WO2007001141A1 - Dispositif d’émission de lumière à semi-conducteurs ayant une luminance lumineuse améliorée et son procédé de production - Google Patents

Dispositif d’émission de lumière à semi-conducteurs ayant une luminance lumineuse améliorée et son procédé de production Download PDF

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Publication number
WO2007001141A1
WO2007001141A1 PCT/KR2006/002468 KR2006002468W WO2007001141A1 WO 2007001141 A1 WO2007001141 A1 WO 2007001141A1 KR 2006002468 W KR2006002468 W KR 2006002468W WO 2007001141 A1 WO2007001141 A1 WO 2007001141A1
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WO
WIPO (PCT)
Prior art keywords
substrate
light emitting
emitting device
semiconductor light
semiconductor
Prior art date
Application number
PCT/KR2006/002468
Other languages
English (en)
Inventor
Hyeong-Soo Park
Original Assignee
Epiplus Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epiplus Co., Ltd. filed Critical Epiplus Co., Ltd.
Priority to US11/993,019 priority Critical patent/US20100015739A1/en
Priority claimed from KR1020060057530A external-priority patent/KR100797180B1/ko
Publication of WO2007001141A1 publication Critical patent/WO2007001141A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Definitions

  • the present invention relates, in general, to a semiconductor light emitting device having improved luminance and a method of manufacturing the semiconductor light emitting device and, more particularly, to a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device, which increase scattering efficiency while reducing crystal defects, thus improving luminance.
  • GaN Gallium Nitride
  • the growth of the GaN semiconductor film occurs both in the part of the substrate, on which patterns are formed (that is, an etched part) and in the other part of the substrate, on which patterns are not formed (that is, a non-etched part) , or occurs only on a surface parallel to the substrate.
  • surfaces grown from different seed crystals meet each other.
  • a new crystal defect, such as dislocation occurs at the interface between the grown surfaces.
  • crystal defects, such as dislocation or stacking faults occur at the interfaces between patterns (regions ⁇ a' , ⁇ b' , ⁇ c' , and M' in FIG. 1) .
  • a plurality of defects occurs at the interfaces on which GaN islands beginning to grow on respective surfaces meet each other.
  • an object of the present invention is to provide a high luminance semiconductor light emitting device, which improves light extraction efficiency while reducing crystal defects.
  • step (a) may comprise the steps of (al) forming a sacrificial layer on the substrate,
  • a semiconductor light emitting device including a substrate and a plurality of semiconductor films sequentially formed on the substrate, wherein a surface of the substrate, on which the semiconductor films are formed, comprises a plurality of voids formed therein, the voids being used as reflectors for light generated from the semiconductor light emitting device.
  • a method of manufacturing a semiconductor light emitting device is constructed so that deep trenches are formed in the surface of a substrate and function as voids within the light emitting device, so that the voids act as reflectors for light rays generated within the device, thus increasing the external quantum efficiency of the semiconductor light emitting device, and consequently improving luminance.
  • a method of manufacturing a semiconductor light emitting device according to the present invention is constructed so that voids are formed in the surface of a substrate to improve luminance, so that crystal defects seldom occur on a semiconductor film (GaN) grown on the substrate, unlike the prior art, in which luminance is improved by forming patterns, such as uneven parts, on the surface of a substrate.
  • the internal quantum efficiency of the semiconductor light emitting device is also increased through the manufacturing method according to the present invention.
  • patterns, such as uneven parts are not formed on the surface of a substrate, so that the top surface of a semiconductor film (GaN) grown on the substrate is almost completely planarized, thus minimizing the growth of an additional GaN semiconductor film required in order to obtain a planarized surface.
  • the use of materials and time required to grow the additional GaN semiconductor film can be minimized.
  • the growth of the GaN semiconductor film on the substrate is minimized, so that the bending of the substrate can be reduced, thus yield can be improved.
  • the area of the interface between a substrate and a semiconductor light emitting device on the substrate is reduced due to voids formed in the surface of the substrate when the substrate and the semiconductor light emitting device are separated, thus easily separating the substrate and the semiconductor light emitting device.
  • FIG. 1 is a sectional view showing an example of defects occurring in a conventional semiconductor light emitting device having typical patterns
  • FIG. 2 illustrates sectional views showing examples of the shapes of trenches formed in the substrate of a semiconductor light emitting device according to an embodiment of the present invention
  • FIG. 3 illustrates sectional views sequentially showing a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention
  • FIG. 4 illustrates a Scanning Electron Microscope (SEM) photograph showing a section of a device manufactured through the method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
  • SEM Scanning Electron Microscope
  • the semiconductor light emitting device manufactured according to the present invention may be a Light Emitting Diode (LED), etc.
  • FIG. 2 illustrates sectional views showing examples of the shapes of deep trenches formed in a substrate manufactured using the method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
  • FIG. 2 (a) illustrates ⁇ V -shaped deep trenches
  • FIG. 2 (b) illustrates ⁇ U ' - shaped deep trenches .
  • FIG. 3 illustrates sectional views sequentially showing the method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
  • a sacrificial layer 310 such as an oxide film or a nitride film, is formed on a sapphire substrate 300.
  • a mask having predetermined patterns is formed on the sacrificial layer using a photo lithography process.
  • the sacrificial layer 310 is etched using the mask, and thus it is patterned.
  • a sapphire substrate is exemplified and described as a substrate, but any material that can be used as the substrate of a nitride semiconductor light emitting device, such as GaN, SiC, Si or ZrB 2 , can be variously applied to the substrate.
  • the surface of the substrate 300 is etched using the patterned sacrificial layer 310 as a mask, so that a plurality of deep trenches 320, 321 and 322 is formed in the surface of the substrate.
  • the surface of the substrate is etched as deeply as possible to cause the trenches to be formed as deeply as possible, thus forming voids that prevent a GaN semiconductor film from being grown in the trenches even if the GaN semiconductor film is grown on the substrate in a subsequent manufacturing process.
  • the trenches when the bottom surfaces of the trenches are parallel to the surface of the substrate, the trenches must be formed deeply to the extent that GaN crystals grown on the bottom surfaces of the trenches cannot merge with GaN crystals grown on the top surface of the substrate.
  • the GaN semiconductor film when a GaN semiconductor film is grown on a sapphire substrate, the GaN semiconductor film is grown in a C-plane, parallel to the sapphire substrate. Therefore, it is preferable that the sides of the trenches according to the present invention be etched in a direction in which GaN crystals are not easily grown, or at least be etched in a direction that is not parallel to the C-plane.
  • the sacrificial layer 310 is removed.
  • the surface of the GaN semiconductor film is planarized.
  • GaN crystals are grown only on the surface of the substrate, in which the trenches are not formed, and are not grown in the trenches at an initial stage.
  • the grown GaN crystals 330 are used as seeds, and GaN crystals are grown in the lateral direction of the grown GaN crystals.
  • GaN crystals, grown in adjacent regions meet and merge with each other, so that a GaN semiconductor film 340 is formed on the substrate.
  • the voids act as reflectors for reflecting light rays generated by the semiconductor light emitting device. That is, as the light rays generated from the active layer of the semiconductor light emitting device are incident on the voids, and are diffracted or scattered to be emitted to the outside of the device, the light extraction efficiency
  • the luminance of the corresponding device can be improved.
  • a method of manufacturing a semiconductor light emitting device further includes the step of separating the substrate from the semiconductor light emitting device after completing the semiconductor light emitting device through the manufacturing process according to the preferred embodiment of the present invention.
  • the manufacturing method according to the embodiment of the present invention reduces the area of the interface between the substrate and the semiconductor film formed on the substrate due to the voids formed in the surface of the substrate when separating the substrate, thus facilitating the separation of the substrate and the semiconductor light emitting device.
  • the preferred embodiments of the present invention have been disclosed for illustrative purposes, the embodiments are only exemplified, but do not limit the present invention.
  • Those skilled in the art will appreciate that various modifications and applications are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.
  • the type of substrate, the depth of trenches, the slope of the sides of trenches, an etching method, etc. can be variously modified and implemented so as to improve the performance of a semiconductor light emitting device, such as luminance.
  • differences related to such modifications and applications should be interpreted as being included in the scope of the present invention defined by the accompanying claims.
  • a manufacturing method according to the present invention can be widely used in the fields of a Light Emitting Diode (LED) having high luminance characteristics .
  • LED Light Emitting Diode

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Abstract

La présente invention se réfère à un dispositif d’émission de lumière à semi-conducteurs et à un procédé de fabrication de celui-ci. Dans le procédé de fabrication du dispositif d’émission de lumière à semi-conducteurs de la présente invention, une surface d’un substrat (300), sur laquelle le dispositif d’émission de lumière à semi-conducteurs est sur le point d’être fabriqué, est gravée, formant ainsi une pluralité de tranchées profondes (320, 321 et 322). Une pluralité de films à semi-conducteurs est développée sur la surface du substrat dans lequel les tranchées profondes sont formées. Les tranchées profondes sont formées afin d’avoir une profondeur prédéterminée de manière à ce que, même si les films à semi-conducteurs sont développés sur la surface du substrat, une pluralité de vides (350, 351 et 352) soit formée dans des régions du substrat dans lequel les tranchées sont formées, et les vides soient utilisés comme réflecteurs de la lumière générée par le dispositif d’émission de lumière à semi-conducteurs.
PCT/KR2006/002468 2005-06-25 2006-06-26 Dispositif d’émission de lumière à semi-conducteurs ayant une luminance lumineuse améliorée et son procédé de production WO2007001141A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/993,019 US20100015739A1 (en) 2005-06-25 2006-06-26 Semiconductor light emitting device having improved luminance and manufacturing method thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2005-0055372 2005-06-25
KR20050055372 2005-06-25
KR10-2006-0057530 2006-06-26
KR1020060057530A KR100797180B1 (ko) 2005-06-25 2006-06-26 휘도가 향상된 반도체 발광 소자 및 그 제조 방법

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WO2007001141A1 true WO2007001141A1 (fr) 2007-01-04

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101807646A (zh) * 2010-03-22 2010-08-18 徐瑾 用空气形成图形衬底的高效率发光二极管及其制备方法
EP2226857A1 (fr) * 2009-03-02 2010-09-08 LG Innotek Co., Ltd. Dispositif électroluminescent semi-conducteur et système d'éclairage l'incluant
CN101901861A (zh) * 2009-05-29 2010-12-01 索尼公司 发光二极管及其制造方法
EP2333848A1 (fr) * 2009-12-10 2011-06-15 LG Innotek Co., Ltd. Dispositif électroluminescent et conditionnement de dispositif électroluminescent
CN102544287A (zh) * 2010-12-10 2012-07-04 晶元光电股份有限公司 光电元件及其制造方法
EP2287924A3 (fr) * 2009-08-17 2012-12-19 Samsung Electronics Co., Ltd. Structures de substrat et procédés de fabrication
EP2551922A3 (fr) * 2011-07-27 2013-11-06 Lextar Electronics Corp. Structure de diode électroluminescente et son procédé de fabrication
KR101338698B1 (ko) 2007-04-16 2013-12-06 엘지이노텍 주식회사 질화물 반도체 발광소자
EP2355184A3 (fr) * 2010-02-04 2015-01-14 LG Innotek Co., Ltd. Dispositif électroluminescent, emballage de dispositif électroluminescent et système d'éclairage

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5491191A (en) * 1992-04-06 1996-02-13 E. I. Du Pont De Nemours And Company Stable chlorosulfonated resin latex
JPH08316526A (ja) * 1995-05-12 1996-11-29 Hitachi Cable Ltd 発光ダイオード及びその製造方法
JPH11103090A (ja) * 1997-09-29 1999-04-13 Hitachi Cable Ltd 発光ダイオード
US6562644B2 (en) * 2000-08-08 2003-05-13 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method
US6870191B2 (en) * 2001-07-24 2005-03-22 Nichia Corporation Semiconductor light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5491191A (en) * 1992-04-06 1996-02-13 E. I. Du Pont De Nemours And Company Stable chlorosulfonated resin latex
JPH08316526A (ja) * 1995-05-12 1996-11-29 Hitachi Cable Ltd 発光ダイオード及びその製造方法
JPH11103090A (ja) * 1997-09-29 1999-04-13 Hitachi Cable Ltd 発光ダイオード
US6562644B2 (en) * 2000-08-08 2003-05-13 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method
US6870191B2 (en) * 2001-07-24 2005-03-22 Nichia Corporation Semiconductor light emitting device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101338698B1 (ko) 2007-04-16 2013-12-06 엘지이노텍 주식회사 질화물 반도체 발광소자
EP2226857A1 (fr) * 2009-03-02 2010-09-08 LG Innotek Co., Ltd. Dispositif électroluminescent semi-conducteur et système d'éclairage l'incluant
US8410521B2 (en) 2009-03-02 2013-04-02 Lg Innotek Co., Ltd. Semiconductor light emitting device
CN101901861A (zh) * 2009-05-29 2010-12-01 索尼公司 发光二极管及其制造方法
EP2287924A3 (fr) * 2009-08-17 2012-12-19 Samsung Electronics Co., Ltd. Structures de substrat et procédés de fabrication
US8716749B2 (en) 2009-08-17 2014-05-06 Samsung Electronics Co., Ltd. Substrate structures and methods of manufacturing the same
EP2333848A1 (fr) * 2009-12-10 2011-06-15 LG Innotek Co., Ltd. Dispositif électroluminescent et conditionnement de dispositif électroluminescent
US8441027B2 (en) 2009-12-10 2013-05-14 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
EP2355184A3 (fr) * 2010-02-04 2015-01-14 LG Innotek Co., Ltd. Dispositif électroluminescent, emballage de dispositif électroluminescent et système d'éclairage
CN101807646A (zh) * 2010-03-22 2010-08-18 徐瑾 用空气形成图形衬底的高效率发光二极管及其制备方法
CN102544287A (zh) * 2010-12-10 2012-07-04 晶元光电股份有限公司 光电元件及其制造方法
EP2551922A3 (fr) * 2011-07-27 2013-11-06 Lextar Electronics Corp. Structure de diode électroluminescente et son procédé de fabrication

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