JP5007509B2 - 磁気記憶装置の製造方法 - Google Patents
磁気記憶装置の製造方法 Download PDFInfo
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- JP5007509B2 JP5007509B2 JP2006030577A JP2006030577A JP5007509B2 JP 5007509 B2 JP5007509 B2 JP 5007509B2 JP 2006030577 A JP2006030577 A JP 2006030577A JP 2006030577 A JP2006030577 A JP 2006030577A JP 5007509 B2 JP5007509 B2 JP 5007509B2
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- layer
- insulating film
- forming
- hard mask
- recording layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Description
Claims (2)
- 参照層、トンネルバリア層および記録層が順に積層されており、電流によるスピン注入磁化反転で前記記録層に情報が書き込まれ、電流によって前記記録層に書き込まれた情報が読み出される磁気トンネル接合素子を備えた磁気記憶装置の製造方法において、
選択トランジスタの拡散層上を被覆する第1絶縁膜に、前記拡散層に接続されるプラグを形成する、プラグ形成工程と、
前記第1絶縁膜上にて前記プラグ上を被覆するように、前記参照層、前記トンネルバリア層、前記記録層の各形成層を順に積層する、形成層積層工程と、
前記記録層の形成層上に、第1ハードマスク、第2ハードマスクを積層して形成する、ハードマスク形成工程と、
前記第2ハードマスクと前記第1ハードマスクとをマスクにして、前記記録層の形成層を加工することによって、前記記録層を形成する、記録層形成工程と、
前記記録層の側部を被覆するように、サイドウォール絶縁膜を、該サイドウォール絶縁膜の膜厚が「合わせズレ量+10nm」となるように形成する、サイドウォール形成工程と、
前記サイドウォール絶縁膜、前記第2ハードマスク、前記第1ハードマスクをマスクにして、前記トンネルバリア層の形成層および前記参照層の形成層を加工することによって、前記トンネルバリア層および前記参照層を形成することで、前記磁気トンネル接合素子を形成する、トンネルバリア層・参照層形成工程と、
前記磁気トンネル接合素子を被覆するように第2絶縁膜を形成した後に、前記第1ハードマスクを露出させるように、前記第2絶縁膜の表面を平坦化する、平坦化工程と
を備え、
前記ハードマスク形成工程では、前記第1ハードマスクについて導電性を有するように形成し、前記第2ハードマスクについて、絶縁膜で形成する、
磁気記憶装置の製造方法。 - 前記平坦化工程の実施後に、前記第2絶縁膜上に、前記第1ハードマスクに接続するビット線を形成する、ビット線形成工程を備える、
請求項1に記載の磁気記憶装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006030577A JP5007509B2 (ja) | 2006-02-08 | 2006-02-08 | 磁気記憶装置の製造方法 |
US11/700,205 US7897950B2 (en) | 2006-02-08 | 2007-01-31 | Magnetic memory, a method of manufacturing the same, and semiconductor integrated circuit apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006030577A JP5007509B2 (ja) | 2006-02-08 | 2006-02-08 | 磁気記憶装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007214229A JP2007214229A (ja) | 2007-08-23 |
JP5007509B2 true JP5007509B2 (ja) | 2012-08-22 |
Family
ID=38333185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006030577A Expired - Fee Related JP5007509B2 (ja) | 2006-02-08 | 2006-02-08 | 磁気記憶装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7897950B2 (ja) |
JP (1) | JP5007509B2 (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008098365A (ja) * | 2006-10-11 | 2008-04-24 | Toshiba Corp | 磁気ランダムアクセスメモリ及びその製造方法 |
JP2008130807A (ja) * | 2006-11-21 | 2008-06-05 | Toshiba Corp | 磁気ランダムアクセスメモリ及びその製造方法 |
KR101138916B1 (ko) * | 2008-01-29 | 2012-05-14 | 가부시키가이샤 알박 | 자기 소자 제조 방법 |
JP2010103224A (ja) * | 2008-10-22 | 2010-05-06 | Toshiba Corp | 磁気抵抗素子、及び磁気メモリ |
JP5175750B2 (ja) * | 2009-01-19 | 2013-04-03 | 株式会社日立製作所 | 磁性記憶素子を用いた半導体集積回路装置の製造方法 |
US8227896B2 (en) * | 2009-12-11 | 2012-07-24 | International Business Machines Corporation | Resistive switching in nitrogen-doped MgO |
KR20120058113A (ko) * | 2010-11-29 | 2012-06-07 | 삼성전자주식회사 | 자기 터널 접합 구조체의 제조 방법 및 이를 이용하는 자기 메모리 소자의 제조 방법 |
CN102747353A (zh) * | 2011-04-22 | 2012-10-24 | 鸿富锦精密工业(深圳)有限公司 | 镁合金壳体及其制作方法 |
US9082695B2 (en) | 2011-06-06 | 2015-07-14 | Avalanche Technology, Inc. | Vialess memory structure and method of manufacturing same |
JP2013021108A (ja) * | 2011-07-11 | 2013-01-31 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
US8709956B2 (en) | 2011-08-01 | 2014-04-29 | Avalanche Technology Inc. | MRAM with sidewall protection and method of fabrication |
US8796795B2 (en) | 2011-08-01 | 2014-08-05 | Avalanche Technology Inc. | MRAM with sidewall protection and method of fabrication |
US8536063B2 (en) | 2011-08-30 | 2013-09-17 | Avalanche Technology Inc. | MRAM etching processes |
US8574928B2 (en) | 2012-04-10 | 2013-11-05 | Avalanche Technology Inc. | MRAM fabrication method with sidewall cleaning |
US8883520B2 (en) | 2012-06-22 | 2014-11-11 | Avalanche Technology, Inc. | Redeposition control in MRAM fabrication process |
JP2014056941A (ja) * | 2012-09-12 | 2014-03-27 | Toshiba Corp | 抵抗変化型メモリ |
US9373775B2 (en) | 2012-09-13 | 2016-06-21 | Micron Technology, Inc. | Methods of forming magnetic memory cells |
US9231197B2 (en) | 2012-11-12 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Logic compatible RRAM structure and process |
US9166154B2 (en) | 2012-12-07 | 2015-10-20 | Avalance Technology, Inc. | MTJ stack and bottom electrode patterning process with ion beam etching using a single mask |
KR20150037047A (ko) * | 2013-09-30 | 2015-04-08 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
KR102192205B1 (ko) * | 2014-04-28 | 2020-12-18 | 삼성전자주식회사 | 메모리 장치 |
KR102214507B1 (ko) | 2014-09-15 | 2021-02-09 | 삼성전자 주식회사 | 자기 메모리 장치 |
US9601137B2 (en) | 2014-12-19 | 2017-03-21 | Headway Technologies, Inc. | Magnetic read head with magnetoresistive (MR) enhancements toward low resistance X area (RA) product |
US9685201B2 (en) | 2015-07-10 | 2017-06-20 | International Business Machines Corporation | Corrosion and/or oxidation damage protection for tunnel junctions |
US11245069B2 (en) * | 2015-07-14 | 2022-02-08 | Applied Materials, Inc. | Methods for forming structures with desired crystallinity for MRAM applications |
KR102444236B1 (ko) | 2015-08-25 | 2022-09-16 | 삼성전자주식회사 | 자기 소자 및 그 제조 방법 |
US9705071B2 (en) * | 2015-11-24 | 2017-07-11 | International Business Machines Corporation | Structure and method to reduce shorting and process degradation in STT-MRAM devices |
US10790001B2 (en) * | 2019-01-04 | 2020-09-29 | International Business Machines Corporation | Tapered VA structure for increased alignment tolerance and reduced sputter redeposition in MTJ devices |
KR102518015B1 (ko) | 2019-01-31 | 2023-04-05 | 삼성전자주식회사 | 자기 저항 메모리 소자 및 그 제조 방법 |
JP2020155459A (ja) * | 2019-03-18 | 2020-09-24 | キオクシア株式会社 | 磁気記憶装置及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004128229A (ja) * | 2002-10-02 | 2004-04-22 | Nec Corp | 磁性メモリ及びその製造方法 |
KR100535046B1 (ko) * | 2002-12-30 | 2005-12-07 | 주식회사 하이닉스반도체 | 마그네틱 램의 형성방법 |
JP2005093488A (ja) * | 2003-09-12 | 2005-04-07 | Sony Corp | 磁気抵抗効果素子とその製造方法、および磁気メモリ装置とその製造方法 |
JP2005150482A (ja) * | 2003-11-18 | 2005-06-09 | Sony Corp | 磁気抵抗効果素子及び磁気メモリ装置 |
JP2005243764A (ja) * | 2004-02-25 | 2005-09-08 | Sony Corp | 磁気記憶装置の製造方法 |
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2006
- 2006-02-08 JP JP2006030577A patent/JP5007509B2/ja not_active Expired - Fee Related
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2007
- 2007-01-31 US US11/700,205 patent/US7897950B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US20070181964A1 (en) | 2007-08-09 |
US7897950B2 (en) | 2011-03-01 |
JP2007214229A (ja) | 2007-08-23 |
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