EP3193370A2 - Verfahren zur herstellung eines cmos-bildsensors - Google Patents

Verfahren zur herstellung eines cmos-bildsensors Download PDF

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Publication number
EP3193370A2
EP3193370A2 EP17150401.2A EP17150401A EP3193370A2 EP 3193370 A2 EP3193370 A2 EP 3193370A2 EP 17150401 A EP17150401 A EP 17150401A EP 3193370 A2 EP3193370 A2 EP 3193370A2
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EP
European Patent Office
Prior art keywords
layer
deep trench
semiconductor substrate
image sensor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP17150401.2A
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English (en)
French (fr)
Other versions
EP3193370B1 (de
EP3193370A3 (de
Inventor
Fugang Chen
Wenlei Chen
Jie RU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
Original Assignee
Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Publication of EP3193370A2 publication Critical patent/EP3193370A2/de
Publication of EP3193370A3 publication Critical patent/EP3193370A3/de
Application granted granted Critical
Publication of EP3193370B1 publication Critical patent/EP3193370B1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
EP17150401.2A 2016-01-15 2017-01-05 Verfahren zur herstellung eines cmos-bildsensors Active EP3193370B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610025386.0A CN106981495B (zh) 2016-01-15 2016-01-15 一种cmos图像传感器及其制作方法

Publications (3)

Publication Number Publication Date
EP3193370A2 true EP3193370A2 (de) 2017-07-19
EP3193370A3 EP3193370A3 (de) 2017-11-01
EP3193370B1 EP3193370B1 (de) 2021-03-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP17150401.2A Active EP3193370B1 (de) 2016-01-15 2017-01-05 Verfahren zur herstellung eines cmos-bildsensors

Country Status (3)

Country Link
US (1) US10784303B2 (de)
EP (1) EP3193370B1 (de)
CN (1) CN106981495B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT201900024532A1 (it) * 2019-12-18 2021-06-18 St Microelectronics Srl Dispositivo integrato con presa profonda sotto trincea superficiale

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190011977A (ko) * 2017-07-26 2019-02-08 주식회사 디비하이텍 후면 조사형 이미지 센서 및 그 제조 방법
US10304886B2 (en) * 2017-09-28 2019-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. Back-side deep trench isolation (BDTI) structure for pinned photodiode image sensor
US10825853B2 (en) * 2017-11-09 2020-11-03 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor image sensor device with deep trench isolations and method for manufacturing the same
US10658409B2 (en) * 2017-11-17 2020-05-19 Taiwan Semiconductor Manufacturing Company Ltd. U. Semiconductor structure and method of manufacturing the same
CN109449173A (zh) * 2018-11-07 2019-03-08 德淮半导体有限公司 图像传感器及其形成方法
CN109273478A (zh) * 2018-11-09 2019-01-25 德淮半导体有限公司 图像传感器及制造图像传感器的方法
KR102637626B1 (ko) * 2019-01-08 2024-02-20 삼성전자주식회사 이미지 센서
CN110310971A (zh) * 2019-08-16 2019-10-08 德淮半导体有限公司 图像传感器及其形成方法
US11791367B2 (en) 2019-12-02 2023-10-17 Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
CN111029352B (zh) * 2019-12-02 2022-07-01 武汉新芯集成电路制造有限公司 半导体器件及其制造方法
CN111029353B (zh) * 2019-12-02 2022-07-01 武汉新芯集成电路制造有限公司 半导体器件及其制造方法
US11443976B2 (en) * 2020-10-20 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Trench isolation process
CN117153855B (zh) * 2023-10-30 2024-03-01 合肥晶合集成电路股份有限公司 一种背照式图像传感器的半导体结构及其制作方法

Family Cites Families (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652786B2 (ja) * 1986-05-13 1994-07-06 三菱電機株式会社 固体撮像素子
JPH07120779B2 (ja) * 1989-04-07 1995-12-20 三菱電機株式会社 固体撮像装置のオーバフロードレイン構造およびその製造方法
US5239193A (en) * 1990-04-02 1993-08-24 At&T Bell Laboratories Silicon photodiode for monolithic integrated circuits
JPH09246513A (ja) * 1996-03-06 1997-09-19 Sharp Corp 増幅型固体撮像素子およびその製造方法
US5877521A (en) * 1998-01-08 1999-03-02 International Business Machines Corporation SOI active pixel cell design with grounded body contact
US6054365A (en) * 1998-07-13 2000-04-25 International Rectifier Corp. Process for filling deep trenches with polysilicon and oxide
US20030089929A1 (en) * 2001-02-14 2003-05-15 Rhodes Howard E. Trench photosensor for a CMOS imager
JP2001326343A (ja) * 2000-05-16 2001-11-22 Minolta Co Ltd 固体撮像装置
US6611037B1 (en) * 2000-08-28 2003-08-26 Micron Technology, Inc. Multi-trench region for accumulation of photo-generated charge in a CMOS imager
US6696349B2 (en) * 2001-11-13 2004-02-24 Infineon Technologies Richmond Lp STI leakage reduction
US6888214B2 (en) * 2002-11-12 2005-05-03 Micron Technology, Inc. Isolation techniques for reducing dark current in CMOS image sensors
KR100461975B1 (ko) * 2002-12-27 2004-12-17 매그나칩 반도체 유한회사 이미지센서의 트렌치 소자분리막 형성방법
JP3729814B2 (ja) * 2003-02-21 2005-12-21 松下電器産業株式会社 固体撮像装置
US6946352B2 (en) * 2003-07-24 2005-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor device and method
JP4341421B2 (ja) * 2004-02-04 2009-10-07 ソニー株式会社 固体撮像装置
US8445944B2 (en) * 2004-02-04 2013-05-21 Sony Corporation Solid-state image pickup device
US7492027B2 (en) * 2004-02-20 2009-02-17 Micron Technology, Inc. Reduced crosstalk sensor and method of formation
US6943409B1 (en) * 2004-05-24 2005-09-13 International Business Machines Corporation Trench optical device
US7122840B2 (en) * 2004-06-17 2006-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with optical guard ring and fabrication method thereof
US7297995B2 (en) * 2004-08-24 2007-11-20 Micron Technology, Inc. Transparent metal shielded isolation for image sensors
US7279770B2 (en) * 2004-08-26 2007-10-09 Micron Technology, Inc. Isolation techniques for reducing dark current in CMOS image sensors
KR100630704B1 (ko) * 2004-10-20 2006-10-02 삼성전자주식회사 비평면 구조의 트랜지스터를 구비한 ｃｍｏｓ 이미지 센서및 그 제조 방법
US7217968B2 (en) * 2004-12-15 2007-05-15 International Business Machines Corporation Recessed gate for an image sensor
US7205627B2 (en) * 2005-02-23 2007-04-17 International Business Machines Corporation Image sensor cells
JP4354931B2 (ja) * 2005-05-19 2009-10-28 パナソニック株式会社 固体撮像装置及びその製造方法
JP2007096271A (ja) * 2005-09-05 2007-04-12 Toshiba Corp 固体撮像装置及びその製造方法
DE102005046624B3 (de) * 2005-09-29 2007-03-22 Atmel Germany Gmbh Verfahren zur Herstellung einer Halbleiteranordnung
US7652313B2 (en) * 2005-11-10 2010-01-26 International Business Machines Corporation Deep trench contact and isolation of buried photodetectors
KR100809323B1 (ko) * 2006-01-31 2008-03-05 삼성전자주식회사 크로스토크가 감소하고 감도가 증가한 이미지 센서
US7659564B2 (en) * 2006-02-14 2010-02-09 International Business Machines Corporation CMOS imager photodiode with enhanced capacitance
JP2007317939A (ja) * 2006-05-26 2007-12-06 Matsushita Electric Ind Co Ltd 固体撮像素子及びその製造方法
US8049256B2 (en) * 2006-10-05 2011-11-01 Omnivision Technologies, Inc. Active pixel sensor having a sensor wafer connected to a support circuit wafer
KR100801053B1 (ko) * 2006-10-27 2008-02-04 삼성전자주식회사 소자 분리 방법 및 이를 이용한 이미지 소자의 형성 방법
KR100819711B1 (ko) * 2006-12-27 2008-04-04 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조 방법
US7459668B2 (en) * 2007-03-06 2008-12-02 Micron Technology, Inc. Method, apparatus, and system to reduce ground resistance in a pixel array
US8440495B2 (en) * 2007-03-06 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing crosstalk in image sensors using implant technology
US9087755B2 (en) * 2007-04-24 2015-07-21 Koninklijke Philips N.V. Photodiodes and fabrication thereof
US8357984B2 (en) * 2008-02-08 2013-01-22 Omnivision Technologies, Inc. Image sensor with low electrical cross-talk
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
JP2009278241A (ja) * 2008-05-13 2009-11-26 Canon Inc 固体撮像装置の駆動方法および固体撮像装置
EP2133918B1 (de) * 2008-06-09 2015-01-28 Sony Corporation Festkörperabbildungsvorrichtung, entsprechendes Steuerungsverfahren und elektronische Vorrichtung
KR20090128899A (ko) * 2008-06-11 2009-12-16 크로스텍 캐피탈, 엘엘씨 후면 조사 이미지 센서 및 그 제조방법
JP5374941B2 (ja) * 2008-07-02 2013-12-25 ソニー株式会社 固体撮像装置及び電子機器
JP5231890B2 (ja) * 2008-07-31 2013-07-10 株式会社東芝 固体撮像装置とその製造方法
US8815634B2 (en) * 2008-10-31 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Dark currents and reducing defects in image sensors and photovoltaic junctions
TWI445166B (zh) * 2008-11-07 2014-07-11 Sony Corp 固態成像裝置，製造固態成像裝置之方法、及電子設備
US8022452B2 (en) * 2008-12-12 2011-09-20 Omnivision Technologies, Inc. Elimination of glowing artifact in digital images captured by an image sensor
JP4835710B2 (ja) * 2009-03-17 2011-12-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
US8247262B2 (en) * 2009-05-04 2012-08-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing contact resistance of CMOS image sensor
US8492865B2 (en) * 2009-09-24 2013-07-23 Omnivision Technologies, Inc. Image sensor with contact dummy pixels
JP5493669B2 (ja) * 2009-10-07 2014-05-14 ソニー株式会社 固体撮像装置、撮像装置、および固体撮像装置の製造方法
US8247854B2 (en) * 2009-10-08 2012-08-21 Electronics And Telecommunications Research Institute CMOS image sensor
US8531567B2 (en) * 2009-10-22 2013-09-10 Stmicroelectronics (Crolles 2) Sas Image sensor with vertical transfer gate
CN102270646A (zh) * 2010-06-01 2011-12-07 格科微电子（上海）有限公司 背面照光的cmos图像传感器
FR2963163A1 (fr) * 2010-07-21 2012-01-27 St Microelectronics Crolles 2 Procede de reinitialisation d'un photosite et photosite correspondant
US8390089B2 (en) * 2010-07-27 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with deep trench isolation structure
US8487350B2 (en) * 2010-08-20 2013-07-16 Omnivision Technologies, Inc. Entrenched transfer gate
US8507962B2 (en) * 2010-10-04 2013-08-13 International Business Machines Corporation Isolation structures for global shutter imager pixel, methods of manufacture and design structures
FR2969821A1 (fr) * 2010-12-23 2012-06-29 St Microelectronics Sa Dispositif d'imagerie matriciel a photosites a commandes monocoup de transfert de charges
FR2974239A1 (fr) * 2011-04-12 2012-10-19 St Microelectronics Crolles 2 Procede de realisation d'un capteur d'images a eclairement par la face arriere
US20120280109A1 (en) * 2011-05-05 2012-11-08 Omnivision Technologies, Inc. Method, apparatus and system to provide conductivity for a substrate of an image sensing pixel
US8339494B1 (en) * 2011-07-29 2012-12-25 Truesense Imaging, Inc. Image sensor with controllable vertically integrated photodetectors
TWI467751B (zh) * 2011-12-12 2015-01-01 Sony Corp A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device
KR101931658B1 (ko) * 2012-02-27 2018-12-21 삼성전자주식회사 이미지 센서의 단위 픽셀 및 이를 포함하는 이미지 센서
US8901697B2 (en) * 2012-03-16 2014-12-02 Analog Devices, Inc. Integrated circuit having a semiconducting via; an integrated circuit including a sensor, such as a photosensitive device, and a method of making said integrated circuit
US8686342B2 (en) * 2012-04-09 2014-04-01 Omnivision Technologies, Inc. Double-sided image sensor formed on a single semiconductor wafer die
KR101997539B1 (ko) * 2012-07-13 2019-07-08 삼성전자주식회사 이미지 센서 및 이의 형성 방법
TW201405792A (zh) * 2012-07-30 2014-02-01 Sony Corp 固體攝像裝置、固體攝像裝置之製造方法及電子機器
FR3000606B1 (fr) * 2013-01-02 2015-01-30 Commissariat Energie Atomique Capteur d'image
KR102083402B1 (ko) * 2013-02-25 2020-03-02 삼성전자주식회사 이미지 센서 및 이의 형성 방법
US9160949B2 (en) * 2013-04-01 2015-10-13 Omnivision Technologies, Inc. Enhanced photon detection device with biased deep trench isolation
JP2015012241A (ja) * 2013-07-01 2015-01-19 ソニー株式会社 撮像素子およびその製造方法、ならびに電子機器
US9356061B2 (en) * 2013-08-05 2016-05-31 Apple Inc. Image sensor with buried light shield and vertical gate
US9496304B2 (en) * 2013-08-15 2016-11-15 Omnivision Technologies, Inc. Image sensor pixel cell with switched deep trench isolation structure
US9054007B2 (en) * 2013-08-15 2015-06-09 Omnivision Technologies, Inc. Image sensor pixel cell with switched deep trench isolation structure
KR102255183B1 (ko) * 2014-02-21 2021-05-24 삼성전자주식회사 수직형 트랜지스터를 갖는 씨모스 이미지 센서 및 그 제조 방법
FR3019378A1 (fr) * 2014-03-25 2015-10-02 St Microelectronics Crolles 2 Structure d'isolement entre des photodiodes
US9768220B2 (en) * 2014-04-15 2017-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Deep trench isolation structure for image sensors
US9281331B2 (en) * 2014-06-19 2016-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. High dielectric constant structure for the vertical transfer gates of a complementary metal-oxide semiconductor (CMOS) image sensor
US9653507B2 (en) * 2014-06-25 2017-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Deep trench isolation shrinkage method for enhanced device performance
KR102383649B1 (ko) * 2014-08-19 2022-04-08 삼성전자주식회사 Cmos 이미지 센서
FR3027732B1 (fr) * 2014-10-27 2016-12-23 Commissariat Energie Atomique Capteur d'image a electrodes verticales
WO2016136486A1 (ja) * 2015-02-27 2016-09-01 ソニー株式会社 固体撮像装置及び電子機器
US9584744B2 (en) * 2015-06-23 2017-02-28 Semiconductor Components Industries, Llc Image sensors with voltage-biased trench isolation structures

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT201900024532A1 (it) * 2019-12-18 2021-06-18 St Microelectronics Srl Dispositivo integrato con presa profonda sotto trincea superficiale
EP3840031A1 (de) * 2019-12-18 2021-06-23 STMicroelectronics S.r.l. Integrierte vorrichtung mit tiefem kontaktstecker unter flachem isolationsgraben

Also Published As

Publication number Publication date
US20170207270A1 (en) 2017-07-20
US10784303B2 (en) 2020-09-22
EP3193370B1 (de) 2021-03-03
EP3193370A3 (de) 2017-11-01
CN106981495A (zh) 2017-07-25
CN106981495B (zh) 2019-10-25

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