EP2587532A3 - Verbundener Strukturkörper von Elementen, Verbindungsverfahren von Elementen, und Verpackung zum Enthalten einer elektronischen Komponente - Google Patents

Verbundener Strukturkörper von Elementen, Verbindungsverfahren von Elementen, und Verpackung zum Enthalten einer elektronischen Komponente Download PDF

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Publication number
EP2587532A3
EP2587532A3 EP12178910.1A EP12178910A EP2587532A3 EP 2587532 A3 EP2587532 A3 EP 2587532A3 EP 12178910 A EP12178910 A EP 12178910A EP 2587532 A3 EP2587532 A3 EP 2587532A3
Authority
EP
European Patent Office
Prior art keywords
members
electronic component
structural body
package
joining portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12178910.1A
Other languages
English (en)
French (fr)
Other versions
EP2587532A2 (de
Inventor
Kazutaka Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of EP2587532A2 publication Critical patent/EP2587532A2/de
Publication of EP2587532A3 publication Critical patent/EP2587532A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48105—Connecting bonding areas at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/48155—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48157—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13062—Junction field-effect transistor [JFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12458—All metal or with adjacent metals having composition, density, or hardness gradient

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
EP12178910.1A 2011-10-26 2012-08-01 Verbundener Strukturkörper von Elementen, Verbindungsverfahren von Elementen, und Verpackung zum Enthalten einer elektronischen Komponente Withdrawn EP2587532A3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011235385A JP5588419B2 (ja) 2011-10-26 2011-10-26 パッケージ

Publications (2)

Publication Number Publication Date
EP2587532A2 EP2587532A2 (de) 2013-05-01
EP2587532A3 true EP2587532A3 (de) 2014-02-19

Family

ID=47002542

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12178910.1A Withdrawn EP2587532A3 (de) 2011-10-26 2012-08-01 Verbundener Strukturkörper von Elementen, Verbindungsverfahren von Elementen, und Verpackung zum Enthalten einer elektronischen Komponente

Country Status (6)

Country Link
US (2) US20130105205A1 (de)
EP (1) EP2587532A3 (de)
JP (1) JP5588419B2 (de)
KR (1) KR101476504B1 (de)
CN (1) CN103077934B (de)
TW (1) TWI471986B (de)

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JP5885690B2 (ja) 2012-04-27 2016-03-15 キヤノン株式会社 電子部品および電子機器
JP2013243340A (ja) * 2012-04-27 2013-12-05 Canon Inc 電子部品、実装部材、電子機器およびこれらの製造方法
JP6296687B2 (ja) 2012-04-27 2018-03-20 キヤノン株式会社 電子部品、電子モジュールおよびこれらの製造方法。
JP2014207388A (ja) 2013-04-15 2014-10-30 株式会社東芝 半導体パッケージ
JP2014207389A (ja) 2013-04-15 2014-10-30 株式会社東芝 半導体パッケージ
JP2015165527A (ja) * 2014-02-28 2015-09-17 株式会社東芝 半導体装置及びその製造方法
CN105448869A (zh) 2014-07-31 2016-03-30 天工方案公司 多层瞬态液相接合
US20160105984A1 (en) * 2014-10-09 2016-04-14 International Rectifier Corporation Power Unit with Conductive Slats
JP6365215B2 (ja) * 2014-10-15 2018-08-01 三菱電機株式会社 半導体装置の製造方法
JP6273247B2 (ja) * 2015-12-03 2018-01-31 株式会社東芝 高周波半導体増幅器
CN105537756B (zh) * 2016-01-29 2018-06-26 山东大学 一种铜与锌基合金的低温真空扩散连接方法
JP6412900B2 (ja) * 2016-06-23 2018-10-24 株式会社東芝 高周波半導体用パッケージ
CN106252422A (zh) * 2016-08-23 2016-12-21 太仓市威士达电子有限公司 一种用于光电器件封装的金属外壳
JP2018113679A (ja) * 2016-12-02 2018-07-19 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. 基板間のキャビティ内に形成されてビアを含む電子デバイスを製造する方法
TWI683604B (zh) * 2016-12-23 2020-01-21 德商德國艾托特克公司 於接觸墊上形成可焊接焊料沉積物的方法及在活化接觸墊上暴露可焊接焊料沉積物之印刷電路板
WO2019006101A1 (en) * 2017-06-30 2019-01-03 Kyocera International, Inc. MICROELECTRONIC BUILDING CONSTRUCTION ACTIVATED BY REINFORCING AND DESIGNING CERAMIC INSULATION
CN108366500A (zh) * 2018-01-03 2018-08-03 佛山杰致信息科技有限公司 一种电子元器件保护结构
KR102325114B1 (ko) * 2019-12-06 2021-11-11 제엠제코(주) 반도체 패키지의 제조 방법

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JP2005274560A (ja) * 2004-02-27 2005-10-06 Fuji Electric Holdings Co Ltd 放射線検出器用フィルタの実装方法
US20070042211A1 (en) * 2005-08-17 2007-02-22 Sun Microsystems, Inc. Ternary alloy column grid array
WO2008041350A1 (en) * 2006-09-29 2008-04-10 Kabushiki Kaisha Toshiba Joint with first and second members with a joining layer located therebetween containing sn metal and another metallic material; methods for forming the same joint
US20080176096A1 (en) * 2007-01-22 2008-07-24 Yen-Hang Cheng Solderable layer and a method for manufacturing the same
EP2157605A1 (de) * 2007-06-04 2010-02-24 Murata Manufacturing Co. Ltd. Elektronikteilevorrichtung und prozess zu ihrer herstellung
EP2259307A2 (de) * 2009-06-02 2010-12-08 Napra co.,Ltd Elektronische Vorrichtung, leitfähige Zusammensetzung, Metallfüllvorrichtung und Herstellungsverfahren für elektronische Vorrichtung
EP2363373A1 (de) * 2010-03-02 2011-09-07 SensoNor Technologies AS Procédé de collage pour systèmes micro et nano sensibles

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JP2014207389A (ja) * 2013-04-15 2014-10-30 株式会社東芝 半導体パッケージ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020090756A1 (en) * 2000-10-04 2002-07-11 Masamoto Tago Semiconductor device and method of manufacturing the same
JP2005274560A (ja) * 2004-02-27 2005-10-06 Fuji Electric Holdings Co Ltd 放射線検出器用フィルタの実装方法
US20070042211A1 (en) * 2005-08-17 2007-02-22 Sun Microsystems, Inc. Ternary alloy column grid array
WO2008041350A1 (en) * 2006-09-29 2008-04-10 Kabushiki Kaisha Toshiba Joint with first and second members with a joining layer located therebetween containing sn metal and another metallic material; methods for forming the same joint
US20080176096A1 (en) * 2007-01-22 2008-07-24 Yen-Hang Cheng Solderable layer and a method for manufacturing the same
EP2157605A1 (de) * 2007-06-04 2010-02-24 Murata Manufacturing Co. Ltd. Elektronikteilevorrichtung und prozess zu ihrer herstellung
EP2259307A2 (de) * 2009-06-02 2010-12-08 Napra co.,Ltd Elektronische Vorrichtung, leitfähige Zusammensetzung, Metallfüllvorrichtung und Herstellungsverfahren für elektronische Vorrichtung
EP2363373A1 (de) * 2010-03-02 2011-09-07 SensoNor Technologies AS Procédé de collage pour systèmes micro et nano sensibles

Also Published As

Publication number Publication date
EP2587532A2 (de) 2013-05-01
CN103077934A (zh) 2013-05-01
JP2013093472A (ja) 2013-05-16
US20130105205A1 (en) 2013-05-02
KR101476504B1 (ko) 2014-12-24
TWI471986B (zh) 2015-02-01
TW201330192A (zh) 2013-07-16
US9357644B2 (en) 2016-05-31
US20150043186A1 (en) 2015-02-12
JP5588419B2 (ja) 2014-09-10
KR20130045797A (ko) 2013-05-06
CN103077934B (zh) 2016-05-18

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