JP2013131781A - 磁気メモリセル - Google Patents
磁気メモリセル Download PDFInfo
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- JP2013131781A JP2013131781A JP2013076195A JP2013076195A JP2013131781A JP 2013131781 A JP2013131781 A JP 2013131781A JP 2013076195 A JP2013076195 A JP 2013076195A JP 2013076195 A JP2013076195 A JP 2013076195A JP 2013131781 A JP2013131781 A JP 2013131781A
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- mtj
- magnetic memory
- memory cell
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Abstract
【解決手段】この磁気メモリセルは、基板上に設けられると共に、絶縁トンネル層と、上面を有し絶縁トンネル層の上方に横たわるように設けられたキャップ層とを含み、傾斜した側壁面を有する磁気トンネル接合構造と、キャップ層の上面を除き、傾斜した側壁面を覆うように設けられた保護層と、この保護層の上に設けられた上部電極層とを備える。側壁面と上部電極層との間の短絡が阻止されている。
【選択図】 図5
Description
磁気メモリに係わり、特に、磁気トンネル接合を保護する構造をもった磁気メモリセルに関する。
ロセス等を開示している。特許文献2において、Grynkewichらは、プラズマエンハンスト窒化物を形成してからMTJ積層構造の上に酸化物を形成し、CMPプロセスを行うことを開示している。特許文献3において、Durlamらは、MTJ積層構造の上に誘電体層を形成後、CMPプロセスにより平坦化することを提案している。特許文献4において、Leeは、層のパターニングするためにハードマスクを利用することを提案している。特許文献5は、Nuetzelらによるものであり、MTJ素子を形成したのち、窒化物層の形成に続いて、アライメントマークを構成する導電材料からなるレジスト層を形成し、このレジスト層をCMPプロセスで利用することを開示している。Leuschnerらによる特許文献6、およびLeeによる特許文献7には、MTJ素子の上を充填するための材料として窒化物または酸化物を用い、CMPプロセスを行うことが開示されている。特許文献8において、Nuetzelらは、MTJ積層構造の上のブランケット窒化物層を平坦化する技術を開示している。特許文献9において、Tuttleらは、MTJ層を保護するために、CMPプロセスを行わずにスラグ残渣110を当てにすること、エッチングマスク80をキャップ層上に残しておくこと、フリー層を基準としてトンネル層を階段状に形成をすることを開示している。
Claims (5)
- 基板上に設けられると共に、絶縁トンネル層と、上面を有し前記絶縁トンネル層の上方に横たわるように設けられたキャップ層とを含み、傾斜した側壁面を有する磁気トンネル接合構造と、
前記キャップ層の上面を除き、前記傾斜した側壁面を覆うように設けられた保護層と、
前記保護層の上に設けられた上部電極層と
を備え、
前記側壁面と前記上部電極層との間の短絡が阻止されている
ことを特徴とする磁気メモリセル。 - 前記保護層がシリコン窒化物またはシリコン酸化窒化物で構成されている
ことを特徴とする請求項1に記載の磁気メモリセル。 - 前記保護層がTa,Ru,TaN,Ti,TiN,およびWNからなる群から選ばれた元素を含むと共に3nmないし50nmの膜厚を有する
ことを特徴とする請求項1に記載の磁気メモリセル。 - 前記保護層が3nmないし40nmの膜厚を有する
ことを特徴とする請求項1に記載の磁気メモリセル。 - 約10時間にわたって約280°Cの温度に加熱されたとしても磁気トンネル接合の抵抗値が有意の影響を受けないような磁気メモリセル性能を有する
ことを特徴とする請求項2に記載の磁気メモリセル。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/221,146 | 2005-09-07 | ||
US11/221,146 US20070054450A1 (en) | 2005-09-07 | 2005-09-07 | Structure and fabrication of an MRAM cell |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006243278A Division JP5271488B2 (ja) | 2005-09-07 | 2006-09-07 | 磁気メモリセルの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013131781A true JP2013131781A (ja) | 2013-07-04 |
Family
ID=37680768
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2006243278A Expired - Fee Related JP5271488B2 (ja) | 2005-09-07 | 2006-09-07 | 磁気メモリセルの製造方法 |
JP2013076195A Pending JP2013131781A (ja) | 2005-09-07 | 2013-04-01 | 磁気メモリセル |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006243278A Expired - Fee Related JP5271488B2 (ja) | 2005-09-07 | 2006-09-07 | 磁気メモリセルの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20070054450A1 (ja) |
EP (1) | EP1763094A3 (ja) |
JP (2) | JP5271488B2 (ja) |
Cited By (1)
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2005
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-
2006
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- 2006-09-07 JP JP2006243278A patent/JP5271488B2/ja not_active Expired - Fee Related
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2013
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Also Published As
Publication number | Publication date |
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JP5271488B2 (ja) | 2013-08-21 |
JP2007073971A (ja) | 2007-03-22 |
EP1763094A3 (en) | 2011-02-09 |
US20070054450A1 (en) | 2007-03-08 |
EP1763094A2 (en) | 2007-03-14 |
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