EP2831918A4 - Procédé d'intégration ono dans un flux cmos logique - Google Patents

Procédé d'intégration ono dans un flux cmos logique

Info

Publication number
EP2831918A4
EP2831918A4 EP13767491.7A EP13767491A EP2831918A4 EP 2831918 A4 EP2831918 A4 EP 2831918A4 EP 13767491 A EP13767491 A EP 13767491A EP 2831918 A4 EP2831918 A4 EP 2831918A4
Authority
EP
European Patent Office
Prior art keywords
ono
integration
logic cmos
cmos flow
logic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13767491.7A
Other languages
German (de)
English (en)
Other versions
EP2831918A1 (fr
Inventor
Krishnaswamy Ramkumar
Bo Jin
Fredrick Jenne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cypress Semiconductor Corp
Original Assignee
Cypress Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/434,347 external-priority patent/US9102522B2/en
Application filed by Cypress Semiconductor Corp filed Critical Cypress Semiconductor Corp
Priority to EP16167775.2A priority Critical patent/EP3166147A3/fr
Priority to EP21160971.4A priority patent/EP3866199A1/fr
Publication of EP2831918A1 publication Critical patent/EP2831918A1/fr
Publication of EP2831918A4 publication Critical patent/EP2831918A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
EP13767491.7A 2012-03-29 2013-03-13 Procédé d'intégration ono dans un flux cmos logique Withdrawn EP2831918A4 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP16167775.2A EP3166147A3 (fr) 2012-03-29 2013-03-13 Procédé d'intégration d'une couche ono dans un procédé logiques cmos
EP21160971.4A EP3866199A1 (fr) 2012-03-29 2013-03-13 Procédé d'intégration d'ono dans un procédé logique cmos

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/434,347 US9102522B2 (en) 2009-04-24 2012-03-29 Method of ONO integration into logic CMOS flow
PCT/US2013/030874 WO2013148196A1 (fr) 2012-03-29 2013-03-13 Procédé d'intégration ono dans un flux cmos logique

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP21160971.4A Division EP3866199A1 (fr) 2012-03-29 2013-03-13 Procédé d'intégration d'ono dans un procédé logique cmos
EP16167775.2A Division EP3166147A3 (fr) 2012-03-29 2013-03-13 Procédé d'intégration d'une couche ono dans un procédé logiques cmos

Publications (2)

Publication Number Publication Date
EP2831918A1 EP2831918A1 (fr) 2015-02-04
EP2831918A4 true EP2831918A4 (fr) 2015-11-18

Family

ID=49261024

Family Applications (3)

Application Number Title Priority Date Filing Date
EP16167775.2A Withdrawn EP3166147A3 (fr) 2012-03-29 2013-03-13 Procédé d'intégration d'une couche ono dans un procédé logiques cmos
EP21160971.4A Pending EP3866199A1 (fr) 2012-03-29 2013-03-13 Procédé d'intégration d'ono dans un procédé logique cmos
EP13767491.7A Withdrawn EP2831918A4 (fr) 2012-03-29 2013-03-13 Procédé d'intégration ono dans un flux cmos logique

Family Applications Before (2)

Application Number Title Priority Date Filing Date
EP16167775.2A Withdrawn EP3166147A3 (fr) 2012-03-29 2013-03-13 Procédé d'intégration d'une couche ono dans un procédé logiques cmos
EP21160971.4A Pending EP3866199A1 (fr) 2012-03-29 2013-03-13 Procédé d'intégration d'ono dans un procédé logique cmos

Country Status (6)

Country Link
EP (3) EP3166147A3 (fr)
JP (1) JP6328607B2 (fr)
KR (2) KR102079835B1 (fr)
CN (2) CN108899273B (fr)
TW (2) TWI599020B (fr)
WO (1) WO2013148196A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9102522B2 (en) 2009-04-24 2015-08-11 Cypress Semiconductor Corporation Method of ONO integration into logic CMOS flow
US8071453B1 (en) 2009-04-24 2011-12-06 Cypress Semiconductor Corporation Method of ONO integration into MOS flow
US8883624B1 (en) 2013-09-27 2014-11-11 Cypress Semiconductor Corporation Integration of a memory transistor into high-K, metal gate CMOS process flow
CN104617100A (zh) * 2015-01-30 2015-05-13 武汉新芯集成电路制造有限公司 Sonos存储器结构及其制作方法
US9218978B1 (en) * 2015-03-09 2015-12-22 Cypress Semiconductor Corporation Method of ONO stack formation
US10020317B2 (en) * 2015-08-31 2018-07-10 Cypress Semiconductor Corporation Memory device with multi-layer channel and charge trapping layer
US10242996B2 (en) 2017-07-19 2019-03-26 Cypress Semiconductor Corporation Method of forming high-voltage transistor with thin gate poly
CN110416221B (zh) * 2019-07-31 2022-02-22 上海华力微电子有限公司 半导体器件的形成方法
US11488977B2 (en) 2020-04-14 2022-11-01 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
TWI773086B (zh) * 2020-11-17 2022-08-01 大陸商長江存儲科技有限責任公司 用於形成立體（３ｄ）記憶體元件的方法

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US20060115978A1 (en) * 2004-11-30 2006-06-01 Michael Specht Charge-trapping memory cell and method for production
US8063434B1 (en) * 2007-05-25 2011-11-22 Cypress Semiconductor Corporation Memory transistor with multiple charge storing layers and a high work function gate electrode
US8071453B1 (en) * 2009-04-24 2011-12-06 Cypress Semiconductor Corporation Method of ONO integration into MOS flow

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JP3459240B2 (ja) * 2001-06-22 2003-10-20 富士雄 舛岡 半導体記憶装置
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See also references of WO2013148196A1 *

Also Published As

Publication number Publication date
CN104321877B (zh) 2018-09-14
CN104321877A (zh) 2015-01-28
JP2015512567A (ja) 2015-04-27
EP3866199A1 (fr) 2021-08-18
EP3166147A3 (fr) 2017-08-16
KR20190082327A (ko) 2019-07-09
EP2831918A1 (fr) 2015-02-04
TWI599020B (zh) 2017-09-11
JP6328607B2 (ja) 2018-05-23
TW201347150A (zh) 2013-11-16
WO2013148196A1 (fr) 2013-10-03
TW201743437A (zh) 2017-12-16
CN108899273B (zh) 2024-02-09
KR102079835B1 (ko) 2020-02-20
KR20150105186A (ko) 2015-09-16
TWI648843B (zh) 2019-01-21
CN108899273A (zh) 2018-11-27
EP3166147A2 (fr) 2017-05-10

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