EP2261987A3 - Terminaison en anneau de garde pour les dispositifs en carbure de silicium - Google Patents

Terminaison en anneau de garde pour les dispositifs en carbure de silicium Download PDF

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Publication number
EP2261987A3
EP2261987A3 EP10179609.2A EP10179609A EP2261987A3 EP 2261987 A3 EP2261987 A3 EP 2261987A3 EP 10179609 A EP10179609 A EP 10179609A EP 2261987 A3 EP2261987 A3 EP 2261987A3
Authority
EP
European Patent Office
Prior art keywords
silicon carbide
guard ring
carbide devices
ring termination
guard rings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP10179609.2A
Other languages
German (de)
English (en)
Other versions
EP2261987A2 (fr
EP2261987B1 (fr
Inventor
Sei-Hyung Ryu
Anant K. Agarwal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of EP2261987A2 publication Critical patent/EP2261987A2/fr
Publication of EP2261987A3 publication Critical patent/EP2261987A3/fr
Application granted granted Critical
Publication of EP2261987B1 publication Critical patent/EP2261987B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
EP10179609.2A 2003-01-15 2004-01-07 Terminaison en anneau de garde pour les dispositifs en carbure de silicium Expired - Lifetime EP2261987B1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US44019303P 2003-01-15 2003-01-15
US10/731,860 US7026650B2 (en) 2003-01-15 2003-12-09 Multiple floating guard ring edge termination for silicon carbide devices
EP04700653.1A EP1584110B1 (fr) 2003-01-15 2004-01-07 Terminaison laterale d'anneaux pour dispositifs en carbure de silicium
PCT/US2004/001183 WO2004066392A1 (fr) 2003-01-15 2004-01-07 Terminaison laterale d'anneaux pour dispositifs en carbure de silicium

Related Parent Applications (3)

Application Number Title Priority Date Filing Date
EP04700653.1 Division 2004-01-07
EP04700653.1A Division EP1584110B1 (fr) 2003-01-15 2004-01-07 Terminaison laterale d'anneaux pour dispositifs en carbure de silicium
EP04700653.1A Division-Into EP1584110B1 (fr) 2003-01-15 2004-01-07 Terminaison laterale d'anneaux pour dispositifs en carbure de silicium

Publications (3)

Publication Number Publication Date
EP2261987A2 EP2261987A2 (fr) 2010-12-15
EP2261987A3 true EP2261987A3 (fr) 2014-01-15
EP2261987B1 EP2261987B1 (fr) 2019-09-18

Family

ID=32718154

Family Applications (2)

Application Number Title Priority Date Filing Date
EP04700653.1A Expired - Lifetime EP1584110B1 (fr) 2003-01-15 2004-01-07 Terminaison laterale d'anneaux pour dispositifs en carbure de silicium
EP10179609.2A Expired - Lifetime EP2261987B1 (fr) 2003-01-15 2004-01-07 Terminaison en anneau de garde pour les dispositifs en carbure de silicium

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP04700653.1A Expired - Lifetime EP1584110B1 (fr) 2003-01-15 2004-01-07 Terminaison laterale d'anneaux pour dispositifs en carbure de silicium

Country Status (7)

Country Link
US (4) US7026650B2 (fr)
EP (2) EP1584110B1 (fr)
JP (3) JP5122810B2 (fr)
KR (1) KR101036380B1 (fr)
CA (1) CA2512580A1 (fr)
TW (1) TWI336522B (fr)
WO (1) WO2004066392A1 (fr)

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US9515135B2 (en) * 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US7026650B2 (en) 2003-01-15 2006-04-11 Cree, Inc. Multiple floating guard ring edge termination for silicon carbide devices
EP1619715A4 (fr) * 2003-04-25 2009-01-07 Sumitomo Electric Industries Procede de production d'un dispositif a semi-conducteur
US8901699B2 (en) * 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
DE112006002377B4 (de) * 2005-09-08 2014-04-24 Mitsubishi Denki K.K. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
EP2631951B1 (fr) 2006-08-17 2017-10-11 Cree, Inc. Transistors bipolaires haute puissance à grille isolée
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US8866150B2 (en) * 2007-05-31 2014-10-21 Cree, Inc. Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts
US7687825B2 (en) * 2007-09-18 2010-03-30 Cree, Inc. Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication
US8110888B2 (en) * 2007-09-18 2012-02-07 Microsemi Corporation Edge termination for high voltage semiconductor device
US9640609B2 (en) * 2008-02-26 2017-05-02 Cree, Inc. Double guard ring edge termination for silicon carbide devices
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8097919B2 (en) * 2008-08-11 2012-01-17 Cree, Inc. Mesa termination structures for power semiconductor devices including mesa step buffers
US7759186B2 (en) * 2008-09-03 2010-07-20 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices
US7825487B2 (en) * 2008-09-30 2010-11-02 Northrop Grumman Systems Corporation Guard ring structures and method of fabricating thereof
US8105911B2 (en) * 2008-09-30 2012-01-31 Northrop Grumman Systems Corporation Bipolar junction transistor guard ring structures and method of fabricating thereof
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8637386B2 (en) * 2009-05-12 2014-01-28 Cree, Inc. Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
US8629509B2 (en) * 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
WO2011141981A1 (fr) 2010-05-10 2011-11-17 株式会社日立製作所 Dispositif à semi-conducteur
US8803277B2 (en) * 2011-02-10 2014-08-12 Cree, Inc. Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
CN103155152B (zh) * 2011-03-28 2015-07-01 丰田自动车株式会社 纵型半导体装置
US9318623B2 (en) * 2011-04-05 2016-04-19 Cree, Inc. Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
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US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
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US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
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US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
JP2014531752A (ja) 2011-09-11 2014-11-27 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 改善したレイアウトを有するトランジスタを備える高電流密度電力モジュール
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US9536942B2 (en) * 2012-03-15 2017-01-03 Mitsubishi Electric Corporation Semiconductor device having a plurality of electric field relaxation layers and method for manufacturing same
BR112014028253A2 (pt) * 2012-05-17 2017-06-27 Gen Electric dispositivo semicondutor
US8901639B2 (en) 2012-07-26 2014-12-02 Cree, Inc. Monolithic bidirectional silicon carbide switching devices
US9006748B2 (en) 2012-12-03 2015-04-14 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and method for manufacturing same
JP6242633B2 (ja) 2013-09-03 2017-12-06 株式会社東芝 半導体装置
JP6236456B2 (ja) 2013-09-09 2017-11-22 株式会社日立製作所 半導体装置およびその製造方法
WO2015040675A1 (fr) * 2013-09-17 2015-03-26 株式会社日立製作所 Dispositif semi-conducteur, dispositif de conversion de puissance, véhicule sur rail, et procédé de fabrication de dispositif semi-conducteur
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JP2006516815A (ja) 2006-07-06
JP5695996B2 (ja) 2015-04-08
WO2004066392A1 (fr) 2004-08-05
US20110081772A1 (en) 2011-04-07
TW200505018A (en) 2005-02-01
EP2261987A2 (fr) 2010-12-15
US20040135153A1 (en) 2004-07-15
EP2261987B1 (fr) 2019-09-18
US20060054895A1 (en) 2006-03-16
EP1584110A1 (fr) 2005-10-12
JP2011243999A (ja) 2011-12-01
JP2012084910A (ja) 2012-04-26
TWI336522B (en) 2011-01-21
US7026650B2 (en) 2006-04-11
CA2512580A1 (fr) 2004-08-05
JP5670308B2 (ja) 2015-02-18
EP1584110B1 (fr) 2018-02-21
JP5122810B2 (ja) 2013-01-16
KR20050109924A (ko) 2005-11-22
US7419877B2 (en) 2008-09-02
US20090035926A1 (en) 2009-02-05
US7842549B2 (en) 2010-11-30
US8124480B2 (en) 2012-02-28
KR101036380B1 (ko) 2011-05-23

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