CN114072895A - 发光器件、发光器件的模板及其制备方法 - Google Patents
发光器件、发光器件的模板及其制备方法 Download PDFInfo
- Publication number
- CN114072895A CN114072895A CN201980097776.0A CN201980097776A CN114072895A CN 114072895 A CN114072895 A CN 114072895A CN 201980097776 A CN201980097776 A CN 201980097776A CN 114072895 A CN114072895 A CN 114072895A
- Authority
- CN
- China
- Prior art keywords
- light emitting
- template
- emitting device
- layer
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 113
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000005530 etching Methods 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 208
- 229910002601 GaN Inorganic materials 0.000 description 60
- 238000010586 diagram Methods 0.000 description 21
- 238000004020 luminiscence type Methods 0.000 description 9
- 238000012546 transfer Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000002699 waste material Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000008439 repair process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 239000007771 core particle Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Semiconductor Memories (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
一种发光器件、发光器件的模板及其制备方法，通过在衬底(1)上设置GaN基半导体层(2)和掩膜层(3)，其中掩膜层(3)包括多个间隔设置的掩膜开孔，且使用GaN基半导体层(2)填充掩膜开孔；并且在多个间隔设置的掩膜开孔内的GaN基半导体层(2)表面设置牺牲层(4)，利用间隔设置掩膜开孔，可以直接在掩膜开孔上形成间隔的发光单元(5)，避免侧壁刻蚀，提高了发光器件的发光效率，并且通过刻蚀牺牲层(4)来剥离发光器件，实现模板的重复利用，降低成本。
Description
PCT国内申请，说明书已公开。
Claims (21)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/092785 WO2020258027A1 (zh) | 2019-06-25 | 2019-06-25 | 发光器件、发光器件的模板及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114072895A true CN114072895A (zh) | 2022-02-18 |
Family
ID=74059839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980097776.0A Pending CN114072895A (zh) | 2019-06-25 | 2019-06-25 | 发光器件、发光器件的模板及其制备方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20220115561A1 (zh) |
| CN (1) | CN114072895A (zh) |
| TW (1) | TWI804742B (zh) |
| WO (1) | WO2020258027A1 (zh) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1221205A (zh) * | 1997-12-26 | 1999-06-30 | 索尼株式会社 | 半导体基片和薄膜半导体部件及它们的制造方法 |
| US20040219702A1 (en) * | 2001-03-29 | 2004-11-04 | Seiji Nagai | Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device |
| US20090072250A1 (en) * | 2006-03-08 | 2009-03-19 | Rohm Co., Ltd. | Chip type semiconductor light emitting device |
| CN101494267A (zh) * | 2008-11-24 | 2009-07-29 | 厦门市三安光电科技有限公司 | 一种基于衬底剥离的氮化镓基发光器件的制作方法 |
| CN107369746A (zh) * | 2017-08-30 | 2017-11-21 | 华南理工大学 | 一种化学腐蚀剥离衬底的微尺寸谐振腔led芯片及其制备方法 |
| CN107833954A (zh) * | 2016-09-15 | 2018-03-23 | 伊乐视有限公司 | 具有表面贴装发光元件的显示器 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1104031B1 (en) * | 1999-11-15 | 2012-04-11 | Panasonic Corporation | Nitride semiconductor laser diode and method of fabricating the same |
| JP4284188B2 (ja) * | 2001-12-20 | 2009-06-24 | パナソニック株式会社 | 窒化物系半導体基板の製造方法および窒化物系半導体装置の製造方法 |
| TWI336141B (en) * | 2006-12-27 | 2011-01-11 | Light-emitting diode and method for manufacturing the same | |
| JP2008297191A (ja) * | 2007-05-02 | 2008-12-11 | Sumitomo Electric Ind Ltd | 窒化ガリウム基板及び窒化ガリウム層の形成方法 |
| JPWO2009088084A1 (ja) * | 2008-01-11 | 2011-05-26 | ローム株式会社 | 半導体発光装置 |
| JP2009283807A (ja) * | 2008-05-26 | 2009-12-03 | Canon Inc | 窒化物半導体層を含む構造体、窒化物半導体層を含む複合基板、及びこれらの製造方法 |
| US8008683B2 (en) * | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
| KR101640830B1 (ko) * | 2009-08-17 | 2016-07-22 | 삼성전자주식회사 | 기판 구조체 및 그 제조 방법 |
| JP5603813B2 (ja) * | 2011-03-15 | 2014-10-08 | 株式会社東芝 | 半導体発光装置及び発光装置 |
| WO2014061940A1 (en) * | 2012-10-15 | 2014-04-24 | Seoul Viosys Co., Ltd. | Semiconductor device and method of fabricating the same |
| CN106299095A (zh) * | 2015-06-12 | 2017-01-04 | 映瑞光电科技(上海)有限公司 | 一种高压倒装led芯片及其制作方法 |
| CN105428471A (zh) * | 2015-11-12 | 2016-03-23 | 晶能光电（江西）有限公司 | 薄膜倒装led芯片及其制备方法以及白光led芯片 |
| CN108649046B (zh) * | 2018-05-08 | 2021-04-06 | 厦门乾照光电股份有限公司 | 半导体发光微显示器件及其制造方法以及衬底剥离方法 |
-
2019
- 2019-06-25 CN CN201980097776.0A patent/CN114072895A/zh active Pending
- 2019-06-25 WO PCT/CN2019/092785 patent/WO2020258027A1/zh active Application Filing
-
2020
- 2020-06-22 TW TW109121122A patent/TWI804742B/zh active
-
2021
- 2021-12-20 US US17/555,916 patent/US20220115561A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1221205A (zh) * | 1997-12-26 | 1999-06-30 | 索尼株式会社 | 半导体基片和薄膜半导体部件及它们的制造方法 |
| US20040219702A1 (en) * | 2001-03-29 | 2004-11-04 | Seiji Nagai | Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device |
| US20090072250A1 (en) * | 2006-03-08 | 2009-03-19 | Rohm Co., Ltd. | Chip type semiconductor light emitting device |
| CN101494267A (zh) * | 2008-11-24 | 2009-07-29 | 厦门市三安光电科技有限公司 | 一种基于衬底剥离的氮化镓基发光器件的制作方法 |
| CN107833954A (zh) * | 2016-09-15 | 2018-03-23 | 伊乐视有限公司 | 具有表面贴装发光元件的显示器 |
| CN107369746A (zh) * | 2017-08-30 | 2017-11-21 | 华南理工大学 | 一种化学腐蚀剥离衬底的微尺寸谐振腔led芯片及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020258027A1 (zh) | 2020-12-30 |
| US20220115561A1 (en) | 2022-04-14 |
| TWI804742B (zh) | 2023-06-11 |
| TW202117999A (zh) | 2021-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10586829B2 (en) | Full-color monolithic micro-LED pixels | |
| EP3486946B1 (en) | Growth substrate including micro-light emitting diode chips and method of manufacturing light emitting diode display using the same | |
| US9385266B2 (en) | Method of manufacturing a nanostructure light emitting device by planarizing a surface of the device | |
| KR100649769B1 (ko) | 반도체 발광 다이오드 및 그 제조 방법 | |
| KR101282775B1 (ko) | 수직형 발광 소자 및 그 제조방법 | |
| US8785905B1 (en) | Amber light-emitting diode comprising a group III-nitride nanowire active region | |
| WO2013015472A1 (ko) | 반도체 발광소자 및 그 제조방법 | |
| TWI803827B (zh) | 高分辨率單體式ｒｇｂ陣列 | |
| US20190058002A1 (en) | Finfets for light emitting diode displays | |
| US8044416B2 (en) | Method for fabricating high-power light-emitting diode arrays | |
| KR101525913B1 (ko) | 수직구조 발광다이오드 및 이의 제조방법 | |
| CN102751402A (zh) | 半导体发光元件和发光元件的制造方法 | |
| CN114072895A (zh) | 发光器件、发光器件的模板及其制备方法 | |
| CN112289899B (zh) | Micro LED晶圆结构及其制备方法 | |
| CN110957204A (zh) | Iii族氮化物光电子器件的制作方法 | |
| CN111785813B (zh) | 一种基于立体掩模衬底的MicroLED制备方法 | |
| JP2023553850A (ja) | 電圧制御可能なモノリシックネイティブｒｇｂアレイ | |
| WO2010076929A1 (ko) | 에어갭층을 갖는 발광소자 및 그 제조방법 | |
| KR20140085195A (ko) | 복수개의 단위 발광소자들을 갖는 발광다이오드 | |
| US8253160B2 (en) | Light-emitting diode chip structure and fabrication method thereof | |
| KR20110091245A (ko) | 반도체 발광소자 및 그 제조방법 | |
| CN114424350A (zh) | 发光二极管阵列 | |
| WO2022067530A1 (zh) | 发光二极管芯片、显示基板及其制作方法 | |
| KR102463022B1 (ko) | 나노로드 led의 제조방법 | |
| WO2022011635A1 (zh) | 半导体结构及其制作方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |