrical starting time, damage to further electrically interacting with the system or the consumer device components can be prevented. Furthermore, by the said vote, for example, compared to the situation in which the heating time is too long compared to the electrical starting time, a
  • electrical components of the electrical system of a motor vehicle such as the ABS or ESP system designate.
  • the heating time is preferably or suitably equal to or slightly shorter than the starting time.
  • Heating time and the startup time are at least largely the same.
  • FIG. 1 shows a schematic sectional view of a
  • Figure 2 shows a schematic side view of a
  • FIG. 3 shows a schematic view of a system
  • FIG. 1 or 2 comprising a component according to FIG. 1 or 2 and a consumer device.
  • FIG. 4 shows the switch-on behavior of a
  • FIG. 1 shows a schematic sectional view of an electronic component 10.
  • the electronic component 10 is preferably an NTC component.
  • the electronic component 10 is preferably used as Inrush current limiter, in particular for electrical
  • the device 10 is a
  • the component 10 has a multiplicity of first internal electrodes 1.
  • the component 10 has a multiplicity of second internal electrodes 2.
  • the first and second internal electrodes 1, 2 are alternating
  • Internal electrodes 1, 2 are preferably similar
  • the component 10 also has a first external contact 11.
  • the first external contact 11 is at a first
  • the first internal electrodes 1 are electrically conductively connected to the first external contact 11.
  • the first external contact 11 has silver.
  • the electronic component 10 furthermore has a second external contact 12.
  • the second external contact 12 is arranged on a second side surface of the electronic component 10.
  • the second side surface is the first
  • the second internal electrodes 2 are electrically conductively connected to the second external contact 12.
  • the second external contact 12 has silver.
  • the electronic component 10 has a plurality of
  • Functional layers 3 are stacked to form a stack arranged.
  • the inner electrodes 1, 2 and the functional ⁇ layers 3 are arranged in particular alternately or alternately to a stack.
  • Internal electrodes 1, 2 is between two adjacent ones
  • the respective functional layer 3 has a ceramic
  • the functional layer 3 has an NTC ceramic.
  • the respective functional layer 3 consists of the NTC ceramic.
  • the NTC ceramic has the following
  • EA stands for an alkaline earth element, for example Mg, Ca, Sr or Ba.
  • ⁇ denotes the deviation from the stoichiometric
  • the NTC ceramic has the composition Lao. 95 Sro.osMn03 on.
  • the functional layers 3 are preferably similar or similar.
  • the respective functional layer 3 has a thickness or vertical extent (hereinafter referred to as "layer thickness")
  • Functional layers 3 is preferably between 10 ym and 100 ym or between 10 ym and 50 ym, for example 40 ym.
  • the layer thickness 3 of the respective functional layer 3 is chosen such that the respective functional layer 3 has a
  • a resistance and a current carrying capacity of the functional layer 3 can be varied and controlled by the thickness of the functional layer 3.
  • the respective functional layer 3 has a specific area or a specific cross section (hereinafter
  • the horizontal extent is determined by a width and a length of the functional layer 3.
  • the width is preferably 4.0 to 5.0 mm, for example, 4.8 mm
  • the horizontal extent of the respective functional layer 3 is chosen such that the respective functional layer 3 has a predetermined or special resistance.
  • Functional layer 3 the resistance and the current carrying capacity of the functional layer 3 are varied and controlled.
  • the electrical resistance of the respective functional layer 3 is preferably in the mQ range at a temperature of 25 ° C., for example 15 mQ or 20 mQ.
  • the functional layer 3 preferably has a very low electrical resistance and thus a very high electrical conductivity at a temperature of 25 ° C.
  • the functional layers 3 are preferably formed such that the first and the second external contact 11, 12 of the electronic component 10 both in a ground state and in a hot state (operating state) of the electronic component 10 are electrically conductively connected to each other via the functional layers 3.
  • Device 10 for example at a temperature of 25 ° C, is preferably between 0.1 and 0.2 Qcm Qcm,
  • the B value (thermistor constant) of the functional layers 3 is preferably less than 3000 K and more than 1500 K, for example 1650 to 1750 K, preferably 1700 K (see also Table 1).
  • the above-mentioned ground state preferably describes a temperature of the electronic component 10 of 25 ° C
  • the hot state preferably describes a temperature of the electronic component 10 that is greater than the temperature of the electronic component 10 in the ground state.
  • the hot state is preferably an operating state in which the electronic component 10 has reached an operating temperature.
  • the operating temperature may represent a stationary temperature, for example of the loaded device 10.
  • the ground state describes
  • the temperature range between the ground state and the hot state for example, over the
  • the temperature range between the ground state and the hot state extends over the range of -40 ° C to + 150 ° C.
  • the device 10 may thermally to a
  • Heatsink be connected.
  • the heat sink can be connected.
  • Heatsink can cause warming when starting and the
  • Peak temperature influenced or limited Peak temperature influenced or limited.
  • the electronic component 10 may be in a particularly preferred embodiment
  • Embodiment be executed in the form of a disk or a substrate ( Figure 2).
  • the device 10 in this embodiment is a
  • the component 10 has only one functional layer or active layer 3.
  • Functional layer 3 has an outer metallization
  • the external contacts 11, 12 are arranged, for example, on the opposite side surfaces of the functional layer 3. Alternatively, the external contacts 11, 12 may also be arranged on an upper side and a lower side of the functional layer 3, as shown in FIG.
  • the external contacts 11, 12 preferably have silver. An electrical contacting of the device 10 takes place for example by means of a
  • the functional layer 3 in this exemplary embodiment has, for example, a diameter of less than 15 mm, for example 10 mm.
  • the functional layer 3 preferably has a thickness of less than 0.5 mm, for example 0.1 mm, more preferably 0.3 mm. As already described in connection with Figure 1, the thickness of the functional layer 3, the resistance and the current carrying capacity of
  • Functional layer 3 varies and controlled.
  • the component 10 according to FIG. 2 has a small thickness or vertical extent than the component 10 described in connection with FIG. 1.
  • the finished component 10 with metallization and contacting has, for example, a thickness of less than or equal to 0.5 mm.
  • the specific electrical resistance of the functional layer 3 in the ground state of the electronic component 10 is, as already explained in connection with Figure 1, preferably between 0.1 and 0.2 Qcm Qcm, for example, at 0.145 Qcm (see also Table 1). This indicates the
  • Component 10 can be further reinforced by a parallel connection of a plurality of components 10 according to FIG.
  • three components 10 can be connected in parallel in order to further increase the current-carrying capacity and lower the electrical resistance.
  • the component 10 according to FIG. 2 is produced, for example, as follows. This is exemplified
  • the component 10 is produced by the so-called "mixed oxide process.” First of all, La 2 O 3 , SrCO 3 and Mn 3 O 4 are weighed in stoichiometric amounts and wet-ground
  • the powder is again mixed with water and ground until an average particle size of 0.5 ym is reached.
  • the powder is mixed with a suitable binder, so that one for dry pressing
  • the densely sintered components are then ground to size and contacted with a silver paste. Of the finished components, the resistance in the
  • Table 1 shows in particular the sintered density, the specific resistance at 25 ° C. and the B value of the respective component 10.
  • Table 1 Result values of three components according to the manufacturing method described above
  • FIG. 3 shows a schematic representation of a system 200 in which the electronic component 10 is connected and / or arranged in series with an electrical consumer device 20.
  • the system 200 is - at a common ambient temperature of the electronic component 10 and the
  • Consumer device 20 - the heating time that is, the time in which the inrush current of the consumer device 20, the electronic component 10 to a stationary
  • Temperature has heated or heated, preferably to the electrical starting time of the consumer device 20th
  • the electrical starting time determines when the inrush current of the consumer device 20 to the Rated current has fallen the same.
  • the startup time is about 50 ms.
  • the stationary temperature may, for example, describe a state in which the electrical power supplied to the device 10
  • Heat conduction and / or thermal radiation is delivered to the environment such that the temperature of the device 10 does not increase further.
  • the heating time and the electrical starting time are the same. In a further exemplary embodiment of the system 200, the heating time and the electrical starting time are in a ratio between 0.5 and 1.5 to each other.
  • the operation of the system 200 can be optimized, for example as inrush current limitation in motor vehicles, by the aforementioned tuning.
  • the system 200 may accordingly further comprise an electric power source (not explicitly shown in the figures), which is suitably configured
  • FIG. 4 shows the electrical switch-on behavior of the consumer device 20 with and without inrush current limitation.
  • the consumer device 20 is preferably an electric starter motor of a
  • the component 10 from FIG. 2 is connected in series with the load device 20.
  • the component 10 is therefore, for example, a component 10 designed as a disk with a functional layer 3 made of the NTC ceramic described above.
  • the functional layer 3 in this case has a diameter of 10 mm and a thickness of 0.1 mm.
  • other diameters and thicknesses or another structure of the component 10 for example, a structure according to Figure 1, conceivable.
  • the electric current (I) is plotted over time (see left ordinate axis). A time of 0 seconds corresponds instantaneously to the switch-on process. Furthermore, on the right-hand axis of the ordinate, the electrical voltage (U) is above the electronic component 10
  • the inrush current I is significantly higher shortly after the switch-on process, that is, for example, in the first 10 ms after the switch-on process, compared with the case of the series-connected component 10 as inrush current limitation.
  • the voltage drop shortly after the switch-on, for example, within the first 40 ms, without inrush current limit is greater than with inrush current limit.
  • the voltage U falls without
  • Inrush current limiting shortly after the switch-on from 12 V to about 6.5 V from.
  • the voltage drop during startup in comparison to a Consumer device 20 without component 10 reduced by about IV.
  • the voltage U drops shortly after the switch-on, in particular from 12 V to about 7.4 V.
  • the invention is not limited by the description with reference to the embodiments. Rather, the includes

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
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  • Thermistors And Varistors (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

L'invention concerne une céramique à CTN destinée à être utilisée dans un composant électronique (10) pour la limitation du courant de mise sous tension. La céramique à CTN possède une résistance électrique dans la plage des mΩ à une température de 25 °C et/ou à température ambiante. L'invention concerne en outre un composant électronique (10), un procédé de fabrication d'un composant électronique (10) et un système (200) comprenant au moins un composant électronique (10).
EP16822388.1A 2015-12-16 2016-12-13 Céramique à ctn, composant électronique de limitation du courant de mise sous tension et procédé de fabrication d'un composant électronique Pending EP3391390A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015121982.4A DE102015121982A1 (de) 2015-12-16 2015-12-16 NTC-Keramik, elektronisches Bauelement zur Einschaltstrombegrenzung und Verfahren zur Herstellung eines elektronischen Bauelements
PCT/EP2016/080789 WO2017102724A1 (fr) 2015-12-16 2016-12-13 Céramique à ctn, composant électronique de limitation du courant de mise sous tension et procédé de fabrication d'un composant électronique

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EP3391390A1 true EP3391390A1 (fr) 2018-10-24

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US (1) US11189404B2 (fr)
EP (1) EP3391390A1 (fr)
JP (2) JP2019504491A (fr)
KR (1) KR20180109869A (fr)
CN (2) CN108369846A (fr)
DE (1) DE102015121982A1 (fr)
TW (1) TWI726020B (fr)
WO (1) WO2017102724A1 (fr)

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JP2019504491A (ja) 2019-02-14
US20180301253A1 (en) 2018-10-18
KR20180109869A (ko) 2018-10-08
CN113053604A (zh) 2021-06-29
DE102015121982A1 (de) 2017-06-22
US11189404B2 (en) 2021-11-30
TWI726020B (zh) 2021-05-01
CN113053604B (zh) 2022-11-08
JP7475987B2 (ja) 2024-04-30
WO2017102724A1 (fr) 2017-06-22
CN108369846A (zh) 2018-08-03
TW201801101A (zh) 2018-01-01

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