CN105445854B - 硅衬底悬空led光波导集成光子器件及其制备方法 - Google Patents

硅衬底悬空led光波导集成光子器件及其制备方法 Download PDF

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CN105445854B
CN105445854B CN201510752581.9A CN201510752581A CN105445854B CN 105445854 B CN105445854 B CN 105445854B CN 201510752581 A CN201510752581 A CN 201510752581A CN 105445854 B CN105445854 B CN 105445854B
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CN105445854A (zh
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王永进
朱桂遐
白丹
许银
朱洪波
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Nanjing Post and Telecommunication University
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Abstract

本发明提供一种硅衬底悬空LED光波导集成光子器件及其制备方法,该器件利用各向异性硅刻蚀技术,剥离去除器件结构下硅衬底层和外延缓冲层,得到悬空氮化物薄膜LED光波导集成光子器件,进一步采用氮化物背后减薄刻蚀技术,获得超薄的硅衬底悬空LED光波导集成光子器件,降低LED器件的内部损耗,提高出光效率。本发明器件将光源和光波导集成在同一片晶圆上,解决了平面光子单片集成的难题,同时可使LED发出的光沿着光波导传输,解决光在光波导内传输的难题,实现光在平面传输的功能。

Description

硅衬底悬空LED光波导集成光子器件及其制备方法
技术领域
本发明属于信息材料与器件领域,涉及一种硅衬底悬空LED光波导集成光子器件及其制备技术。
背景技术
从材料角度来看,氮化物材料特别是GaN材料,具有较高的折射率(~2.5),在可见光、近红外波段透明,是一种优异的光学材料。然而,由于SiC和蓝宝石衬底不易加工,而氮化物特别是GaN的加工技术也不成熟,限制了氮化物光子及光学微机电器件的发展。近年来,通过引入AlN/AlGaN或其它独有的缓冲层来弥补晶格失配以及热膨胀不一致引起的残余应力,基于硅衬底的高质量氮化物材料日益成熟,已经逐步走向市场。美国的Nitronex、日本的Sanken等公司已经推出了商用的基于硅衬底氮化物材料。许多学术研究机构孵化出的高科技材料企业也将其特有的材料生长技术向企业界转化,可以根据用户的需求提供4-inch甚至更大尺寸的基于硅衬底的氮化物材料。同时,氮化物材料加工技术的不断突破,这一材料体系可以和目前成熟的硅加工技术结合起来,大规模、低成本制备新颖的氮化物光电器件。基于硅衬底的氮化物材料,利用成熟的硅刻蚀加工技术,可以进行硅衬底剥离,从而可以制备出悬空的氮化物薄膜器件,为发展面向光通信、光传感的氮化物光子及光学微机电器件奠定了基础。
发明内容
技术问题:本发明提供一种有超薄氮化物薄膜,实现了平面光子单片集成和光在平面光波导内传输,提高了LED内部光源利用效率的硅衬底悬空LED光波导集成光子器件,同时提供一种该器件的制备方法。
技术方案:本发明的硅衬底悬空LED光波导集成光子器件,以硅基氮化物晶片为载体,包括硅衬底层,设置在硅衬底层上的外延缓冲层,设置在外延缓冲层上的P-N结,所述P-N结包括从下至上依次连接设置的n-GaN层、InGaN/GaN量子阱和p-GaN层,所述p-GaN层上设置有p-电极,在所述n-GaN层上表面有刻蚀出的阶梯状台面,所述阶梯状台面包括一个上台面和位于上台面一侧的下台面,所述上台面与InGaN/GaN量子阱的底面连接,所述下台面上设置有n-电极,所述n-GaN层、InGaN/GaN量子阱、p-GaN层、p-电极和n-电极构成LED器件,所述LED器件上集成有光波导,在所述n-GaN层下方设置有与p-电极、n-电极和光波导的位置正对且贯穿硅衬底层、外延缓冲层的空腔,使得LED器件和光波导悬空。
进一步的,本发明的硅衬底悬空LED光波导集成光子器件中,所述p-电极由依次连接的p-电极发光区、p-电极导电区和p-电极引线区组成;所述n-电极由相互连接的n-电极导电区和n-电极引线区组成,所述空腔处于p-电极发光区、p-电极导电区、n-电极导电区和光波导的正下方。
进一步的,本发明的硅衬底悬空LED光波导集成光子器件中,所述LED器件和光波导均在硅基氮化物晶片的氮化物层上实现,光波导与n-GaN层、InGaN/GaN量子阱、p-GaN层均连接。
进一步的,本发明的硅衬底悬空LED光波导集成光子器件中,所述LED器件上集成多个光波导。
进一步的,本发明的硅衬底悬空LED光波导集成光子器件中,所述LED器件的p-电极和n-电极均为Ni/Au电极,即沉积的金属材料为Ni/Au。
本发明的制备上述硅衬底悬空LED光波导集成光子器件的方法,包括以下步骤:
步骤(1)在硅基氮化物晶片背后对硅衬底层进行抛光减薄;
步骤(2)在硅基氮化物晶片上表面均匀涂上一层光刻胶,采用曝光技术在光刻胶层上定义出光波导区域和n-GaN台阶区域;
步骤(3)采用反应离子束刻蚀n-GaN台阶区域和光波导区域;
步骤(4)去除残余光刻胶,得到阶梯状台面、p-GaN层、InGaN/GaN量子阱和光波导;
步骤(5)在硅基氮化物晶片上表面均匀涂上一层光刻胶,光刻定义p-电极窗口区域与n-电极窗口区域,然后在所述p-电极窗口区域与n-电极窗口区域分别蒸镀Ni/Au,形成欧姆接触,实现p-电极与n-电极,去除残余光刻胶后,即得到LED器件;
步骤(6)在硅基氮化物晶片顶层涂胶保护,防止刻蚀过程中损伤表面器件,在硅基氮化物晶片的硅衬底层下表面旋涂一层光刻胶层,利用背后对准技术,定义出一个对准并完全覆盖p-电极区域中的导电区和发光区、n-电极区域中的导电区和光波导区的背后刻蚀窗口;
步骤(7)将外延缓冲层作为刻蚀阻挡层,利用背后深硅刻蚀技术,通过背后刻蚀窗口将所述硅衬底层贯穿刻蚀至外延缓冲层的下表面,形成一个空腔;
步骤(8)采用氮化物背后减薄刻蚀技术,从下往上对外延缓冲层和n-GaN层进行氮化物减薄处理;
步骤(9)去除残余光刻胶,即获得硅衬底悬空LED光波导集成光子器件。
进一步的,本发明制备方法中,所述步骤(5)中的蒸镀Ni/Au,采用剥离工艺和温度控制在500±5℃的氮气退火技术实现。
进一步的,本发明制备方法中,所述步骤(8)中,所述氮化物背后减薄刻蚀技术为离子束轰击或反应离子束刻蚀技术。
本发明通过曝光技术和氮化物刻蚀工艺,将LED和光波导器件结构转移到顶层氮化物器件层。利用各向异性硅刻蚀技术,剥离去除器件结构下硅衬底层和外延缓冲层,进一步采用氮化物背后减薄刻蚀技术,获得超薄的硅衬底悬空LED光波导集成光子器件。
有益效果:本发明与现有技术相比,具有以下优点:
本发明的硅衬底悬空LED光波导集成光子器件,相较于其他不同材质的分离的LED和波导器件的集成,将波导与LED器件均采用同一氮化物材质,使两者可集成在同一片晶圆上,简化了制作工艺,降低了难度,解决了平面光子单片集成的难题。
本发明的光子器件,由于将LED器件和波导器件集成在同一片晶圆上,使LED发出的光沿着光波导传输,提高了LED内部光源的利用效率,实现光在平面光波导内传输的功能。
本发明提出的硅衬底悬空LED光波导集成光子器件,其制备技术可以与硅加工技术兼容,可实现面向可见光波段光通信、光传感的平面光子集成器件。
本发明的硅衬底悬空LED光波导集成光子器件制备方法,通过曝光技术和氮化物刻蚀工艺,将LED器件、光波导器件结构转移到顶层氮化物器件层,利用各向异性硅刻蚀技术,剥离去除器件结构下硅衬底层,形成悬空LED光波导集成光子器件,实现了平面光子单片集成,降低LED器件的内部损耗,提高了出光效率。
附图说明
图1是本发明硅衬底悬空LED光波导集成光子器件结构示意图。
图2是本发明硅衬底悬空LED光波导集成光子器件的正面俯视图。
图3是本发明硅衬底悬空LED光波导集成光子器件的制造流程图。
图中有:1-硅衬底层:;2-外延缓冲层;3-n-GaN;4-InGaN/GaN量子阱;5-p-GaN层;6-p-电极;7-n-电极;8-光波导;9-p-电极发光区;10-p-电极导电区;11-p-电极引线区;12-n-电极导电区;13-n-电极引线区。
具体实施方式
下面结合实施例和说明书附图对本发明作进一步的说明。
图1、图2给出了本发明的硅衬底悬空LED光波导集成光子器件的结构示意图,该光子器件以硅基氮化物晶片为载体,包括硅衬底层1,设置在硅衬底层上的外延缓冲层2,设置在外延缓冲层上的P-N结,所述P-N结包括从下至上依次连接设置n-GaN层3、InGaN/GaN量子阱4和p-GaN层5,所述p-GaN层5上设置有p-电极6,在所述n-GaN层3上表面有刻蚀出的阶梯状台面,所述阶梯状台面包括一个上台面和位于上台面一侧的下台面,所述上台面与InGaN/GaN量子阱4的底面连接,所述下台面上设置有n-电极7,所述n-GaN层3、InGaN/GaN量子阱4、p-GaN层5、p-电极6和n-电极7构成LED器件,所述LED器件上集成光波导8,在所述n-GaN层3下方设置有与p-电极6、n-电极7和光波导8的位置正对且贯穿硅衬底层1、外延缓冲层2的空腔,使得LED器件和光波导悬空。其中p-电极6由依次连接的p-电极发光区9、p-电极导电区10和p-电极引线区11组成;所述n-电极7由相互连接的n-电极导电区12和n-电极引线区13组成,所述空腔处于p-电极发光区9、p-电极导电区10、n-电极导电区12和光波导8的正下方。
本发明的硅衬底悬空LED光波导集成光子器件,所述的InGaN/GaN量子阱4中,铟氮化镓InGaN与氮化镓GaN间隔沉积形成量子阱层。
本发明的硅衬底悬空LED光波导集成光子器件,所述LED器件和光波导8均在硅基氮化物晶片的氮化物层上实现,光波导8与n-GaN层3、InGaN/GaN量子阱4、p-GaN层5均连接。
本发明硅衬底悬空LED光波导集成光子器件的一种优选实施例中,在LED器件上集成多个光波导8。
本发明的另一个优选实施例中,LED器件的p-电极和n-电极均为Ni/Au电极,即沉积的金属材料为镍-金合金Ni/Au。
本发明的制备上述硅衬底悬空LED光波导集成光子器件的方法,具体步骤如下:
1)在硅基氮化物晶片背后对硅衬底层1进行抛光减薄;
2)在硅基氮化物晶片上表面均匀涂上一层光刻胶,采用曝光技术在光刻胶层上定义出光波导区域和n-GaN台阶区域;
3)采用反应离子束刻蚀n-GaN台阶区域和光波导区域;
4)去除残余光刻胶,得到阶梯状台面、p-GaN层5、InGaN/GaN量子阱4和光波导8;
5)在硅基氮化物晶片上表面均匀涂上一层光刻胶,光刻定义p-电极窗口区域与n-电极窗口区域,然后在所述p-电极窗口区域与n-电极窗口区域分别蒸镀Ni/Au,形成欧姆接触,实现p-电极6与n-电极7,去除残余光刻胶后,即得到LED器件;
6)在硅基氮化物晶片顶层涂胶保护,防止刻蚀过程中损伤表面器件,在硅基氮化物晶片的硅衬底层1下表面旋涂一层光刻胶层,利用背后对准技术,定义出一个对准并完全覆盖p-电极区域中的导电区和发光区、n-电极区域中的导电区和光波导区的背后刻蚀窗口;
7)将外延缓冲层2作为刻蚀阻挡层,利用背后深硅刻蚀技术,通过背后刻蚀窗口将所述硅衬底层1贯穿刻蚀至外延缓冲层2的下表面,形成一个空腔;
8)采用氮化物背后减薄刻蚀技术,从下往上对外延缓冲层2和n-GaN3层进行氮化物减薄处理;
9)去除残余光刻胶,即获得硅衬底悬空LED光波导集成光子器件。
上述实施例仅是本发明的优选实施方式,应当指出:对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和等同替换,这些对本发明权利要求进行改进和等同替换后的技术方案,均落入本发明的保护范围。

Claims (8)

1.一种硅衬底悬空LED光波导集成光子器件,其特征在于,该光子器件以硅基氮化物晶片为载体,包括硅衬底层(1),设置在所述硅衬底层(1)上的外延缓冲层(2),设置在所述外延缓冲层(2)上的P-N结,所述P-N结包括从下至上依次连接设置的n-GaN层(3)、InGaN/GaN量子阱(4)和p-GaN层(5),所述p-GaN层(5)上设置有p-电极(6),在所述n-GaN层(3)上表面有刻蚀出的阶梯状台面,所述阶梯状台面包括一个上台面和位于上台面一侧的下台面,所述上台面与InGaN/GaN量子阱(4)的底面连接,所述下台面上设置有n-电极(7),所述n-GaN层(3)、InGaN/GaN量子阱(4)、p-GaN层(5)、p-电极(6)和n-电极(7)构成LED器件,所述LED器件上集成有光波导(8),在所述n-GaN层(3)下方设置有与p-电极(6)、n-电极(7)和光波导(8)的位置正对且贯穿硅衬底层(1)、外延缓冲层(2)的空腔,使得LED器件和光波导(8)悬空。
2.根据权利要求1所述的硅衬底悬空LED光波导集成光子器件,其特征在于,所述p-电极(6)由依次连接的p-电极发光区(9)、p-电极导电区(10)和p-电极引线区(11)组成;所述n-电极(7)由相互连接的n-电极导电区(12)和n-电极引线区(13)组成,所述空腔处于p-电极发光区(9)、p-电极导电区(10)、n-电极导电区(12)和光波导(8)的正下方。
3.根据权利要求1所述的硅衬底悬空LED光波导集成光子器件,其特征在于,所述LED器件和光波导(8)均在硅基氮化物晶片的氮化物层上实现,光波导(8)与n-GaN层(3)、InGaN/GaN量子阱(4)、p-GaN层(5)均连接。
4.根据权利要求3所述的硅衬底悬空LED光波导集成光子器件,其特征在于,所述LED器件上集成多个光波导(8)。
5.根据权利要求1、2、3或4所述的硅衬底悬空LED光波导集成光子器件,其特征在于,所述p-电极(6)和n-电极(7)均为Ni/Au电极,即沉积的金属材料为Ni/Au。
6.一种制备权利要求1、2、3、4或5所述硅衬底悬空LED光波导集成光子器件的方法,其特征在于,该方法包括以下步骤:
步骤(1)在硅基氮化物晶片背后对硅衬底层(1)进行抛光减薄;
步骤(2)在硅基氮化物晶片上表面均匀涂上一层光刻胶,采用曝光技术在光刻胶层上定义出光波导区域和n-GaN台阶区域;
步骤(3)采用反应离子束刻蚀n-GaN台阶区域和光波导区域;
步骤(4)去除残余光刻胶,得到阶梯状台面、p-GaN层(5)、InGaN/GaN量子阱(4)和光波导(8);
步骤(5)在硅基氮化物晶片上表面均匀涂上一层光刻胶,光刻定义p-电极窗口区域与n-电极窗口区域,然后在所述p-电极窗口区域与n-电极窗口区域分别蒸镀Ni/Au,形成欧姆接触,实现p-电极(6)与n-电极(7),去除残余光刻胶后,即得到LED器件;
步骤(6)在硅基氮化物晶片顶层涂胶保护,防止刻蚀过程中损伤表面器件,在硅基氮化物晶片的硅衬底层(1)下表面旋涂一层光刻胶层,利用背后对准技术,定义出一个对准并完全覆盖p-电极区域中的导电区和发光区、n-电极区域中的导电区和光波导区的背后刻蚀窗口;
步骤(7)将外延缓冲层(2)作为刻蚀阻挡层,利用背后深硅刻蚀技术,通过背后刻蚀窗口将所述硅衬底层(1)贯穿刻蚀至外延缓冲层(2)的下表面,形成一个空腔;
步骤(8)采用氮化物背后减薄刻蚀技术,从下往上对外延缓冲层(2)和n-GaN层(3)进行氮化物减薄处理;
步骤(9)去除残余光刻胶,即获得硅衬底悬空LED光波导集成光子器件。
7.根据权利要求6所述的制备硅衬底悬空LED光波导集成光子器件的方法,其特征在于,所述步骤(5)中的蒸镀Ni/Au,采用剥离工艺和温度控制在500±5℃的氮气退火技术实现。
8.根据权利要求6所述的制备硅衬底悬空LED光波导集成光子器件的方法,其特征在于,所述步骤(8)中,所述氮化物背后减薄刻蚀技术为离子束轰击或反应离子束刻蚀技术。
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