JP2013131781A - 磁気メモリセル - Google Patents
磁気メモリセル Download PDFInfo
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- JP2013131781A JP2013131781A JP2013076195A JP2013076195A JP2013131781A JP 2013131781 A JP2013131781 A JP 2013131781A JP 2013076195 A JP2013076195 A JP 2013076195A JP 2013076195 A JP2013076195 A JP 2013076195A JP 2013131781 A JP2013131781 A JP 2013131781A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 44
- 239000010410 layer Substances 0.000 claims abstract description 153
- 239000011241 protective layer Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 230000005641 tunneling Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 56
- 230000008569 process Effects 0.000 description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910052814 silicon oxide Inorganic materials 0.000 description 21
- 238000005530 etching Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000005290 antiferromagnetic effect Effects 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】この磁気メモリセルは、基板上に設けられると共に、絶縁トンネル層と、上面を有し絶縁トンネル層の上方に横たわるように設けられたキャップ層とを含み、傾斜した側壁面を有する磁気トンネル接合構造と、キャップ層の上面を除き、傾斜した側壁面を覆うように設けられた保護層と、この保護層の上に設けられた上部電極層とを備える。側壁面と上部電極層との間の短絡が阻止されている。
【選択図】 図5
Description
磁気メモリに係わり、特に、磁気トンネル接合を保護する構造をもった磁気メモリセルに関する。
ロセス等を開示している。特許文献2において、Grynkewichらは、プラズマエンハンスト窒化物を形成してからMTJ積層構造の上に酸化物を形成し、CMPプロセスを行うことを開示している。特許文献3において、Durlamらは、MTJ積層構造の上に誘電体層を形成後、CMPプロセスにより平坦化することを提案している。特許文献4において、Leeは、層のパターニングするためにハードマスクを利用することを提案している。特許文献5は、Nuetzelらによるものであり、MTJ素子を形成したのち、窒化物層の形成に続いて、アライメントマークを構成する導電材料からなるレジスト層を形成し、このレジスト層をCMPプロセスで利用することを開示している。Leuschnerらによる特許文献6、およびLeeによる特許文献7には、MTJ素子の上を充填するための材料として窒化物または酸化物を用い、CMPプロセスを行うことが開示されている。特許文献8において、Nuetzelらは、MTJ積層構造の上のブランケット窒化物層を平坦化する技術を開示している。特許文献9において、Tuttleらは、MTJ層を保護するために、CMPプロセスを行わずにスラグ残渣110を当てにすること、エッチングマスク80をキャップ層上に残しておくこと、フリー層を基準としてトンネル層を階段状に形成をすることを開示している。
Claims (5)
- 基板上に設けられると共に、絶縁トンネル層と、上面を有し前記絶縁トンネル層の上方に横たわるように設けられたキャップ層とを含み、傾斜した側壁面を有する磁気トンネル接合構造と、
前記キャップ層の上面を除き、前記傾斜した側壁面を覆うように設けられた保護層と、
前記保護層の上に設けられた上部電極層と
を備え、
前記側壁面と前記上部電極層との間の短絡が阻止されている
ことを特徴とする磁気メモリセル。 - 前記保護層がシリコン窒化物またはシリコン酸化窒化物で構成されている
ことを特徴とする請求項1に記載の磁気メモリセル。 - 前記保護層がTa,Ru,TaN,Ti,TiN,およびWNからなる群から選ばれた元素を含むと共に3nmないし50nmの膜厚を有する
ことを特徴とする請求項1に記載の磁気メモリセル。 - 前記保護層が3nmないし40nmの膜厚を有する
ことを特徴とする請求項1に記載の磁気メモリセル。 - 約10時間にわたって約280°Cの温度に加熱されたとしても磁気トンネル接合の抵抗値が有意の影響を受けないような磁気メモリセル性能を有する
ことを特徴とする請求項2に記載の磁気メモリセル。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/221,146 | 2005-09-07 | ||
US11/221,146 US20070054450A1 (en) | 2005-09-07 | 2005-09-07 | Structure and fabrication of an MRAM cell |
Related Parent Applications (1)
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JP2006243278A Division JP5271488B2 (ja) | 2005-09-07 | 2006-09-07 | 磁気メモリセルの製造方法 |
Publications (1)
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JP2013131781A true JP2013131781A (ja) | 2013-07-04 |
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JP2006243278A Expired - Fee Related JP5271488B2 (ja) | 2005-09-07 | 2006-09-07 | 磁気メモリセルの製造方法 |
JP2013076195A Pending JP2013131781A (ja) | 2005-09-07 | 2013-04-01 | 磁気メモリセル |
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JP2006243278A Expired - Fee Related JP5271488B2 (ja) | 2005-09-07 | 2006-09-07 | 磁気メモリセルの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20070054450A1 (ja) |
EP (1) | EP1763094A3 (ja) |
JP (2) | JP5271488B2 (ja) |
Cited By (1)
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WO2019077661A1 (ja) * | 2017-10-16 | 2019-04-25 | Tdk株式会社 | トンネル磁気抵抗効果素子、磁気メモリ、内蔵型メモリ、及びトンネル磁気抵抗効果素子を作製する方法 |
JPWO2019077661A1 (ja) * | 2017-10-16 | 2019-11-14 | Tdk株式会社 | トンネル磁気抵抗効果素子、磁気メモリ、及び内蔵型メモリ |
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JP2007073971A (ja) | 2007-03-22 |
EP1763094A2 (en) | 2007-03-14 |
JP5271488B2 (ja) | 2013-08-21 |
US20070054450A1 (en) | 2007-03-08 |
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