EP1341238A3 - Dispositif de diode et dispositif de transistor - Google Patents

Dispositif de diode et dispositif de transistor Download PDF

Info

Publication number
EP1341238A3
EP1341238A3 EP03003831A EP03003831A EP1341238A3 EP 1341238 A3 EP1341238 A3 EP 1341238A3 EP 03003831 A EP03003831 A EP 03003831A EP 03003831 A EP03003831 A EP 03003831A EP 1341238 A3 EP1341238 A3 EP 1341238A3
Authority
EP
European Patent Office
Prior art keywords
guard ring
ring portions
diffusion layers
relay diffusion
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03003831A
Other languages
German (de)
English (en)
Other versions
EP1341238A2 (fr
EP1341238B1 (fr
Inventor
Mizue c/o SHINDENGEN ELEC. MAN. CO. LTD. Kitada
Kosuke c/o SHINDENGEN ELEC. MAN. CO. LTD Ohshima
Shinji c/o SHINDENGEN ELEC. MAN. CO. LTD. Kunori
Toru c/o SHINDENGEN ELEC. MAN. CO. LTD. Kurosaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002042535A external-priority patent/JP3914785B2/ja
Priority claimed from JP2002055242A external-priority patent/JP3860765B2/ja
Priority claimed from JP2002288317A external-priority patent/JP3914852B2/ja
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to EP10178736.4A priority Critical patent/EP2259325B1/fr
Publication of EP1341238A2 publication Critical patent/EP1341238A2/fr
Publication of EP1341238A3 publication Critical patent/EP1341238A3/fr
Application granted granted Critical
Publication of EP1341238B1 publication Critical patent/EP1341238B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
EP03003831A 2002-02-20 2003-02-20 Dispositif de diode et dispositif de transistor Expired - Lifetime EP1341238B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10178736.4A EP2259325B1 (fr) 2002-02-20 2003-02-20 Dispositif de transistor

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2002042535 2002-02-20
JP2002042535A JP3914785B2 (ja) 2002-02-20 2002-02-20 ダイオード素子
JP2002055242A JP3860765B2 (ja) 2002-03-01 2002-03-01 ダイオード素子
JP2002055242 2002-03-01
JP2002105915 2002-04-09
JP2002105915 2002-04-09
JP2002288317A JP3914852B2 (ja) 2002-04-09 2002-10-01 ダイオード素子とトランジスタ素子
JP2002288317 2002-10-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP10178736.4A Division-Into EP2259325B1 (fr) 2002-02-20 2003-02-20 Dispositif de transistor

Publications (3)

Publication Number Publication Date
EP1341238A2 EP1341238A2 (fr) 2003-09-03
EP1341238A3 true EP1341238A3 (fr) 2004-09-15
EP1341238B1 EP1341238B1 (fr) 2012-09-05

Family

ID=27739284

Family Applications (2)

Application Number Title Priority Date Filing Date
EP10178736.4A Expired - Lifetime EP2259325B1 (fr) 2002-02-20 2003-02-20 Dispositif de transistor
EP03003831A Expired - Lifetime EP1341238B1 (fr) 2002-02-20 2003-02-20 Dispositif de diode et dispositif de transistor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP10178736.4A Expired - Lifetime EP2259325B1 (fr) 2002-02-20 2003-02-20 Dispositif de transistor

Country Status (2)

Country Link
US (1) US7135718B2 (fr)
EP (2) EP2259325B1 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4274771B2 (ja) * 2002-10-04 2009-06-10 新電元工業株式会社 半導体装置
US6841825B2 (en) 2002-06-05 2005-01-11 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP3971670B2 (ja) 2002-06-28 2007-09-05 新電元工業株式会社 半導体装置
JP3779243B2 (ja) * 2002-07-31 2006-05-24 富士通株式会社 半導体装置及びその製造方法
JP4519411B2 (ja) * 2003-04-01 2010-08-04 ルネサスエレクトロニクス株式会社 半導体装置
WO2005020275A2 (fr) * 2003-08-20 2005-03-03 Denso Corporation Dispositif a semi-conducteur vertical
US6966101B2 (en) * 2003-09-23 2005-11-22 Door & Window Hardware Co. Handle of a glass door
JP4253558B2 (ja) * 2003-10-10 2009-04-15 株式会社豊田中央研究所 半導体装置
JP4757449B2 (ja) * 2004-01-29 2011-08-24 三菱電機株式会社 半導体装置
JP4773716B2 (ja) * 2004-03-31 2011-09-14 株式会社デンソー 半導体基板の製造方法
US7238976B1 (en) * 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
JP4940546B2 (ja) * 2004-12-13 2012-05-30 株式会社デンソー 半導体装置
JP5351519B2 (ja) * 2005-12-27 2013-11-27 パワー・インテグレーションズ・インコーポレーテッド 高速回復整流器構造体の装置および方法
US8736039B2 (en) 2006-10-06 2014-05-27 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked structures and methods of forming stacked structures
US8476732B2 (en) * 2008-12-10 2013-07-02 Toyota Jidosha Kabushiki Kaisha Semiconductor device
JP2014236171A (ja) 2013-06-05 2014-12-15 ローム株式会社 半導体装置およびその製造方法
JP2015032627A (ja) * 2013-07-31 2015-02-16 株式会社東芝 半導体装置
US9419148B2 (en) 2014-03-28 2016-08-16 Stmicroelectronics S.R.L. Diode with insulated anode regions
CN104009099B (zh) * 2014-05-13 2018-01-09 株洲南车时代电气股份有限公司 结势垒肖特基二极管及其制造方法
US10770599B2 (en) * 2016-09-03 2020-09-08 Champion Microelectronic Corp. Deep trench MOS barrier junction all around rectifier and MOSFET
CN115172358B (zh) * 2022-04-20 2022-12-02 深圳长晶微电子有限公司 超低压低容单向保护器及其制作方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124139A2 (fr) * 1983-01-28 1984-11-07 Philips Electronics Uk Limited Dispositif semi-conducteur ayant une tension de rupture agrandie
EP0631320A1 (fr) * 1993-06-28 1994-12-28 Motorola, Inc. Structure semi-conductrice à haute tension
US5525821A (en) * 1992-07-21 1996-06-11 Mitsubishi Denki Kabushiki Kaisha PN junction trench isolation type semiconductor device
DE19820734A1 (de) * 1998-05-11 1999-11-18 Dieter Silber Unipolarer Halbleitergleichrichter
EP1063705A2 (fr) * 1999-06-24 2000-12-27 Shindengen Electric Manufacturing Company, Limited Transistor à effet de champ ayant une haute capacité de résistance au claquage
US6184545B1 (en) * 1997-09-12 2001-02-06 Infineon Technologies Ag Semiconductor component with metal-semiconductor junction with low reverse current
EP1076363A2 (fr) * 1999-08-11 2001-02-14 Dynex Semiconductor Limited Dispositif semi-conducteur à haute tension
US6340836B1 (en) * 1999-04-26 2002-01-22 Rohm Co., Ltd. Semiconductor device for rectifying

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294558B (de) * 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3541403A (en) * 1967-10-19 1970-11-17 Bell Telephone Labor Inc Guard ring for schottky barrier devices
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
JPS598375A (ja) * 1982-07-05 1984-01-17 Matsushita Electronics Corp 縦型構造電界効果トランジスタ
JPH0618276B2 (ja) * 1988-11-11 1994-03-09 サンケン電気株式会社 半導体装置
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード
JPH0750791B2 (ja) * 1989-09-20 1995-05-31 株式会社日立製作所 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機
US5075739A (en) * 1990-01-02 1991-12-24 Motorola, Inc. High voltage planar edge termination using a punch-through retarding implant and floating field plates
CN1019720B (zh) * 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
US5608244A (en) * 1992-04-28 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
US5241195A (en) * 1992-08-13 1993-08-31 North Carolina State University At Raleigh Merged P-I-N/Schottky power rectifier having extended P-I-N junction
DE4309764C2 (de) * 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
US5962893A (en) * 1995-04-20 1999-10-05 Kabushiki Kaisha Toshiba Schottky tunneling device
US5763915A (en) * 1996-02-27 1998-06-09 Magemos Corporation DMOS transistors having trenched gate oxide
US6236099B1 (en) * 1996-04-22 2001-05-22 International Rectifier Corp. Trench MOS device and process for radhard device
JP3356644B2 (ja) * 1997-03-17 2002-12-16 株式会社東芝 半導体整流装置の駆動方法
JP3616258B2 (ja) 1998-08-28 2005-02-02 株式会社ルネサステクノロジ ショットキーダイオードおよびそれを用いた電力変換器
US6084264A (en) * 1998-11-25 2000-07-04 Siliconix Incorporated Trench MOSFET having improved breakdown and on-resistance characteristics
GB2347014B (en) * 1999-02-18 2003-04-16 Zetex Plc Semiconductor device
US6204097B1 (en) * 1999-03-01 2001-03-20 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
GB9919764D0 (en) * 1999-08-21 1999-10-27 Koninkl Philips Electronics Nv Thyristors and their manufacture
JP4774580B2 (ja) * 1999-08-23 2011-09-14 富士電機株式会社 超接合半導体素子
JP4363736B2 (ja) * 2000-03-01 2009-11-11 新電元工業株式会社 トランジスタ及びその製造方法
JP3860705B2 (ja) 2000-03-31 2006-12-20 新電元工業株式会社 半導体装置
JP4357753B2 (ja) * 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
JP2002373989A (ja) * 2001-06-13 2002-12-26 Toshiba Corp 半導体装置
JP4865166B2 (ja) * 2001-08-30 2012-02-01 新電元工業株式会社 トランジスタの製造方法、ダイオードの製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124139A2 (fr) * 1983-01-28 1984-11-07 Philips Electronics Uk Limited Dispositif semi-conducteur ayant une tension de rupture agrandie
US5525821A (en) * 1992-07-21 1996-06-11 Mitsubishi Denki Kabushiki Kaisha PN junction trench isolation type semiconductor device
EP0631320A1 (fr) * 1993-06-28 1994-12-28 Motorola, Inc. Structure semi-conductrice à haute tension
US6184545B1 (en) * 1997-09-12 2001-02-06 Infineon Technologies Ag Semiconductor component with metal-semiconductor junction with low reverse current
DE19820734A1 (de) * 1998-05-11 1999-11-18 Dieter Silber Unipolarer Halbleitergleichrichter
US6340836B1 (en) * 1999-04-26 2002-01-22 Rohm Co., Ltd. Semiconductor device for rectifying
EP1063705A2 (fr) * 1999-06-24 2000-12-27 Shindengen Electric Manufacturing Company, Limited Transistor à effet de champ ayant une haute capacité de résistance au claquage
EP1076363A2 (fr) * 1999-08-11 2001-02-14 Dynex Semiconductor Limited Dispositif semi-conducteur à haute tension

Also Published As

Publication number Publication date
US20030160262A1 (en) 2003-08-28
EP1341238A2 (fr) 2003-09-03
EP2259325A1 (fr) 2010-12-08
US7135718B2 (en) 2006-11-14
EP2259325B1 (fr) 2013-12-25
EP1341238B1 (fr) 2012-09-05

Similar Documents

Publication Publication Date Title
EP1341238A3 (fr) Dispositif de diode et dispositif de transistor
EP2261987A3 (fr) Terminaison en anneau de garde pour les dispositifs en carbure de silicium
TWI266405B (en) Bi-directional ESD protection devices
TW200514239A (en) LDMOS device with isolation guard rings
EP1708274B1 (fr) Transistor bipolaire latéral avec implantation ESD additionnelle
EP1233456A3 (fr) Dispositifs semi-conducteurs à haute tension et à grand gain et méthodes pour leur fabrication
WO2003073471A3 (fr) Dispositifs electriques en carbure de silicium munis d'anneaux de garde en saillie
US7960222B1 (en) System and method for manufacturing double EPI N-type lateral diffusion metal oxide semiconductor transistors
EP1670106A4 (fr) Dispositif semi-conducteur en nitrure et procede de fabrication de celui-ci
WO2006066265A3 (fr) Transistors pmos a extension de drain et leurs procedes de fabrication
EP1655784A3 (fr) MOSFET à tranchée et sa méthode de fabrication
ATE453247T1 (de) Integrierte nitridbasierte akustikwellenbauelemente und verfahren zu deren herstellung
TW200635036A (en) Solid state imaging device and manufacturing method thereof
EP1204145A3 (fr) Elément semi-conducteur
TW200707693A (en) Embedded silicon-controlled rectifier (SCR) for HVPMOS ESD protection
EP0859402A3 (fr) Méthode de fabrication d'une électrode MOS
TW200620666A (en) Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same
TW200735380A (en) Edge termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
US6344385B1 (en) Dummy layer diode structures for ESD protection
EP1441393A3 (fr) Dispositif intégré à semi-conducteur et procédé pour sa fabrication
KR100734507B1 (ko) 고전압 소자의 전류 누설을 방지하기 위한 구조
JP6296535B2 (ja) ダイオードおよびそれを含む信号出力回路
WO2003073468A3 (fr) Transistor a jonction bipolaire de carbure de silicium avec zone de base de recouvrement
NO20063797L (no) Halvlederstruktur
WO2006050283A3 (fr) Dispositif resonant a effet tunnel et procede de fabrication d'un mos

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK RO

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK RO

17P Request for examination filed

Effective date: 20041028

AKX Designation fees paid

Designated state(s): DE GB IT

17Q First examination report despatched

Effective date: 20080205

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE GB IT

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 60341997

Country of ref document: DE

Effective date: 20121031

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20130606

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 60341997

Country of ref document: DE

Effective date: 20130606

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20220223

Year of fee payment: 20

Ref country code: DE

Payment date: 20220217

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IT

Payment date: 20220218

Year of fee payment: 20

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 60341997

Country of ref document: DE

REG Reference to a national code

Ref country code: GB

Ref legal event code: PE20

Expiry date: 20230219

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20230219