EP2803077A4 - CIRCUITS WITH LINEAR FINFET STRUCTURES - Google Patents
CIRCUITS WITH LINEAR FINFET STRUCTURESInfo
- Publication number
- EP2803077A4 EP2803077A4 EP13735704.2A EP13735704A EP2803077A4 EP 2803077 A4 EP2803077 A4 EP 2803077A4 EP 13735704 A EP13735704 A EP 13735704A EP 2803077 A4 EP2803077 A4 EP 2803077A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- circuits
- finfet structures
- linear
- linear finfet
- structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/6681—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261586387P | 2012-01-13 | 2012-01-13 | |
US201261589224P | 2012-01-20 | 2012-01-20 | |
PCT/US2013/021345 WO2013106799A1 (en) | 2012-01-13 | 2013-01-13 | Circuits with linear finfet structures |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2803077A1 EP2803077A1 (en) | 2014-11-19 |
EP2803077A4 true EP2803077A4 (en) | 2015-11-04 |
Family
ID=48781972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13735704.2A Withdrawn EP2803077A4 (en) | 2012-01-13 | 2013-01-13 | CIRCUITS WITH LINEAR FINFET STRUCTURES |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP2803077A4 (ko) |
JP (3) | JP2015506589A (ko) |
KR (1) | KR101913457B1 (ko) |
CN (2) | CN104303263B (ko) |
AU (4) | AU2013207719B2 (ko) |
SG (2) | SG11201404024YA (ko) |
TW (4) | TWI581403B (ko) |
WO (1) | WO2013106799A1 (ko) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015025441A1 (ja) | 2013-08-23 | 2015-02-26 | パナソニック株式会社 | 半導体集積回路装置 |
CN108922887B (zh) * | 2013-09-04 | 2022-12-09 | 株式会社索思未来 | 半导体装置 |
JP6449082B2 (ja) | 2014-08-18 | 2019-01-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6640965B2 (ja) * | 2014-08-18 | 2020-02-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9478541B2 (en) * | 2014-09-08 | 2016-10-25 | Qualcomm Incorporated | Half node scaling for vertical structures |
US9607988B2 (en) | 2015-01-30 | 2017-03-28 | Qualcomm Incorporated | Off-center gate cut |
US9640480B2 (en) * | 2015-05-27 | 2017-05-02 | Qualcomm Incorporated | Cross-couple in multi-height sequential cells for uni-directional M1 |
US10177127B2 (en) * | 2015-09-04 | 2019-01-08 | Hong Kong Beida Jade Bird Display Limited | Semiconductor apparatus and method of manufacturing the same |
US10541243B2 (en) | 2015-11-19 | 2020-01-21 | Samsung Electronics Co., Ltd. | Semiconductor device including a gate electrode and a conductive structure |
US9748389B1 (en) | 2016-03-25 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for semiconductor device fabrication with improved source drain epitaxy |
US10262981B2 (en) * | 2016-04-29 | 2019-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit, system for and method of forming an integrated circuit |
US10236302B2 (en) * | 2016-06-22 | 2019-03-19 | Qualcomm Incorporated | Standard cell architecture for diffusion based on fin count |
US9972571B1 (en) * | 2016-12-15 | 2018-05-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Logic cell structure and method |
US10186510B2 (en) * | 2017-05-01 | 2019-01-22 | Advanced Micro Devices, Inc. | Vertical gate all around library architecture |
KR102336784B1 (ko) | 2017-06-09 | 2021-12-07 | 삼성전자주식회사 | 반도체 장치 |
JP7054013B2 (ja) * | 2017-06-27 | 2022-04-13 | 株式会社ソシオネクスト | 半導体集積回路装置 |
US10503863B2 (en) * | 2017-08-30 | 2019-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method of manufacturing same |
CN110998841A (zh) | 2017-09-20 | 2020-04-10 | 英特尔公司 | 多版本库单元处置以及由此制作的集成电路结构 |
US10468428B1 (en) * | 2018-04-19 | 2019-11-05 | Silicon Storage Technology, Inc. | Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making same |
US10818762B2 (en) * | 2018-05-25 | 2020-10-27 | Advanced Micro Devices, Inc. | Gate contact over active region in cell |
US11017146B2 (en) * | 2018-07-16 | 2021-05-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method of forming the same |
US10878165B2 (en) * | 2018-07-16 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for generating layout diagram including protruding pin cell regions and semiconductor device based on same |
US11093684B2 (en) * | 2018-10-31 | 2021-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power rail with non-linear edge |
US11030372B2 (en) | 2018-10-31 | 2021-06-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for generating layout diagram including cell having pin patterns and semiconductor device based on same |
US10796061B1 (en) * | 2019-08-29 | 2020-10-06 | Advanced Micro Devices, Inc. | Standard cell and power grid architectures with EUV lithography |
US11735525B2 (en) | 2019-10-21 | 2023-08-22 | Tokyo Electron Limited | Power delivery network for CFET with buried power rails |
US11600707B2 (en) | 2020-05-12 | 2023-03-07 | Micron Technology, Inc. | Methods of forming conductive pipes between neighboring features, and integrated assemblies having conductive pipes between neighboring features |
US11862620B2 (en) | 2020-09-15 | 2024-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power gating cell structure |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006090445A1 (ja) * | 2005-02-23 | 2006-08-31 | Fujitsu Limited | 半導体回路装置及びその半導体回路装置の製造方法 |
US20080001176A1 (en) * | 2006-06-29 | 2008-01-03 | Kailash Gopalakrishnan | Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices |
US20080308880A1 (en) * | 2007-06-15 | 2008-12-18 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20100287518A1 (en) * | 2009-05-06 | 2010-11-11 | Tela Innovations, Inc. | Cell Circuit and Layout with Linear Finfet Structures |
US20100301482A1 (en) * | 2009-06-01 | 2010-12-02 | Globalfoundries Inc. | Sram bit cell with self-aligned bidirectional local interconnects |
US20110317477A1 (en) * | 2010-06-25 | 2011-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cell structure for dual-port sram |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2720783B2 (ja) * | 1993-12-29 | 1998-03-04 | 日本電気株式会社 | 半導体集積回路 |
JP4437565B2 (ja) * | 1998-11-26 | 2010-03-24 | 富士通マイクロエレクトロニクス株式会社 | 半導体集積回路装置、半導体集積回路装置の設計方法、及び、記録媒体 |
JP2001306641A (ja) * | 2000-04-27 | 2001-11-02 | Victor Co Of Japan Ltd | 半導体集積回路の自動配置配線方法 |
US6662350B2 (en) * | 2002-01-28 | 2003-12-09 | International Business Machines Corporation | FinFET layout generation |
US6842048B2 (en) * | 2002-11-22 | 2005-01-11 | Advanced Micro Devices, Inc. | Two transistor NOR device |
US6921982B2 (en) * | 2003-07-21 | 2005-07-26 | International Business Machines Corporation | FET channel having a strained lattice structure along multiple surfaces |
US6924560B2 (en) * | 2003-08-08 | 2005-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Compact SRAM cell with FinFET |
JP2005116969A (ja) * | 2003-10-10 | 2005-04-28 | Toshiba Corp | 半導体装置及びその製造方法 |
KR100702552B1 (ko) * | 2003-12-22 | 2007-04-04 | 인터내셔널 비지네스 머신즈 코포레이션 | 이중 게이트 FinFET 디자인을 위한 자동화 레이어생성 방법 및 장치 |
US7830703B2 (en) * | 2004-06-04 | 2010-11-09 | Nec Corporation | Semiconductor device and manufacturing method thereof |
JP2007018588A (ja) * | 2005-07-06 | 2007-01-25 | Toshiba Corp | 半導体記憶装置および半導体記憶装置の駆動方法 |
DE102006027178A1 (de) * | 2005-11-21 | 2007-07-05 | Infineon Technologies Ag | Multi-Fin-Bauelement-Anordnung und Verfahren zum Herstellen einer Multi-Fin-Bauelement-Anordnung |
JPWO2007063990A1 (ja) * | 2005-12-02 | 2009-05-07 | 日本電気株式会社 | 半導体装置およびその製造方法 |
EP2092393A2 (en) * | 2006-11-14 | 2009-08-26 | Nxp B.V. | Double patterning for lithography to increase feature spatial density |
US7723786B2 (en) * | 2007-04-11 | 2010-05-25 | Ronald Kakoschke | Apparatus of memory array using FinFETs |
US7453125B1 (en) * | 2007-04-24 | 2008-11-18 | Infineon Technologies Ag | Double mesh finfet |
JP4461154B2 (ja) * | 2007-05-15 | 2010-05-12 | 株式会社東芝 | 半導体装置 |
US7625790B2 (en) * | 2007-07-26 | 2009-12-01 | International Business Machines Corporation | FinFET with sublithographic fin width |
US20090057780A1 (en) * | 2007-08-27 | 2009-03-05 | International Business Machines Corporation | Finfet structure including multiple semiconductor fin channel heights |
US8866254B2 (en) * | 2008-02-19 | 2014-10-21 | Micron Technology, Inc. | Devices including fin transistors robust to gate shorts and methods of making the same |
JP5638760B2 (ja) * | 2008-08-19 | 2014-12-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2010141047A (ja) * | 2008-12-10 | 2010-06-24 | Renesas Technology Corp | 半導体集積回路装置および半導体集積回路装置の製造方法 |
US8116121B2 (en) * | 2009-03-06 | 2012-02-14 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing methods with using non-planar type of transistors |
JP2010225768A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | 半導体装置 |
US8053299B2 (en) * | 2009-04-17 | 2011-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabrication of a FinFET element |
JP4751463B2 (ja) * | 2009-05-25 | 2011-08-17 | 本田技研工業株式会社 | 燃料電池システム |
US8637135B2 (en) * | 2009-11-18 | 2014-01-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Non-uniform semiconductor device active area pattern formation |
CN102074582B (zh) * | 2009-11-20 | 2013-06-12 | 台湾积体电路制造股份有限公司 | 集成电路结构及其形成方法 |
US8860107B2 (en) * | 2010-06-03 | 2014-10-14 | International Business Machines Corporation | FinFET-compatible metal-insulator-metal capacitor |
-
2013
- 2013-01-13 JP JP2014552360A patent/JP2015506589A/ja active Pending
- 2013-01-13 AU AU2013207719A patent/AU2013207719B2/en not_active Ceased
- 2013-01-13 CN CN201380013824.6A patent/CN104303263B/zh not_active Expired - Fee Related
- 2013-01-13 WO PCT/US2013/021345 patent/WO2013106799A1/en active Application Filing
- 2013-01-13 SG SG11201404024YA patent/SG11201404024YA/en unknown
- 2013-01-13 CN CN201611023356.2A patent/CN107424999A/zh active Pending
- 2013-01-13 EP EP13735704.2A patent/EP2803077A4/en not_active Withdrawn
- 2013-01-13 SG SG10201605564WA patent/SG10201605564WA/en unknown
- 2013-01-13 KR KR1020147022592A patent/KR101913457B1/ko active IP Right Grant
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006090445A1 (ja) * | 2005-02-23 | 2006-08-31 | Fujitsu Limited | 半導体回路装置及びその半導体回路装置の製造方法 |
US20080001176A1 (en) * | 2006-06-29 | 2008-01-03 | Kailash Gopalakrishnan | Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices |
US20080308880A1 (en) * | 2007-06-15 | 2008-12-18 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20100287518A1 (en) * | 2009-05-06 | 2010-11-11 | Tela Innovations, Inc. | Cell Circuit and Layout with Linear Finfet Structures |
US20100301482A1 (en) * | 2009-06-01 | 2010-12-02 | Globalfoundries Inc. | Sram bit cell with self-aligned bidirectional local interconnects |
US20110317477A1 (en) * | 2010-06-25 | 2011-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cell structure for dual-port sram |
Non-Patent Citations (2)
Title |
---|
KAWASAKI H ET AL: "Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond", ELECTRON DEVICES MEETING (IEDM), 2009 IEEE INTERNATIONAL, IEEE, PISCATAWAY, NJ, USA, 7 December 2009 (2009-12-07), pages 1 - 4, XP031644548, ISBN: 978-1-4244-5639-0 * |
See also references of WO2013106799A1 * |
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TWI552307B (zh) | 2016-10-01 |
AU2016202229B2 (en) | 2018-02-15 |
KR101913457B1 (ko) | 2018-10-30 |
TWI581403B (zh) | 2017-05-01 |
AU2013207719B2 (en) | 2016-02-25 |
TWI608593B (zh) | 2017-12-11 |
AU2018200549B2 (en) | 2019-12-05 |
CN104303263A (zh) | 2015-01-21 |
JP2015506589A (ja) | 2015-03-02 |
AU2020201521A1 (en) | 2020-03-19 |
TW201803084A (zh) | 2018-01-16 |
CN107424999A (zh) | 2017-12-01 |
TW201349451A (zh) | 2013-12-01 |
CN104303263B (zh) | 2016-12-14 |
TW201717355A (zh) | 2017-05-16 |
JP2017224858A (ja) | 2017-12-21 |
AU2018200549A1 (en) | 2018-02-15 |
AU2013207719A1 (en) | 2014-07-31 |
TW201642440A (zh) | 2016-12-01 |
WO2013106799A1 (en) | 2013-07-18 |
AU2016202229A1 (en) | 2016-05-05 |
JP6467476B2 (ja) | 2019-02-13 |
SG10201605564WA (en) | 2016-09-29 |
EP2803077A1 (en) | 2014-11-19 |
SG11201404024YA (en) | 2014-08-28 |
KR20140114424A (ko) | 2014-09-26 |
JP2019054297A (ja) | 2019-04-04 |
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