EP2896066A4 - Verfahren zur herstellung von speicherzellen und arrays aus magnetspeicherzellenstrukturen sowie zugehörige speicherzellen und speicherzellenstrukturen - Google Patents

Verfahren zur herstellung von speicherzellen und arrays aus magnetspeicherzellenstrukturen sowie zugehörige speicherzellen und speicherzellenstrukturen

Info

Publication number
EP2896066A4
EP2896066A4 EP13836514.3A EP13836514A EP2896066A4 EP 2896066 A4 EP2896066 A4 EP 2896066A4 EP 13836514 A EP13836514 A EP 13836514A EP 2896066 A4 EP2896066 A4 EP 2896066A4
Authority
EP
European Patent Office
Prior art keywords
cell structures
memory cell
memory cells
arrays
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP13836514.3A
Other languages
English (en)
French (fr)
Other versions
EP2896066B1 (de
EP2896066A1 (de
Inventor
Gurtej S Sandhu
Witold Kula
Wayne I Kinney
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to EP20167398.5A priority Critical patent/EP3693998B1/de
Publication of EP2896066A1 publication Critical patent/EP2896066A1/de
Publication of EP2896066A4 publication Critical patent/EP2896066A4/de
Application granted granted Critical
Publication of EP2896066B1 publication Critical patent/EP2896066B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
EP13836514.3A 2012-09-13 2013-09-06 Verfahren zur herstellung einer magnetspeicherzelle und eines arrays davon mittels ionenstrahlstrukturierung Active EP2896066B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP20167398.5A EP3693998B1 (de) 2012-09-13 2013-09-06 Arrays von magnetspeicherzellen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/614,212 US9373775B2 (en) 2012-09-13 2012-09-13 Methods of forming magnetic memory cells
PCT/US2013/058632 WO2014042995A1 (en) 2012-09-13 2013-09-06 Methods of forming memory cells and arrays of magnetic memory cell structures, and related memory cells and memory cell structures

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP20167398.5A Division EP3693998B1 (de) 2012-09-13 2013-09-06 Arrays von magnetspeicherzellen

Publications (3)

Publication Number Publication Date
EP2896066A1 EP2896066A1 (de) 2015-07-22
EP2896066A4 true EP2896066A4 (de) 2016-08-03
EP2896066B1 EP2896066B1 (de) 2020-04-08

Family

ID=50232409

Family Applications (2)

Application Number Title Priority Date Filing Date
EP13836514.3A Active EP2896066B1 (de) 2012-09-13 2013-09-06 Verfahren zur herstellung einer magnetspeicherzelle und eines arrays davon mittels ionenstrahlstrukturierung
EP20167398.5A Active EP3693998B1 (de) 2012-09-13 2013-09-06 Arrays von magnetspeicherzellen

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP20167398.5A Active EP3693998B1 (de) 2012-09-13 2013-09-06 Arrays von magnetspeicherzellen

Country Status (7)

Country Link
US (2) US9373775B2 (de)
EP (2) EP2896066B1 (de)
JP (1) JP6086983B2 (de)
KR (2) KR101872176B1 (de)
CN (1) CN104718614B (de)
TW (1) TWI542052B (de)
WO (1) WO2014042995A1 (de)

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US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9779955B2 (en) * 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
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JP6374452B2 (ja) * 2016-08-04 2018-08-15 株式会社東芝 磁気メモリ
JP6297104B2 (ja) * 2016-08-04 2018-03-20 株式会社東芝 磁気記憶装置及びその製造方法
US10276555B2 (en) * 2016-10-01 2019-04-30 Samsung Electronics Co., Ltd. Method and system for providing a magnetic cell usable in spin transfer torque applications and including a switchable shunting layer
US10727271B2 (en) 2017-01-05 2020-07-28 Micron Trechnology, Inc. Memory device having source contacts located at intersections of linear portions of a common source, electronic systems, and associated methods
US10014345B1 (en) 2017-01-05 2018-07-03 Micron Technology, Inc. Magnetic memory device with grid-shaped common source plate, system, and method of fabrication
US10453895B2 (en) 2017-01-05 2019-10-22 Micron Technology, Inc. Magnetic memory device with a common source having an array of openings, system, and method of fabrication
JP7023637B2 (ja) * 2017-08-08 2022-02-22 株式会社日立ハイテク 磁気トンネル接合素子の製造方法
WO2019046064A1 (en) 2017-08-29 2019-03-07 Everspin Technologies, Inc. MAGNETORESISTIVE CELL ETCHING METHOD
JP6581634B2 (ja) * 2017-09-20 2019-09-25 株式会社東芝 磁気記憶装置
EP3506359A1 (de) * 2017-12-29 2019-07-03 IMEC vzw Speichervorrichtung mit magnettunnelübergängen und herstellungsverfahren dafür
US10930843B2 (en) * 2018-12-17 2021-02-23 Spin Memory, Inc. Process for manufacturing scalable spin-orbit torque (SOT) magnetic memory
US11043632B2 (en) * 2019-09-17 2021-06-22 Headway Technologies, Inc. Ion beam etching process design to minimize sidewall re-deposition
KR20210039525A (ko) 2019-10-01 2021-04-12 삼성전자주식회사 자기 메모리 장치 및 그 제조방법
CN112820821A (zh) * 2019-11-15 2021-05-18 联华电子股份有限公司 半导体元件及其制作方法
JP2022051040A (ja) 2020-09-18 2022-03-31 キオクシア株式会社 磁気記憶装置及び磁気記憶装置の製造方法
US11222678B1 (en) * 2020-10-02 2022-01-11 Sandisk Technologies Llc MRAM cross-point memory with reversed MRAM element vertical orientation

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US20110076784A1 (en) * 2009-09-29 2011-03-31 Grandis Inc. Fabrication of Magnetic Element Arrays

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US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US20020160541A1 (en) * 2001-04-27 2002-10-31 Durcan D. Mark Method for forming minimally spaced MRAM structures
US20090104718A1 (en) * 2007-10-17 2009-04-23 Magic Technologies, Inc. Method of magnetic tunneling layer processes for spin-transfer torque MRAM
US20110076784A1 (en) * 2009-09-29 2011-03-31 Grandis Inc. Fabrication of Magnetic Element Arrays

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See also references of WO2014042995A1 *

Also Published As

Publication number Publication date
CN104718614B (zh) 2017-11-10
TWI542052B (zh) 2016-07-11
EP2896066B1 (de) 2020-04-08
EP3693998B1 (de) 2022-11-30
JP2015532013A (ja) 2015-11-05
EP3693998A1 (de) 2020-08-12
JP6086983B2 (ja) 2017-03-01
EP2896066A1 (de) 2015-07-22
US20160308117A1 (en) 2016-10-20
CN104718614A (zh) 2015-06-17
KR20170092715A (ko) 2017-08-11
KR20150052227A (ko) 2015-05-13
US20140070342A1 (en) 2014-03-13
KR101872176B1 (ko) 2018-06-27
US10164168B2 (en) 2018-12-25
TW201424068A (zh) 2014-06-16
WO2014042995A1 (en) 2014-03-20
US9373775B2 (en) 2016-06-21

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