EP2287924A3 - Structures de substrat et procédés de fabrication - Google Patents
Structures de substrat et procédés de fabrication Download PDFInfo
- Publication number
- EP2287924A3 EP2287924A3 EP10172937A EP10172937A EP2287924A3 EP 2287924 A3 EP2287924 A3 EP 2287924A3 EP 10172937 A EP10172937 A EP 10172937A EP 10172937 A EP10172937 A EP 10172937A EP 2287924 A3 EP2287924 A3 EP 2287924A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- manufacturing
- methods
- same
- buffer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
- H01L21/0265—Pendeoepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090075733A KR101640830B1 (ko) | 2009-08-17 | 2009-08-17 | 기판 구조체 및 그 제조 방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2287924A2 EP2287924A2 (fr) | 2011-02-23 |
EP2287924A3 true EP2287924A3 (fr) | 2012-12-19 |
EP2287924B1 EP2287924B1 (fr) | 2019-02-27 |
Family
ID=43012792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10172937.4A Active EP2287924B1 (fr) | 2009-08-17 | 2010-08-16 | Structure de substrat et son procédé de fabrication |
Country Status (5)
Country | Link |
---|---|
US (1) | US8716749B2 (fr) |
EP (1) | EP2287924B1 (fr) |
JP (1) | JP5571503B2 (fr) |
KR (1) | KR101640830B1 (fr) |
CN (1) | CN101997071B (fr) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
KR20120004159A (ko) | 2010-07-06 | 2012-01-12 | 삼성전자주식회사 | 기판구조체 및 그 제조방법 |
TW201214802A (en) * | 2010-09-27 | 2012-04-01 | Nat Univ Chung Hsing | Patterned substrate and LED formed using the same |
CN102208440B (zh) * | 2011-06-03 | 2013-03-27 | 清华大学 | 半导体结构及其形成方法 |
CN102263178A (zh) * | 2011-06-03 | 2011-11-30 | 王楚雯 | 外延片及其形成方法 |
JP2013084643A (ja) * | 2011-10-06 | 2013-05-09 | Nano Material Kenkyusho:Kk | 半導体製造装置及び製造方法 |
KR20140073646A (ko) * | 2012-12-04 | 2014-06-17 | 서울바이오시스 주식회사 | 단결정 질화갈륨 기판 및 그 제조 방법 |
US9397314B2 (en) * | 2013-12-23 | 2016-07-19 | Universal Display Corporation | Thin-form light-enhanced substrate for OLED luminaire |
DE102014102461A1 (de) * | 2014-02-25 | 2015-08-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Halbleiterschichtenfolge und optoelektronisches Halbleiterbauteil |
JP2015176963A (ja) | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 半導体発光装置 |
JP2017533574A (ja) | 2014-09-18 | 2017-11-09 | インテル・コーポレーション | シリコンcmos互換性半導体装置における欠陥伝播制御のための傾斜側壁カット面を有するウルツ鉱ヘテロエピタキシャル構造物 |
EP3198649A4 (fr) | 2014-09-25 | 2018-05-16 | Intel Corporation | Structures de dispositif d'épitaxie iii-n sur des structures mesa de silicium autoportants |
US10056456B2 (en) | 2014-12-18 | 2018-08-21 | Intel Corporation | N-channel gallium nitride transistors |
KR102443030B1 (ko) * | 2015-05-27 | 2022-09-16 | 삼성전자주식회사 | 반도체 기판의 제조 방법 및 반도체 성장용 기판 |
US9666754B2 (en) * | 2015-05-27 | 2017-05-30 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor substrate and substrate for semiconductor growth |
KR102378823B1 (ko) | 2015-09-07 | 2022-03-28 | 삼성전자주식회사 | 반도체 기판 및 이를 이용한 반도체 발광소자의 제조 방법 |
CN105445854B (zh) * | 2015-11-06 | 2018-09-25 | 南京邮电大学 | 硅衬底悬空led光波导集成光子器件及其制备方法 |
JP6686876B2 (ja) * | 2016-12-28 | 2020-04-22 | 豊田合成株式会社 | 半導体構造体および半導体素子 |
US11233053B2 (en) | 2017-09-29 | 2022-01-25 | Intel Corporation | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
WO2019199144A1 (fr) * | 2018-04-13 | 2019-10-17 | 주식회사 소프트에피 | Tranche pour dispositif électroluminescent à semi-conducteur et procédé de fabrication d'un panneau de dispositif électroluminescent à semi-conducteur à l'aide de celle-ci |
US10566493B1 (en) | 2018-07-31 | 2020-02-18 | International Business Machines Corporation | Device with integration of light-emitting diode, light sensor, and bio-electrode sensors on a substrate |
EP3939069A4 (fr) * | 2019-03-13 | 2022-05-04 | The Regents of the University of California | Substrat pour un retrait de dispositifs à l'aide de parties de lacune |
CN114072895A (zh) * | 2019-06-25 | 2022-02-18 | 苏州晶湛半导体有限公司 | 发光器件、发光器件的模板及其制备方法 |
CN110931608B (zh) * | 2019-12-13 | 2021-07-30 | 深圳第三代半导体研究院 | 衬底、led及其制造方法 |
CN114864774B (zh) * | 2022-06-07 | 2023-10-20 | 淮安澳洋顺昌光电技术有限公司 | 图形化衬底的制备方法及具有空气隙的led外延结构 |
CN117832347B (zh) * | 2024-03-04 | 2024-05-14 | 江西兆驰半导体有限公司 | 一种Micro-LED外延片及其制备方法、LED芯片 |
Citations (7)
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US6261929B1 (en) * | 2000-02-24 | 2001-07-17 | North Carolina State University | Methods of forming a plurality of semiconductor layers using spaced trench arrays |
US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
US20010025989A1 (en) * | 2000-01-13 | 2001-10-04 | Katsuyoshi Shibuya | Semiconductor device and method of manufacturing the same |
US6489221B2 (en) * | 1999-11-17 | 2002-12-03 | North Carolina State University | High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
WO2007001141A1 (fr) * | 2005-06-25 | 2007-01-04 | Epiplus Co., Ltd. | Dispositif d’émission de lumière à semi-conducteurs ayant une luminance lumineuse améliorée et son procédé de production |
US20080048196A1 (en) * | 2005-03-07 | 2008-02-28 | Technische Universitat Berlin | Component and Process for Manufacturing the Same |
US20080197358A1 (en) * | 2007-02-19 | 2008-08-21 | Alcatel-Lucent | Wide-bandgap semiconductor devices |
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US4806996A (en) * | 1986-04-10 | 1989-02-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Dislocation-free epitaxial layer on a lattice-mismatched porous or otherwise submicron patterned single crystal substrate |
JP2938607B2 (ja) | 1991-04-18 | 1999-08-23 | 松下電器産業株式会社 | 発光素子 |
JP2938608B2 (ja) | 1991-04-18 | 1999-08-23 | 松下電器産業株式会社 | 発光素子 |
DE69204828T2 (de) * | 1992-06-09 | 1996-05-02 | Ibm | Herstellung von Laserdioden mit durch Spaltung erzeugten Stirnflächen auf einem vollständigen Wafer. |
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US6596377B1 (en) * | 2000-03-27 | 2003-07-22 | Science & Technology Corporation @ Unm | Thin film product and method of forming |
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FR2860248B1 (fr) * | 2003-09-26 | 2006-02-17 | Centre Nat Rech Scient | Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle |
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-
2009
- 2009-08-17 KR KR1020090075733A patent/KR101640830B1/ko active IP Right Grant
-
2010
- 2010-08-12 US US12/805,674 patent/US8716749B2/en active Active
- 2010-08-16 EP EP10172937.4A patent/EP2287924B1/fr active Active
- 2010-08-17 CN CN201010256572.8A patent/CN101997071B/zh active Active
- 2010-08-17 JP JP2010182292A patent/JP5571503B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
US6489221B2 (en) * | 1999-11-17 | 2002-12-03 | North Carolina State University | High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
US20010025989A1 (en) * | 2000-01-13 | 2001-10-04 | Katsuyoshi Shibuya | Semiconductor device and method of manufacturing the same |
US6261929B1 (en) * | 2000-02-24 | 2001-07-17 | North Carolina State University | Methods of forming a plurality of semiconductor layers using spaced trench arrays |
US20080048196A1 (en) * | 2005-03-07 | 2008-02-28 | Technische Universitat Berlin | Component and Process for Manufacturing the Same |
WO2007001141A1 (fr) * | 2005-06-25 | 2007-01-04 | Epiplus Co., Ltd. | Dispositif d’émission de lumière à semi-conducteurs ayant une luminance lumineuse améliorée et son procédé de production |
US20080197358A1 (en) * | 2007-02-19 | 2008-08-21 | Alcatel-Lucent | Wide-bandgap semiconductor devices |
Non-Patent Citations (1)
Title |
---|
KATONA T M ET AL: "Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 81, no. 19, 4 November 2002 (2002-11-04), pages 3558 - 3560, XP012032375, ISSN: 0003-6951, DOI: 10.1063/1.1519943 * |
Also Published As
Publication number | Publication date |
---|---|
KR20110018105A (ko) | 2011-02-23 |
CN101997071A (zh) | 2011-03-30 |
EP2287924A2 (fr) | 2011-02-23 |
KR101640830B1 (ko) | 2016-07-22 |
EP2287924B1 (fr) | 2019-02-27 |
JP5571503B2 (ja) | 2014-08-13 |
US8716749B2 (en) | 2014-05-06 |
CN101997071B (zh) | 2015-06-10 |
JP2011040760A (ja) | 2011-02-24 |
US20110037098A1 (en) | 2011-02-17 |
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