EP3262674A1 - Raumtemperatur-verfahren zur herstellung elektrotechnischer dünnschichten und elektrotechnische dünnschicht - Google Patents

Raumtemperatur-verfahren zur herstellung elektrotechnischer dünnschichten und elektrotechnische dünnschicht

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Publication number
EP3262674A1
EP3262674A1 EP16720700.0A EP16720700A EP3262674A1 EP 3262674 A1 EP3262674 A1 EP 3262674A1 EP 16720700 A EP16720700 A EP 16720700A EP 3262674 A1 EP3262674 A1 EP 3262674A1
Authority
EP
European Patent Office
Prior art keywords
layers
acid
layer
thin film
electrotechnical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP16720700.0A
Other languages
German (de)
English (en)
French (fr)
Inventor
Gangadaran PUVANENDRALINGAM
Patrick Linder
Daniel LINDER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dynamic Solar Systems AG
Original Assignee
Dynamic Solar Systems AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dynamic Solar Systems AG filed Critical Dynamic Solar Systems AG
Publication of EP3262674A1 publication Critical patent/EP3262674A1/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0036—Formation of the solid electrolyte layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/022—Electrolytes; Absorbents
    • H01G9/025—Solid electrolytes
    • H01G9/028—Organic semiconducting electrolytes, e.g. TCNQ
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Definitions

  • the present invention can be generally arranged in the field of electrotechnical thin films.
  • the applicant was already active in this area, as the applications DE 2012 107 100 A1 and WO 2014 019 560 A1 illustrate.
  • the general, technical background and the known measures and methods are meaningfully reflected in the state of the art researched under these applications.
  • DE 2 004 076 A1 or DE 31 06 654 A1 for small devices disclose combinations of PV modules with thermal generators, capacitors or accumulators.
  • Screen printed CdS / CdTe solar cells have been known since 1980, for example, from the Japanese Journal of Applied Physics, Volume 19, Number 4, 'Screen printed thin film CdS / CdTe solar cell'.
  • the present invention relates to methods for producing electrotechnical thin films and electrotechnical thin films according to the preamble of the independent claims.
  • Generic thin films are known for example from DE 37 84 645 T2: A preceramic polymer is presented in dispersed form in organic solution, applied and cured by drying. However, a disadvantage of these layers is that the cured layer then has to be baked at 200 degrees Celsius to 400 degrees Celsius for about one day to obtain a ceramic layer having semiconductive and / or conductive properties. It turns out, however, that such ceramic layers can also be used as dielectric layers and doped, dielectric layers. However, this document provides PVD or CVD processes for additional electrode or cap layers, which disadvantageously require vacuum chambers and cause high equipment costs.
  • WO 2011 021 982 A1 discloses a method for producing an electrode layer, in which carbon nanotubes in solution are exposed to metal clusters and then deposited on a membrane filter and dried. The deposited conglomerate of carbon nanotubes can then be removed as a thin layer.
  • the disadvantage of this document then provides the combination with acidic polymer electrolyte, whereby a layer composite is obtained with partially liquid electrolyte.
  • the charge-discharge curves of the corresponding catalyst show a significant decrease in the amount of energy that can be stored with each cycle, which speaks for electrochemical storage processes with side reactions.
  • the reversibility of the electrochemical storage processes is not more than 90%, so that after a few charging cycles, the storable amount of energy already drops significantly.
  • Object of the present invention was therefore to overcome the disadvantages of the prior art and to provide a method and a procedural, electrotechnical thin film, which despite industrial process control and large-scale fabrication can provide thin, stable, and in their electrotechnical Properties are nearly 100% reversible.
  • a room temperature method for producing electrotechnical thin layers wherein electrically conductive and / or semiconducting, inorganic agglomerates are presented in a dispersion in a flat surface and cured to form a layer, characterized in that
  • the curing is accelerated by applying at least one reagent.
  • a procedural, electrotechnical thin film is characterized in that
  • the thin film has a thickness of 5 to 50 microns
  • the thin film has a resistance of 30 + - 15 ohms per square centimeter
  • the thin film has an inorganic content of at least 80 weight percent, balance consisting of inorganic adjuvants and auxiliary substances and non-aromatic, polymeric additives. DESCRIPTION OF THE INVENTION AND ADVANTAGEOUS CHARACTERISTICS
  • a 'room temperature method' denotes a process control at the usual ambient temperature.
  • a temperature is around 20 degrees Celsius.
  • temperatures of 10 degrees Celsius to 50 or 60 degrees Celsius are possible in factories.
  • the decisive factor here is merely that the process can be carried out under such conditions without separate control of the room temperature.
  • Electrotechnical thin films' in the context of the present invention Layers with a thickness in the micrometer range, ie from 0, 1 microns to several hundred micrometers. Conventional layer thicknesses in electrotechnical thin layers are often in the range of 5 to 50 micrometers, since such dimensions can be reliably set even with process controls controlled at relatively large intervals.
  • Electrotechnical thin films are electrically conductive and / or semiconductive layers of the above-described thickness and can be used in a composite layer as a contact or as a functional layer. Pure ceramic thin films, however, would only be usable as an insulator. For possible uses of semiconducting and / or conducting layers, reference is made to the technical field and the documents and examples cited therein.
  • a process is desired in which electrically conductive and / or semiconducting, inorganic agglomerates are presented in a planar manner in a dispersion and cured to form a layer.
  • 'inorganic agglomerates' are particles which in their inorganic composition comprise carbon, at most in elemental form or in an inorganic compound comprising carbide, graphite, carbon black or oxide.
  • the size of the agglomerates influences the thickness of the layer: If 0.5 micron large precipitates of a metal oxide in 2 to 3-fold layer sequence presented, a layer of 1, 5 microns thick with a uniformity of + - 0.5 microns is obtained.
  • the curing is accelerated by applying at least one reagent.
  • a reagent curing times can be significantly reduced and industrially necessary, short process steps can be achieved.
  • the reagent actively intervenes in the curing process, in which solvent is bound and / or the crosslinking reaction at the contact points of the agglomerates with each other / to the subsequent substrate layer is accelerated.
  • the process is preferably characterized in that the dispersion is initially introduced as an aqueous-moist to aqueous-wet dispersion. Water is always available as dispersing and solvent and readily available industrially. Compared with established organic solvents, it offers the advantage that it does not require any precautions in terms of toxicology.
  • the method is characterized in that an acid halide is used as the reagent.
  • an acid halide is used as the reagent.
  • a slightly moist, basic dispersion of a metal phase was deposited on a carrier in a thin layer.
  • the layer was purged with thionyl chloride, molecular formula SOCl 2 , also called sulfuric acid dichloride, under air suction. This produced sulfur dioxide gas and HCI gas under reaction with water.
  • the liberated salt-acid gas reacted with existing hydroxides to corresponding chlorides.
  • the entire layer solidified to form a white crust, which could subsequently be rinsed with distilled water.
  • the layer thus obtained was homogeneous, continuous and stably crosslinked: the metallically flexible steel substrate could be bent and severely shaken without exfoliation.
  • the inventors believe that the additional removal of moisture in combination with the formation of coarsely hygroscopic salts crosslinks the agglomerates at their contact points via oxygen bridges and with dehydration extremely accelerated.
  • any compound can be considered which can remove combined solvents and at the same time support crosslinking at the contact points of the agglomerates.
  • the process is preferably characterized in that as reagent at least one redox-active reagent selected from the group consisting of halogen, halogen-chalcogen compound, fluorine, chlorine, bromine, iodine, hypohalite, halite, halogenate, perhalogenate, light photons of UV Range, oxygen, oxygen enriched with ozone, ozone, perborate, percarbonate, peroxodisulfate, is used.
  • redox-active reagent selected from the group consisting of halogen, halogen-chalcogen compound, fluorine, chlorine, bromine, iodine, hypohalite, halite, halogenate, perhalogenate, light photons of UV Range, oxygen, oxygen enriched with ozone, ozone, perborate, percarbonate, peroxodisulfate, is used.
  • the method is characterized in that as reagent at least one acid or base active reagent selected from the group consisting of halo-hydrogen, hypohalite acid, haloic acid, haloacid, per-haloacid, hypochlorous acid, chlorous acid, chloric acid, perchloric acid, dry CO 2, dry NH 3, thionyl chloride , Sulfuryl chloride, phosphorus oxychloride, phosphorus trichloride.
  • at least one acid or base active reagent selected from the group consisting of halo-hydrogen, hypohalite acid, haloic acid, haloacid, per-haloacid, hypochlorous acid, chlorous acid, chloric acid, perchloric acid, dry CO 2, dry NH 3, thionyl chloride , Sulfuryl chloride, phosphorus oxychloride, phosphorus trichloride.
  • the process is preferably characterized in that the curing is assisted by at least one polymerizable additive, the polymerizable additive selected from the group consisting of swellable polysaccharide, agar-agar, carrageenan, tragacanth, gum arabic, alginates, pectin, swellable polypeptide, gelatin, Carboxymethylcellulose, hydroxyethylcellulose, polyacrylic, polycarboxylic acids, polyethers, polyamides, polyimides, silicon-organic compound having a methacrylic acid-based polymerizable side group, organosiloxane, silicone polyethers.
  • the polymerizable additive selected from the group consisting of swellable polysaccharide, agar-agar, carrageenan, tragacanth, gum arabic, alginates, pectin, swellable polypeptide, gelatin, Carboxymethylcellulose, hydroxyethylcellulose, polyacrylic, polycarboxylic acids, poly
  • the method is characterized in that the electrotechnical thin film is modified in the incompletely cured state with at least one of the aforementioned reagents edge.
  • the treatment of a layer containing metallic parts with sulfuryl chloride resulted in the formation of traces of chlorine. These oxidized an incompletely cured layer at the edge and gave this layer semiconductor properties.
  • the inventors assume that by targeted use of suitable oxidation reagents, reduction reagents and / or solids forming reagents edge layers in their valence and / or in their structure defects can be adjusted so that the layers in the same direction to the disclosure DE 37 84 645 T2 set versatile and as effective semiconductor combinations, such as PV layer sequences and / or regulating transistors can be formed.
  • the high voltage behavior of the present embodiment indicates that such layer modifications are possible and accessible with the presently disclosed method.
  • the present invention also discloses PV layer sequences and electrical control circuits, which can be obtained based on the claimed method.
  • the thin film has a thickness of 0.1 to several hundreds of microns, - the thin film has a maximum resistance of 30 + - 15 ohms per square centimeter,
  • the thin film has an inorganic content of at least 80 weight percent, balance consisting of inorganic adjuvants and non-aromatic, polymeric additives.
  • the electrotechnical thin layer is characterized in that the thin layer is combined with further thin layers according to the method, preferably arranged as a dielectric deposited between two planar electrodes.
  • Fig. 1 advantageous embodiment of a multi-layer sequence, which can serve as a capacitive power storage.
  • FIG. 2 advantageous embodiment of FIG. 1 in an isometric view.
  • an electrotechnical thin-film layer is arranged in a sequence of a plurality of electrode, dielectric and electrode substrate layers, wherein at least the dielectric layers and / or the electrode substrate layers are arranged. Layers were deposited according to the method, wherein
  • Anodensubstrat layers of hardened sodium-silicon-water glass layers consist of graphite particles
  • - Cathode substrate layers consist of cured sodium-silicon-water glass layers with titanium oxide particles
  • Dielectric layers of hardened layers of gelling agent with polyiodide content and / or iodine content exist,
  • the sequence of layers is reversibly usable as a capacitive, physicochemical current storage with charging voltages of up to 12 volts,
  • the sequence of layers has an energy density of at least 100, preferably 200 to 600, Wh per kilogram,
  • each layer has a resistance of at most 25 + - 5 ohms per square centimeter
  • the contacts of the electrode layers have contacts arranged laterally cantilevered out of the layer sequence
  • the up / down converter has a control circuit for keeping constant an output voltage
  • the up / down converter has a connection for an external consumer with a constant regulated output voltage.
  • a replacement for a lithium / polymer accumulator could preferably be produced using the presently disclosed method - preferably usable in a tablet PC: on a film carrier of 3 ⁇ 3 centimeters, a suitable, metallically conductive electrode is firstly used for this purpose. preferably in the form of an aqueous dispersion of "conductive silver” or "aluminum conductive paste” - applied and cured. Thereafter, a layer of an aqueous Si / SiO 2 / Na 2 O (sodium silicate-waterglass) is applied with additional graphite particles as conductive agglomerates.
  • Si / SiO 2 / Na 2 O sodium silicate-waterglass
  • An acid reacting, drying reagent accelerates the curing and it is obtained under a minute reaction time, a cured anode substrate.
  • the layer is kept as thin as possible (0.1 microns to 15 microns) in order not to exceed the internal resistance of about 30Ohm per cm 2 ;
  • graphite particles of not more than 0.5 micrometers in combination with silicon agglomerates of not more than 1 to 2 micrometers are dispersed basic dissolving, by Dipping, spraying, flooding, spinning or printing applied evenly in two- to three-layer package and cured suddenly under exposure to acid and / or oxidative reagent as a continuous layer.
  • active dielectric now a fresh dispersion of gelling agent - preferably E406 - water and potassium polyiodide solution - preferably iodine-potassium iodide or Povodinjod - applied surface, to form water-binding agglomerates (0.1 ⁇ to 15 ⁇ are at reaction times of 30 seconds to several Minutes accessible) and finally cured. Thereafter, a cathode substrate made of a mixture of Si / SiO 2 / Na 2 O (sodium silicate-waterglass) and SiO 2 is applied as an aqueous dispersion in the manner described above and cured. Finally, another electrode is applied as described above.
  • gelling agent - preferably E406 - water and potassium polyiodide solution - preferably iodine-potassium iodide or Povodinjod - applied surface, to form water-binding agglomerates (0.1 ⁇ to 15 ⁇ are at reaction times of 30 seconds to several Minutes accessible) and
  • a 'stack' By repeated repetition of the above-described steps, a sequence of dielectric layers, can be obtained, wherein the individual electrodes can be contacted via outwardly guided, wide contact bands.
  • a capacity variability is easy to achieve in this sandwich structure and the short manufacturing times allow multiple repetitions within a few minutes.
  • the electrode layers are repeatedly coated in each case in the reverse order of the pre-layers and can thus fulfill a dual function, whereby electrode material can be saved.
  • Figure 1 illustrates a design of such an accessible embodiment.
  • the high-performance capacity memory thus created is interconnected with an up / down converter. This connects depending on the necessary and available power different electrodes of the stack with a consumer. In the present case, a supply voltage of 3.7 volts had to be provided for initial tests. With the help of the up / down converter, a constant output power was achieved until complete discharge (design see Figure 2).
  • the inventors assume purely physico-chemical energy storage, which does not change the dielectric and must be over 99.99% reversible. With layer thicknesses of preferably 0.1 to 15 micrometers, the measured values calculate an energy density of 200 to 600 Wh per kilogram. Energy densities of at least 100 Wh per kilogram are thus safe and even at rough process control of a synthesis process possible. Overloading tests showed a high level of security of the layer sequence thus produced: beyond the 12 volt, the dielectric layer showed a breakdown typical of diodes: a short circuit occurred.
  • the present method for the first time proposes a process for the production of an electrotechnical thin layer in which a process control at room temperature provides stable, thin layers in a very short time by using an additional reagent.
  • Capacitive storage which could replace a Li-ion battery in a tablet PC and more far-reaching applications are thus accessible even in rough, industrial litigation.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Secondary Cells (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Hybrid Cells (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Paints Or Removers (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
EP16720700.0A 2015-02-26 2016-02-26 Raumtemperatur-verfahren zur herstellung elektrotechnischer dünnschichten und elektrotechnische dünnschicht Pending EP3262674A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015102801 2015-02-26
PCT/DE2016/100086 WO2016134706A1 (de) 2015-02-26 2016-02-26 Raumtemperatur-verfahren zur herstellung elektrotechnischer dünnschichten und elektrotechnische dünnschicht

Publications (1)

Publication Number Publication Date
EP3262674A1 true EP3262674A1 (de) 2018-01-03

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EP16720700.0A Pending EP3262674A1 (de) 2015-02-26 2016-02-26 Raumtemperatur-verfahren zur herstellung elektrotechnischer dünnschichten und elektrotechnische dünnschicht

Country Status (8)

Country Link
US (1) US10892160B2 (ja)
EP (1) EP3262674A1 (ja)
JP (2) JP2018512267A (ja)
CN (1) CN107896511B (ja)
CA (1) CA2977863C (ja)
DE (2) DE102016103432A1 (ja)
RU (1) RU2720133C2 (ja)
WO (1) WO2016134706A1 (ja)

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JP2018509762A (ja) 2015-02-26 2018-04-05 ダイナミック ソーラー システムズ アクツィエンゲゼルシャフトＤｙｎａｍｉｃ Ｓｏｌａｒ Ｓｙｓｔｅｍｓ Ａｇ 室温法によるｐｖフィルム構造の入手およびｐｖフィルム構造の室温製造法
DE202017001454U1 (de) 2017-03-19 2017-06-22 Dynamic Solar Systems Ag Geregelte, gedruckte Heizung
DE102017002623A1 (de) 2017-03-20 2018-09-20 Reinhold Gregarek Verbessertes tribostatisches I-I-P-Verfahren, tribostatische Pulverdüse und Verwendung zur Herstellung elektrotechnischer Mehrschichtverbunde
DE202017002209U1 (de) 2017-04-27 2017-06-21 Dynamic Solar Systems Ag Gedruckte Elektrode mit arrangierbaren LED-Komponenten
DE202017002725U1 (de) 2017-05-23 2017-06-13 Dynamic Solar Systems Ag Heizpanel mit gedruckter Heizung
CN109935469A (zh) * 2017-12-15 2019-06-25 钰邦科技股份有限公司 印刷型导电复合浆料、电容器及其制造方法
DE102020003811A1 (de) 2020-06-25 2021-12-30 Dynamic Solar Systems Ag Fußbodenheizungs-System mit verbessertem Schichtaufbau
RU2762374C1 (ru) * 2021-04-29 2021-12-20 Общество с ограниченной ответственностью «Научное предприятие Монокристалл Пасты» Способ формирования токосъёмного контакта на поверхности солнечных элементов с гетеропереходом

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RU2017131152A3 (ja) 2019-06-11
JP2018512267A (ja) 2018-05-17
DE102016103432A1 (de) 2016-09-01
CA2977863A1 (en) 2016-09-01
US10892160B2 (en) 2021-01-12
JP2021192907A (ja) 2021-12-23
RU2720133C2 (ru) 2020-04-24
CN107896511B (zh) 2022-02-18
US20180040429A1 (en) 2018-02-08
CA2977863C (en) 2023-09-19
DE112016000930A5 (de) 2017-11-02

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